{"id":1423,"date":"2015-06-08T19:38:08","date_gmt":"2015-06-08T10:38:08","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=1423"},"modified":"2017-11-09T22:13:11","modified_gmt":"2017-11-09T13:13:11","slug":"2014%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=1423","title":{"rendered":"2014\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"

 <\/p>\n

\u00a0\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n
    \n
  1. D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano<\/span>,\u201cImproved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation\u201d, IEEE Electron Device Lett.,<\/em> Vol.35, No.12, pp.1176-1178 (2014).\n

    DOI: 10.1109\/LED.2014.2362768<\/li>\n

  2. T. Isobe<\/span>, K. Kato, N. Kojima, and R. Shimada, \u201cSoft-switching single-phase grid-connecting converter using DCM operation and a turn-off snubber capacitor,\u201d IEEE Transactions on Power Electronics<\/em>, vol. 29, iss. 6, pp. 2922-2930, 2014. DOI:10.1109\/TPEL.2013.2274390<\/a><\/li>\n
  3. T. Shoji<\/span>, S. Nishida, K. Hamada, and H. Tadano<\/span>, \u201cExperimental and simulation studies of neutron-induced single-event burnout in SiC power diodes,\u201d Japanese Journal of Applied Physics<\/em>, vol. 53, iss. 4S, p. 04EP03, 2014. DOI:10.7567\/JJAP.53.04EP03<\/a><\/li>\n<\/ol>\n

    \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings – International)<\/h3>\n
      \n
    1. D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano<\/span>, \u201cDemonstration of High Channel Mobility in 4H-SiC MOSFETs by Utilizing Boron-Doped Gate Oxide\u201d, 45th IEEE Semiconductor Interface Specialists Conference (SISC 2014),<\/em> San Diego (CA, USA), 6.2, 2014\/12\/11.<\/li>\n
    2. T. Isobe, \u201cA full-bridge AC power flow controller with reduced capacitance operated with both FFS (fundamental frequency switching) and PWM,\u201d in IEEE energy conversion congress and exposition (ECCE 2014)<\/em>, Pittsburgh, PA, United States, 14 – 18 September 2014. DOI:10.1109\/ECCE.2014.6953656<\/a><\/li>\n
    3. T. Shoji<\/span>, A. Soeno, H. Taguchi, S. Aoi, Y. Watanabe, and H. Tadano<\/span>, \u201cShort-circuit capability of SiC power MOSFETs,\u201d in SSDM2014<\/em>, Tsukuba, Ibaraki, Japan, 8 – 11 September 2014.<\/li>\n
    4. T. Shoji<\/span>, S. Nishida, K. Hamada, and H. Tadano<\/span>, \u201cCosmic ray induced single-event burnout in power devices,\u201d in 12th international seminar on power semiconductors (ISPS\u201914)<\/em>, Prague, Czech, 27 – 29 August 2014.<\/li>\n<\/ol>\n

      \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings – Domestic)<\/h3>\n
        \n
      1. \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u4e0a\u4e0b\u77ed\u7d61\u6642\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u30d1\u30bf\u30fc\u30f3\u306b\u95a2\u3059\u308b\u691c\u8a0e,\u201d \u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u4eac\u90fd\u5e02\u5927\u5b66\u4e16\u7530\u8c37\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e743\u670824\u65e5\uff5e26\u65e5<\/li>\n
      2. \u4eca\u6fa4\u5b5d\u5247, \u4e39\u7fbd\u7ae0\u96c5<\/span>, \u5165\u6c5f\u5c06\u55e3, \u5c71\u672c\u660c\u5f18, \u5ddd\u539f\u82f1\u6a39, \u6728\u6751\u53cb\u5247, \u7b39\u8c37\u5353\u4e5f, \u78ef\u90e8\u9ad8\u7bc4<\/span>, \u53ea\u91ce\u535a<\/span>, \u201cSiC-MOSFET\u306e\u96fb\u6d41\u30bb\u30f3\u30b9\u6a5f\u80fd\u3092\u7528\u3044\u305f\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u5236\u5fa1\u56de\u8def,\u201d \u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u4eac\u90fd\u5e02\u5927\u5b66\u4e16\u7530\u8c37\u30ad\u30e3\u30f3\u30d1\u30b9<\/span>, 2015\u5e743\u670824\u65e5\uff5e26\u65e5<\/li>\n
      3. \u5965\u7530\u4e00\u771f, \u78ef\u90e8\u9ad8\u7bc4, \u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78, \u53ea\u91ce\u535a, \u201c\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u5411\u3051\u7e26\u578bSiC-pMOSFET\u306e\u691c\u8a0e,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c206\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u540c\u5fd7\u793e\u5927\u5b66\u4eca\u51fa\u5ddd\u6821\u5730\u826f\u5fc3\u9928, 2014\u5e7412\u670820\u65e5<\/li>\n
      4. \u6c88\u51cc\u92d2, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cSiC MOSFET\u3092\u7528\u3044\u305f\u9ad8\u5468\u6ce2DC-DC\u30b3\u30f3\u30d0\u30fc\u30bf\u306e\u52b9\u7387\u3068\u30ce\u30a4\u30ba\u306e\u8a55\u4fa1,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c206\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u540c\u5fd7\u793e\u5927\u5b66\u4eca\u51fa\u5ddd\u6821\u5730\u826f\u5fc3\u9928, 2014\u5e7412\u670820\u65e5<\/li>\n
      5. \u5c71\u7530\u5eb8\u4ecb, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201c\u6c38\u4e45\u78c1\u77f3\u767a\u96fb\u6a5f\u306e\u305f\u3081\u306e\u76f4\u5217\u7121\u52b9\u96fb\u529b\u88dc\u511f\u56de\u8def\u306e\u691c\u8a0e,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c206\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u540c\u5fd7\u793e\u5927\u5b66\u4eca\u51fa\u5ddd\u6821\u5730\u826f\u5fc3\u9928, 2014\u5e7412\u670820\u65e5<\/li>\n
      6. \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308bSiC-MOSFET\u306e\u52d5\u4f5c\u306b\u95a2\u3059\u308b\u691c\u8a0e,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c206\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u540c\u5fd7\u793e\u5927\u5b66\u4eca\u51fa\u5ddd\u6821\u5730\u826f\u5fc3\u9928, 2014\u5e7412\u670820\u65e5<\/li>\n
      7. \u4e39\u7fbd\u7ae0\u96c5<\/span>, \u4eca\u6fa4\u5b5d\u5247, \u78ef\u90e8\u9ad8\u7bc4<\/span>,\u00a0\u53ea\u91ce\u535a<\/span>, \u201cSiC-MOSFET\u306e\u96fb\u6d41\u30bb\u30f3\u30b9\u6a5f\u80fd\u3092\u7528\u3044\u305f\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u5236\u5fa1\u56de\u8def\u306e\u63d0\u6848,\u201d \u96fb\u6c17\u5b66\u4f1a\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5bb6\u96fb\u6c11\u751f\u81ea\u52d5\u8eca\u5408\u540c\u7814\u7a76\u4f1a, 2014\u5e7412\u670818\u65e5\uff5e19\u65e5<\/li>\n
      8. \u53ea\u91ce \u535a, \u201cSi\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u4fe1\u983c\u6027, \u201d \u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c1\u56de\u7814\u7a76\u4f1a, \u6771\u4eac\u5de5\u696d\u5927\u5b66 \u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9, 2014\u5e747\u670830\u65e5<\/li>\n
      9. \u5ca9\u5ba4\u61b2\u5e78,”SiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u3068\u8ab2\u984c,” \u6a5f\u80fd\u6027\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u6750\u6599\u7814\u7a76\u4f1a\u7b2c1\u56de\u7814\u7a76\u4f1a\u3001\u56de\u8def\u4f1a\u9928\u30012015\u5e741\u670829\u65e5<\/li>\n
      10. \u5ca9\u5ba4\u61b2\u5e78,”\u30b7\u30ea\u30b3\u30f3IGBT\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411,” \u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u3000\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a, 2015\u5e743\u67085\u65e5<\/li>\n
      11. \u5ca9\u5ba4\u61b2\u5e78,”\u6700\u65b0\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u958b\u767a\u52d5\u5411,” \u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a\u6625\u5b63\u8b1b\u6f14\u5927\u4f1a, 2015\u5e743\u670818\u65e5<\/li>\n<\/ol>\n

        \u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b (Magazines)<\/h3>\n

        \u8b1b\u6f14 (Invited Lecture)<\/h3>\n

        1\uff0e\u5ca9\u5ba4\u61b2\u5e78 “SiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6\u3068\u305d\u306e\u53ef\u80fd\u6027,” \u65e5\u672c\u5b66\u8853\u632f\u8208\u4f1a\u771f\u7a7a\u30ca\u30ce\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u7b2c158\u59d4\u54e1\u4f1a\u3000\u7b2c102\u7814\u7a76\u4f1a, 2014\u5e744\u670824\u65e5<\/p>\n","protected":false},"excerpt":{"rendered":"  \u00a0\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano,\u201cImproved …","protected":false},"author":34,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1423"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/34"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1423"}],"version-history":[{"count":22,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1423\/revisions"}],"predecessor-version":[{"id":3720,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1423\/revisions\/3720"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1423"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}