{"id":2373,"date":"2016-05-27T15:49:29","date_gmt":"2016-05-27T06:49:29","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=2373"},"modified":"2018-05-22T20:09:44","modified_gmt":"2018-05-22T11:09:44","slug":"2016%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=2373","title":{"rendered":"2016\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<p>&nbsp;<\/p>\n<h3>\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587<\/h3>\n<ul>\n<li>Y. Kiuchi, H. Kitai, H. Shiomi, M. Tsujimura, D. Nakata, S. Harada, Y. Yonezawa, K. Fukuda, K. Sakamoto, K. Yamasaki, <span style=\"text-decoration: underline;\">H. Yano<\/span>, and H. Okumura, \u201cCharacterization of Themally Oxidized SiO2\/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-ray Photoelectron Spectroscopy (XPS), and High-resolution Rutherford Backscattering Spectroscopy (HR-RBS)\u201d, Mater. Sci. Forum, Vol. 858, pp.449-452 (2016).\u00a0 DOI: 10.4028\/www.scientific.net\/MSF.858.449<\/li>\n<li>T. Hatakeyama, K. Takao, Y. Yonezawa, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, \u201cPragmatic Approach to the Characterization of SiC\/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements\u201d, Mater. Sci. Forum, Vol. 858, pp.477-480 (2016).DOI: 10.4028\/www.scientific.net\/MSF.858.477<\/li>\n<li>T. Murakami, T. Masuda, S. Inoue, <span style=\"text-decoration: underline;\">H. Yano<\/span>, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and T. Shimoda, &#8220;Photoelectron yield spectroscopy and inverse photoemissin spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials,&#8221; <em>AIP Advances<\/em>, vol.6, 055021 (2016) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.4952592\">DOI:10.1063\/1.4952592<\/a><\/li>\n<li>Junjie An, Masaki Namai, and Noriyuki Iwamuro, &#8220;Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation,&#8221; <em>Japanese Journal of Applied Physics<\/em>, vol.55, 124102-1~4, (2016) <a href=\"http:\/\/doi.org\/10.7567\/JJAP.55.124102\">DOI:10.7567\/JJAP.55.124102<\/a><\/li>\n<li>\u5b89\u4fca\u5091\u3001\u751f\u4e95\u6b63\u8f1d\u3001\u5ca1\u672c\u5927\u3001\u77e2\u91ce\u88d5\u53f8\u3001\u53ea\u91ce\u535a\u3001\u5ca9\u5ba4\u61b2\u5e78\u3001\u2018\u2018Unclamped Inductive Switching\u8a66\u9a13\u306b\u3088\u308b4H-SiC MOSFET\u306e\u6700\u5927\u63a5\u5408\u6e29\u5ea6\u306e\u8a55\u4fa1\u201d\u3001\u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cC\u3001137\u5dfb 2\u53f7 C\u5206\u518a\u3001pp.216-221 (2017) <a href=\"http:\/\/doi.org\/10.1541\/ieejeiss.137.216\">DOI: 10.1541\/ieejeiss.137.216<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">\u5ca9\u5ba4\u61b2\u5e78<\/span>\u3001\u5742\u6771\u7ae0\u3001\u77e2\u91ce\u6d69\u53f8\u3001\u5bae\u6fa4\u54f2\u54c9\u3001\u6c5f\u53e3\u535a\u81e3\u3001\u4e09\u6d66\u559c\u76f4\u3001\u9e7f\u5185\u6d0b\u5fd7\u3001\u6c60\u7530\u6210\u660e\u3001\u4e0a\u672c\u5eb7\u88d5\u3001\u5e73\u5ca9\u7be4\u3001\u201d\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u201d\u3001\u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cC\u3001137\u5dfb1\u53f7C\u5206\u518a\u3001pp.13-19 (2017) <a href=\"http:\/\/doi.org\/10.1541\/ieejeiss.137.13\">DOI:10.1541\/ieejeiss.137.13<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">D. Okamoto<\/span>, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, \u201cEffect of boron incorporation on slow interface traps in SiO<sub>2<\/sub>\/4H\u2011SiC structures,\u201d <em>Applied Physics A<\/em>, vol. 123, p.133, 2017.<\/li>\n<li><span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span> and Thomas Laska, &#8220;IGBT History, State-of-the-Art, and Future Prospects,&#8221; <em>IEEE Trans. on Electron Devices<\/em>, vol.64, no.3, pp.741-752, \u00a0(2017) <a href=\"https:\/\/doi.org\/10.1109\/TED.2017.2654599\">DOI:10.1109\/TED.2017.2654599<\/a><\/li>\n<li>(<span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span> and Thomas Laska, &#8220;Correction of IGBT History, State-of-the-Art, and Future Prospects,&#8221; <em>IEEE Trans. on Electron Devices<\/em>, vol.65, no.6, pp.2675,\u00a0\u00a0(2018))<\/li>\n<li><span style=\"text-decoration: underline;\">\u4e39\u7fbd\u7ae0\u96c5<\/span>, \u5c0f\u5cf6\u9818\u592a, \u6728\u6751\u53cb\u5247, \u7b39\u8c37\u5353\u4e5f, <span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>, <span style=\"text-decoration: underline;\">\u53ea\u91ce \u535a<\/span>\uff0c\u300cSiC-MOSFET\u306e\u9006\u56de\u5fa9\u640d\u5931\u4f4e\u6e1b\u306b\u95a2\u3059\u308b\u5b9f\u9a13\u7684\u8003\u5bdf\u300d\uff0c\u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cC, Vol. 137, No. 2, pp. 208-215\u00a0(2017) <a href=\"http:\/\/doi.org\/10.1541\/ieejeiss.137.208\">DOI:10.1541\/ieejeiss.137.208<\/a><\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09<\/h3>\n<ul>\n<li>R. Barrera-Cardenas, T. Isobe, M. Molinas, &#8220;Comparative study of semiconductor devices based on a meta-parameterised approach: SiC MOSFET vs Si IGBT technologies&#8221;,\u00a0in\u00a0<em>IPEMC 2016 ECCE Asia<\/em>, Hefei, China, 22-25 May 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/IPEMC.2016.7512838\">DOI:10.1109\/IPEMC.2016.7512838<\/a><\/li>\n<li>T. Isobe, Y. Yamada and H. Tadano, &#8220;Compensated permanent magnet synchronous generator for power generation in EV and HEV,&#8221; in <em>EVTeC2016<\/em>, Yokohama, Japan, 25-27 May 2016.<\/li>\n<li>R. Barrera-Cardenas, T. Isobe, M. Molinas, &#8220;Quantifying the benefits of SiC MOSFET on efficiency and power density of EV power converter unit&#8221;,\u00a0in\u00a0<em>EVTeC2016<\/em>, Yokohama, Japan, 25-27 May 2016.<\/li>\n<li>T. Isobe, L. Zhang, H. Tadano, J. A. Suul, M. Molinas, &#8220;Control of DC-capacitor peak voltage in reduced capacitance single-phase STATCOM&#8221; in<em> COMPEL 2016<\/em>, Trondheim, Norway, 27-30 June 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/COMPEL.2016.7556773\">DOI:10.1109\/COMPEL.2016.7556773<\/a><\/li>\n<li>R. Barrera-Cardenas, T. Isobe, M. Molinas, &#8220;Optimal design of air-core inductor for medium\/high power DC-DC converters&#8221; in<em> COMPEL 2016<\/em>, Trondheim, Norway, 27-30 June 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/COMPEL.2016.7556774\">DOI:10.1109\/COMPEL.2016.7556774<\/a><\/li>\n<li>J. An, M. Namai, D. Okamoto, H. Yano, H. Tadano, and N. Iwamuro, &#8220;Evaluation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test,&#8221; in <em>ICEE 2016<\/em>, ID 90276, July, 2016.<\/li>\n<li>Takanori Isobe, Rene A. Barrera-Cardenas, Hiroshi Tadano, &#8220;Capacitor size reduction of MMC-based STATCOM for medium voltage power distribution network&#8221;, in <em>EPE2016<em>\u00a0ECCE Europe<\/em><\/em>, Karlsluhe, Germany, 5-9 September, 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/EPE.2016.7695609\">DOI:10.1109\/EPE.2016.7695609<\/a><\/li>\n<li>K. Okuda, T. Isobe, H. Tadano, and N. Iwamuro, &#8220;A dead-time minimized inverter by using complementary topology and its\u00a0experimental\u00a0evaluation of harmonics reduction&#8221;, in <em>EPE2016\u00a0ECCE Europe<\/em>, Karlsluhe, Germany, \u00a05-9 September, 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/EPE.2016.7695673\">DOI: <!--StartFragment-->10.1109\/EPE.2016.7695673<\/a><!--EndFragment--><\/li>\n<li>Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, &#8220;Loss analysis of Z-source inverter using SiC-MOSFET from the perspective of current path in the short-through mode&#8221;, in <em>EPE2016\u00a0ECCE Europe<\/em>, Karlsluhe, Germany, \u00a05-9 September, 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/EPE.2016.7695676\">DOI: 10.1109\/EPE.2016.7695676<\/a><\/li>\n<li>Rene A. Barrera-Cardenas, Takanori Isobe, Marta Molinas, &#8220;Meta-parameterisation of Power Semiconductor Devices for Studies of Efficiency and Power Density in High Power Converters&#8221;, in\u00a0<em>EPE2016<em>\u00a0ECCE Europe<\/em><\/em>, Karlsluhe, Germany, 5-9 September, 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/EPE.2016.7695625\">DOI: 10.1109\/EPE.2016.7695625<\/a><\/li>\n<li>T. Senanayake, R. Iijima, T. Isobe and H. Tadano, &#8220;Z-source with rectangular wave modulation inverter for Hybrid\/Electric vehicles,&#8221; , in\u00a0<em>EPE2016<em>\u00a0ECCE Europe<\/em><\/em>, Karlsluhe, Germany, 5-9 September, 2016. <a href=\"http:\/\/dx.doi.org\/10.1109\/EPE.2016.7695682\">DOI: 10.1109\/EPE.2016.7695682<\/a><\/li>\n<li>Takanori Isobe, Long Zhang, Ryuji Iijima, Hiroshi Tadano, Yasuhiko Kawanami, Katsushi Terazono , &#8220;Experimental verification of capacitance reduction in MMC-Based STATCOM,&#8221; in <em>ECCE 2016<\/em>, Milwaukee, WI, United States, 18-22 September, 2016. <a href=\"https:\/\/doi.org\/10.1109\/ECCE.2016.7855101\" target=\"_blank\">DOI: 10.1109\/ECCE.2016.7855101<\/a><\/li>\n<li>Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano, &#8220;A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors,&#8221; in <em>47th IEEE Semiconductor Interface Specialists Conference<\/em>, San Diego, CA, United States, 2016.12.9<\/li>\n<li>Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura, &#8220;Characterization of Traps at Nitrided SiO2\/ SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements,&#8221; in <em>47th IEEE Semiconductor Interface Specialists Conference<\/em>, San Diego, CA, United States, 2016.12.9<\/li>\n<li>Junjie An, Masaki Namai, Mikiko Tanabe, Dai Okamoto, Hiroshi Yano, and\u00a0Noriyuki Iwamuro, &#8220;Experimental Demonstration of -730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications&#8221;, in 62nd International Electron Device Meeting, IEDM 2016, 10.7, San Fancisco, United Sates, 4-7 Dec, 2016.\u00a0<a href=\"https:\/\/doi.org\/10.1109\/IEDM.2016.7838391\" target=\"_blank\">DOI:<span style=\"font-weight: bold;\">\u00a0<\/span>10.1109\/IEDM.2016.7838391<\/a><\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09<\/h3>\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\uff08SiC\/GaN\/\u9178\u5316\u30ac\u30ea\u30a6\u30e0\uff09\u306e\u6700\u65b0\u52d5\u5411, \u201d\u30002016\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a\u6700\u5148\u7aef\u5b9f\u88c5\u6280\u8853\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, 2016\u5e746\u67082\u65e5<\/li>\n<li>\u5185\u85e4\u5b5d\uff0c\u798f\u7530\u61b2\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u5fb3\u5730\u660e\uff0c\u201d\u9ad8\u901f\u30fb\u9ad8\u96fb\u5727\u30d1\u30eb\u30b9\u96fb\u6e90\u306e\u958b\u767a\uff0c\u201d\u3000\u7b2c13\u56de\u65e5\u672c\u52a0\u901f\u5668\u5b66\u4f1a\u5e74\u4f1a\uff0c\u5e55\u5f35\u30e1\u30c3\u30bb\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2016\u5e748\u67088\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;SiC\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6\u3068\u8ab2\u984c&#8221;, \u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a \u516c\u958b\u7814\u7a76\u4f1a, 2016\u5e747\u670813\u65e5<\/li>\n<li>\u5d8b\u7530\u9686\u4e00\uff0c&#8221;SiC-MOSFET\u306b\u3088\u308b\u7121\u30a2\u30fc\u30af\u4f4e\u30ce\u30a4\u30ba\u306a\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u958b\u9589\u30fb\u63a5\u7d9a\u88c5\u7f6e&#8221;, \u5e73\u621028\u5e74\u96fb\u6c17\u5b66\u4f1a\u96fb\u529b\u30fb\u30a8\u30cd\u30eb\u30ae\u30fc\u90e8\u9580\u5927\u4f1a\uff0c\u4e5d\u5dde\u5de5\u696d\u5927\u5b66 \u6238\u7551\u30ad\u30e3\u30f3\u30d1\u30b9, 2016\u5e749\u67089\u65e5<\/li>\n<li>\u7530\u9089\u4e09\u7d00\u5b50, \u5ca9\u5ba4\u61b2\u5e78, &#8220;\u30c1\u30e3\u30fc\u30b8\u30a4\u30f3\u30d0\u30e9\u30f3\u30b9\u3092\u8003\u616e\u3057\u305fSiC Superjunction MOSFET\u306e\u30aa\u30f3\u62b5\u6297-\u7d20\u5b50\u8010\u5727\u5411\u4e0a\u306e\u691c\u8a0e,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u6708<\/li>\n<li>\u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8, &#8220;\u9ad8\u96fb\u5727\u30fb\u9ad8\u901f\u30d1\u30eb\u30b9\u767a\u751f\u3092\u76ee\u6307\u3057\u305fSiC-pin\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9006\u56de\u5fa9\u89e3\u6790&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u6708<\/li>\n<li>\u5ca1\u672c\u5927, \u5f35\u65ed\u82b3, \u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u76f4\u5217\u62b5\u6297\u3092\u8003\u616e\u3057\u305f\u30a4\u30f3\u30d4\u30fc\u30c0\u30f3\u30b9\u6e2c\u5b9a\u306b\u3088\u308bSiC MOS\u754c\u9762\u89e3\u6790,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u670816\u65e5<\/li>\n<li>\u5f35\u65ed\u82b3,\u00a0\u5ca1\u672c\u5927,\u00a0\u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8221; A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u670816\u65e5<\/li>\n<li>\u738b\u7dd2\u6606, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u7a92\u5316\u3057\u305fSiC MOSFET\u306b\u5bfe\u3059\u308b\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u7279\u6027\u306e\u5468\u6ce2\u6570\u4f9d\u5b58\u6027&#8221;, \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u670816\u65e5<\/li>\n<li>\u5510\u672c\u7950\u6a39, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u67d3\u8c37\u6e80, \u7560\u5c71\u54f2\u592b, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u7a92\u5316\u3057\u305fp\u578bSiC MOS\u30ad\u30e3\u30d1\u30b7\u30bf\u306b\u304a\u3051\u308b\u53cd\u8ee2\u5c64\u306e\u5f62\u6210,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u670816\u65e5<\/li>\n<li>\u7560\u5c71\u54f2\u592b, \u6728\u5185\u7950\u6cbb, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751 \u5143, &#8220;\u30db\u30fc\u30eb\u52b9\u679c\u6e2c\u5b9a\u306b\u3088\u308b\u7a92\u5316SiO<sub>2<\/sub>\/SiC\u754c\u9762\u306e\u4f1d\u5c0e\u5e2f\u8fd1\u508d\u306b\u304a\u3051\u308b\u754c\u9762\u6e96\u4f4d\u306e\u8a55\u4fa1,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u670816\u65e5<\/li>\n<li>\u6728\u5185\u7950\u6cbb, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143, &#8220;4H-SiC\u71b1\u9178\u5316\u819c\u306e\u30ea\u30fc\u30af\u4f1d\u5c0e\u6a5f\u69cb\u306b\u5bfe\u3059\u308b\u7a92\u5316\u51e6\u7406\u306e\u5f71\u97ff,&#8221; \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u670816\u65e5<\/li>\n<li>\u5f35\u65ed\u82b3, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;Quantitative estimation of near-interface traps with distributed circuit model for 4H-SiC MOS capacitors,&#8221; \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u738b\u7dd2\u6606, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u306b\u3088\u308b4H-SiC MOSFET\u306e\u754c\u9762\u8fd1\u508d\u9178\u5316\u819c\u6b20\u9665\u306e\u89e3\u6790&#8221;, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u5510\u672c\u7950\u6a39, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u67d3\u8c37\u6e80, \u7560\u5c71\u54f2\u592b, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u7a92\u5316\u3057\u305fp\u578bSiC MOS\u30ad\u30e3\u30d1\u30b7\u30bf\u306b\u304a\u3051\u308b\u53cd\u8ee2\u5c64\u306e\u5f62\u6210,&#8221; \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u7560\u5c71\u54f2\u592b, \u6728\u5185\u7950\u6cbb, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751 \u5143, &#8220;\u30db\u30fc\u30eb\u52b9\u679c\u6e2c\u5b9a\u306b\u3088\u308b\u7a92\u5316SiO2\/SiC\u754c\u9762\u306e\u4f1d\u5c0e\u5e2f\u8fd1\u508d\u306b\u304a\u3051\u308b\u754c\u9762\u6e96\u4f4d\u306e\u8a55\u4fa1,&#8221; \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u6728\u5185\u7950\u6cbb, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143, &#8220;4H-SiC\u71b1\u9178\u5316\u819c\u306e\u30ea\u30fc\u30af\u4f1d\u5c0e\u6a5f\u69cb\u306b\u5bfe\u3059\u308b\u7a92\u5316\u51e6\u7406\u306e\u52b9\u679c,&#8221; \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u7530\u9089\u4e09\u7d00\u5b50,\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30c1\u30e3\u30fc\u30b8\u30a4\u30f3\u30d0\u30e9\u30f3\u30b9\u3092\u8003\u616e\u3057\u305f SiC Superjunction MOSFET\u306e\u30aa\u30f3\u62b5\u6297-\u7d20\u5b50\u8010\u5727\u5411\u4e0a\u306e\u691c\u8a0e,&#8221;\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c3\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8, &#8220;\u9ad8\u96fb\u5727\u30fb\u9ad8\u901f\u30d1\u30eb\u30b9\u767a\u751f\u3092\u76ee\u6307\u3057\u305fSiC-pin\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9006\u56de\u5fa9\u7279\u6027\u89e3\u6790,&#8221;\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c\uff13\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;SiC-MOSFET\u3092\u7528\u3044\u305fZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u30dc\u30c7\u30a3\u30c0\u30a4\u30aa\u30fc\u30c9\u7121\u901a\u96fb\u904b\u8ee2\u306b\u95a2\u3059\u308b\u691c\u8a0e,&#8221;\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c3\u56de\u8b1b\u6f14\u4f1a, \u3064\u304f\u3070\u56fd\u969b\u4f1a\u8b70\u5834, 2016\u5e7411\u67088\u65e5<\/li>\n<li>\u751f\u4e95\u6b63\u8f1d, \u5b89\u4fca\u5091, \u5ca9\u5ba4\u61b2\u5e78, &#8220;SiC MOSFET\u8ca0\u8377\u77ed\u7d61\u6642\u306e\u7d20\u5b50\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u89e3\u6790,&#8221; \u7b2c36\u56de\u30ca\u30ce\u30c6\u30b9\u30c6\u30a3\u30f3\u30b0\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u5343\u91cc\u30e9\u30a4\u30d5\u30b5\u30a4\u30a8\u30f3\u30b9\u30bb\u30f3\u30bf\u30fc, 2016\u5e7411\u67089\u65e5<\/li>\n<li>\u5965\u7530\u4e00\u771f, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u5ca9\u5ba4\u61b2\u5e78\uff0c&#8221;\u30c7\u30c3\u30c9\u30bf\u30a4\u30e0\u306b\u3088\u308b\u554f\u984c\u3092\u89e3\u6d88\u3059\u308b\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u7814\u7a76&#8221;\uff0c\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u5317\u4e5d\u5dde\uff08\u4e5d\u5dde\u5de5\u696d\u5927\u5b66\u3000\u6238\u7551\u30ad\u30e3\u30f3\u30d1\u30b9\uff09, 2016\u5e7411\u670814\u30fb15\u65e5<\/li>\n<li>\u5409\u7530\u5343\u6075, \u5965\u7530\u4e00\u771f, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201c\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027\u89e3\u6790,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c216\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u7acb\u547d\u9928\u5927\u5b66\u5927\u962a\u30fb\u3044\u3070\u3089\u304d\u30ad\u30e3\u30f3\u30d1\u30b9(OIC), 2016\u5e7412\u67083\u65e5<\/li>\n<li>\u9d28\u5fd7\u7530\u76f4\u6a39, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u3078\u306eSJ-MOSFET\u306e\u9069\u7528\u306b\u95a2\u3059\u308b\u7814\u7a76\u00a0,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c216\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u7acb\u547d\u9928\u5927\u5b66\u5927\u962a\u30fb\u3044\u3070\u3089\u304d\u30ad\u30e3\u30f3\u30d1\u30b9(OIC), 2016\u5e7412\u67083\u65e5<\/li>\n<li>\u5009\u6301\u62d3\u5f25, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cHigh-side SiC-MOSFET\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u52d5\u4f5c\u306b\u4e0e\u3048\u308b\u5bc4\u751f\u30a4\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u306e\u5f71\u97ff,\u201d \u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b66\u4f1a\u7b2c216\u56de\u5b9a\u4f8b\u7814\u7a76\u4f1a, \u7acb\u547d\u9928\u5927\u5b66\u5927\u962a\u30fb\u3044\u3070\u3089\u304d\u30ad\u30e3\u30f3\u30d1\u30b9(OIC), 2016\u5e7412\u67083\u65e5<\/li>\n<li>\u5f35\u65ed\u82b3, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5c0f\u6749\u4eae\u6cbb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;Verification of Modified Distributed Circuit Model for Near-Interface\u00a0Traps in 4H-SiC MOS Interface,&#8221; \u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a \u7b2c22\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, 2017\u5e741\u670820\u65e5<\/li>\n<li>\u7560\u5c71\u54f2\u592b, \u6728\u5185\u7950\u6cbb, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143, &#8220;\u30db\u30fc\u30eb\u52b9\u679c\u6e2c\u5b9a\u306b\u3088\u308b\u7a92\u5316SiO2\/SiC\u754c\u9762\u306e\u4f1d\u5c0e\u5e2f\u8fd1\u508d\u306e\u754c\u9762\u6e96\u4f4d\u8a55\u4fa1,&#8221; \u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a \u7b2c22\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, 2017\u5e741\u670820\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78, &#8220;\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\uff5e\u65e5\u672c\u306b\u6b8b\u3059\u3079\u304d\u4f53\u7cfb\u7684\u30d1\u30ef\u30a8\u30ec\u6280\u8853\uff5e,\u201d \u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a \u7b2c22\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, 2017\u5e741\u670820\u65e5<\/li>\n<li>\u5f35\u9f8d, \u8cc0\u5b50\u4eca, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;\u5358\u76f8STATCOM\u306b\u304a\u3051\u308b\u30b3\u30f3\u30c7\u30f3\u30b5\u9759\u96fb\u5bb9\u91cf\u4f4e\u6e1b\u306e\u305f\u3081\u306e\u30d4\u30fc\u30af\u96fb\u5727\u5236\u5fa1\u3068\u4e09\u76f8MMC\u69cb\u6210\u306b\u304a\u3051\u308b\u5b9f\u9a13\u7684\u691c\u8a3c,&#8221; \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u4e45\u7c73\u5cf6(\u30a4\u30fc\u30d5\u60c5\u5831\u30d7\u30e9\u30b6\u3000\u4ea4\u6d41\u30db\u30fc\u30eb), 2017\u5e743\u67088\u65e5\uff5e3\u670810\u65e5<\/li>\n<li>\u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;Superjunction\u3000MOSFET\u3092\u7528\u3044\u305f\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u691c\u8a0e\u2010Z\u30bd\u30fc\u30b9\u30c8\u30dd\u30ed\u30b8\u30fc\u306e\u9069\u7528\u2010,&#8221; \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u4e45\u7c73\u5cf6(\u30a4\u30fc\u30d5\u60c5\u5831\u30d7\u30e9\u30b6\u3000\u4ea4\u6d41\u30db\u30fc\u30eb), 2017\u5e743\u67088\u65e5\uff5e3\u670810\u65e5<\/li>\n<li>\u9673\u5049\u592b, \u9112\u694a, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;Dual Active Bridge\u30b3\u30f3\u30d0\u30fc\u30bf\u306eDuty\u6bd4\u5236\u5fa1\u306b\u3088\u308b\u640d\u5931\u4f4e\u6e1b\u904b\u8ee2\u306e\u691c\u8a3c,&#8221; \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u4e45\u7c73\u5cf6(\u30a4\u30fc\u30d5\u60c5\u5831\u30d7\u30e9\u30b6\u3000\u4ea4\u6d41\u30db\u30fc\u30eb), 2017\u5e743\u67088\u65e5\uff5e3\u670810\u65e5<\/li>\n<li>\u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8, &#8220;SiC-p+\/p-\/n+\u578b\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9006\u56de\u5fa9\u6642\u306b\u304a\u3051\u308b\u30ad\u30e3\u30ea\u30a2\u306e\u6383\u51fa\u3057\u3068\u30d1\u30eb\u30b9\u751f\u6210\u306e\u95a2\u4fc2\u6027\u89e3\u6790&#8221;,\u00a0\u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670815\u65e5<\/li>\n<li>\u5f8c\u85e4\u5927\u6cb3, \u767d\u4e95\u7422\u6bec, \u5ca9\u5ba4\u61b2\u5e78, \u798f\u7530\u61b2\u53f8 \u201cSiC-p MOSFET\u306e\u30dc\u30c7\u30a3\u30c0\u30a4\u30aa\u30fc\u30c9\u3092\u7528\u3044\u305fSiC-pin\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9006\u56de\u5fa9\u7279\u6027\u89e3\u6790\u201d \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670815\u65e5<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78 &#8220;Si\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30d7\u30ed\u30bb\u30b9\u306e\u6700\u65b0\u52d5\u5411\u201d\u3000\u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c\u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670816\u65e5<\/li>\n<li>\u6728\u5185\u7950\u6cbb, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143, &#8220;4H-SiC C\u9762\u71b1\u9178\u5316\u819c\u306e\u30ea\u30fc\u30af\u4f1d\u5c0e\u6a5f\u69cb\u306b\u5bfe\u3059\u308b\u7a92\u5316\u51e6\u7406\u306e\u5f71\u97ff,&#8221; \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670817\u65e5<\/li>\n<li>\u5929\u91ce\u8cb4\u7ae0, \u5ca1\u672c\u5927, \u539f\u7530\u4fe1\u4ecb, \u7560\u5c71\u54f2\u592b, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;SiC MOSFET\u306e\u30db\u30fc\u30eb\u79fb\u52d5\u5ea6\u306e\u6e29\u5ea6\u4f9d\u5b58\u6027,&#8221; \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670817\u65e5<\/li>\n<li>\u738b\u7dd2\u6606, \u5ca1\u672c\u5927, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, &#8220;\u7a92\u5316\u3057\u305fSiC MOSFET\u306b\u5bfe\u3059\u308b\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u7279\u6027\u306e\u30c7\u30e5\u30fc\u30c6\u30a3\u6bd4\u4f9d\u5b58\u6027,&#8221; \u7b2c64\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u30d1\u30b7\u30d5\u30a3\u30b3\u6a2a\u6d5c, 2017\u5e743\u670817\u65e5<\/li>\n<li>\u5009\u6301\u62d3\u5f25,\u78ef\u90e8\u9ad8\u7bc4,\u53ea\u91ce\u535a,\u00a0 &#8220;SiC-MOSFET\u52d5\u4f5c\u6642\u306b\u304a\u3051\u308b\u8aa4\u30bf\u30fc\u30f3\u30aa\u30f3\u306eHigh-side\u30b2\u30fc\u30c8\u62b5\u6297\u4f9d\u5b58\u6027\u306b\u95a2\u3059\u308b\u691c\u8a0e&#8221; \u5e73\u621029\u5e74 \u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5bcc\u5c71\u5927\u5b66 \u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9, 2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>\n<li>\u6e21\u908a\u76f4\u4e5f\uff0c\u53ea\u91ce\u535a\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201c\u76f4\u5217\u88dc\u511f\u56de\u8def\u3092\u7528\u3044\u305f\u975e\u63a5\u89e6\u7d66\u96fb\u30b7\u30b9\u30c6\u30e0\u306b\u304a\u3051\u308b\u51fa\u529b\u96fb\u529b\u5236\u5fa1\u6cd5\u306e\u63d0\u6848\u3068\u5b9f\u9a13\u7684\u691c\u8a3c\u201d\uff0c\u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5bcc\u5c71\u5927\u5b66\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>\n<li>\u5965\u7530\u4e00\u771f\uff0c\u9ad8\u5d8b\u85ab\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u201c\u8a66\u4f5cSiC-p\u30c1\u30e3\u30cd\u30ebMOSFET\u3092\u9069\u7528\u3057\u305f\u30d5\u30eb-SiC\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c\u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5bcc\u5c71\u5927\u5b66\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>\n<li>\u5f35\u5263\u97dc,\u78ef\u90e8\u9ad8\u7bc4,\u53ea\u91ce\u535a, &#8220;TPCM\u96fb\u6d41\u30e2\u30fc\u30c9\u3092\u7528\u3044\u305f\u5358\u76f8\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u95a2\u3059\u308b\u691c\u8a0e&#8221;\uff0c\u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5bcc\u5c71\u5927\u5b66\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>\n<li>\u9ad9\u6a4b\u52c7\u7d00,\u98ef\u5d8b\u7adc\u53f8,\u78ef\u90e8\u9ad8\u7bc4,\u53ea\u91ce \u535a, \u5c71\u5d0e\u9577\u6cbb, \u9577\u8c37\u5ddd\u667a\u5b8f, &#8220;\u30b3\u30f3\u30c7\u30f3\u30b5\u653e\u96fb\u578b\u30d1\u30eb\u30b9\u96fb\u5727\u767a\u751f\u56de\u8def\u3078\u306e\u51fa\u529b\u96fb\u5727\u88dc\u511f\u56de\u8def\u306e\u9069\u7528\u306b\u95a2\u3059\u308b\u691c\u8a0e&#8221;<!--StartFragment-->\uff0c\u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5bcc\u5c71\u5927\u5b66\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<!--EndFragment--><\/li>\n<li>\u5927\u6fa4\u9806,\u6e21\u908a\u76f4\u4e5f,\u53ea\u91ce\u535a,\u78ef\u90e8\u9ad8\u7bc4, &#8220;\u76f4\u5217\u88dc\u511f\u56de\u8def\u306b\u3088\u308b\u975e\u63a5\u89e6\u7d66\u96fb\u7528\u9ad8\u5468\u6ce2\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u30b3\u30a4\u30eb\u30d1\u30e9\u30e1\u30fc\u30bf\u306b\u5fdc\u3058\u305f\u52b9\u7387\u6700\u9069\u5316&#8221;,\u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a,\u5bcc\u5c71\u5927\u5b66\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9,2017\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>\n<li>\u9d28\u5fd7\u7530\u76f4\u6a39, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, &#8220;<span style=\"color: #000000;\">Z\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u65b9\u5f0f\u306b\u3088\u308bSJ-MOSFET\u306ePWM\u30a4\u30f3\u30d0\u30fc\u30bf\u9069\u7528\u306e\u691c\u8a0e<\/span>&#8220;, \u5e73\u621029\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5bcc\u5c71\u5927\u5b66<span style=\"color: #555555;\">\u4e94\u798f\u30ad\u30e3\u30f3\u30d1\u30b9, 2017\u5e743\u670815\u65e5~3\u670817\u65e5<\/span><\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78 &#8220;\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411(SiC,GaN)\u201d \u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5b9f\u88c5\u5b66\u4f1a \u516c\u958b\u7814\u7a76\u4f1a, 2017\u5e743\u670821\u65e5<\/li>\n<\/ul>\n<h3>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b<\/h3>\n<ul>\n<li>Noriyuki Iwamuro, &#8220;Semiconductor Materials Seal Role in Power Devices&#8221;, ASIA ELECTRONICS INDUSTRY, 2016\u5e749\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78, &#8220;\u7b51\u6ce2\u5927\u5b66\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u5bc4\u9644\u8b1b\u5ea7\u306e\u3054\u7d39\u4ecb&#8221;, SEAJ Journal 2016\u5e744\u6708\u53f7 \uff08\u793e\uff09\u65e5\u672c\u534a\u5c0e\u4f53\u88fd\u9020\u88c5\u7f6e\u5354\u4f1a<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78, &#8220;\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u3092\u652f\u3048\u308bSiC\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306a\u3089\u3073\u306b\u305d\u306e\u5b9f\u88c5\u6280\u8853\u201d, SEAJ Journal 2016\u5e741\u6708\u53f7 \uff08\u793e\uff09\u65e5\u672c\u534a\u5c0e\u4f53\u88fd\u9020\u88c5\u7f6e\u5354\u4f1a<\/li>\n<\/ul>\n<h3>\u8b1b\u6f14<\/h3>\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u52d5\u5411\u304a\u3088\u3073SiC\/GaN\u7814\u7a76\u958b\u767a\u306e\u6700\u524d\u7dda,&#8221; \u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u30d5\u30a9\u30fc\u30e9\u30e0\u30d1\u30ef\u30a8\u30ec\u9053\u5834, 2016\u5e748\u67088\u65e5<\/li>\n<\/ul>\n<h3>\u66f8\u7c4d<\/h3>\n<ul>\n<li>Rene A. Barrera-Cardenas, Marta Molinas, &#8220;Chapter: Modelling of power electronic components for evaluation of efficiency, power density and power-to-mass ratio of offshore wind power converters&#8221; in the Book\u00a0Offshore Wind Farms, pp.193-261, March 2016.\u00a0DOI: 10.1016\/B978-0-08-100779-2.00009-X.<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"&nbsp; \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 Y. Kiuchi, H. Kitai, H. Shiomi, M. Tsujimura, D. Nakata, S. Harada, Y. Yonezawa, K. Fukuda, K. &#8230;","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/2373"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=2373"}],"version-history":[{"count":127,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/2373\/revisions"}],"predecessor-version":[{"id":4223,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/2373\/revisions\/4223"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=2373"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}