学術雑誌掲載論文
- S. Nomura, and T. Isobe, “Design Study on High Frequency Magnets for Magnetic Hyperthermia Applications”, IEEE Transactions on Applied Superconductivity, vol. 28, no. 3, pp. 1–7, April 2018. DOI:10.1109/TASC.2018.2800056
- Rene Barrera-Cardenas, Takanori Isobe, Marta Molinas, “A Meta-Parameterized Approach for the Evaluation of Semiconductor Technologies,” IEEJ Journal of Industry Applications, Vol. 7, No. 3, pp. 210–217, DOI:10.1541/ieejjia.7.210 (2018)
- 鴨志田 直樹, 飯嶋 竜司, 磯部 高範, 只野 博, “Superjunction-MOSFETを用いた準Zソースインバータの損失解析”, 電気学会論文誌Ｄ（産業応用部門誌）, Vol. 138. No. 5, pp. 463–470, DOI: 10.1541/ieejias.138.463 (2018).
- X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano, “Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors”, Jpn. J. Appl. Phys., vol. 57, no. 6S3, p. 06KA04, May 2018. DOI:10.7567/JJAP.57.06KA04
- Y. Karamoto, X. Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano, “Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors”, Jpn. J. Appl. Phys., vol. 57, no. 6S3, p. 06KA06, May 2018. DOI:10.7567/JJAP.57.06KA06
- T.Goto, T.Shirai, A.Tokuchi, T.Naito, K.Fukuda, and N.Iwamuro, “Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power,” Materials Science Forum, vol.924, pp.858-861, DOI:10.4028/www.scientific.net/MSF.924.858, (2018).
- M.Namai, J.An, H.Yano, and N.Iwamuro, “Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage,” Jpn. J. Appl. Phys., vol. 57, p. 074102, June 2018. DOI:10.7567/JJAP.57.074102
- 髙橋勇紀, 飯嶋竜司, 磯部高範, 只野博, 山崎長治, 長谷川智宏, “直列電圧補償回路の適用によるパルス電圧発生回路のコンデンサ静電容量低減”, 電気学会論文誌D（産業応用部門誌）, Vol. 138, No. 9, pp. 747–755, DOI:10.1541/ieejias.138.747 (2018)
- 大澤 順, 磯部高範, 只野博, “直列補償回路を用いた非接触給電用高周波インバータの高効率化の提案と実機検証”, 電気学会論文誌D（産業応用部門誌）, Vol. 138, No. 10, pp. 800–809, DOI:10.1541/ieejias.138.800 (2018)
- Yuki Takahashi, Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, Choji Yamazaki, Chihiro Hasegawa, “Capacitance reduction of pulse voltage generator by using series voltage compensator” Electrical Engineering in Japan, Issue 1, pp. 1–11 (2019) DOI:10.1002/eej.23189
学会・研究会発表（国際学会）
- J.An, M.Namai, H.Yano, N.Iwamuro, Y.Kobayashi, S.Harada, “Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs,” in Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD) 2018, pp.391-394, May, Chicago (USA).
- Ryuji Iijima, Naoki Kamosihda, Rene Alexander Barrera Cardenas, Takanori Isobe, Hiroshi Tadano,”Evaluation of Inductor Losses on Z-source Inverter Considering AC and DC Components” in International Power Electronics Conference, IPEC-Niigata 2018 -ECCE Asia-, May 20-24,2017, Niigata, Japan
- Yuki Takahashi, Takanori Isobe, Hiroshi Tadano,”Series Reactive Power Compensator with Reduced Capacitance for Hybrid Transformer” in International Power Electronics Conference, IPEC-Niigata 2018 -ECCE Asia-, May 20-24,2017, Niigata, Japan
- N.Iwamuro, “Recent Progress of SiC MOSFET Devices (Planary talk),” Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2018, July, Beijing (China), 2018.
- H. Nemoto, D. Okamoto, M. Sometani, Y. Kiuchi, T. Hatakeyama, S. Harada, N, Iwamuro, H. Yano ” Analysis of leakage current conduction mechanisms in thermally grown oxides on p-channel 4H-SiC MOSFETs ” in European Conference on Silicone Carbide and Related Materials (ECSCRM2018), September 2-6, Birmingham (UK).
- X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, H. Yano, “Mobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements”, European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2-6, 2018, Birmingham, UK
学会・研究会発表（国内）
一般雑誌掲載記事
- Noriyuki Iwamuro, “Low-cost SiC-MOSFETs poise for global adoption”, ASIA ELECTRONICS INDUSTRY, September, 2018, vol.23. pp.28-29.
- Noriyuki Iwamuro, “innovations Find Optimal Materials, Structure for Power Device,” ASIA ELECTRONICS INDUSTRY, November, 2018, vol.23, pp.40-41.
講演
- Noriyuki Iwamuro, “State-of-the-art and Future Prospective of Si-IGBT Technologies,” The 4th Int. Academic Forum of China IGBT Technology Innovation and Industry Alliance (2018.11.6, Zhuzhou, China)
書籍
- IEEJ Technical Report, “Recent progress of Si and WBG power semiconductor devices and ICs”, IEEJ Investigating R&D Committee on Si- and WBG-power semiconductor devices and ICs (Chairman: Noriyuki Iwamuro), No.1420, issued on Apr. 25th, 2018.
- Noriyuki Iwamuro, Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications, Edited by B. Jayant Baliga, Chapter 4: SiC power device design and fabrication, p.79-p.150, ELSEVIER, 2018.10.
