{"id":151,"date":"2014-07-02T15:35:13","date_gmt":"2014-07-02T06:35:13","guid":{"rendered":"http:\/\/tuhp.primecool.com\/?page_id=151"},"modified":"2021-03-24T19:05:24","modified_gmt":"2021-03-24T10:05:24","slug":"%e5%b2%a9%e5%ae%a4-%e6%86%b2%e5%b9%b8","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=151","title":{"rendered":"\u5ca9\u5ba4 \u61b2\u5e78"},"content":{"rendered":"<p>&nbsp;<\/p>\n<h2>\u5ca9\u5ba4 \u61b2\u5e78 \uff08\u3044\u308f\u3080\u308d\u3000\u306e\u308a\u3086\u304d\uff09<\/h2>\n<p><img loading=\"lazy\" class=\"alignright wp-image-747\" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/09\/4b11f5bb4228e051afbd38a211077d31-e1409904778942-300x254.jpg\" alt=\"\u5ca9\u5ba4\u5199\u771f\" width=\"249\" height=\"212\" srcset=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/09\/4b11f5bb4228e051afbd38a211077d31-e1409904778942-300x254.jpg 300w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/09\/4b11f5bb4228e051afbd38a211077d31-e1409904778942-1024x869.jpg 1024w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/09\/4b11f5bb4228e051afbd38a211077d31-e1409904778942.jpg 1681w\" sizes=\"(max-width: 249px) 100vw, 249px\" \/><strong>\u5c45\u5ba4: <\/strong>\u5171\u540c\u7814\u7a76\u68dfD\uff08\u65e7VBL\u68df\uff09401-1<\/p>\n<p><strong>E-mail:<\/strong> iwamuro.noriyuki.fb@u<\/p>\n<p><strong>TEL: <\/strong>029-853-5446<\/p>\n<p><strong>\u5c02\u9580\u5206\u91ce\uff1a<\/strong>\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9<\/p>\n<p><strong>\u6240\u5c5e\uff1a<\/strong><span style=\"color: #494949;\">\u6570\u7406\u7269\u8cea\u7cfb<\/span><span style=\"color: #494949;\"> \u6559\u6388\uff08\u7269\u7406\u5de5\u5b66\u57df\uff09<\/span><\/p>\n<p><strong>\u5b66\u4f4d\uff1a<\/strong>\u535a\u58eb\uff08\u5de5\u5b66\uff09<\/p>\n<h3 class=\"field-label\" style=\"color: #494949;\">\u7d4c\u6b74<\/h3>\n<div style=\"color: #494949;\">\n<div class=\"field field-type-text field-lecturer-career\">\n<div class=\"field-items\">\n<div class=\"field-item\">\n<ul>\n<li>\u6771\u4eac\u90fd\u677f\u6a4b\u533a\u751f\u307e\u308c<\/li>\n<li>1984\u5e74\u65e9\u7a32\u7530\u5927\u5b66\u7406\u5de5\u5b66\u90e8\u96fb\u6c17\u5de5\u5b66\u79d1\u5352\u696d\u3001\u5bcc\u58eb\u96fb\u6a5f\u682a\u5f0f\u4f1a\u793e\u5165\u793e<\/li>\n<li>1988\u5e74\u304b\u3089\u73fe\u5728\u307e\u3067\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30b7\u30df\u30e5\u30ec\u30fc\u30b7\u30e7\u30f3\u6280\u8853\u3001Si-IGBT\u30fbDiode\u306a\u3089\u3073\u306bSiC\u30c7\u30d0\u30a4\u30b9\u7814\u7a76\u30fb\u88fd\u54c1\u5316\u958b\u767a\u306b\u5f93\u4e8b<\/li>\n<li>1992-1993\u5e74\u3000\u7c73\u56fdNorth Carolina State Univ. Visiting Scholar.\u00a0<span class=\"caps\">MOS<\/span>-gate thyristor\u306e\u7814\u7a76\u306b\u5f93\u4e8b<\/li>\n<li>1998\u5e74 \u535a\u58eb\uff08\u5de5\u5b66\uff09\uff08\u65e9\u7a32\u7530\u5927\u5b66\uff09<\/li>\n<li>2009-2013\u5e74 (\u72ec)\u7523\u696d\u6280\u8853\u7dcf\u5408\u7814\u7a76\u6240 \u5148\u9032\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u7814\u7a76\u30bb\u30f3\u30bf\u30fc\u3001SiC-MOSFET,SBD\u306e\u91cf\u7523\u6280\u8853\u958b\u767a\u306b\u5f93\u4e8b<\/li>\n<li>2013\u5e74-\u3000\u7b51\u6ce2\u5927\u5b66 \u6570\u7406\u7269\u8cea\u7cfb \u7269\u7406\u5de5\u5b66\u57df \u6559\u6388<\/li>\n<li>2017.4-2019.3, 2020.4-\u3000\u7b51\u6ce2\u5927\u5b66 \u5fdc\u7528\u7406\u5de5\u5b66\u985e\u3000\u96fb\u5b50\u30fb\u91cf\u5b50\u5de5\u5b66\u5c02\u653b\u3000\u5c02\u653b\u4e3b\u4efb<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/div>\n<div class=\"field field-type-text field-lecturer-affiliation\">\n<h3 class=\"field-label\">\u5b66\u5354\u4f1a<\/h3>\n<div class=\"field-items\">\n<div class=\"field-item\">\n<ul>\n<li><span class=\"caps\">IEEE<\/span>\u00a0Senior Member<\/li>\n<li>\u96fb\u6c17\u5b66\u4f1a\u4e0a\u7d1a\u4f1a\u54e1\u3001\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u4f1a\u54e1<\/li>\n<li>IEEE EDS Power Devices Technical Committee<\/li>\n<li><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #494949; font-family: Georgia,'Times New Roman','Bitstream Charter',Times,serif; font-size: 13px; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u56fd\u969b\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0 (<\/span><span class=\"caps\">ISPSD<\/span><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #494949; font-family: Georgia,'Times New Roman','Bitstream Charter',Times,serif; font-size: 13px; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">) 2021 \u7d44\u7e54\u59d4\u54e1\u4f1a\u59d4\u54e1<\/span><\/li>\n<li>\u30b7\u30ea\u30b3\u30f3\u30ab\u30fc\u30d0\u30a4\u30c9\u304a\u3088\u3073\u95a2\u9023\u6750\u6599\u306b\u95a2\u3059\u308b\u56fd\u969b\u4f1a\u8b702019\uff08ICSCRM2019\uff09\u8ad6\u6587\u59d4\u54e1\u4f1a\u59d4\u54e1<\/li>\n<li>\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u56fd\u969b\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0 (<span class=\"caps\">ISPSD<\/span>) Technical Program Committee Member, 2010 Vice Program Chair<\/li>\n<li>\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u56fd\u969b\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0 (<span class=\"caps\">ISPSD<\/span>) 2017 Steering Committee Member<\/li>\n<li>Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM)\u00a02018, Conference Chair<\/li>\n<li>\u7b51\u6ce2\u5927\u5b66\u30de\u30b8\u30b7\u30e3\u30f3\u30ba\u30af\u30e9\u30d6\u3000\u9867\u554f<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<h3 class=\"field-label\" style=\"color: #494949;\">\u8457\u66f8<\/h3>\n<div class=\"field field-type-text field-lecturer-book\" style=\"color: #494949;\">\n<ul>\n<li>\u8eca\u8f09\u6a5f\u5668\u306b\u304a\u3051\u308b\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u8a2d\u8a08\u3068\u5b9f\u88c5\uff0c\u79d1\u5b66\u6280\u8853\u51fa\u7248\u682a\u5f0f\u4f1a\u793e, 2019\u5e749\u6708<\/li>\n<\/ul>\n<\/div>\n<p><img loading=\"lazy\" id=\"imgBlkFront\" class=\"a-dynamic-image image-stretch-vertical frontImage a-stretch-vertical\" style=\"color: #111111;\" src=\"https:\/\/images-na.ssl-images-amazon.com\/images\/I\/51eu92KIzmL._SX340_BO1,204,203,200_.jpg\" alt=\"\" width=\"113\" height=\"165\" data-a-dynamic-image=\"{&quot;https:\/\/images-na.ssl-images-amazon.com\/images\/I\/51eu92KIzmL._SY344_BO1,204,203,200_.jpg&quot;:[237,346],&quot;https:\/\/images-na.ssl-images-amazon.com\/images\/I\/51eu92KIzmL._SX340_BO1,204,203,200_.jpg&quot;:[342,499]}\" \/><\/p>\n<ul>\n<li>Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications, Edited by B. Jayant Baliga, Chapter 4: SiC power device design and fabrication, p.79-p.150, ELSEVIER,\u00a02018.10.<\/li>\n<\/ul>\n<p><a href=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/20375ced40379f1e8ea26f8e6c287f04.jpg\"><img loading=\"lazy\" class=\"alignnone  wp-image-4478\" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/20375ced40379f1e8ea26f8e6c287f04-197x300.jpg\" alt=\"\u8868\u7d19\" width=\"107\" height=\"163\" srcset=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/20375ced40379f1e8ea26f8e6c287f04-197x300.jpg 197w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/20375ced40379f1e8ea26f8e6c287f04.jpg 198w\" sizes=\"(max-width: 107px) 100vw, 107px\" \/><\/a><\/p>\n<ul>\n<li>SiC\/GaN\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u666e\u53ca\u306e\u30dd\u30a4\u30f3\u30c8\uff08\u76e3\u4fee\uff09\uff08S&amp;T\u51fa\u7248\uff09\uff082018\u5e741\u6708\u767a\u520a\uff09<\/li>\n<\/ul>\n<p><a href=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/12031054_5a23594a58874.jpg\"><img loading=\"lazy\" class=\"alignnone wp-image-4065\" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/12031054_5a23594a58874.jpg\" alt=\"12031054_5a23594a58874\" width=\"120\" height=\"165\" \/><\/a><\/p>\n<ul>\n<li>\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u9ad8\u6027\u80fd\u5316\u3068\u305d\u306e\u7523\u696d\u5c55\u958b\uff08\u76e3\u4fee\uff09\uff08\u30b7\u30fc\u30a8\u30e0\u30b7\u30fc\u51fa\u7248\uff09\uff082015\u5e746\u6708\u767a\u520a\uff09<\/li>\n<\/ul>\n<p><img loading=\"lazy\" class=\"alignnone wp-image-1662\" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2015\/06\/92338060b78ccab5f718844488d76673-211x300.jpg\" alt=\"\u30b7\u30fc\u30a8\u30e0\u30b7\u30fc\u51fa\u7248\" width=\"120\" height=\"170\" srcset=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2015\/06\/92338060b78ccab5f718844488d76673-211x300.jpg 211w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2015\/06\/92338060b78ccab5f718844488d76673.jpg 538w\" sizes=\"(max-width: 120px) 100vw, 120px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<div class=\"field-item\">\n<ul>\n<li><a style=\"color: #027ac6;\" href=\"http:\/\/www.amazon.co.jp\/gp\/product\/4886862713?tag=tech-seminar-jp-22&amp;creativeASIN=4886862713&amp;linkCode=as2&amp;camp=247&amp;creative=1211\">\u4e16\u754c\u3092\u52d5\u304b\u3059\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u2015IGBT\u304c\u306a\u3051\u308c\u3070\u96fb\u8eca\u3082\u81ea\u52d5\u8eca\u3082\u52d5\u304b\u306a\u3044<\/a> (\u7de8\u96c6\u59d4\u54e1)\uff08\u96fb\u6c17\u5b66\u4f1a\uff09\uff082008\u5e7412\u6708\u767a\u520a\uff09<\/li>\n<\/ul>\n<\/div>\n<p class=\"field-items\"><a style=\"color: #027ac6;\" href=\"http:\/\/www.amazon.co.jp\/gp\/product\/4886862713?tag=tech-seminar-jp-22&amp;creativeASIN=4886862713&amp;linkCode=as2&amp;camp=247&amp;creative=1211\"><img title=\"\u4e16\u754c\u3092\u52d5\u304b\u3059\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u2015IGBT\u304c\u306a\u3051\u308c\u3070\u96fb\u8eca\u3082\u81ea\u52d5\u8eca\u3082\u52d5\u304b\u306a\u3044\" src=\"http:\/\/ec5.images-amazon.com\/images\/I\/51vLB9lbg4L._SL160_.jpg\" alt=\"\u4e16\u754c\u3092\u52d5\u304b\u3059\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u2015IGBT\u304c\u306a\u3051\u308c\u3070\u96fb\u8eca\u3082\u81ea\u52d5\u8eca\u3082\u52d5\u304b\u306a\u3044\" \/><\/a> <img src=\"http:\/\/www.assoc-amazon.jp\/e\/ir?t=tech-seminar-jp-22&amp;l=as2&amp;o=9&amp;a=4886862713\" alt=\"\" \/><\/p>\n<div class=\"field-items\">\n<ul>\n<li>SiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u958b\u767a\u3068\u6700\u65b0\u52d5\u5411\uff08\u76e3\u4fee\uff09\uff08S&amp;T\u51fa\u7248\uff09\uff082012\u5e7412\u6708\u767a\u520a\uff09<\/li>\n<\/ul>\n<\/div>\n<p><img loading=\"lazy\" class=\"alignnone wp-image-769 \" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/10291846_508e508dc1bcf-2.jpg\" alt=\"\" width=\"116\" height=\"168\" \/><\/p>\n<ul>\n<li>\u96fb\u6c17\u5b66\u4f1a\u6280\u8853\u5831\u544a\u3000&#8221;\u30b7\u30ea\u30b3\u30f3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30fb\u30d1\u30ef\u30fcIC\u306e\u66f4\u306a\u308b\u9032\u5316\u304a\u3088\u3073\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u9032\u5c55&#8221;\uff0c\u96fb\u6c17\u5b66\u4f1a\uff7c\uff98\uff7a\uff9d\u306a\u3089\u3073\u306b\u65b0\u6750\u6599\uff8a\uff9f\uff9c\uff70\uff83\uff9e\uff8a\uff9e\uff72\uff7d\u30fb\uff8a\uff9f\uff9c\uff70IC\u6280\u8853\u8abf\u67fb\u5c02\u9580\u59d4\u54e1\u4f1a\uff08\u59d4\u54e1\u9577\uff1a\u5ca9\u5ba4\u61b2\u5e78\uff09\uff0c\u7b2c1420\u53f7, 2018\u5e744\u670825\u65e5\u767a\u884c<\/li>\n<\/ul>\n<p><a href=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/IEEJ_Book.jpg\"><img loading=\"lazy\" class=\"alignnone wp-image-4246 \" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/IEEJ_Book-e1527070043951-225x300.jpg\" alt=\"IEEJ_Book\" width=\"117\" height=\"156\" srcset=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/IEEJ_Book-e1527070043951-225x300.jpg 225w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/IEEJ_Book-e1527070043951-768x1024.jpg 768w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/IEEJ_Book-e1527070043951.jpg 1224w\" sizes=\"(max-width: 117px) 100vw, 117px\" \/><\/a><\/p>\n<h3 class=\"field field-type-text\" style=\"color: #494949;\">\u00a0\u53d7\u8cde\u6b74<\/h3>\n<ul>\n<li>\u65e5\u7d4c\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u3000\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u30a2\u30ef\u30fc\u30c92020\u3000\u6700\u512a\u79c0\u8cde\u3000\uff082020\u5e7412\u6708\uff09<\/li>\n<li>\u96fb\u6c17\u5b66\u4f1a\u3000\u7b2c23\u56de\u512a\u79c0\u6d3b\u52d5\u8cde\u3000\u6280\u8853\u5831\u544a\u8cde\uff082020\u5e744\u6708\uff09<\/li>\n<li>\n<div class=\"field field-type-text\" style=\"color: #494949;\">\u96fb\u6c17\u5b66\u4f1a\u3000\u512a\u79c0\u6280\u8853\u6d3b\u52d5\u8cde \u30b0\u30eb\u30fc\u30d7\u8457\u4f5c\u8cde\uff08\uff12\uff10\uff11\uff11\u5e74\uff09<\/div>\n<\/li>\n<\/ul>\n<h3 class=\"field field-type-text\" style=\"color: #494949;\"><strong>\u8ad6\u6587\u3001\u5b66\u4f1a\u767a\u8868\u7b49<\/strong><\/h3>\n<h5 class=\"field field-type-text\" style=\"color: #494949;\">2020\u5e74<\/h5>\n<ul>\n<li><span style=\"text-decoration: underline;\">H. Shimizu<\/span><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, N. Watanabe, T. Morikawa, A. Shima, and <\/span><span style=\"text-decoration: underline;\">N. Iwamuro<\/span><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, \u201c1.2 kV SiC SBD-embedded MOSFET\u00a0with extension structure and titanium-based single contact,\u201d <\/span><em style=\"font-style: italic;\">Japanese Journal of Applied Physics<\/em><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, <\/span><a style=\"color: #8224e3;\" href=\"https:\/\/doi.org\/10.7567\/1347-4065\/ab65a5\">DOI: 10.7567\/1347-4065\/ab65a5<\/a><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">.<\/span><\/li>\n<li><span style=\"text-decoration: underline;\">H. Nemoto<span style=\"float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3', 'Hiragino Kaku Gothic Pro', \u30e1\u30a4\u30ea\u30aa, Meiryo, Osaka, '\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af', 'MS PGothic', sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style: outside none decimal; orphans: 2; text-align: left; text-decoration: underline; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px; display: inline !important;\">, <\/span>D. Okamoto<span style=\"float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3', 'Hiragino Kaku Gothic Pro', \u30e1\u30a4\u30ea\u30aa, Meiryo, Osaka, '\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af', 'MS PGothic', sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style: outside none decimal; orphans: 2; text-align: left; text-decoration: underline; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px; display: inline !important;\">, <\/span>X. Zhang<\/span><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada,<\/span><span style=\"text-decoration: underline;\"> N. Iwamuro<\/span><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, and<\/span> <span style=\"text-decoration: underline;\">H. Yano<\/span><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\"><span style=\"text-decoration: underline;\">,<\/span> \u201cConduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs,\u201d <\/span><em style=\"font-style: italic;\">Japanese Journal of Applied Physics<\/em><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, <\/span><a style=\"color: #8224e3;\" href=\"https:\/\/doi.org\/10.35848\/1347-4065\/ab7ddb\">DOI: 10.35848\/1347-4065\/ab7ddb<\/a><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">, Mar. 2020.<\/span><\/li>\n<li>K. Yao, H. Yano, H. Tadano, and N. Iwamuro, &#8220;Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses,&#8221;\u00a0<em>IEEE Transactions on Electron Devices<\/em>, vol. 67, no. 10, pp. 4328-4334, Oct., 2020,\u00a0<a href=\"https:\/\/doi.org\/10.1109\/TED.2020.3013192\" target=\"_blank\">DOI: 10.1109\/TED.2020.3013192<\/a>.<\/li>\n<li><span style=\"text-decoration: underline;\">A. Matsushima<\/span>, Y. Mori, A. Shima, and\u00a0<span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, &#8220;Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes,&#8221;<em>\u00a0Japanese Journal of Applied Physics<\/em>, vol. 59, pp. 104003 1-8, 2020, DOI:10.35848\/1347-4065\/abb719.<\/li>\n<li>Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani,\u00a0<span style=\"text-decoration: underline;\">Dai Okamoto<\/span>,<span style=\"text-decoration: underline;\">\u00a0Hiroshi Yano,<\/span>\u00a0<span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span>, Takao Inokuma, Norio Tokuda, &#8220;Energy distribution of Al2O3\/diamond interface states characterized by high temperature capacitance-voltage method,&#8221;\u00a0<em>Carbon<\/em>, vol. 168, pp.659-664, 2020, DOI:10.1016\/j.carbon.2020.07.019.<\/li>\n<li><span style=\"text-decoration: underline;\">Ruito Aiba<\/span>,\u00a0<span style=\"text-decoration: underline;\">Kevin Matsu<\/span>i, Masakazu Baba, Shinsuke Harada,\u00a0<span style=\"text-decoration: underline;\">Hiroshi Yano<\/span>, and\u00a0<span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span>, &#8220;Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET with Higher Schottky Barrier Height Metal,&#8221;\u00a0<em>IEEE Electron Device Letters<\/em>, vol.41, issue 12, pp. 1810-1813, 2020, doi: 10.1109\/LED.2020.3031598.<\/li>\n<li><span style=\"text-decoration: underline;\">M. Okawa<\/span>,\u00a0<span style=\"text-decoration: underline;\">T. Kanamori<\/span>,\u00a0<span style=\"text-decoration: underline;\">R. Aiba<\/span>, S. Harada,\u00a0<span style=\"text-decoration: underline;\">H. Yano<\/span>, and\u00a0<span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, &#8220;Analysis of 1.2 kV SiC SWITCH-MOS after Short-circuit Stress,&#8221; in\u00a0<em>Proc. of Int. Symp. Power Semiconductors and ICs,\u00a0<\/em>pp. 74-77, 2020.<\/li>\n<li><span style=\"text-decoration: underline;\">R. Aiba,<\/span>\u00a0<span style=\"text-decoration: underline;\">K. Matsui<\/span>,\u00a0<span style=\"text-decoration: underline;\">M. Okawa<\/span>,\u00a0<span style=\"text-decoration: underline;\">T. Kanamori<\/span>, S. Harada,\u00a0<span style=\"text-decoration: underline;\">H. Yano<\/span>, and\u00a0<span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, &#8220;Investigation of dVDS\/dt Controllability on Rg in SWITCH-MOS to Achieve Superior Turn-on Characteristics with Low dVDS\/dt,&#8221; in\u00a0<em>Proc. of Int. Symp. Power Semiconductors and ICs,\u00a0<\/em>pp. 174-177, 2020.<\/li>\n<li>X. Cui, N. Iwamuro, and H. Yano, &#8220;Influence of Interface Traps on the Shape of Split C-V Curves of 4HSiC MOSFETs at Inversion,&#8221; in\u00a0<em>Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials<\/em>, pp. 241-242, 2020.<\/li>\n<li><span style=\"text-decoration: underline;\">T. Kanamori<\/span>,\u00a0<span style=\"text-decoration: underline;\">R. Aiba<\/span>, S. Harada,\u00a0<span style=\"text-decoration: underline;\">H. Yano<\/span>, and\u00a0<span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, &#8220;Experimental Demonstration of\u00a0\u00a0Superior Vf -Err Characteristics of pin Body Diode in 1.2 kV IE-UMOSFET with a Very Short Channel Length,&#8221; in\u00a0<em>Proceedings of PCIM Asia,<\/em>\u00a0 pp. 25-29, 2020.<\/li>\n<li>Noriyuki Iwamuro,\u00a0 &#8220;Recent progress of power semiconductor devices and expectation for GaN power devices (Invited),&#8221; 39th Electronic Materials Symposium, 2020\u5e7410\u67087~9\u65e5.<\/li>\n<li><span style=\"text-decoration: underline;\">\u5742\u7530\u5927\u8f1d\uff0c\u5ca1\u672c\u5927<\/span>\uff0c\u67d3\u8c37\u6e80\uff0c\u5e73\u4e95\u60a0\u4e45\uff0c\u5ca1\u672c\u5149\u592e\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u7560\u5c71\u54f2\u592b\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78<\/span>,\u300c\u6539\u826f\u9ad8\u901fOn-the-fly\u6cd5\u306b\u3088\u308bSiC MOSFET\u306e\u6b63\u78ba\u306aNBTI\u8a55\u4fa1\u300d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c7\u56de\u8b1b\u6f14\u4f1a\uff0c 2020\u5e7412\u67089\u65e5\uff5e12\u670810\u65e5<\/li>\n<li><span style=\"text-decoration: underline;\">\u677e\u4e95\u30b1\u30d3\u30f3, \u9957\u5834\u5841\u58eb, \u67cf\u4f73\u4ecb<\/span>, \u99ac\u5834\u6b63\u548c, \u539f\u7530\u4fe1\u4ecb, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78<\/span>, \u300c\u9ad8\u30b7\u30e7\u30c3\u30c8\u30ad\u30fc\u969c\u58c1\u91d1\u5c5e\u3092\u9069\u7528\u3057\u305f1.2 kV SBD\u5185\u8535SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027\u8a55\u4fa1\u300d, \u4ee4\u548c3\u5e74\u5ea6\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, 2021\u5e743\u67089\u65e5~11\u65e5<\/li>\n<li><span style=\"text-decoration: underline;\">\u5317\u6751\u96c4\u5927\uff0c\u4e80\u548c\u7530\u4eae<\/span>\uff0c\u5150\u5cf6\u4e00\u8061\uff0c<span style=\"text-decoration: underline;\">\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8<\/span>\uff0c\u300c4H-SiC\u30b7\u30e7\u30c3\u30c8\u30ad\u30fcpn\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9ad8\u8010\u5727\u5316\u300d\uff0c\u7b2c68\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c2021\u5e743\u670816~19\u65e5<\/li>\n<\/ul>\n<h5 class=\"field field-type-text\" style=\"color: #494949;\">2019\u5e74<\/h5>\n<ul>\n<li>N. Iwamuro,&#8221;Recent Progress of SiC-MOSFETs and Their Futyres(Invited),&#8221; in <em>Proc. Inter. Conf. on Electronic Packageing 2019<\/em>, Apr. 2019, FA2-3, pp.260-264.<\/li>\n<li>\u5927\u5ddd\u96c5\u8cb4\uff0c\u98ef\u5d8b\u7adc\u53f8\uff0c\u5ca1\u672c\u5927\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018SiC MOSFET\u306e\u8ca0\u8377\u77ed\u7d61\u8a66\u9a13\u306b\u304a\u3051\u308b\u30b2\u30fc\u30c8\u6f0f\u308c\u96fb\u6d41\u3068\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u306e\u8a55\u4fa1\u89e3\u6790\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li><span style=\"text-decoration: underline;\">\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4\uff0c\u91d1\u68ee\u5927\u6cb3<\/span>\uff0c\u5c0f\u6797\u52c7\u4ecb\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78<\/span>\uff0c\u2018\u2018SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u30bf\u30fc\u30f3\u30aa\u30f3\u7279\u6027\u306e\u6e29\u5ea6\u4f9d\u5b58\u6027\u8a55\u4fa1\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li><span style=\"text-decoration: underline;\">\u91d1\u68ee\u5927\u6cb3\uff0c\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4<\/span>\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78<\/span>\uff0c\u2018\u2018SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u306e\u5185\u8535\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u7279\u6027\u89e3\u6790\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u59da\u51f1\u502b\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018Investigation of Unclamped Inductive Switching Capability of Silicon Carbide MOSFETs\u201d\uff0c\u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li><span style=\"text-decoration: underline;\">Masataka Okawa<\/span>, <span style=\"text-decoration: underline;\">Ruito Aiba, Taiga Kanamori,<\/span> Yusuke Kobayashi, Shinsuke Harada, <span style=\"text-decoration: underline;\">Hiroshi\u00a0Yano,<\/span> and <span style=\"text-decoration: underline;\">Noriyuki Iwamuro,<\/span><a> &#8220;<\/a>First Demonstration of SHort-Circuit capability for a 1.2 kV SiC SWITCH-MOS,&#8221; <em>IEEE Journal of Electron Devices Society,<em>\u00a0<\/em><\/em>vol.7, pp.613-620, 2019, DOI:10.1109\/JEDS.2019.2917563<em>.<\/em><\/li>\n<li>Noriyuki Iwamuro, &#8220;Recent Progress of SiC MOSFET Devices,&#8221; <em>Material Science Forum<\/em>, vol. 954, pp.90-98, 2019.<\/li>\n<li>N. Iwamuro,\u201dRecent Progress of SiC-MOSFETs and Competition with state-of-the-art Si-IGBTs (Keynote Speech),&#8221;\u00a0<em>WiPDA-Asia 2019<\/em>, Taipei, May. 2019.<\/li>\n<li>Kailun Yao, Hiroshi Yano, and Noriyuki Iwamuro \u201dInvestigation of UIS Capability for -600V Class Vertical SiC p-channel MOSFET,&#8221; in <em>Proceedings of International Symposium on Power Semiconductor Devices &amp; ICs (IEEE ISPSD)<\/em> 2019, pp. 187-190, May, Shanghai (China).<\/li>\n<li><span style=\"text-decoration: underline;\">Ruito Aiba, Masataka Okawa, Taiga Kanamori<\/span>, Yusuke Kobayashi, Shinsuke Harada,<span style=\"text-decoration: underline;\"> Hiroshi Yano, and Noriyuki Iwamuro<\/span> \u201dExperimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS,&#8221; in\u00a0<em>Proceedings of International Symposium on Power Semiconductor Devices &amp; ICs (IEEE ISPSD)<\/em>\u00a02019, pp. 23-26, May, Shanghai (China).<\/li>\n<li><span style=\"text-decoration: underline;\">Masataka Okawa, Ruito Aiba Taiga Kanamori,<\/span> Shinsuke Harada, <span style=\"text-decoration: underline;\">Hiroshi Yano, and Noriyuki Iwamuro<\/span> \u201dExperimental and Numerical Investigations of Short-Circuit Failure Mechanisms for State-of-the-Art 1.2kV SiC Trench MOSFETs,&#8221; in\u00a0<em>Proceedings of International Symposium on Power Semiconductor Devices &amp; ICs (IEEE ISPSD)<\/em>\u00a02019, pp. 167-170, May, Shanghai (China).<\/li>\n<li><span style=\"text-decoration: underline;\">D. Okamoto, H. Nemoto, X. Zhang<\/span>,<span style=\"text-decoration: underline;\"> X. Zhou<\/span>, M. Somenati, M. Okamoto, S. Harada, T. Hatakeyama,<span style=\"text-decoration: underline;\"> N. Iwamuro, and H, Yano,<\/span> \u201cThreshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method\u201d,\u00a0<span style=\"color: #3a3a3a;\">International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n<li><span style=\"text-decoration: underline;\">T. Kanamori, R. Aiba, M. Okawa,<\/span> S. Harada, <span style=\"text-decoration: underline;\">H. Yano,<\/span> and <span style=\"text-decoration: underline;\">N. Iwamuro,<\/span> \u201cSuperior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length\u201d, International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.<\/li>\n<li><span style=\"text-decoration: underline;\">X. Zhang, D. Okamoto<\/span>, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, \u201cDifferent Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides\u201d, Oral,\u00a0<span style=\"color: #3a3a3a;\">International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n<li><span style=\"text-decoration: underline;\">X. Zhou, D. Okamoto, X. Zhang<\/span>, M. Sometani. M. Okamoto, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro, H. Yano<\/span>, \u201cAccurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs\u201d, \u00a0<span style=\"color: #3a3a3a;\">International Conference on Silicon Carbide and Related Materials 2019, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n<li>Y. Matsuya, X. Zhang, D. Okamoto,\u00a0 N. Iwamuro, H. Yano,\u00a0\u201cAnalysis of three-level charge pumping characteristics of4H-SiC MOSFETs considering near-interface traps\u201d,\u00a0\u00a0<span style=\"color: #3a3a3a;\">International Conference on Silicon Carbide and Related Materials 2019, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n<li>H. Nemoto, X. Zhang, D. Okamoto, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada, N. Iwamuro, H. Yano, \u201d Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias\u201d,International Conference on Silicon Carbide and Related Materials 2019, Sep.29-Oct.4, Kyoto, Japan.<\/li>\n<li><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">K. Takashima, R. Iijima, T. Mannen, T. Isobe, H. Tadano and N. Iwamuro, \u201cDesign Strategy of Z-source Inverter for Utilization of Power Semiconductors with Extremely Low Short-circuit Capability,\u201d\u00a0<\/span><em style=\"font-style: italic;\">in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019),<\/em><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\"> 14-17 October 2019,<\/span><em style=\"font-style: italic;\">\u00a0<\/em><span style=\"display: inline !important; float: none; background-color: #ffffff; color: #333333; font-family: '\u30d2\u30e9\u30ae\u30ce\u89d2\u30b4 Pro W3','Hiragino Kaku Gothic Pro','\u30e1\u30a4\u30ea\u30aa',Meiryo,Osaka,'\uff2d\uff33 \uff30\u30b4\u30b7\u30c3\u30af','MS PGothic',sans-serif; font-size: 100%; font-style: normal; font-variant: normal; font-weight: 400; letter-spacing: normal; list-style-image: none; list-style-position: outside; list-style-type: decimal; orphans: 2; text-align: left; text-decoration: none; text-indent: 0px; text-transform: none; -webkit-text-stroke-width: 0px; white-space: normal; word-spacing: 0px;\">Lisbon, Portugal. <\/span><a style=\"color: #8224e3;\" href=\"https:\/\/doi.org\/10.1109\/IECON.2019.8927352\">DOI: 10.1109\/IECON.2019.8927352<\/a><\/li>\n<\/ul>\n<h5 class=\"field field-type-text\" style=\"color: #494949;\">2018\u5e74<\/h5>\n<ul>\n<li>J.An, M.Namai, D.Okamoto, H.Yano, H.Tadano, and N.Iwamuro, &#8220;Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test,&#8221; Electronics and Communications in Japan, vol.101, no.1, pp.24-31, 2018, DOI: 10.1002\/ecj.12018.<\/li>\n<li><span style=\"text-decoration: underline;\">J.An<\/span>,\u00a0 <span style=\"text-decoration: underline;\">M.Namai<\/span>, <span style=\"text-decoration: underline;\">H.Yano<\/span>, <span style=\"text-decoration: underline;\">N.Iwamuro<\/span>, Y.Kobayashi, S.Harada, &#8220;Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs,&#8221; <em>in Proceedings of\u00a0International Symposium on Power Semiconductor Devices &amp; ICs (IEEE ISPSD) 2018<\/em>, pp.391-394, May, Chicago (USA).<\/li>\n<li><span style=\"text-decoration: underline;\">X. Zhang<\/span>, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, T. Hatakeyama, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, &#8220;Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors&#8221;, <em>Jpn. J. Appl. Phys.,<\/em> vol. 57, no. 6S3, p. 06KA04, May 2018. <a href=\"https:\/\/doi.org\/10.7567\/JJAP.57.06KA04\">DOI:10.7567\/JJAP.57.06KA04<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">Y. Karamoto<\/span>, <span style=\"text-decoration: underline;\">X. Zhang<\/span>, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, M. Sometani, T. Hatakeyama, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, &#8220;Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors&#8221;, <em>Jpn. J. Appl. Phys.,<\/em> vol. 57, no. 6S3, p. 06KA06, May 2018. <a href=\"https:\/\/doi.org\/10.7567\/JJAP.57.06KA06\">DOI:10.7567\/JJAP.57.06KA06<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">T.Goto<\/span>, <span style=\"text-decoration: underline;\">T.Shirai<\/span>, A.Tokuchi, T.Naito, K.Fukuda, and<span style=\"text-decoration: underline;\"> N.Iwamuro<\/span>, &#8220;Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power,&#8221;<em> Materials Science Forum<\/em>, vol.924, pp.858-861, DOI:10.4028\/www.scientific.net\/MSF.924.858, (2018).<\/li>\n<li>M.Namai, J.An, H.Yano, and N.Iwamuro, &#8220;Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage,&#8221;\u00a0 \u00a0<em>Jpn. J. Appl. Phys.,<\/em> vol. 57,\u00a0 p. 074102, June 2018. <a href=\"https:\/\/doi.org\/10.7567\/JJAP.57.06KA04\">DOI:10.7567\/JJAP.57.074102<\/a><\/li>\n<li>N.Iwamuro, &#8220;Recent Progress of SiC MOSFET Devices (Planary talk),&#8221; Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM)\u00a02018, July, Beijing (China), 2018.<\/li>\n<li>H. Nemoto, D. Okamoto, M. Sometani, Y. Kiuchi, T. Hatakeyama, S. Harada, N, Iwamuro, H. Yano &#8221; Analysis of leakage current conduction mechanisms in thermally grown oxides on p-channel 4H-SiC MOSFETs &#8221; in <em>European Conference on Silicone Carbide and Related Materials (ECSCRM2018), <\/em>September 2-6, Birmingham (UK).<\/li>\n<li>X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, H. Yano, \u201cMobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements\u201d, <em>European Conference on Silicon Carbide and Related Materials (ECSCRM)<\/em>, Sep 2-6, 2018, Birmingham, UK<\/li>\n<\/ul>\n<h5>2017\u5e74<\/h5>\n<ul>\n<li>Haruka Shimizu, Akio Shima, Yasuhiro Shimamoto, and Noriyuki Iwamuro,&#8221;Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs,&#8221; Japanese Journal of Applied Physics, vol.56, Issue 4S, 04CR15, (2017)<\/li>\n<li>Noriyuki Iwamuro and Thomas Laska, &#8220;IGBT History, State-of-the-Art, and Future Prospects,&#8221; <em>IEEE Trans. on Electron Devices, vol.64, no.3, pp.741-752,<\/em>\u00a0(2017) DOI:10.1109\/TED.2017.2654599<\/li>\n<li>(<span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span> and Thomas Laska, &#8220;Correction of IGBT History, State-of-the-Art, and Future Prospects,&#8221; <em>IEEE Trans. on Electron Devices<\/em>, vol.65, no.6, pp.2675,\u00a0\u00a0(2018))<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78, &#8220;\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\uff5e\u65e5\u672c\u306b\u6b8b\u3059\u3079\u304d\u4f53\u7cfb\u7684\u30d1\u30ef\u30a8\u30ec\u6280\u8853\uff5e,\u201d \u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a \u7b2c22\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, 2017\u5e741\u670820\u65e5<\/li>\n<li>\u5b89\u4fca\u5091\u3001\u751f\u4e95\u6b63\u8f1d\u3001\u5ca1\u672c\u5927\u3001\u77e2\u91ce\u88d5\u53f8\u3001\u53ea\u91ce\u535a\u3001\u5ca9\u5ba4\u61b2\u5e78\u3001\u2018\u2018Unclamped Inductive Switching\u8a66\u9a13\u306b\u3088\u308b4H-SiC MOSFET\u306e\u6700\u5927\u63a5\u5408\u6e29\u5ea6\u306e\u8a55\u4fa1\u201d\u3001\u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cC\u3001137\u5dfb 2\u53f7 C\u5206\u518a\u3001pp.216-221 (2017).<\/li>\n<li>\n<p class=\"field field-type-text\" style=\"color: #494949;\">\u5ca9\u5ba4\u61b2\u5e78\u3001\u5742\u6771\u7ae0\u3001\u77e2\u91ce\u6d69\u53f8\u3001\u5bae\u6fa4\u54f2\u54c9\u3001\u6c5f\u53e3\u535a\u81e3\u3001\u4e09\u6d66\u559c\u76f4\u3001\u9e7f\u5185\u6d0b\u5fd7\u3001\u6c60\u7530\u6210\u660e\u3001\u4e0a\u672c\u5eb7\u88d5\u3001\u5e73\u5ca9\u7be4\u3001\u201d\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u201d\u3001\u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cC\u3001137\u5dfb1\u53f7C\u5206\u518a\u3001pp.13-19 (2017) DOI:10.1541\/ieejeiss.137.13<\/p>\n<\/li>\n<li>\u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8, &#8220;SiC-p+\/p-\/n+\u578b\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9006\u56de\u5fa9\u6642\u306b\u304a\u3051\u308b\u30ad\u30e3\u30ea\u30a2\u306e\u6383\u51fa\u3057\u3068\u30d1\u30eb\u30b9\u751f\u6210\u306e\u95a2\u4fc2\u6027\u89e3\u6790,&#8221; \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670815\u65e5<\/li>\n<li>\u5f8c\u85e4\u5927\u6cb3, \u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8, \u201cSiC-p MOSFET\u306e\u30dc\u30c7\u30a3\u30c0\u30a4\u30aa\u30fc\u30c9\u3092\u7528\u3044\u305fSiC-pin\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9006\u56de\u5fa9\u7279\u6027\u89e3\u6790\u201d \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670815\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78 &#8220;Si\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30d7\u30ed\u30bb\u30b9\u306e\u6700\u65b0\u52d5\u5411\u201d\u3000\u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c\u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670816\u65e5<\/li>\n<li>\u5929\u91ce\u8cb4\u7ae0, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u7560\u5c71\u54f2\u592b, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;SiC MOSFET\u306e\u30db\u30fc\u30eb\u79fb\u52d5\u5ea6\u306e\u6e29\u5ea6\u4f9d\u5b58\u6027,&#8221; \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670817\u65e5<\/li>\n<li>\u738b\u7dd2\u6606, \u5ca1\u672c\u5927, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u7a92\u5316\u3057\u305fSiC MOSFET\u306b\u5bfe\u3059\u308b\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u7279\u6027\u306e\u30c7\u30e5\u30fc\u30c6\u30a3\u6bd4\u4f9d\u5b58\u6027,&#8221; \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670817\u65e5<\/li>\n<li>\u5965\u7530\u4e00\u771f\uff0c\u9ad8\u5d8b\u85ab\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u201c\u8a66\u4f5cSiC-p\u30c1\u30e3\u30cd\u30ebMOSFET\u3092\u9069\u7528\u3057\u305f\u30d5\u30eb-SiC\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c\u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5bcc\u5c71\u5927\u5b66\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78 &#8220;\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411(SiC,GaN)\u201d \u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a \u516c\u958b\u7814\u7a76\u4f1a, 2017\u5e743\u670821\u65e5<\/li>\n<li>Masaki Namai, Junjie An, Hiroshi Yano and Noriyuki Iwamuro, &#8220;Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability,&#8221; in Proceedings of\u00a0International Symposium on Power Semiconductor Devices &amp; ICs (ISPSD)2017,\u00a0pp.363-366, (2017).<\/li>\n<li>J.An, M. Namai, H. Yano, and N.Iwamuro, &#8220;<span class=\"ng-binding\">Investigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications<\/span>,&#8221; <em>IEEE Trans. Electron Devices<\/em>, <span style=\"color: #000000;\">Vol. 64, No.10, pp:4219-4225, Oct.\u00a0<\/span>2017, doi: <a class=\"ng-binding ng-isolate-scope\" href=\"https:\/\/doi.org\/10.1109\/TED.2017.2742542\" target=\"_blank\">10.1109\/TED.2017.2742542<\/a>.<\/li>\n<li>T.Goto, T.Shirai, A.Tokuchi, T.Naito, K.Fukuda, and N.Iwamuro,\u00a0&#8220;Experimental demonstration on ultra-high voltage and high speed 4H-SiC DSRD with smaller numbers of die stacks for pulse power applications,&#8221; Abstract of ICSCRM2017, September, 2017,Washington D.C, MO.D1.2.<\/li>\n<li>Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani,Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano, &#8220;Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors&#8221;\u00a0<em><em>in Proceedings of International Workshop on Dielectric Thin films for Future Electron Devices\u00a0<em>(IWDTF\u00a02017)\u00a0November\u00a020-22,\u00a02017,\u00a0Nara, Japan.<\/em><\/em><\/em><\/li>\n<li>Yuki Karamoto, Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano, &#8220;Analysis of fast and slow responses of interface traps in p-type SiC MOS capacitors by conductance method&#8221; <em>in Proceedings of International Workshop on Dielectric Thin films for Future Electron Devices (IWDTF 2017) November 20-22, 2017, Nara, Japan. <\/em><\/li>\n<li>Noriyuki Iwamuro,&#8221;Recent Progress of Power Semiconductor Devices and Their Future (Invited),&#8221; 2017 <em>IEEE CPMT Symposium Japan<\/em>, November 20-22, 2017, Kyoto, Japan, 15-02, pp.191-194, doi<strong>: <\/strong> <a class=\"ng-binding ng-isolate-scope\" href=\"https:\/\/doi.org\/10.1109\/ICSJ.2017.8240114\" target=\"_blank\">10.1109\/ICSJ.2017.8240114<\/a> .<\/li>\n<\/ul>\n<h5 class=\"field field-type-text\" style=\"color: #494949;\">2016\u5e74<\/h5>\n<ul>\n<li>Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano, &#8220;A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors,&#8221; in <em>47th IEEE Semiconductor Interface Specialists Conference<\/em>, San Diego, CA, United States, 2016.12.9<\/li>\n<li>Junjie An, Masaki Namai, Mikiko Tanabe, Dai Okamoto, Hiroshi Yano, and\u00a0Noriyuki Iwamuro, &#8220;Experimental Demonstration of -730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications&#8221;, in <em>62nd International Electron Device Meeting, IEDM 2016, 10.7,<\/em> San Fancisco, United Sates, 4-7 Dec, 2016.<\/li>\n<li>J.An, M.Namai, and N.Iwamuro, &#8220;Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation,&#8221; <em>Japanese Journal of Applied Physics, vol.55, 124102-1~4<\/em>, (2016).<\/li>\n<li>\u5f35\u65ed\u82b3, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;Quantitative estimation of near-interface traps with distributed circuit model for 4H-SiC MOS capacitors,&#8221; \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u738b\u7dd2\u6606, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u306b\u3088\u308b4H-SiC MOSFET\u306e\u754c\u9762\u8fd1\u508d\u9178\u5316\u819c\u6b20\u9665\u306e\u89e3\u6790&#8221;, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u5510\u672c\u7950\u6a39, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u67d3\u8c37\u6e80, \u7560\u5c71\u54f2\u592b, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u7a92\u5316\u3057\u305fp\u578bSiC MOS\u30ad\u30e3\u30d1\u30b7\u30bf\u306b\u304a\u3051\u308b\u53cd\u8ee2\u5c64\u306e\u5f62\u6210,&#8221; \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u7530\u9089\u4e09\u7d00\u5b50,\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30c1\u30e3\u30fc\u30b8\u30a4\u30f3\u30d0\u30e9\u30f3\u30b9\u3092\u8003\u616e\u3057\u305f SiC Superjunction MOSFET\u306e\u30aa\u30f3\u62b5\u6297-\u7d20\u5b50\u8010\u5727\u5411\u4e0a\u306e\u691c\u8a0e,&#8221;\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c3\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u751f\u4e95\u6b63\u8f1d, \u5b89\u4fca\u5091, \u5ca9\u5ba4\u61b2\u5e78, &#8220;SiC MOSFET\u8ca0\u8377\u77ed\u7d61\u6642\u306e\u7d20\u5b50\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u89e3\u6790,&#8221; \u7b2c36\u56de\u30ca\u30ce\u30c6\u30b9\u30c6\u30a3\u30f3\u30b0\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u5343\u91cc\u30e9\u30a4\u30d5\u30b5\u30a4\u30a8\u30f3\u30b9\u30bb\u30f3\u30bf\u30fc, 2016\u5e7411\u67089\u65e5<\/li>\n<li>\u5965\u7530\u4e00\u771f, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78\uff0c&#8221;\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u306b\u3088\u308b\u554f\u984c\u3092\u89e3\u6d88\u3059\u308b\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u7814\u7a76&#8221;\uff0c\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u5317\u4e5d\u5dde\uff08\u4e5d\u5dde\u5de5\u696d\u5927\u5b66\u3000\u6238\u7551\u30ad\u30e3\u30f3\u30d1\u30b9\uff09, 2016\u5e7411\u670814\u30fb15\u65e5<\/li>\n<li>K.Okuda, T.Isobe, H.Tadano, and N.Iwamuro,&#8221;A dead-time minimized inverter by using complementary topology and its experimental evaluation of harmonics reduction,&#8221; <em>EPE2016, ECCE Europe<\/em>, September, 2016.<\/li>\n<li>\u7530\u9089\u4e09\u7d00\u5b50, \u5ca9\u5ba4\u61b2\u5e78, &#8220;\uff81\uff6c\uff70\uff7c\uff9e\uff72\uff9d\uff8a\uff9e\uff97\uff9d\uff7d\u3092\u8003\u616e\u3057\u305fSiC Superjunction MOSFET\u306e\u30aa\u30f3\u62b5\u6297-\u7d20\u5b50\u8010\u5727\u5411\u4e0a\u306e\u691c\u8a0e,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a 2016\u5e749\u6708<\/li>\n<li>\u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8, &#8220;\u9ad8\u96fb\u5727\u30fb\u9ad8\u901f\u30d1\u30eb\u30b9\u767a\u751f\u3092\u76ee\u6307\u3057\u305fSiC-pin\uff80\uff9e\uff72\uff75\uff70\uff84\uff9e\u306e\u9006\u56de\u5fa9\u89e3\u6790&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a 2016\u5e749\u6708<\/li>\n<li>\u5185\u85e4\u5b5d\uff0c\u798f\u7530\u61b2\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u5fb3\u5730\u660e\uff0c\u201d\u9ad8\u901f\u30fb\u9ad8\u96fb\u5727\u30d1\u30eb\u30b9\u96fb\u6e90\u306e\u958b\u767a\uff0c\u201d\u3000\u7b2c13\u56de\u65e5\u672c\u52a0\u901f\u5668\u5b66\u4f1a\u5e74\u4f1a\uff0c\u5e55\u5f35\u30e1\u30c3\u30bb\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2016\u5e748\u67088\u65e5<\/li>\n<li>\n<div class=\"field field-type-text\" style=\"color: #494949;\">T.Murakami, T.Masuda, S.Inoue, H.Yano, N.Iwamuro, and T. Shimoda,&#8221;Photoelectron yield spectroscopy and inverse photoemissin spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials,&#8221; AIP Advances, vol.6, 055021 (2016)<\/div>\n<\/li>\n<li>\n<div class=\"field field-type-text\" style=\"color: #494949;\">J.An, M.Namai, D.Okamoto, H.Yano, H.Tadano, and N.Iwamuro, &#8220;Evaluation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test,&#8221;<em> ICEE 2016, ID 90276<\/em>, July, 2016.<\/div>\n<\/li>\n<li>\n<div class=\"field field-type-text\" style=\"color: #494949;\">J. An, M. Namai, D.Okamoto, H.Yano, H. Tadano and N.Iwamuro,&#8221;Electrothermal evaluation of SiC MOSFETs during unclamped inductive switching,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a,\u00a02016\u5e743\u670816\u65e5<\/div>\n<\/li>\n<li>\n<div class=\"field field-type-text\" style=\"color: #494949;\">\u751f\u4e95\u6b63\u8f1d, \u5b89\u4fca\u5091, \u5ca1\u672c\u5927, \u77e2\u91ce\u88d5\u53f8, \u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78\uff0c\u201dSiC-MOSFET\u306eUIS\u8010\u91cf\u8a55\u4fa1&#8221; \u3000\u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a,\u00a0 2016\u5e743\u670816\u65e5<\/div>\n<\/li>\n<li>\n<div class=\"field field-type-text\" style=\"color: #494949;\">\u5d8b\u7530\u9686\u4e00, \u78ef\u90e8\u9ad8\u7bc4,\u00a0\u00a0\u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78\uff0c\u201dSiC-MOSFET\u306b\u3088\u308b\u7121\u30a2\u30fc\u30af\u4f4e\u30ce\u30a4\u30ba\u958b\u9589\u5668&#8221; \u3000\u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a,\u00a0 2016\u5e743\u670816\u65e5<\/div>\n<\/li>\n<\/ul>\n<h5 class=\"field field-type-text\" style=\"color: #494949;\">2015\u5e74<\/h5>\n<div class=\"field field-type-text\" style=\"color: #494949;\">\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411\uff08SiC,GaN,\u9178\u5316\u30ac\u30ea\u30a6\u30e0\uff09,&#8221; \u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a\u3000\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u7814\u7a76\u4f1a\u3000\u516c\u958b\u7814\u7a76\u4f1a\u30002015\u5e7410\u670814\u65e5<\/li>\n<li>\u5965\u7530\u4e00\u771f\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u201d\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u3092\u6700\u5c0f\u5316\u3059\u308b\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u53ca\u3073\u305d\u306e\u30b2\u30fc\u30c8\u99c6\u52d5\u56de\u8def\u306b\u95a2\u3059\u308b\u691c\u8a0e,\u201d\u3000\u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a, \u5927\u5206\u5927\u5b66\u65e6\u91ce\u539f\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e749\u67082\u65e5\uff5e9\u67084\u65e5<\/li>\n<li>Noriyuki Iwamuro, \u201dRecent Progress of Power Semiconductor Devices and Their Futures(Inveited)<em>,&#8221; in BIT&#8217;s 4th Annual World\u00a0Congress of Emerging Info-Tech 2015, April.<\/em><\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u6700\u65b0\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u958b\u767a\u52d5\u5411\u201d\u3000\u7b2c29\u56de\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a\u6625\u5b63\u8b1b\u6f14\u5927\u4f1a\u30002015\u5e743\u670818\u65e5<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u30b7\u30ea\u30b3\u30f3IGBT\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411\u201d\u3000\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u3000\u7b2c2\u56de\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u7814\u7a76\u4f1a\u30002015\u5e743\u67085\u65e5<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u3068\u8ab2\u984c\u201d\u3000\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a\u6a5f\u80fd\u6027\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u6750\u6599\u7814\u7a76\u4f1a\u30002015\u5e741\u670829\u65e5<\/li>\n<\/ul>\n<\/div>\n<h5>2014\u5e74<\/h5>\n<ul>\n<li>\u5965\u7530\u4e00\u771f\u3001\u78ef\u90e8\u9ad8\u7bc4\u3001\u77e2\u91ce\u88d5\u53f8\u3001\u5ca9\u5ba4\u61b2\u5e78\u3001\u53ea\u91ce\u535a\u3000\u201d\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u5411\u3051\u7e26\u578bSiC-pMOSFET\u306e\u691c\u8a0e\u201d\u3000\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c206\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a\u30012014\u5e7412\u670820\u65e5<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6\u3068\u305d\u306e\u53ef\u80fd\u6027\u201d\u3000\u65e5\u672c\u5b66\u8853\u632f\u8208\u4f1a\u3000\u771f\u7a7a\u30ca\u30ce\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u7b2c158\u59d4\u54e1\u4f1a\u30012014\u5e744\u670824\u65e5<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSi\u306a\u3089\u3073\u306bSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u3068\u5fdc\u7528\u6a5f\u5668\u958b\u767a\u201d\u3000\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u7dcf\u5408\u5927\u4f1a\u30012014\u5e743\u670820\u65e5<\/li>\n<\/ul>\n<h3><strong>\u7279\u8a31<\/strong><\/h3>\n<h5>2021\u5e74<\/h5>\n<ul>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u53ca\u3073\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6823614, 2021.1.13)<\/li>\n<\/ul>\n<h5>2020\u5e74<\/h5>\n<ul>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u958b2020-77664, 2020.5.21)<\/li>\n<\/ul>\n<h5>2019\u5e74<\/h5>\n<ul>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c6609283, 2019.11.1)<\/li>\n<li>High Voltage Semiconductor Devices (USP 10,263,105, 2019.4.16)<\/li>\n<li>Vertical high voltage semicouductor apparatus and fabrication method of vertical high voltage semiconductor apparatus\u00a0(USP 10,211,330, 2019.2.19)<\/li>\n<\/ul>\n<h5>2018\u5e74<\/h5>\n<ul>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u516c\u958b\u756a\u53f72018-170392, 2018.11.1)<\/li>\n<li>Silicon carbide devices and fabrication method (USP 10,090,417, 2018.10.2)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6384944, 2018.8.17\uff09<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u516c\u958b\u756a\u53f72018-125553, 2018.8.9)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u516c\u958b\u756a\u53f72018-110257, 2018.7.12\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u516c\u958b\u756a\u53f72018-006564, 2018.1.11\uff09<\/li>\n<li>\u70ad\u5316\u30b1\u30a4\u7d20\u7e26\u578bMOSFET\u304a\u3088\u3073\u305d\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6338134, 2018.5.18\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c6278549, 2018.1.26\uff09<\/li>\n<\/ul>\n<h5>2017\u5e74<\/h5>\n<ul>\n<li>Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device (USP 9,799,732, 2017.10.24)<\/li>\n<li>Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor appatus (USP 9,722,018, 2017.8.1)<\/li>\n<li>Silicon carbide semiconductor device and fabrication method thereof (USP 9,673,313, 2017.6.7)<\/li>\n<li>Semiconductor Device (USP 9,627,486 B2, 2017.4.18)<\/li>\n<li>Semiconductor Device With SiC Base Layer (USP 9,537,002 B2, 2017.1.3)<\/li>\n<li>\u9ad8\u8010\u5727\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u305d\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6241958, 2017.12.13)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5(\u7279\u8a31\u7b2c6206862, 2017.9.15)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u7d20\u5b50\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6156814, 2017.6.16)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u7d20\u5b50\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6089235, 2017.2.17)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u305d\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c6074787, 2017.1.20)<\/li>\n<li>Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus (USP20170213886A1, 2017.7.27)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u516c\u958b\u756a\u53f72017-139507\uff09<\/li>\n<li>\u9ad8\u8010\u5727\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u305d\u306e\u88fd\u9020\u65b9\u6cd5\uff08WO2015-019797, 2017.3.2)<\/li>\n<\/ul>\n<h5>2016\u5e74<\/h5>\n<ul>\n<li>Wide band gap semiconductor device\u00a0 (USP 9,455,326 B2, 2016.9.27)<\/li>\n<li>High voltage semiconductor apparatus (USP 9,450,051 B2, 2016.9.20)<\/li>\n<li>Vertical high-voltage semiconductor device and fabrication method thereof (USP 9,362,392 B2, 2016.6.7)<\/li>\n<li>Semiconductor device (USP 9,356,100 B2, 2016.5.31)<\/li>\n<li>Wide band gap semiconductor device and method for producing the same (USP 9,252,266 B2, 2016.2.2)<\/li>\n<li>High voltage semiconductor device and manufacturing method thereof (USP 20160155836 A1, 2016.6.2)<\/li>\n<li>\u7e26\u578b\u9ad8\u8010\u5727\u88c5\u7f6e\u304a\u3088\u3073\u7e26\u578b\u9ad8\u8010\u5727\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c5995252, 2016.9.2)<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5963385, 2016.7.8)<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c5939626, 2016.5.27)<\/li>\n<li>\u7e26\u578b\u9ad8\u8010\u5727\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\u304a\u3088\u3073\u7e26\u578b\u9ad8\u8010\u5727\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5939624, 2016.5.27)<\/li>\n<li>\u524d\u99c6\u4f53\u6eb6\u6db2\u53ca\u3073\u30b7\u30ea\u30b3\u30f3\u3092\u542b\u6709\u3059\u308b\u5c64\u3001\u306a\u3089\u3073\u306b\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u7d20\u5b50\u53ca\u3073\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u7d20\u5b50\u306e\u88fd\u9020\u65b9\u6cd5\u3000\uff08\u516c\u958b\u756a\u53f72016-152378, 2016.8.22\uff09<\/li>\n<li>\u96fb\u529b\u5909\u63db\u88c5\u7f6e\u3000\uff08\u516c\u958b\u756a\u53f72016-119774, 2016.6.30\uff09<\/li>\n<li>\u96fb\u529b\u5909\u63db\u88c5\u7f6e\u3000\uff08\u516c\u958b\u756a\u53f72016-119773, 2016.6.30\uff09<\/li>\n<\/ul>\n<h5>2015\u5e74<\/h5>\n<ul>\n<li>Silicon carbide vertical field effect transistor (USP 9,184,230 B2, 2015.11.10)<\/li>\n<li>Fabrication method of silicon carbide semiconductor device (USP 9,040,402, 2015.5.26)<\/li>\n<li>Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device (USP20150144965 A1, 2015.5.28)<\/li>\n<li>Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device (USP20150115287 A1, 2015.4.30)<\/li>\n<li>Silicon carbide semiconductor device and fabrication method thereof (USP20150102363 A1, 2015.4.16)<\/li>\n<li>Semiconductor device (USP20150108501 A1, 2015.4.23)<\/li>\n<li>Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus (USP20150076519 A1, 2015.3.19)<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5818099, 2015.10.9)<\/li>\n<li>\u9006\u8010\u5727\u3092\u6709\u3059\u308b\u7e26\u578b\u7a92\u5316\u30ac\u30ea\u30a6\u30e0\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5682102, 2015.1.23\uff09<\/li>\n<li>\u7e26\u578b\u9ad8\u8010\u5727\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u305d\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u516c\u958b\u756a\u53f7WO2013-161420, 2015.12.24\uff09<\/li>\n<li>\u30ef\u30a4\u30c9\u30d0\u30f3\u30c9\u30ae\u30e3\u30c3\u30d7\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u516c\u958b\u756a\u53f72015-207780, 2015.11.19\uff09<\/li>\n<\/ul>\n<h5>2014\u5e74<\/h5>\n<ul>\n<li>Semiconductor device (USP 8,779,504 B2, 2014.7.15)<\/li>\n<li>\u30ef\u30a4\u30c9\u30d0\u30f3\u30c9\u30ae\u30e3\u30c3\u30d7\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5617175,\u00a02014.9.26\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\u3000\uff08\u7279\u8a31\u7b2c5444608,\u00a02014.1.10\uff09<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u7e26\u578b\u96fb\u754c\u52b9\u679c\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\uff08\u516c\u958b\u756a\u53f7WO2012-137914, 2014.7.28\uff09<\/li>\n<\/ul>\n<h5>2013\u5e74<\/h5>\n<ul>\n<li>Low on-resistance wide band gap semiconductor device and method for producing the same (USP 8,564,028 B2, 2013.10.22)<\/li>\n<li>Semiconductor device (USP 8,431,991 B2, 2013.4.30)<\/li>\n<li>Gallium nitride semiconductor device and manufacturing method thereof (USP 8,390,027 B2, 2013.3.5)<\/li>\n<li>\u7a92\u5316\u30ac\u30ea\u30a6\u30e0\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c54316677, 2013.12.13\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\u304a\u3088\u3073\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c5369372, 2013.9.27\uff09<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u30c8\u30ec\u30f3\u30c1MOS\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5358926, 2013.9.13\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c5353036, 2013.9.6\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\u3068\u305d\u306e\u88fd\u9020\u65b9\u6cd5\uff08\u7279\u8a31\u7b2c5332376, 2013.8.9\uff09<\/li>\n<li>\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5298488, 2013.6.28\uff09<\/li>\n<li>\u70ad\u5316\u73ea\u7d20\u534a\u5c0e\u4f53\u88c5\u7f6e\uff08\u7279\u8a31\u7b2c5233158, 2013.4.5\uff09<\/li>\n<li>\u4ed6<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3><strong>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u3001\u8b1b\u6f14\u7b49<\/strong><\/h3>\n<h5>\u9023\u8f09<\/h5>\n<ul>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u57fa\u790e\u8b1b\u5ea7\u201d\u3000\u51688\u56de\u3000\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30fb\u30a4\u30cd\u30fc\u30d6\u30ea\u30f3\u30b0\u5354\u4f1a\u3000\u4f1a\u5831\u8a8c<\/li>\n<\/ul>\n<h5>2019\u5e74<\/h5>\n<ul>\n<li>N. Iwamuro, &#8220;Recent Progress of SiC-MOSFETs and Competition with state-of-the-art Si-IGBTs,&#8221; National Tsing Hua University (Taiwan)\u00a0(\u56fd\u7acb\u6e05\u83ef\u5927\u5b66\uff09, May 27th, 2019.<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78, \u201d\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u201d\u3000GaN\u7814\u7a76\u30b3\u30f3\u30bd\u30fc\u30b7\u30a2\u30e0\u3000\u7b2c3\u56de\u30b9\u30d7\u30ea\u30f3\u30b0\u30b9\u30af\u30fc\u30eb\u8b1b\u7fa9\u3001\u540d\u53e4\u5c4b\u5927\u5b66, 2019\u5e743\u670826\u65e5<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78,\u3000\u7b2c1\u7bc0\u3000\u201d\u30b5\u30fc\u30de\u30eb\u30de\u30cd\u30fc\u30b8\u30e1\u30f3\u30c8\u3000\uff0d\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u6280\u8853\u3068\u8ab2\u984c\uff0d&#8221;, \u30b5\u30fc\u30de\u30eb\u30c7\u30d0\u30a4\u30b9\u3000\u65b0\u7d20\u6750\u30fb\u65b0\u6280\u8853\u306b\u3088\u308b\u71b1\u306e\u9ad8\u5ea6\u5236\u5fa1\u3068\u9ad8\u52b9\u7387\u5229\u7528, \u76e3\u4fee\uff1a\u821f\u6a4b\u826f\u6b21\/\u5c0f\u539f\u6625\u5f66, 2019.04, \u3231\u30a8\u30cc\u30fb\u30c6\u30a3\u30fc\u30fb\u30a8\u30b9.<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78,\u3000&#8221;IV. \u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6&#8221;, \u7c89\u4f53\u6280\u8853 6\u6708\u53f7, 2019.<\/li>\n<\/ul>\n<h5>2018\u5e74<\/h5>\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78\u00a0 \u201d\u65b0\u6750\u6599\u306e\u5b9f\u7528\u5316\u304c\u9032\u3080\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u3000\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u57fa\u790e\u201d, \u96fb\u6c17\u7dcf\u5408\u8a8c\u300c\u30aa\u30fc\u30e0\u3000OHM\u300d1\u6708\u53f7, 2018\u5e741\u67085\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78 \u201dSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u958b\u767a\u3068\u8eca\u8f09\u7528\u9014\u3078\u306e\u8981\u671b&#8221;, \u8eca\u8f09\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u30002\u6708\u53f7, \u6280\u8853\u60c5\u5831\u5354\u4f1a, \u00a02018\u5e742\u670827\u65e5<\/li>\n<li>Noriyuki Iwamuro, \u201cLow-cost SiC-MOSFETs poise for global adoption\u201d, ASIA ELECTRONICS INDUSTRY, 2018\u5e749\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<li>Noriyuki Iwamuro, &#8220;State-of-the-art and Future Prospective of Si-IGBT Technologies,&#8221; The 4th Int. Academic Forum of China IGBT Technology Innovation and Industry Alliance (2018.11.6, Zhuzhou, China)<\/li>\n<li>Noriyuki Iwamuro, &#8220;innovations Find Optimal Materials, Structure for Power Device,&#8221; ASIA ELECTRONICS INDUSTRY, 2018\u5e7411\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<\/ul>\n<h5><strong>2017\u5e74<\/strong><\/h5>\n<ul>\n<li>Noriyuki Iwamuro, \u201cPower Semiconductors Shape up for Future Vehicles\u201d, ASIA ELECTRONICS INDUSTRY, 2017\u5e746\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<li>Junjie An, Masaki namai, Mikiko Tanabe, Dai Okamoto, Hiroshi Yano, and Noriyuki Iwamuro, &#8220;Making a debut: the p-type SiC MOSFET&#8221;, Compound Semiconductor, June, 2017.<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78, \u201d\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u3068\u305d\u306e\u5fdc\u7528\u201d\u3000\u30af\u30ea\u30fc\u30f3\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u3000vol.27, no.12 (2017)\u3000\uff08\u682a\uff09\u65e5\u672c\u5de5\u696d\u51fa\u7248<\/li>\n<\/ul>\n<h5><strong>2016\u5e74<\/strong><\/h5>\n<ul>\n<li>Noriyuki Iwamuro &#8220;Semiconductor Materials Seal Role in Power Devices&#8221; ASIA ELECTRONICS INDUSTRY, 2016\u5e749\u6708\u53f7\u3000\u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u7b51\u6ce2\u5927\u5b66\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5bc4\u9644\u8b1b\u5ea7\u306e\u3054\u7d39\u4ecb\u201d\u3000SEAJ\u3000Journal\u30002016\u5e744\u6708\u53f7\u3000\uff08\u793e\uff09\u65e5\u672c\u534a\u5c0e\u4f53\u88fd\u9020\u88c5\u7f6e\u5354\u4f1a<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u3092\u652f\u3048\u308bSiC\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306a\u3089\u3073\u306b\u305d\u306e\u5b9f\u88c5\u6280\u8853\u201d\u3000SEAJ\u3000Journal\u30002016\u5e741\u6708\u53f7\u3000\uff08\u793e\uff09\u65e5\u672c\u534a\u5c0e\u4f53\u88fd\u9020\u88c5\u7f6e\u5354\u4f1a<\/li>\n<\/ul>\n<h5>2015\u5e74<\/h5>\n<ul>\n<li>Noriyuki Iwamuro, \u201dRecent Power Semiconductor Devices Technologies fora Future Smart Society&#8221; Japan-Norway Energy Science Week 2015, 27th May, 2015.<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSiC\u30d1\u30ef\u30fc\u30e2\u30b8\u30e5\u30fc\u30eb\u3068GaN\u30d1\u30ef\u30fc\u30e2\u30b8\u30e5\u30fc\u30eb\u306e\u6280\u8853\u52d5\u5411\u201d\u3000\u30a8\u30cd\u30eb\u30ae\u30fc\u30c7\u30d0\u30a4\u30b9\u30002015\u5e742\u6708\u53f7\u3000\uff08\u682a\uff09\u6280\u8853\u60c5\u5831\u5354\u4f1a<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u00a0 \u00a0\u201d\u7814\u7a76\u5ba4\u7d39\u4ecb\uff1a\u7b51\u6ce2\u5927\u5b66\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u7814\u7a76\u5ba4\u201d\u3000\u30af\u30ea\u30fc\u30f3\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u3000vol.25, no.4 (2015)\u3000\uff08\u682a\uff09\u65e5\u672c\u5de5\u696d\u51fa\u7248<\/li>\n<\/ul>\n<h5>2014\u5e74<\/h5>\n<ul>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u6700\u65b0\u306e\u5404\u7a2e\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u52d5\u5411\u3068\u305d\u306e\u5fdc\u7528\u4f8b\u201d\u30002015\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u5927\u5168\u3001\uff08\u682a\uff09\u96fb\u5b50\u30b8\u30e3\u30fc\u30ca\u30eb<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u8a2d\u8a08\u30fb\u88fd\u9020\u6280\u8853\u201d\u30002015\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u5927\u5168\u3001\uff08\u682a\uff09\u96fb\u5b50\u30b8\u30e3\u30fc\u30ca\u30eb<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dIGBT\u306e\u73fe\u72b6\u3068\u6700\u65b0\u52d5\u5411\u201d\u30002015\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u5927\u5168\u3001\uff08\u682a\uff09\u96fb\u5b50\u30b8\u30e3\u30fc\u30ca\u30eb<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306b\u304a\u3051\u308b5\u5e74\u5f8c\u300110\u5e74\u5f8c\u306e\u5e02\u5834\u3001\u6280\u8853\u306e\u65b9\u5411\u6027\u201d\u300010\u5e74\u5f8c\u306e\u5e02\u5834\u30fb\u6280\u8853\u4e88\u6e2c\u3068\u305d\u3053\u304b\u3089\u8aad\u307f\u89e3\u304f\u5fc5\u7136\u306e\u7814\u7a76\u30c6\u30fc\u30de\u30002014\u5e748\u6708\u3001\uff08\u682a\uff09\u6280\u8853\u60c5\u5831\u5354\u4f1a<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSiC\/GaN\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u9ad8\u4fe1\u983c\u5316\u306b\u5411\u3051\u305f\u8981\u7d20\u6280\u8853\u201d\u3000\u96fb\u5b50\u6a5f\u5668\u30fb\u90e8\u54c1\u306b\u304a\u3051\u308b\u6545\u969c\u30fb\u767a\u706b\u539f\u56e0\u89e3\u6790\u3068\u5bfe\u7b56\u6280\u8853\u30002014\u5e747\u6708\u3001\uff08\u682a\uff09\u6280\u8853\u60c5\u5831\u5354\u4f1a<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSi\u306a\u3089\u3073\u306bSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u6700\u65b0\u6280\u8853\u3068\u8ab2\u984c\u201d\u3000\u30af\u30ea\u30fc\u30f3\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u3000vol.24, no.4 (2014)\u3000\uff08\u682a\uff09\u65e5\u672c\u5de5\u696d\u51fa\u7248<\/li>\n<\/ul>\n<h5>2013\u5e74<\/h5>\n<ul>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u30b7\u30ea\u30b3\u30f3\uff08Si)\u306a\u3089\u3073\u306bSiC\/GaN\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411\u201d\u3000\u6708\u520a\u30c8\u30e9\u30a4\u30dd\u30ed\u30b8\u30fc\u30002013\u5e7411\u6708\u53f7<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6280\u8853\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u201d\u3000\u30a8\u30cd\u30eb\u30ae\u30fc\u30c7\u30d0\u30a4\u30b9\u30002013\u5e7410\u6708\u53f7\u3000\uff08\u682a\uff09\u6280\u8853\u60c5\u5831\u5354\u4f1a<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>\u5c02\u9580<\/h3>\n<ul>\n<li>Si-IGBT\/Diode \u306a\u3089\u3073\u306bSiC-MOSFET\/SBD\u30c7\u30d0\u30a4\u30b9\u7814\u7a76\u958b\u767a<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"&nbsp; \u5ca9\u5ba4 \u61b2\u5e78 \uff08\u3044\u308f\u3080\u308d\u3000\u306e\u308a\u3086\u304d\uff09 \u5c45\u5ba4: \u5171\u540c\u7814\u7a76\u68dfD\uff08\u65e7VBL\u68df\uff09401-1 E-mail: iwamuro.noriyuki.fb@u TEL: 029-853-5446 \u5c02\u9580\u5206\u91ce\uff1a\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4 &#8230;","protected":false},"author":1,"featured_media":4065,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/151"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=151"}],"version-history":[{"count":313,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/151\/revisions"}],"predecessor-version":[{"id":1658,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/151\/revisions\/1658"}],"wp:featuredmedia":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/media\/4065"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=151"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}