{"id":1590,"date":"2015-06-08T19:40:59","date_gmt":"2015-06-08T10:40:59","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=1590"},"modified":"2017-12-15T15:52:19","modified_gmt":"2017-12-15T06:52:19","slug":"2015%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=1590","title":{"rendered":"2015\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<p>&nbsp;<\/p>\n<h3>\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587<\/h3>\n<ol>\n<li><span style=\"text-decoration: underline;\">T. Shoji<\/span>, A. Soeno, H. Toguchi, S. Aoi, Y. Watanabe, and <span style=\"text-decoration: underline;\">H. Tadano<\/span>, \u201cTheoretical analysis of short-circuit capability of SiC power MOSFETs,\u201d <em>Japanese Journal of Applied Physics (JJAP)<\/em>, vol. 54, iss. 04DP03, 2015. <a href=\"http:\/\/dx.doi.org\/10.7567\/JJAP.54.04DP03\">DOI:10.7567\/JJAP.54.04DP03<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">T. Shoji<\/span>, S. Nishida, K. Hamada, and <span style=\"text-decoration: underline;\">H. Tadano<\/span>, \u201cObservation and analysis of neutron-induced single-event burnout in silicon power diodes,\u201d <em>IEEE Transactions on Power Electronics<\/em>, vol. 30, iss. 5, pp. 2474-2480, 2015. <a href=\"http:\/\/dx.doi.org\/10.1109\/TPEL.2014.2361682\">DOI:10.1109\/TPEL.2014.2361682<\/a><\/li>\n<li>M. m. Cheng, K. Feng, <span style=\"text-decoration: underline;\">T. Isobe<\/span> and <span style=\"text-decoration: underline;\">R. Shimada<\/span>, &#8220;Characteristics of the magnetic energy recovery switch as a static Var compensator technology,&#8221; in <em>IET Power Electronics<\/em>, vol. 8, no. 8, pp. 1329-1338, 8 2015. <a href=\"http:\/\/dx.doi.org\/10.1049\/iet-pel.2014.0609\">DOI: 10.1049\/iet-pel.2014.0609<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">T. Isobe<\/span>, D. Shiojima, K. Kato, Y. R. R. Hernandez, and <span style=\"text-decoration: underline;\">R. Shimada<\/span>, \u201cFull-bridge reactive power compensator with minimized-equipped capacitor and its application to static var compensator,\u201d <em>IEEE Transactions on Power Electronics<\/em>, vol. 31, iss. 1, pp. 224-234, 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/TPEL.2015.2412954\" target=\"blank\">DOI:10.1109\/TPEL.2015.2412954<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">\u4e39\u7fbd\u7ae0\u96c5<\/span>, \u4eca\u6fa4\u5b5d\u5247, \u6728\u6751\u53cb\u5247, \u7b39\u8c37\u5353\u4e5f, <span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>, <span style=\"text-decoration: underline;\">\u53ea\u91ce\u535a<\/span>, &#8220;SiC-MOSFET\u306e\u96fb\u6d41\u30bb\u30f3\u30b9\u6a5f\u80fd\u3092\u7528\u3044\u305f\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u5236\u5fa1\u56de\u8def,&#8221; \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cD, Vol. 136, No. 2, pp. 145-151, 2016. <a href=\"http:\/\/dx.doi.org\/10.1541\/ieejias.136.145\" target=\"blank\">DOI:10.1541\/ieejias.136.145<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">H. Yano<\/span>, N. Kanafuji, A. Osawa, T. Hatayama, and T. Fuyuki, \u201cThreshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-Doped and Nitrided Gate Oxides\u201d, <em>IEEE Trans. Electron Devices<\/em>, Vol. 62, No.2, pp.324-332 (2015)DOI: 10.1109\/TED.2014.2358260<\/li>\n<\/ol>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09<\/h3>\n<ul>\n<li>Noriyuki Iwamuro, \u201dRecent Progress of Power Semiconductor Devices and Their Futures(Invited)<em>,&#8221; in BIT&#8217;s 4th Annual World\u00a0Congress of Emerging Info-Tech 2015, April.<\/em><\/li>\n<li>Y. Yamada, T. Isobe, R. Shimada, and H. Tadano, &#8220;Efficiency Evaluation of Rectifier System for PMSG with Highly Efficient Series Reactive Compensator,&#8221;<em> in The 18th International Conference on Electrical Machines and Systems (ICEMS2015), Pattaya, Thailand, 25-28 October 2015. <\/em><a href=\"http:\/\/dx.doi.org\/10.1109\/ICEMS.2015.7385005\">DOI: <span class=\"ng-scope\">10.1109\/ICEMS.2015.7385005<\/span><\/a><\/li>\n<li>Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, &#8220;Loss Comparison of Z-source Inverter from the\u00a0Perspective of Short-through Mode Implementation\u00a0and Type of Switching Device,&#8221;\u00a0<em>in\u00a0IEEE International Future Energy Electronics Conference(IFEEC2015), Taipei, Taiwan, 1-4 November 2015. <\/em><a href=\"http:\/\/dx.doi.org\/10.1109\/IFEEC.2015.7361518\">DOI: <span class=\"ng-scope\">10.1109\/IFEEC.2015.7361518<\/span><\/a><\/li>\n<li>Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, &#8220;Investigation of Eliminating Free-wheeling Diode\u00a0Conduction of Z-source Inverter using\u00a0SiC-MOSFET,&#8221;\u00a0<em>in\u00a0The 41st Annual Conference of the IEEE Industrial Electronics Society (IECON2015), Yokohama, Japan, 9-12 November 2015.\u3000<\/em><a href=\"http:\/\/dx.doi.org\/10.1109\/IECON.2015.7392668\">DOI:\u00a010.1109\/IECON.2015.7392668<\/a><\/li>\n<li>A. Niwa, T. Imazawa, T. Kimura, T. Sasaya, T. Isobe and H. Tadano, &#8220;Novel dead time controlled gate driver using the current sensor of SiC-MOSFET,&#8221; \u00a0<em>in\u00a0The 41st Annual Conference of the IEEE Industrial Electronics Society (IECON2015), Yokohama, Japan, 9-12 November 2015<\/em>. <a href=\"http:\/\/dx.doi.org\/10.1109\/IECON.2015.7392338\">DOI: 10.1109\/IECON.2015.7392338<\/a><\/li>\n<li>T. Senanayake, R. Iijima, T. Isobe and H. Tadano, &#8220;Improved impedance source inverter for hybrid\/electric vehicle application with continuous conduction operation,&#8221; <em>2016 IEEE Applied Power Electronics Conference and Exposition (APEC)<\/em>, Long Beach, CA, 2016, pp. 3722-3726. <a href=\"http:\/\/dx.doi.org\/10.1109\/APEC.2016.7468406\">DOI: 10.1109\/APEC.2016.7468406<\/a><\/li>\n<li>A. Henry, <span style=\"text-decoration: underline;\">H. Yano<\/span>, and T. Hatayama, \u201cPhotoluminescence of 10H-SiC\u201d, <em>The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015)<\/em>, Giardini Naxos (Italy), Tu-1A-4, 2015\/10\/6.<\/li>\n<li>T. Hatakeyama, K. Takao, Y. Yonezawa, and <span style=\"text-decoration: underline;\">H. Yano<\/span>,\u201cPragmatic Approach to the Characterization of Traps at SiC\/SiO2 Interfaces near the Conduction Band with Split C-V and Hall Measurements\u201d, <em>The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015)<\/em>, Giardini Naxos (Italy), Fr-1B-4, 2015\/10\/9.<\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09<\/h3>\n<ul>\n<li>\u5965\u7530\u4e00\u771f\uff0c\u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78\u00a0&#8220;\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u3092\u6700\u5c0f\u5316\u3059\u308b\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u53ca\u3073\u305d\u306e\u30b2\u30fc\u30c8\u99c6\u52d5\u56de\u8def\u306e\u691c\u8a0e,&#8221; \u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a, \u5927\u5206\u5927\u5b66\u65e6\u91ce\u539f\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e749\u67082\u65e5\uff5e9\u67084\u65e5<\/li>\n<li>\u5c71\u7530\u5eb8\u4ecb, \u78ef\u90e8\u9ad8\u7bc4, \u5d8b\u7530\u9686\u4e00, \u53ea\u91ce\u535a, &#8220;\u30c0\u30a4\u30aa\u30fc\u30c9\u6574\u6d41\u56de\u8def\u3068\u76f4\u5217\u7121\u52b9\u96fb\u529b\u88dc\u511f\u56de\u8def\u3092\u7d44\u307f\u5408\u308f\u305b\u305f\u6c38\u4e45\u78c1\u77f3\u540c\u671f\u767a\u96fb\u6a5f\u5411\u3051\u6574\u6d41\u56de\u8def\u306e\u640d\u5931\u5206\u6790,&#8221; \u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a, \u5927\u5206\u5927\u5b66\u65e6\u91ce\u539f\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e749\u67082\u65e5\uff5e9\u67084\u65e5<\/li>\n<li>\u6c88\u51cc\u92d2, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;SiC-MOSFET\u3092\u7528\u3044\u305fDC-DC\u30b3\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u30b2\u30fc\u30c8\u62b5\u6297\u53ca\u3073\u5916\u4ed8SiC-SBD\u306e\u6709\u7121\u3068\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u640d\u5931\u306e\u95a2\u4fc2\u8a55\u4fa1,&#8221; \u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a, \u5927\u5206\u5927\u5b66\u65e6\u91ce\u539f\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e749\u67082\u65e5\uff5e9\u67084\u65e5<\/li>\n<li>\u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;Z \u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u4e0a\u4e0b\u77ed\u7d61\u65b9\u5f0f\u3068\u534a\u5c0e\u4f53\u7d20\u5b50\u306e\u9055\u3044\u306b\u3088\u308b\u767a\u751f\u640d\u5931\u306e\u6bd4\u8f03,&#8221; \u5e73\u621027\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a, \u5927\u5206\u5927\u5b66\u65e6\u91ce\u539f\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e749\u67082\u65e5\uff5e9\u67084\u65e5<\/li>\n<li>\u5f35\u5263\u97dc,\u00a0\u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a,&#8221;\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u3068\u305d\u306e\u30bd\u30d5\u30c8\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u5316\u306e\u691c\u8a0e,&#8221;\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c211\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a,\u795e\u6238\u5e02\u7acb\u5de5\u696d\u9ad8\u7b49\u5c02\u9580\u5b66\u6821,2015\u5e7412\u670819\u65e5<\/li>\n<li>\u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;SiC-MOSFET\u3092\u7528\u3044\u305fZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u30dc\u30c7\u30a3\u30fc\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u7121\u901a\u96fb\u904b\u8ee2\u306b\u95a2\u3059\u308b\u691c\u8a0e,&#8221; \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u4e5d\u5dde(\u4e5d\u5dde\u5de5\u696d\u5927\u5b66\u3000\u6238\u7551\u30ad\u30e3\u30f3\u30d1\u30b9), 2016\u5e743\u67088\u65e5\uff5e3\u67089\u65e5<\/li>\n<li>Barrera Cardenas Rene Alexander, Takanori Isobe (University of Tsukuba), Molinas Marta (Norwegian University of Science and Technology), &#8220;A meta-parameterised approach for the evaluation of semiconductor technologies: a comparison between SiC MOSFET and Si IGBT technologies,&#8221; \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u4e5d\u5dde(\u4e5d\u5dde\u5de5\u696d\u5927\u5b66\u3000\u6238\u7551\u30ad\u30e3\u30f3\u30d1\u30b9), 2016\u5e743\u67088\u65e5\uff5e3\u67089\u65e5<\/li>\n<li>\u5d8b\u7530\u9686\u4e00, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78, &#8220;SiC-MOSFET\u306b\u3088\u308b\u7121\u30a2\u30fc\u30af\u4f4e\u30ce\u30a4\u30ba\u958b\u9589\u5668,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u3000\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u5b89\u4fca\u5091, \u751f\u4e95\u6b63\u8f1d, \u5ca1\u672c\u5927, \u53ea\u91ce\u535a, \u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78, &#8220;Electrothermal Evaluation of SiC MOSFETs during Unclamped Inductive Switching,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u3000\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u751f\u4e95\u6b63\u8f1d, \u5b89\u4fca\u5091, \u5ca1\u672c\u5927, \u53ea\u91ce\u535a, \u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78, &#8220;SiC-MOSFET\u306eUIS\u8010\u91cf\u8a55\u4fa1,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u3000\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;q-Z\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308bMOSFET\u3092\u7528\u3044\u305f\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u640d\u5931\u4f4e\u6e1b\u306b\u95a2\u3059\u308b\u5b9f\u9a13\u7684\u691c\u8a0e,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u3000\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u9673\u5049\u592b, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a (\u7b51\u6ce2\u5927\u5b66),\u3000\u5ddd\u6ce2\u9756\u5f66, \u5bfa\u5712\u52dd\u5fd7 (\u5b89\u5ddd\u96fb\u6a5f), &#8220;Dual Active Bridge\u30b3\u30f3\u30d0\u30fc\u30bf\u306e\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u6700\u9069\u5316\u306b\u95a2\u3059\u308b\u5b9f\u9a13\u7684\u691c\u8a0e,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u3000\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u5f35\u9f8d, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a (\u7b51\u6ce2\u5927\u5b66),\u3000\u5ddd\u6ce2\u9756\u5f66, \u5bfa\u5712\u52dd\u5fd7 (\u5b89\u5ddd\u96fb\u6a5f), &#8220;\u30e2\u30b8\u30e5\u30e9\u30fc\u30fb\u30de\u30eb\u30c1\u30ec\u30d9\u30eb\u69cb\u6210\u30c8\u30e9\u30f3\u30b9\u30ec\u30b9STATCOM\u306e\u30b3\u30f3\u30c7\u30f3\u30b5\u306e\u5c0f\u578b\u5316\u306b\u95a2\u3059\u308b\u691c\u8a0e,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u3000\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u6e21\u908a\u76f4\u4e5f, \u5927\u6fa4\u9806, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;\u975e\u63a5\u89e6\u7d66\u96fb\u30b7\u30b9\u30c6\u30e0\u306b\u304a\u3051\u308b\u76f4\u5217\u88dc\u511f\u56de\u8defGCSC\u306e\u9069\u7528\u52b9\u679c\u306e\u691c\u8a0e,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u78ef\u90e8\u9ad8\u7bc4\uff08\u7b51\u6ce2\u5927\u5b66\uff09\uff0c\u5ee3\u5ddd\u8cb4\u4e4b\uff08\u30d1\u30ca\u30bd\u30cb\u30c3\u30af\uff09\uff0c\u4f4f\u5409\u771e\u4e00\u90ce\uff08\u30d1\u30ca\u30bd\u30cb\u30c3\u30af\u30a2\u30d7\u30e9\u30a4\u30a2\u30f3\u30b9\u30bb\u30fc\u30d5\u30c6\u30a3\u30b5\u30fc\u30d3\u30b9\uff09, &#8220;\u99c6\u52d5\u30fb\u5236\u5fa1\u56de\u8def\u3001\u30bb\u30f3\u30b5\u30fc\u306b\u304a\u3051\u308b\u30d1\u30ef\u30fc\u5bc6\u5ea6\u5411\u4e0a\u306b\u5411\u3051\u305f\u8981\u7d20\u6280\u8853\u3068\u305d\u306e\u30ed\u30fc\u30c9\u30de\u30c3\u30d7,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u5c0f\u5cf6\u9818\u592a\uff0c\u4e39\u7fbd\u7ae0\u96c5\uff0c\u5c71\u7530\u9686\u5f18\uff0c\u7b39\u8c37\u5353\u4e5f\uff08\u30c7\u30f3\u30bd\u30fc\uff09\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce \u535a\uff08\u7b51\u6ce2\u5927\u5b66\uff09, &#8220;SiC-MOSFET\u30dc\u30c7\u30a3\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u77ed\u7e2e\u306b\u3088\u308b\u30ea\u30ab\u30d0\u30ea\u640d\u5931\u4f4e\u6e1b\u52b9\u679c,&#8221; \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e743\u670816\u65e5\uff5e3\u670818\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u6700\u65b0\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6\u3068\u3053\u308c\u304b\u3089,&#8221; 2015\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a\u6700\u5148\u7aef\u5b9f\u88c5\u6280\u8853\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0 2015\u5e746\u67083\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u52d5\u5411\u304a\u3088\u3073SiC\u7814\u7a76\u958b\u767a\u306e\u6700\u524d\u7dda,&#8221; \u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u30d5\u30a9\u30fc\u30e9\u30e0\u30d1\u30ef\u30a8\u30ec\u9053\u5834, 2015\u5e7411\u670810\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u69cb\u9020\u3068\u6750\u6599\u30fb\u88fd\u819c\u6280\u8853\u306e\u5c55\u958b,&#8221; \u5316\u5b66\u5de5\u5b66\u4f1aCVD\u53cd\u5fdc\u5206\u79d1\u4f1a,2015\u5e7412\u67081\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u6700\u65b0\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u3068\u4eca\u5f8c\u306e\u8ab2\u984c,&#8221; \u65e5\u672c\u5316\u5b66\u4f1a\u3000\u30b3\u30ed\u30a4\u30c9\u304a\u3088\u3073\u754c\u9762\u79d1\u5b66\u90e8\u4f1a, 2015\u5e7412\u67084\u65e5<\/li>\n<li>\u5ca1\u672c\u5927, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5c0f\u6749\u4eae\u6cbb, \u7c73\u6fa4\u5584\u5e78, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>,\u300cB\u5c0e\u5165\u306b\u3088\u308b\u9ad8\u79fb\u52d5\u5ea64H-SiC MOSFET\u306e\u4f5c\u88fd\u3068\u754c\u9762\u30c8\u30e9\u30c3\u30d7\u8a55\u4fa1\u300d\u30b2\u30fc\u30c8\u30b9\u30bf\u30c3\u30af\u7814\u7a76\u4f1a\u3000\uff0d\u6750\u6599\u30fb\u30d7\u30ed\u30bb\u30b9\u30fb\u8a55\u4fa1\u306e\u7269\u7406\uff0d\u3000\u7b2c20\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, P-15, 2015\/1\/30.<\/li>\n<li><span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>,\u300cSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u524d\u7dda\u300d\uff08\u62db\u5f85\u8b1b\u6f14\uff09, \u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u95a2\u897f\u652f\u90e8\u3000\u5e73\u621026\u5e74\u5ea6\u3000\u7b2c3\u56de\u8b1b\u6f14\u4f1a, \u5948\u826f\u5148\u7aef\u79d1\u5b66\u6280\u8853\u5927\u5b66\u9662\u5927\u5b66, 2015\/2\/27.<\/li>\n<li>\u7560\u5c71\u54f2\u592b, \u9ad8\u5c3e\u548c\u4eba, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>, \u7c73\u6fa4\u5584\u5e78,\u300cSplit-CV\u6cd5\u3068\u30db\u30fc\u30eb\u52b9\u679c\u3092\u7528\u3044\u305f\u4f1d\u5c0e\u5e2f\u8fd1\u508d\u306eSiC MOS\u754c\u9762\u6e96\u4f4d\u306e\u8a55\u4fa1\u300d \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c2\u56de\u8b1b\u6f14\u4f1a, \u5927\u962a\u56fd\u969b\u4ea4\u6d41\u30bb\u30f3\u30bf\u30fc, P-67, pp.180-181, 2015\/11\/9.<\/li>\n<li><span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>,\u300cSiC-MOS\u754c\u9762\u7279\u6027\u6539\u5584\u6280\u8853\u3000\uff5e\u7570\u539f\u5b50\u5c0e\u5165\u306b\u3088\u308b\u754c\u9762\u6539\u8cea\uff5e\u300d\uff08\u62db\u5f85\u8b1b\u6f14\uff09, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c2\u56de\u8b1b\u6f14\u4f1a, \u5927\u962a\u56fd\u969b\u4ea4\u6d41\u30bb\u30f3\u30bf\u30fc, V-1, pp.24-25, 2015\/11\/10.<\/li>\n<li><span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>,\u300cSiC MOSFET\u3068MOS\u754c\u9762\u306e\u6700\u8fd1\u306e\u9032\u5c55\u300d\uff08\u4f9d\u983c\u8b1b\u6f14\uff09, 2015\u5e74\u771f\u7a7a\uff65\u8868\u9762\u79d1\u5b66\u5408\u540c\u8b1b\u6f14\u4f1a, \u3010\u5408\u540c\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0\u300c\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306b\u304a\u3051\u308b\u30ef\u30a4\u30c9\u30ae\u30e3\u30c3\u30d7\u534a\u5c0e\u4f53\u306e\u6700\u524d\u7dda\u300d\u3011, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 1Bp03, p.4, 2015\/12\/01.<\/li>\n<li>\u5ca1\u672c\u5149\u592e, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>, \u5965\u6751\u5143, \u300c\u5b9f\u52d5\u4f5c\u306b\u5247\u3057\u305f\u95be\u5024\u96fb\u5727\u5909\u52d5\u306e\u52d5\u7684\u8a55\u4fa1\u300d, \u7b2c63\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6771\u5de5\u5927\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9, 20p-H101-20, 2016\/3\/20.<\/li>\n<\/ul>\n<h3>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b<\/h3>\n<p>\u30fb\u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201d\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u3092\u652f\u3048\u308bSiC\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306a\u3089\u3073\u306b\u305d\u306e\u5b9f\u88c5\u6280\u8853\u201d\u3000SEAJ\u3000Journal\u30002016\u5e741\u6708\u53f7\u3000\uff08\u793e\uff09\u65e5\u672c\u534a\u5c0e\u4f53\u88fd\u9020\u88c5\u7f6e\u5354\u4f1a<\/p>\n<h3>\u8b1b\u6f14<\/h3>\n<p>\u30fb\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u6700\u65b0\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u3068\u4eca\u5f8c\u306e\u5c55\u958b,&#8221; \u8ca1\u56e3\u6cd5\u4eba\u5ca1\u5c71\u770c\u7523\u696d\u632f\u8208\u8ca1\u56e3\u3000\u304a\u304b\u3084\u307e\u96fb\u6c60\u95a2\u9023\u6280\u8853\u7814\u7a76\u4f1a, 2015\u5e7410\u670820\u65e5<\/p>\n<p>\u30fb\u5ca9\u5ba4\u61b2\u5e78, &#8220;\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411,&#8221; \u65e5\u672c\u30d5\u30a1\u30a4\u30f3\u30bb\u30e9\u30df\u30c3\u30af\u30b9\u5354\u4f1a\u30a4\u30d6\u30cb\u30f3\u30b0\u30bb\u30df\u30ca\u30fc, 2015\u5e749\u67084\u65e5<\/p>\n<ul>\n<li>Noriyuki Iwamuro, \u201dRecent Power Semiconductor Devices Technologies fora Future Smart Society&#8221; Japan-Norway Energy Science Week 2015, 27th May, 2015.<\/li>\n<li>Jon Are Suu, <span style=\"text-decoration: underline;\">Takanori Isobe<\/span>, &#8220;Smart Grid technologies and solutions for Japan and Norway&#8221; Japan-Norway Energy Science Week 2015, 27th May, 2015.<\/li>\n<li>Rene A. Barrera-Cardenas, &#8220;Wide Band Gap Devices for the Next Generation of Electric Transportation&#8221;, Academic Conference UDI 2015, 29th October, 2015.<\/li>\n<\/ul>\n<h3>\u66f8\u7c4d<\/h3>\n<ul>\n<li>\u76e3\u4fee\uff1a \u5ca9\u5ba4\u61b2\u5e78\uff1a\u300c\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u9ad8\u6027\u80fd\u5316\u3068\u305d\u306e\u7523\u696d\u5c55\u958b\u300d\uff0c\u30b7\u30fc\u30a8\u30e0\u30b7\u30fc\u51fa\u7248<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"&nbsp; \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 T. Shoji, A. Soeno, H. Toguchi, S. Aoi, Y. Watanabe, and H. Tadano, \u201cTheoretical analysis of s &#8230;","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1590"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1590"}],"version-history":[{"count":60,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1590\/revisions"}],"predecessor-version":[{"id":3894,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1590\/revisions\/3894"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1590"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}