Dai Okamoto was born in Hiroshima, Japan, in 1983. He received the M.E. and Ph.D. degrees from the Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Nara, Japan, in 2008 and 2011, respectively. His doctoral research was focused on the characterization of SiC MOSFETs and development of new oxidation process for enhancing channel mobility of SiC MOSFETs.
He was a tenure-track Research Scientist with the National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan, from 2011 to 2015. Since 2015, he has been with University of Tsukuba, Ibaraki, Japan, where he is currently an Assistant Professor at the Faculty of Pure and Applied Sciences.
Dr. Okamoto is a member of the IEEE Electron Devices Society and the Japan Society of Applied Physics. He received the Best Paper Award at the IEEE IMFEDK in 2010.
- Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Yoshiyuki Yonezawa, and Hiroshi Yano, “Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation” IEEE Electron Device Lett., 35 (2014) 1176.
- Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, and Takashi Fuyuki, “Removal of Near-Interface Traps at SiO2/4H-SiC (0001) Interfaces by Phosphorus Incorporation” Appl. Phys. Lett., 96 (2010) 203508.
- Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, and Takashi Fuyuki, “Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si face Utilizing Phosphorus-Doped Gate Oxide” IEEE Electron Device Lett., 31 (2010) 710.
- Dai Okamoto, Hiroshi Yano, Yuki Oshiro, Tomoaki Hatayama, Yukiharu Uraoka, and Takashi Fuyuki, “Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures” Appl. Phys. Express, 2 (2009) 021201.
- Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, and Takashi Fuyuki, “Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs” IEEE Trans. Electron Devices, 55 (2008) 2013.