{"id":205,"date":"2014-07-02T17:28:39","date_gmt":"2014-07-02T08:28:39","guid":{"rendered":"http:\/\/tuhp.primecool.com\/?page_id=205"},"modified":"2025-10-02T19:35:45","modified_gmt":"2025-10-02T10:35:45","slug":"%e7%9f%a2%e9%87%8e-%e8%a3%95%e5%8f%b8","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=205","title":{"rendered":"\u77e2\u91ce \u88d5\u53f8"},"content":{"rendered":"<h2 class=\"main2_title2\">\u77e2\u91ce \u88d5\u53f8\uff08\u3084\u306e \u3072\u308d\u3057\uff09<\/h2>\n<p><strong>\u5c45\u5ba4\uff1a<\/strong>\u5171\u540c\u7814\u7a76\u68dfD\uff08\u65e7\u30d9\u30f3\u30c1\u30e3\u30fc\u30d3\u30b8\u30cd\u30b9\u30e9\u30dc\u30e9\u30c8\u30ea\uff09 VBL401-1<\/p>\n<p><strong>E-mail\uff1a<\/strong>yano.hiroshi.fn@u<img loading=\"lazy\" class=\"alignright wp-image-751\" src=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/3aef451288e33606270fa3a2a4bfa377-e1409904921553-241x300.jpg\" alt=\"\" width=\"150\" height=\"187\" srcset=\"http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/3aef451288e33606270fa3a2a4bfa377-e1409904921553-241x300.jpg 241w, http:\/\/power.bk.tsukuba.ac.jp\/wp-content\/uploads\/2014\/07\/3aef451288e33606270fa3a2a4bfa377-e1409904921553.jpg 657w\" sizes=\"(max-width: 150px) 100vw, 150px\" \/><\/p>\n<p><strong>TEL\uff1a<\/strong>029-853-5781<\/p>\n<p><strong>\u5c02\u9580\u5206\u91ce\uff1a<\/strong>\u534a\u5c0e\u4f53\u3001SiC\u3001MOS\u30c7\u30d0\u30a4\u30b9<\/p>\n<p><strong>\u6240\u5c5e\uff1a<\/strong>\u6570\u7406\u7269\u8cea\u7cfb \u6559\u6388\uff08\u7269\u7406\u5de5\u5b66\u57df\uff09<\/p>\n<p><strong>\u5b66\u4f4d\uff1a<\/strong> \u535a\u58eb\uff08\u5de5\u5b66\uff09<\/p>\n<h3 class=\"main2_title2\">\u7814\u7a76\u6982\u8981<\/h3>\n<ul>\n<li>\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u306b\u9769\u65b0\u3092\u3082\u305f\u3089\u3059\u8d85\u4f4e\u640d\u5931SiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u7814\u7a76<\/li>\n<li>SiC-MOS\u30c7\u30d0\u30a4\u30b9\u306e\u7279\u6027\u5411\u4e0a<\/li>\n<li>SiC\/SiO2\u754c\u9762\u57fa\u790e\u7269\u7406\u306e\u7406\u89e3<\/li>\n<\/ul>\n<h3 class=\"main2_title2\">\u7565\u6b74<\/h3>\n<ul>\n<li>\u611b\u77e5\u770c\u8c4a\u6a4b\u5e02\u751f\u307e\u308c<\/li>\n<li>\u611b\u77e5\u770c\u7acb\u6642\u7fd2\u9928\u9ad8\u7b49\u5b66\u6821\u3000\u5352\u696d<\/li>\n<li>1992\/04-1996\/03\u3000\u4eac\u90fd\u5927\u5b66\u3000\u5b66\u58eb \uff08\u5de5\u5b66\u90e8\u3000\u96fb\u6c17\u5de5\u5b66\u7b2c\u4e8c\u5b66\u79d1\uff09<\/li>\n<li>1996\/04-1998\/03\u3000\u4eac\u90fd\u5927\u5b66\u3000\u4fee\u58eb \uff08\u5de5\u5b66\u7814\u7a76\u79d1\u3000\u96fb\u5b50\u7269\u6027\u5de5\u5b66\u5c02\u653b\uff09<\/li>\n<li>1998\/04-2001\/03\u3000\u4eac\u90fd\u5927\u5b66\u3000\u535a\u58eb \uff08\u5de5\u5b66\u7814\u7a76\u79d1\u3000\u96fb\u5b50\u7269\u6027\u5de5\u5b66\u5c02\u653b\uff09<\/li>\n<li>2000\/01-2001\/03\u3000\u65e5\u672c\u5b66\u8853\u632f\u8208\u4f1a\u3000\u7279\u5225\u7814\u7a76\u54e1\uff08DC2\uff09<\/li>\n<li>2001\/04-2007\/03\u3000\u5948\u826f\u5148\u7aef\u79d1\u5b66\u6280\u8853\u5927\u5b66\u9662\u5927\u5b66\u3000\u7269\u8cea\u5275\u6210\u79d1\u5b66\u7814\u7a76\u79d1\u3000\u52a9\u624b<\/li>\n<li>2007\/04-2013\/11\u3000\u5948\u826f\u5148\u7aef\u79d1\u5b66\u6280\u8853\u5927\u5b66\u9662\u5927\u5b66\u3000\u7269\u8cea\u5275\u6210\u79d1\u5b66\u7814\u7a76\u79d1\u3000\u52a9\u6559<\/li>\n<li>2008\/03-2009\/03\u3000\u30d5\u30e9\u30f3\u30b9\u56fd Ecole Polytechnique, LPICM, Visiting Researcher<\/li>\n<li>2013\/12-2016\/03\u3000\u5948\u826f\u5148\u7aef\u79d1\u5b66\u6280\u8853\u5927\u5b66\u9662\u5927\u5b66\u3000\u7269\u8cea\u5275\u6210\u79d1\u5b66\u7814\u7a76\u79d1\u3000\u5ba2\u54e1\u51c6\u6559\u6388<\/li>\n<li>2013\/12-2025\/05\u3000\u7b51\u6ce2\u5927\u5b66\u3000\u6570\u7406\u7269\u8cea\u7cfb\u3000\u7269\u7406\u5de5\u5b66\u57df\u3000\u51c6\u6559\u6388<\/li>\n<li>2025\/06\uff0d\u73fe\u5728\u3000\u3000\u7b51\u6ce2\u5927\u5b66\u3000\u6570\u7406\u7269\u8cea\u7cfb\u3000\u7269\u7406\u5de5\u5b66\u57df\u3000\u6559\u6388<\/li>\n<\/ul>\n<h3>\u53d7\u8cde\u6b74<\/h3>\n<ul>\n<li>IEEE EDS Kansai Chapter IMFEDK Best Paper Award\uff082010\uff09<\/li>\n<li>\u7b2c18\u56de\u4e95\u4e0a\u7814\u7a76\u5968\u52b1\u8cde\uff082002\uff09<\/li>\n<li>\u7b2c7\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u8b1b\u6f14\u5968\u52b1\u8cde\uff081999\uff09<\/li>\n<\/ul>\n<h3>\u4e3b\u8981\u306a\u8ad6\u6587<\/h3>\n<ol>\n<li class=\"a\">T. Honda and <strong>H. Yano<\/strong>,\u00a0\u201cSimple method to estimate the shallow interface trap density near the conduction band edge of MOSFETs using Hall effect measurements\u201d,\u00a0Jpn. J. Appl. Phys.,\u00a0Vol. 60, No. 1, 016505\/1-6 (2021). https:\/\/doi.org\/10.35848\/1347-4065\/abd369<\/li>\n<li class=\"a\">R. Aiba, K. Matsui, M. Baba, S. Harada, <strong>H. Yano<\/strong>, and N. Iwamuro,\u00a0\u201cDemonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET with Higher Schottky Barrier Height Metal\u201d,\u00a0IEEE Electron Device Lett., Vol. 41, No. 12, pp.1810-1813 (2020). DOI: 10.1109\/LED.2020.3031598<\/li>\n<li class=\"a\">K. Yao, <strong>H. Yano<\/strong>, H. Tadano, and N. Iwamuro,\u00a0\u201cInvestigations of SiC MOSFET Short-circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses\u201d,\u00a0IEEE Trans. Electron Devices, Vol. 67, No. 10, pp.4328-4334 (2020). DOI: 10.1109\/TED.2020.3013192<\/li>\n<li class=\"a\">H. Takeda, M. Sometani, T. Hosoi, T. Shimura, <strong>H. Yano<\/strong> and H. Watanabe,\u00a0\u201cInsight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement\u201d,\u00a0Mater. Sci. Forum, Vol. 1004, pp.620-626 (2020). Online: 2020.7.28,\u00a0DOI: 10.4028\/www.scientific.net\/MSF.1004.620<\/li>\n<li class=\"a\">X. Zhang, T. Matsumoto, U. Sakurai, T. Makino, M. Ogura, S. Yamasaki, M. Sometani, D. Okamoto, <strong>H. Yano<\/strong>, N. Iwamuro, T. Inokuma, and N. Tokuda,\u00a0\u201cEnergy distribution of Al2O3\/diamond interface states characterized by high temperature capacitance-voltage method\u201d,\u00a0Carbon, Vol.168, pp.659-664 (2020). https:\/\/doi.org\/10.1016\/j.carbon.2020.07.019<\/li>\n<li class=\"a\">E. Higa, M. Sometani, H. Hirai, <strong>H. Yano<\/strong>, S. Harada, T. Umeda, \u201cElectrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC\/SiO2 interfaces\u201d,\u00a0Appl. Phys. Lett., Vol. 16, No. 17, 171602\/1-4 (2020). DOI: 10.1063\/5.0002944<\/li>\n<li class=\"a\">H. Nemoto, D. Okamoto, X. Zhang, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada, N. Iwamuro, and <strong>H. Yano<\/strong>,\u00a0\u201cConduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 59, No. 4, 044003\/1-6 (2020). https:\/\/doi.org\/10.35848\/1347-4065\/ab7ddb<\/li>\n<li class=\"a\">T. Ohashi, R. Iijima, and <strong>H. Yano<\/strong>,\u00a0\u201cDominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 59, No. 3, 034003\/1-10 (2020). https:\/\/doi.org\/10.35848\/1347-4065\/ab755a<\/li>\n<li class=\"a\">T. Umeda, T. Kobayashi, M. Sometani, <strong>H. Yano<\/strong>, Y. Matsushita, and S. Harada,\u00a0\u201cCarbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)\/SiO2 interface\u201d,\u00a0Appl. Phys. Lett., Vol. 116, No. 7, 071604\/1-5 (2020).\u00a0DOI: 10.1063\/1.5143555<\/li>\n<li class=\"a\">M. Sometani, T. Hosoi, H. Hirai, T. Hatakeyama, S. Harada, <strong>H. Yano<\/strong>, T. Shimura, H. Watanabe, Y. Yonezawa, and H. Okumura,\u00a0\u201cIdeal phonon-scattering-limited mobility in inversion channel of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations\u201d,\u00a0Appl. Phys. Lett., Vol. 115, No. 13, 132102\/1-5 (2019). DOI: 10.1063\/1.5115304<\/li>\n<li class=\"a\">M. Okawa, R. Aiba, T. Kanamori, Y. Kobayashi, S. Harada, <strong>H. Yano<\/strong>, and N. Iwamuro,\u00a0\u201cFirst Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS\u201d,\u00a0J. Electron Devices Soc., Vol. 7, pp.613-620 (2019).\u00a010.1109\/JEDS.2019.2917563<\/li>\n<li class=\"a\">W. Fu, A. Kobayashi, <strong>H. Yano<\/strong>, A. Ueda, S. Harada, and T. Sakurai,\u00a0\u201cInvestigation of stress at SiO2\/4H-SiC interface induced by thermal oxidation by confocal Raman microscopy\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 58, No. SB, SBBD03\/1-5 (2019). https:\/\/doi.org\/10.7567\/1347-4065\/aafd93<\/li>\n<li class=\"a\">T. Masuda, T. Hatakeyama, S. Harada, and <strong>H. Yano<\/strong>,\u00a0\u201cDemonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2\/SiC (0-33-8) interfaces\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 58, No. SB, SBBD04\/1-5 (2019). https:\/\/doi.org\/10.7567\/1347-4065\/aafb55<\/li>\n<li class=\"a\">Y. Kagoyama, M. Okamoto, T. Yamasaki, N. Tajima, J. Nara, T. Ohno, <strong>H. Yano<\/strong>, S. Harada, and T. Umeda,\u00a0\u201cAnomalous carbon clusters in 4H-SiC\/SiO2 interfaces\u201d,\u00a0J. Appl. Phys., Vol. 125, No. 6, 065302\/1-8 (2019). https:\/\/doi.org\/10.1063\/1.5066356<\/li>\n<li class=\"a\">T. Hatakeyama, T. Masuda, M. Sometani, S. Harada, D. Okamoto, <strong>H. Yano<\/strong>, Y. Yonezawa, and H. Okumura,\u00a0\u201cImpact of crystal faces of 4H-SiC in SiO2\/4H-SiC structures on interface trap densities and mobilities\u201d,\u00a0Appl. Phys. Express, Vol. 12, No. 2, pp.201003\/1-5 (2019). https:\/\/doi.org\/10.7567\/1882-0786\/aaf283<\/li>\n<li class=\"a\">E. Fujita, M. Sometani, T. Hatakeyama, S. Harada, <strong>H. Yano<\/strong>, T. Hosoi, T. Shimura, and H. Watanabe,\u00a0\u201cInsight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements\u201d,\u00a0AIP Adv., Vol. 8, No. 8, 085305\/1-6 (2018).\u00a0DOI: 10.1063\/1.5034048<\/li>\n<li class=\"a\">M. Namai, J. An, <strong>H. Yano<\/strong>, and N. Iwamuro,\u00a0\u201cInvestigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 57, No. 7, 074102\/1-10 (2018).\u00a0DOI: 10.7567\/JJAP.57.074102<\/li>\n<li class=\"a\">X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and <strong>H. Yano<\/strong>,\u00a0\u201cImpact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 57, No. 6S3, 06KA04\/1-5 (2018). DOI: 10.7567\/JJAP.57.06KA04<\/li>\n<li class=\"a\">Y. Karamoto, X. Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and <strong>H. Yano<\/strong>,\u00a0\u201cAnalysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 57, No. 6S3, 06KA06\/1-6 (2018). DOI: 10.7567\/JJAP.57.06KA06<\/li>\n<li class=\"a\">M. Hayashi, M. Sometani, T. Hatakeyama, <strong>H. Yano<\/strong>, and S. Harada,\u00a0\u201cHole Trapping in SiC-MOS Devices Evaluated by Fast-Capacitance-Voltage Method\u201d, Jpn. J. Appl. Phys., Vol. 57, No. 4S, 04FR15\/1-4 (2018). DOI: 10.7567\/JJAP.57.04FR15<\/li>\n<li class=\"a\">M. Sometani, M. Okamoto, T. Hatakeyama, Y. Iwahashi, M. Hayashi, D. Okamoto, <strong>H. Yano<\/strong>, S. Harada, Y. Yonezawa, and H. Okumura,\u00a0\u201cAccurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices under Various Gate Bias Stress Conditions\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 57, No. 4S, 04FA07\/1-7 (2018). DOI: 10.7567\/JJAP.57.04FR15<\/li>\n<li class=\"a\">J. An, M. Namai, D. Okamoto, <strong>H. Yano<\/strong>, H. Tadano, and N. Iwamuro,\u00a0\u201cInvestigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test\u201d,\u00a0Electronics and Communications in Japan, Vol. 101, No. 1, pp.24-31 (2018). DOI: 10.1002\/ecj.12018<\/li>\n<li class=\"a\">J. An, M. Namai, <strong>H. Yano<\/strong>, and N. Iwamuro,\u00a0\u201cInvestigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications\u201d,\u00a0IEEE Trans. Electron Devices, Vol. 64, No. 10, pp.4219-4225 (2017). DOI: 10.1109\/TED.2017.2742542<\/li>\n<li class=\"a\">\u5ca1\u672c\u5927, <strong>\u77e2\u91ce\u88d5\u53f8<\/strong>,\u00a0\u300c\u7570\u539f\u5b50\u5c0e\u5165\u306b\u3088\u308bSiC MOSFET\u306e\u7279\u6027\u6539\u5584\u300d\u5fdc\u7528\u7269\u7406, Vol. 86, No. 9, pp.781-785 (2017).<\/li>\n<li class=\"a\">X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and <span style=\"text-decoration: underline;\"><strong>H. Yano<\/strong><\/span>, \u201cCharacterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model\u201d,\u00a0Appl. Phys. Express, Vol. 10, No. 6, pp.064101\/1-4 (2017). DOI: 10.7567\/APEX.10.064101<\/li>\n<li class=\"a\">M. Okamoto, M. Sometani, S. Harada, <strong>H. Yano<\/strong>, and H. Okumura, \u201cDynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET\u201d,\u00a0Mater. Sci. Forum, Vol. 897, pp.549-552 (2017). Online: 2017.5.15, DOI: 10.4028\/www.scientific.net\/MSF.897.549<\/li>\n<li class=\"a\">T. Hatakeyama, Y. Kiuchi, M. Sometani, S. Harada, D. Okamoto, <strong>H. Yano<\/strong>, Y. Yonezawa, and H. Okumura,\u00a0\u201cCharacterization of Traps at Nitrided SiO2\/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements\u201d,\u00a0Appl. Phys. Express,Vol. 10, No. 4, pp. 046601\/1-4 (2017). DOI: 10.7567\/APEX.10.046601<\/li>\n<li class=\"a\">D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and <strong>H. Yano<\/strong>, \u201cEffect of boron incorporation on slow interface traps in SiO2\/4H-SiC structures\u201d, Appl. Phys. A, Vol. 123, Article 133 (6pages), (2017). DOI: 10.1007\/s00339-016-0724-1<\/li>\n<li class=\"a\">\u5b89\u4fca\u5091, \u751f\u4e95\u6b63\u8f1d, \u5ca1\u672c\u5927, <strong>\u77e2\u91ce\u88d5\u53f8<\/strong>, \u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78, \u300cUnclampled Inductive Switching\u8a66\u9a13\u306b\u3088\u308b4H-SiC MOSFET\u306e\u6700\u5927\u63a5\u5408\u6e29\u5ea6\u306e\u8a55\u4fa1\u300d, \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cC, Vol. 137, No.2, pp.216-221 (2017). DOI: 10.1541\/ieejeiss.137.216<\/li>\n<li class=\"a\">T. Murakami, T. Masuda, S. Inoue, <strong>H. Yano<\/strong>, N. Iwamuro, and T. Shimoda, \u201cPhotoelectron Yield Spectroscopy and Inverse Photoemission Spectroscopy Evaluations of P-type Amorphous Silicon Carbide Films Prepared using Liquid Materials\u201d, AIP Advances, Vol. 6, pp.055021\/1-6 (2016). DOI: 10.1063\/1.4952592<\/li>\n<li class=\"a\">A. Henry, <strong>H. Yano<\/strong>, and T. Hatayama,\u00a0\u201cPhotoluminescence of 10H-SiC\u201d,\u00a0Mater. Sci. Forum, Vol. 858, pp.269-273 (2016). Online 2016.5.24,\u00a0DOI: 10.4028\/www.scientific.net\/MSF.858.269<\/li>\n<li class=\"a\">Y. Kiuchi, H. Kitai, H. Shiomi, M. Tsujimura, D. Nakata, S. Harada, Y. Yonezawa, K. Fukuda, K. Sakamoto, K. Yamasaki, <strong>H. Yano<\/strong>, and H. Okumura, \u201cCharacterization of Themally Oxidized SiO2\/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-ray Photoelectron Spectroscopy (XPS), and High-resolution Rutherford Backscattering Spectroscopy (HR-RBS)\u201d, Mater. Sci. Forum, Vol. 858, pp.449-452 (2016). Online 2016.5.24, DOI: 10.4028\/www.scientific.net\/MSF.858.449<\/li>\n<li class=\"a\">T. Hatakeyama, K. Takao, Y. Yonezawa, and <strong>H. Yano<\/strong>, \u201cPragmatic Approach to the Characterization of SiC\/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements\u201d, Mater. Sci. Forum, Vol. 858, pp.477-480 (2016). Online 2016.5.24, DOI: 10.4028\/www.scientific.net\/MSF.858.477<\/li>\n<li class=\"a\">T. Hatayama, A. Henry, <strong>H. Yano<\/strong>, and T. Fuyuki, \u201cLow-Temperature Photoluminescence of 8H-SiC Homoepitaxial Layer\u201d, Jpn. J. Appl. Phys., Vol.55, No.2, pp.020303\/1-4 (2016). DOI: 10.7567\/JJAP.55.020303<\/li>\n<li class=\"a\"><strong>H. Yano<\/strong>, N. Kanafuji, A. Osawa, T. Hatayama, and T. Fuyuki \u201cThreshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-Doped and Nitrided Gate Oxides\u201d IEEE Trans. Electron Devices, Vol. 62, No.2, pp.324-332 (2015) DOI: 10.1109\/TED.2014.2358260<\/li>\n<li class=\"a\">D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and <strong>H. Yano<\/strong> \u201cImproved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation\u201d IEEE Electron Device Lett., Vol.35, No.12, pp.1176-1178 (2014). DOI: 10.1109\/LED.2014.2362768<\/li>\n<li class=\"a\"><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>, \u7551\u5c71\u667a\u4eae, \u51ac\u6728\u9686\u300c\u30b2\u30fc\u30c8\u9178\u5316\u819c\u3078\u306e\u30ea\u30f3\u5c0e\u5165\u306b\u3088\u308bSiC-MOS\u754c\u9762\u6b20\u9665\u306e\u4f4e\u6e1b\u3068MOSFET\u306e\u9ad8\u6027\u80fd\u5316\u300d\u8868\u9762\u79d1\u5b66, Vol.35, No.2, pp.90-95 (2014). DOI: 10.1380\/jsssj.35.90<\/li>\n<li class=\"a\">A. Osawa, <strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cCharacterization of POCl<sub>3<\/sub>&#8211; and NO-annealed 4H-SiC MOSFETs by Charge Pumping Technique\u201d Mater. Sci. Forum, Vols.740-742, pp.541-544 (2013). DOI: 10.4028\/www.scientific.net\/MSF.740-742.541<\/li>\n<li class=\"a\">T. Akagi, <strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cEffect of Interface Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices\u201d Mater. Sci. Forum, Vols.740-742, pp.695-698 (2013). DOI: 10.4028\/www.scientific.net\/MSF.740-742.695<\/li>\n<li class=\"a\"><strong>H. Yano<\/strong>, T. Araoka, T. Hatayama, and T. Fuyuki \u201cImproved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl<sub>3<\/sub> annealing\u201d Mater. Sci. Forum, Vols.740-742, pp.727-732 (2013). DOI: 10.4028\/www.scientific.net\/MSF.740-742.727<\/li>\n<li class=\"a\">Y. Ueoka, K. Shingu, <strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cOrigin of Anisotropic Electrical Properties of 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistors on Off-axis Substrates\u201d Jpn. J. Appl. Phys., Vol.51, No.11, pp.110201\/1-3 (2012). DOI: 10.1143\/JJAP.51.110201<\/li>\n<li class=\"a\"><strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cPOCl<sub>3<\/sub> Annealing as a New Method for Improving 4H-SiC MOS Device Performance\u201d ECS Trans., Vol.50, No.3, pp.257-265 (2012). DOI: 10.1149\/05003.0257ecst<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cDevelopment of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide\u201d Mater. Sci. Forum, Vols.717-720, pp.733-738 (2012).<\/li>\n<li class=\"a\">R. Morishita, <strong>H. Yano<\/strong>, D. Okamoto, T. Hatayama, and T. Fuyuki \u201cEffect of POCl<sub>3<\/sub> annealing on Reliability of Thermal Oxides Grown on 4H-SiC\u201d Mater. Sci. Forum, Vols.717-720, pp.739-742 (2012).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, S. Kotake, T. Hatayama, and T. Fuyuki \u201cShallow Traps at P-Doped SiO<sub>2<\/sub>\/4H-SiC(0001) Interface\u201d Mater. Sci. Forum, Vols.679-680, pp.338-341 (2011).<\/li>\n<li class=\"a\">S. Kotake, <strong>H. Yano<\/strong>, D. Okamoto, T. Hatayama, and T. Fuyuki \u201cImproved MOS Interface Properties of C-Face 4H-SiC by POCl<sub>3<\/sub> Annealing\u201d Mater. Sci. Forum, Vols.679-680, pp.425-428 (2011).<\/li>\n<li class=\"a\"><strong>H. Yano<\/strong>, Y. Oshiro, D. Okamoto, T. Hatayama, and T. Fuyuki \u201cInstability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants\u201d Mater. Sci. Forum, Vols.679-680, pp.603-606 (2011).<\/li>\n<li class=\"a\">Y. Ueoka, <strong>H. Yano<\/strong>, D. Okamoto, T. Hatayama, and T. Fuyuki \u201cExtraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates\u201d Mater. Sci. Forum, Vols.679-680, pp.666-669 (2011).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, K. Hirata, T. Hatayama, and T. Fuyuki \u201cImproved Inversion Channel Mobility in 4H-SiC MOSFETs on Si face Utilizing Phosphorus-Doped Gate Oxide\u201d IEEE Electron Device Lett., Vol.31, No.7, pp.710-712 (2010).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cRemoval of Near-Interface Traps at SiO<sub>2<\/sub>\/4H-SiC (0001) Interfaces by Phosphorus Incorporation\u201d Appl. Phys. Lett., Vol.96, No.20, 203508\/1-3 (2010).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, S. Kotake, K. Hirata, T. Hatayama, and T. Fuyuki \u201cImproved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique\u201d Mater. Res. Soc. Symp. Proc., Vol.1246, pp.1246-B06-06\/1-5 (2010).<\/li>\n<li class=\"a\">Y. Iwasaki, <strong>H. Yano<\/strong>, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cNH<sub>3<\/sub> Plasma Pretreatment of 4H-SiC(000-1) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices\u201d Appl. Phys. Exp., Vol.3, No.2, pp.026201\/1-3 (2010).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki \u201cSystematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates\u201d Mater. Sci. Forum, Vols.645-648, pp.495-498 (2010).<\/li>\n<li class=\"a\">Y. Iwasaki, <strong>H. Yano<\/strong>, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cSignificant Decrease of the Interface State Density by NH<sub>3<\/sub> Plasma Pretreatment at 4H-SiC (000-1) Surface and Its Bond Configuration\u201d Mater. Sci. Forum, Vols.645-648, pp.503-506 (2010).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, Y. Oshiro, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cInvestigation of Oxide Films Prepared by Direct Oxidation of C-face 4H-SiC in Nitric Oxide\u201d Mater. Sci. Forum, Vols.645-648, pp.515-518 (2010).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, Y. Oshiro, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cInvestigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures\u201d Appl. Phys. Exp., Vol.2, No.2, pp.021201\/1-3 (2009).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cCriteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs\u201d Mater. Sci. Forum, Vols.600-603, pp.747-750 (2009).<\/li>\n<li class=\"a\">D. Okamoto, <strong>H. Yano<\/strong>, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cAnalysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs\u201d IEEE Trans. Electron Devices, Vol.55, No.8, pp.2013-2020 (2008).<\/li>\n<li class=\"a\"><strong>H. Yano<\/strong>, H. Nakao, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cIncreased Channel Mobility in 4H-SiC UMOSFETs Using On-axis Substrates\u201d Mater. Sci. Forum, Vols.556-557, pp.807-810 (2007).<\/li>\n<li class=\"a\">D. Takeda, <strong>H. Yano<\/strong>, T. Hatayama, Y. Uraoka, and T. Fuyuki \u201cModification of SiO<sub>2<\/sub>\/4H-SiC Interface Properties by High-Pressure H<sub>2<\/sub>O Vapor Annealing\u201d Mater. Sci. Forum, Vols.556-557, pp.663-666 (2007).<\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/scitation.aip.org\/getabs\/servlet\/GetabsServlet?prog=normal&amp;id=APPLAB000090000004042102000001&amp;idtype=cvips&amp;gifs=yes\">H. Yano, H. Nakao, H. Mikami, T. Hatayama, Y. Uraoka, and T. Fuyuki &#8220;Anomalously Anisotropic Channel Mobility on Trench Sidewalls in 4H-SiC Trench-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 8-degree Off Substrates&#8221; Applied Physics Letters, 90 (2007) 042102.<\/a><\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/jjap.ipap.jp\/link?JJAP\/42\/L575\/\">Y. Maeyama, H. Yano, Y. Furumoto, T. Hatayama, Y. Uraoka, and T. Fuyuki &#8220;Improvement of SiO2\/SiC Interface Properties by Nitrogen Radical Irradiation&#8221; Japanese Journal of Applied Physics, 42 (2003) L575.<\/a><\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/scitation.aip.org\/getabs\/servlet\/GetabsServlet?prog=normal&amp;id=APPLAB000081000025004772000001&amp;idtype=cvips&amp;gifs=yes\">H. Yano, T. Kimoto, H. Matsunami, and H. Shiomi &#8220;Interface Properties in Metal-Oxide-Semiconductor Structures on n-type 4H-SiC (03-38)&#8221; Applied Physics Letters, 81 (2002) 4772.<\/a><\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/scitation.aip.org\/getabs\/servlet\/GetabsServlet?prog=normal&amp;id=APPLAB000081000002000301000001&amp;idtype=cvips&amp;gifs=yes\">H. Yano, T. Kimoto, and H. Matsunami &#8220;Shallow States at SiO2\/4H-SiC Interface on (11-20) and (0001) Faces&#8221; Applied Physics Letters, 81 (2002) 301.<\/a><\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/scitation.aip.org\/getabs\/servlet\/GetabsServlet?prog=normal&amp;id=APPLAB000078000003000374000001&amp;idtype=cvips&amp;gifs=yes\">H. Yano, T. Hirao, T. Kimoto, and H. Matsunami &#8220;A Cause for Highly Improved Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors on the (11-20) Face&#8221; Applied Physics Letters, 78 (2001) 374.<\/a><\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/jjap.ipap.jp\/link?JJAP\/39\/2008\/\">H. Yano, T. Hirao, T. Kimoto, and H. Matsunami &#8220;High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors&#8221; Japanese Journal of Applied Physics, 39 (2000) 2008.<\/a><\/li>\n<li class=\"a\"><a style=\"color: #4169e1;\" href=\"http:\/\/ieeexplore.ieee.org\/xpls\/abs_all.jsp?arnumber=806101\">H. Yano, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara &#8220;High Channel Mobility in Inversion Layers of 4H-SiC MOSFET&#8217;s by Utilizing (11-20) Face&#8221; IEEE Electron Device Letters, 20 (1999) 611.<\/a><\/li>\n<li class=\"b\"><a style=\"color: #4169e1;\" href=\"http:\/\/ieeexplore.ieee.org\/xpl\/freeabs_all.jsp?arnumber=748869\">H. Yano, F. Katafuchi, T. Kimoto, and H. Matsunami &#8220;Effects of Wet Oxidation\/Anneal on Interface Properties of Thermally Oxidized SiO2\/SiC MOS System and MOSFET&#8217;s&#8221; IEEE Transaction on Electron Devices, 46 (1999) 504.<\/a><\/li>\n<\/ol>\n<p>\uff08\u305d\u306e\u4ed6\uff09<\/p>\n<h3>\u4e3b\u306a\u56fd\u969b\u5b66\u4f1a\u767a\u8868<\/h3>\n<ol>\n<li style=\"list-style-type: none;\">\n<ol>\n<li><strong>H. Yano<\/strong> <strong>(Invited) <\/strong>\u201cThreshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-doped and Nitrided Gate Oxides\u201d (Oral) 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki (Greece), Th1.01, 2016\/9\/29.<\/li>\n<li>T. Hatakeyama, K. Takao, Y. Yonezawa, and <strong>H. Yano<\/strong> \u201cPragmatic Approach to the Characterization of Traps at SiC\/SiO2 Interfaces near the Conduction Band with Split C-V and Hall Measurements\u201d (Oral, \u77e2\u91ce\u767a\u8868) The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Giardini Naxos (Italy), Fr-1B-4, 2015\/10\/9.<\/li>\n<li><strong>H. Yano<\/strong>, A. Osawa, T. Hatayama, and T. Fuyuki \u201cComparative Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl<sub>3<\/sub>&#8211; and NO- Annealed Gate Oxides\u201d (Oral) The International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), Miyazaki (Japan), We-3A-3, 2013\/10\/2.<\/li>\n<li><strong>H. Yano<\/strong>, T. Hatayama, and T. Fuyuki <strong>(Invited)<\/strong> \u201cPOCl<sub>3<\/sub> Annealing as a New Method for Improving 4H-SiC MOS Device Performance\u201d (Oral) PRiME 2012 (Pacific Rim Meeting on Electrochemical and Solid-State Science), Honolulu (HI, USA), #2548, 2012\/10\/10.<\/li>\n<li><strong>H. Yano<\/strong>, T. Araoka, T. Hatayama, and T. Fuyuki <strong>(Invited)<\/strong> \u201cImproved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl<sub>3<\/sub> Annealing\u201d (Oral) The 9<sup>th<\/sup> European Conference on Silicon Carbide and Related Materials (ECSCRM2012), Saint-Petersburg (Russia), We8-1, 2012\/9\/5.<\/li>\n<li><strong>H. Yano<\/strong>, Y. Oshiro, D. Okamoto, T. Hatayama, and T. Fuyuki \u201cInstability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constant\u201d (Oral) 8<sup>th<\/sup> European Conference on Silicon Carbide and Related Materials (ECSCRM2010), Oslo (Norway), Thu3-5, 2010\/09\/02.<\/li>\n<li><strong>H. Yano<\/strong> <strong>(Invited) <\/strong>\u201cSiC MOSFETs and Their Interfaces\u201d (Oral) 33<sup>rd<\/sup> IEEE Semiconductor Interface Specialists Conference (SISC2002), San Diego (CA, USA), 5.1, 2002\/12\/06.<\/li>\n<li><strong>H. Yano<\/strong>, T. Hatayama, Y. Uraoka, T. Fuyuki, T. Kimoto, and H. Matsunami <strong>(Invited) <\/strong>\u201cSiO<sub>2<\/sub>\/SiC Interface Properties on Various Surface Orientations\u201d (Oral) 2002 MRS Fall Meeting, Boston (MA, USA), K4.5, 2002\/12\/03.<\/li>\n<\/ol>\n<\/li>\n<\/ol>\n<h3>\u4e3b\u306a\u56fd\u5185\u5b66\u4f1a\u767a\u8868<\/h3>\n<ol>\n<li style=\"list-style-type: none;\">\n<ol>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>\u300cSiC\u9178\u5316\u819c\u3078\u306e\u7a92\u7d20\u3001\u30ea\u30f3\u3001\u30db\u30a6\u7d20\u6dfb\u52a0\u306b\u3088\u308b\u754c\u9762\u7279\u6027\u6539\u5584\u52b9\u679c\u300d<strong>\uff08\u62db\u5f85\u8b1b\u6f14\uff09<\/strong>\u00a0\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u7b2c2\u56de\u500b\u5225\u8a0e\u8ad6\u4f1a, ABC\u8cb8\u4f1a\u8b70\u5ba4, 2016\/8\/1.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>\u300cSiC MOSFET\u3068MOS\u754c\u9762\u306e\u6700\u8fd1\u306e\u9032\u5c55\u300d<strong>\uff08\u4f9d\u983c\u8b1b\u6f14\uff09<\/strong> 2015\u5e74\u771f\u7a7a\uff65\u8868\u9762\u79d1\u5b66\u5408\u540c\u8b1b\u6f14\u4f1a, \u3010\u5408\u540c\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0\u300c\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306b\u304a\u3051\u308b\u30ef\u30a4\u30c9\u30ae\u30e3\u30c3\u30d7\u534a\u5c0e\u4f53\u306e\u6700\u524d\u7dda\u300d\u3011, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 1Bp03, p.4, 2015\/12\/01.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>\u300cSiC-MOS\u754c\u9762\u7279\u6027\u6539\u5584\u6280\u8853\u3000\uff5e\u7570\u539f\u5b50\u5c0e\u5165\u306b\u3088\u308b\u754c\u9762\u6539\u8cea\uff5e\u300d<strong>\uff08\u62db\u5f85\u8b1b\u6f14\uff09<\/strong>\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u7b2c2\u56de\u8b1b\u6f14\u4f1a, \u5927\u962a\u56fd\u969b\u4ea4\u6d41\u30bb\u30f3\u30bf\u30fc, V-1, pp.24-25, 2015\/11\/10.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>\u300cSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u524d\u7dda\u300d<strong>\uff08\u4f9d\u983c\u8b1b\u6f14\uff09<\/strong>\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u95a2\u897f\u652f\u90e8\u3000\u5e73\u621026\u5e74\u5ea6\u3000\u7b2c3\u56de\u8b1b\u6f14\u4f1a, \u5948\u826f\u5148\u7aef\u79d1\u5b66\u6280\u8853\u5927\u5b66\u9662\u5927\u5b66, 2015\/2\/27.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>\u300cSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u754c\u9762\u5236\u5fa1\u306e\u7406\u89e3\u3068\u8ab2\u984c\u300d<strong>\uff08\u4f9d\u983c\u8b1b\u6f14\uff09<\/strong>\u5fdc\u7528\u96fb\u5b50\u7269\u6027\u5206\u79d1\u4f1a\u7814\u7a76\u4f8b\u4f1a, \u540d\u53e4\u5c4b\u5927\u5b66, (5), 2014\/06\/05.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>, \u7551\u5c71\u667a\u4eae, \u51ac\u6728\u9686\u300c\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u306b\u3088\u308bSiC-MOS\u754c\u9762\u7279\u6027\u306e\u8a55\u4fa1\u300d<strong>\uff08\u4f9d\u983c\u8b1b\u6f14\uff09<\/strong> SiC\u53ca\u3073\u95a2\u9023\u534a\u5c0e\u4f53\u7814\u7a76\u3000\u7b2c22\u56de\u8b1b\u6f14\u4f1a, \u57fc\u7389\u4f1a\u9928, IX-4, 2013\/12\/10.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8<\/strong>, \u7551\u5c71\u667a\u4eae, \u51ac\u6728\u9686<strong>\uff08\u4f9d\u983c\u8b1b\u6f14\uff09<\/strong>\u300cPOCl<sub>3<\/sub>\u30a2\u30cb\u30fc\u30eb\u306b\u3088\u308bSiC-MOS\u30c7\u30d0\u30a4\u30b9\u306e\u9ad8\u6027\u80fd\u5316\u300d\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u3000\u30b7\u30ea\u30b3\u30f3\u6750\u6599\u30fb\u30c7\u30d0\u30a4\u30b9\u7814\u7a76\u4f1a\u3001SDM2013-58 \u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u3000\u30b7\u30ea\u30b3\u30f3\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u5206\u79d1\u4f1a\u3000\u7b2c161\u56de\u7814\u7a76\u96c6\u4f1a\uff08\u5171\u50ac\uff09,\u3000\u6a5f\u68b0\u632f\u8208\u4f1a\u9928, 2013\/6\/18.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8\uff08\u62db\u5f85\u8b1b\u6f14\uff09<\/strong>\u300cSiC-MOS\u30c7\u30d0\u30a4\u30b9\u306e\u754c\u9762\u6b20\u9665\u4f4e\u6e1b\u6280\u8853\u300d SEMI FORUM JAPAN 2013\u3001\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30bb\u30df\u30ca\u30fc(2) \uff0d\u5316\u5408\u7269\u534a\u5c0e\u4f53\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6\u3068\u4eca\u5f8c\u306e\u5c55\u671b\uff0d, \u30b0\u30e9\u30f3\u30ad\u30e5\u30fc\u30d6\u5927\u962a, 2013\/5\/22.<\/li>\n<li><strong>\u77e2\u91ce\u88d5\u53f8\uff08\u62db\u5f85\u8b1b\u6f14\uff09<\/strong>\u300cSiO<sub>2<\/sub>\/SiC\u754c\u9762\u3078\u306e\u30ea\u30f3\u5c0e\u5165\u306b\u3088\u308b\u9ad8\u54c1\u8cea\u754c\u9762\u306e\u5f62\u6210\u300d\u30b2\u30fc\u30c8\u30b9\u30bf\u30c3\u30af\u7814\u7a76\u4f1a\u3000\uff0d\u6750\u6599\u30fb\u30d7\u30ed\u30bb\u30b9\u30fb\u8a55\u4fa1\u306e\u7269\u7406\uff0d\u3000\u7b2c18\u56de\u7814\u7a76\u4f1a, \u30cb\u30e5\u30fc\u30a6\u30a7\u30eb\u30b7\u30c6\u30a3\u6e6f\u6cb3\u539f, 2013\/1\/26. (\u4e88\u7a3f\u96c6p.59-62)<\/li>\n<\/ol>\n<\/li>\n<\/ol>\n<h3>\u8457\u66f8<\/h3>\n<ol>\n<li>\u300c\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u9ad8\u6027\u80fd\u5316\u3068\u305d\u306e\u7523\u696d\u5c55\u958b\u300d\u3000\u5ca9\u5ba4\u61b2\u5e78\u3000\u76e3\u4fee\u3000\u30b7\u30fc\u30a8\u30e0\u30b7\u30fc\u51fa\u7248(2015). (\u5206\u62c5\uff1a\u7b2c15\u7ae0\u30b2\u30fc\u30c8\u9178\u5316\u819c\u3000pp.136-145) 2015.6.10\u767a\u884c<\/li>\n<li>\u300c\u30dd\u30b9\u30c8\u30b7\u30ea\u30b3\u30f3\u534a\u5c0e\u4f53\u3000\uff0d\u30ca\u30ce\u6210\u819c\u30c0\u30a4\u30ca\u30df\u30af\u30b9\u3068\u57fa\u677f\u30fb\u754c\u9762\u52b9\u679c\uff0d\u300d\u3000\u30a8\u30cc\u30fb\u30c6\u30a3\u30fc\u30fb\u30a8\u30b9(2013). \uff08\u5206\u62c5\uff1a\u7b2c2\u7de8\u3001\u7b2c1\u7ae0\u3001\u7b2c4\u7bc0 SiC\u30c7\u30d0\u30a4\u30b9\u30d7\u30ed\u30bb\u30b9\u306b\u304a\u3051\u308b\u65b0\u898f\u8868\u9762\u30fb\u754c\u9762\u6539\u8cea\u6280\u8853\u3000pp.94-104\uff09 2013.6.11\u767a\u884c<\/li>\n<li>\u300cSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u958b\u767a\u3068\u6700\u65b0\u52d5\u5411\u3000\uff0d\u666e\u53ca\u306b\u5411\u3051\u305f\u30c7\u30d0\u30a4\u30b9\u30d7\u30ed\u30bb\u30b9\u3068\u5b9f\u88c5\u6280\u8853\uff0d\u300d\u3000\u5ca9\u5ba4\u61b2\u5e78\u76e3\u4fee S&amp;T\u51fa\u7248(2012) (\u5206\u62c5\uff1a\u7b2c2\u7ae0\uff0d\u7b2c4\u7bc0 MOS\u754c\u9762\u6b20\u9665\u306e\u4f4e\u6e1b\u6280\u8853\u3068\u9ad8\u54c1\u8cea\u5316\u3000pp.42-52) 2012.10.30\u767a\u884c<\/li>\n<li>\u300c\u534a\u5c0e\u4f53SiC\u6280\u8853\u3068\u5fdc\u7528\u3000\u7b2c2\u7248\u300d\u3000\u677e\u6ce2\u5f18\u4e4b\u30fb\u5927\u8c37\u6607\u30fb\u6728\u672c\u6052\u66a2\u30fb\u4e2d\u6751\u5b5d\u3000\u7de8\u8457\u3000\u65e5\u520a\u5de5\u696d\u65b0\u805e\u793e(2011) (\u5206\u62c5:7.3.1 MOS\u754c\u9762\u57fa\u790e\u3068\u754c\u9762\u7269\u6027\u8a55\u4fa1\u6cd5 pp.264-274) \u30002011.9.30\u767a\u884c<\/li>\n<li>\u300c\u534a\u5c0e\u4f53SiC\u6280\u8853\u3068\u5fdc\u7528\u300d\u3000\u677e\u6ce2\u5f18\u4e4b\u3000\u7de8\u8457\u3000\u65e5\u520a\u5de5\u696d\u65b0\u805e\u793e(2003) (\u5206\u62c5:6.2 MOS\u754c\u9762\u7279\u6027pp.128-135)\u30002003.3.31\u767a\u884c<\/li>\n<\/ol>\n<h3>\u30a8\u30c7\u30a3\u30bf\u30fc<\/h3>\n<ol>\n<li>\u201cSilicon Carbide and Related Materials 2019\u201d, Volume 1004 of Materials Science Forum, Edited by <strong>Hiroshi Yano<\/strong>, Takeshi Ohshima, Kazuma Eto, Shinsuke Harada, Takeshi Mitani, and Yasunori Tanaka, Trans Tech Publications, Switzerland, 2020.ISSN print 0255-5476, ISSN cd 1662-9760, ISSN web 1662-9752<\/li>\n<\/ol>\n","protected":false},"excerpt":{"rendered":"\u77e2\u91ce \u88d5\u53f8\uff08\u3084\u306e \u3072\u308d\u3057\uff09 \u5c45\u5ba4\uff1a\u5171\u540c\u7814\u7a76\u68dfD\uff08\u65e7\u30d9\u30f3\u30c1\u30e3\u30fc\u30d3\u30b8\u30cd\u30b9\u30e9\u30dc\u30e9\u30c8\u30ea\uff09 VBL401-1 E-mail\uff1ayano.hiroshi.fn@u TEL\uff1a029-853-5781 \u5c02\u9580\u5206\u91ce\uff1a\u534a\u5c0e\u4f53\u3001SiC\u3001MOS\u30c7\u30d0 &#8230;","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/205"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=205"}],"version-history":[{"count":43,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/205\/revisions"}],"predecessor-version":[{"id":7152,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/205\/revisions\/7152"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=205"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}