{"id":3353,"date":"2017-05-18T12:07:41","date_gmt":"2017-05-18T03:07:41","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=3353"},"modified":"2020-10-20T17:54:04","modified_gmt":"2020-10-20T08:54:04","slug":"2017%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=3353","title":{"rendered":"2017\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<p>&nbsp;<\/p>\n<h3>\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587<\/h3>\n<ul>\n<li>J. An, M. Namai, D. Okamoto, H. Yano, H. Tadano, and N. Iwamuro, &#8220;Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test,&#8221; <em>Electronics and Communications in Japan<\/em>, vol. 101, no. 1, pp. 24\u201331, 2018, <a href=\"https:\/\/doi.org\/10.1002\/ecj.12018\">DOI: 10.1002\/ecj.12018<\/a>.<\/li>\n<li>J. An, M. Namai, H. Yano, and N. Iwamuro, &#8220;<span class=\"ng-binding\">Investigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications<\/span>,&#8221; <em>IEEE Trans. Electron Devices<\/em>, <span style=\"color: #000000;\">Vol. 64, No. 10, pp. 4219\u20134225, Oct.\u00a0<\/span>2017, <a class=\"ng-binding ng-isolate-scope\" href=\"https:\/\/doi.org\/10.1109\/TED.2017.2742542\" target=\"_blank\">DOI: 10.1109\/TED.2017.2742542<\/a>.<\/li>\n<li>T. Hatakeyama, Y. Kiuchi, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, <span style=\"text-decoration: underline;\">H. Yano<\/span>, Y. Yonezawa, and H. Okumura, \u201cCharacterization of traps at nitrided SiO2\/SiC interfaces near the conduction band edge by using Hall effect measurements,\u201d <em>Applied Physics Express<\/em>, vol. 10, p.046601, 2017.<\/li>\n<li><span style=\"text-decoration: underline;\">Haruka Shimizu<\/span>, Akio Shima, Yasuhiro Shimamoto, and <span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span>,&#8221;Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs,&#8221; <em>Japanese Journal of Applied Physics<\/em>, vol. 56, Issue 4S, 04CR15, (2017)<\/li>\n<li><span style=\"text-decoration: underline;\">A. Niwa<\/span>, T. Imazawa, R. Kojima, M. Yamamoto, T. Sasaya, <span style=\"text-decoration: underline;\">T. Isobe<\/span>, <span style=\"text-decoration: underline;\">H. Tadano<\/span>, &#8220;A Dead Time Controlled Gate Driver Using Current Sense FET Integrated in SiC MOSFET,&#8221; <em>IEEE Trans. on Power Electronics<\/em>, Vol. 33, No. 4, pp. 3258\u20133267\u00a0 (2018), <a href=\"https:\/\/doi.org\/10.1109\/TPEL.2017.2704620\">DOI:10.1109\/TPEL.2017.2704620<\/a>.<\/li>\n<li>M. Okamoto, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">H. Yano<\/span>, and H. Okumura, \u201cDynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET\u201d, <em>Mater. Sci. Forum<\/em>, Vol. 897, pp. 549\u2013552 (2017),\u00a0 <a href=\"https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.897.549\">DOI: 10.4028\/www.scientific.net\/MSF.897.549<\/a>.<\/li>\n<li><span style=\"text-decoration: underline;\">X. Zhang<\/span>, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, <span style=\"text-decoration: underline;\">H. Yano<\/span>, &#8220;Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model,&#8221; <em>Appl. Phys. Express <\/em> Vol. 10, No. 6, 064101 (2017) <a href=\"https:\/\/doi.org\/10.7567\/APEX.10.064101\">DOI:10.7567\/APEX.10.064101<\/a>.<\/li>\n<li>\u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a,&#8221;SiC-MOSFET\u3092\u7528\u3044\u305fZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u4e0a\u4e0b\u77ed\u7d61\u52d5\u4f5c\u306b\u3088\u308b\u30dc\u30c7\u30a3\u30c0\u30a4\u30aa\u30fc\u30c9\u7121\u901a\u96fb\u904b\u8ee2&#8221;,\u00a0 \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8c D, Vol. 138 No. 3 pp. 250\u2013256, 2018\u5e743\u67081\u65e5, <a href=\"https:\/\/doi.org\/10.1541\/ieejias.138.250\">DOI:10.1541\/ieejias.138.250<\/a>.<\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09<\/h3>\n<ul>\n<li>Masaki Namai, Junjie An, Hiroshi Yano and Noriyuki Iwamuro, &#8220;Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability,&#8221;<em> in Proceedings of\u00a0International Symposium on Power Semiconductor Devices &amp; ICs (ISPSD)2017<\/em>,\u00a0pp.363-366, (2017).<\/li>\n<li>Rene Barrera-Cardenas, Jiantao Zhang, Takanori Isobe, Hiroshi Tadano, &#8220;Influence of CCM and DCM Operation on Converter Efficieny and Power Density of a Single-Phase Grid-Tied Inverter&#8221;<em> in Proceedings of International Future Energy Electronics Conference 2017 (IFEEC 2017)<\/em>, June 3-7 2017, Kaohsiung, Taiwan, <a href=\"https:\/\/doi.org\/10.1109\/IFEEC.2017.7992353\">DOI:10.1109\/IFEEC.2017.7992353<\/a>.<\/li>\n<li>Zijin He, Long Zhang, Takanori Isobe, Hiroshi Tadano, &#8220;Dynamic Performance Improvement of Single-Phase STATCOM with Drastically Reduced Capacitance&#8221;<em> in Proceedings of International Future Energy Electronics Conference\u00a02017 (IFEEC 2017)<\/em>, June 3-7 2017, Kaohsiung, Taiwan, <a href=\"https:\/\/doi.org\/10.1109\/IFEEC.2017.7992251\">DOI: 10.1109\/IFEEC.2017.7992251<\/a>.<\/li>\n<li>Rene Barrera-Cardenas, Jiantao Zhang, Takanori Isobe, Hiroshi Tadano, &#8220;A Comparative Study of Output Filter Efficiency and Power Density in Single-Phase Grid-Tied Inverter Using Continuous or Discontinuous Current Mode Operations&#8221;<em> in Proceedings of 19th European Conference on Power Electronics and Applications, (EPE\u201917 ECCE Europe)<\/em>, September 11-14 2017, Warsaw, Poland, <a href=\"https:\/\/doi.org\/10.23919\/EPE17ECCEEurope.2017.8099379\">DOI: 10.23919\/EPE17ECCEEurope.2017.8099379<\/a>.<\/li>\n<li>T. Goto, T. Shirai, A. Tokuchi, T. Naito, K. Fukuda, and N. Iwamuro,\u00a0&#8220;Experimental demonstration on ultra-high voltage and high speed 4H-SiC DSRD with smaller numbers of die stacks for pulse power applications,&#8221; <em>Abstract of ICSCRM2017<\/em>, September, 2017,Washington D.C, MO.D1.2.<\/li>\n<li>Jiantao Zhang, Rene Barrera-Cardenas, Takanori Isobe, Hiroshi Tadano, &#8220;Trapezium Current Mode (TPCM) Boundary Operation for Single Phase Grid-tied Inverter&#8221; <em>in Proceedings of\u00a0 9th Annual IEEE Energy Conversion Congress &amp; Exposition, (ECCE 2017)<\/em>, October 1-5 2017, Cincinnati, Ohio, U.S.A, <a href=\"https:\/\/doi.org\/10.1109\/ECCE.2017.8096005\">DOI:10.1109\/ECCE.2017.8096005<\/a>.<\/li>\n<li>Takanori Isobe, Zijin He, Yang Zou, Hiroshi Tadano, &#8220;Control of solid-state-transformer for minimized energy storage capacitors&#8221; <em>in Proceedings of\u00a0 9th Annual IEEE Energy Conversion Congress &amp; Exposition, (ECCE 2017)<\/em>, October 1-5 2017, Cincinnati, Ohio, U.S.A, <a href=\"https:\/\/doi.org\/10.1109\/ECCE.2017.8096672\">DOI:10.1109\/ECCE.2017.8096672<\/a>.<\/li>\n<li>Jiantao Zhang, Rene Barrera-Cardenas, Takanori Isobe, Hiroshi Tadano, &#8220;Evaluation of Trapezium Current Mode in Comparison to the Discontinuous Current Mode for Single Phase Grid-tied Inverter&#8221; <em>in Proceedings of\u00a0 the 43th Annual Conference of the IEEE Industrial Electronics Society, (IECON 2017)<\/em>, October 29-November 1 2017, Beijing, China, <a href=\"https:\/\/doi.org\/10.1109\/IECON.2017.8216193\">DOI:10.1109\/IECON.2017.8216193<\/a>.<\/li>\n<li>Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani,Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano, &#8220;Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors&#8221;\u00a0<em><em>in Proceedings of International Workshop on Dielectric Thin films for Future Electron Devices\u00a0<em>(IWDTF\u00a02017)\u00a0November\u00a020-22,\u00a02017,\u00a0Nara, Japan.<\/em><\/em><\/em><\/li>\n<li>Yuki Karamoto, Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano, &#8220;Analysis of fast and slow responses of interface traps in p-type SiC MOS capacitors by conductance method&#8221; <em>in Proceedings of International Workshop on Dielectric Thin films for Future Electron Devices (IWDTF 2017) November 20-22, 2017, Nara, Japan. <\/em><\/li>\n<li>Noriyuki Iwamuro,&#8221;Recent Progress of Power Semiconductor Devices and Their Future (Invited),&#8221; 2017 <em>IEEE CPMT Symposium Japan<\/em>, November 20-22, 2017, Kyoto, Japan, 15-02, pp.191-194, <a class=\"ng-binding ng-isolate-scope\" href=\"https:\/\/doi.org\/10.1109\/ICSJ.2017.8240114\" target=\"_blank\">DOI:10.1109\/ICSJ.2017.8240114<\/a> .<\/li>\n<li>Daichi Yamanodera, Takanori Isobe, Hiroshi Tadano,&#8221;Application of GaN Device to MHz Operating Grid-Tied Inverter Using Discontinuous Current Mode for Compact and Efficient Power Conversion,&#8221; in\u00a0<em>Proceedings of 12th IEEE Power Electronics and Drive Systems, (PEDS 2017), December<\/em>\u00a012-15,2017, Hawaii, U.S.A, <a href=\"https:\/\/doi.org\/10.1109\/PEDS.2017.8289255\" target=\"_blank\">DOI:10.1109\/PEDS.2017.8289255<\/a>.<\/li>\n<li>Jun Osawa,\u00a0Takanori Isobe,\u00a0Hiroshi Tadano,&#8221;Efficiency Improvement of High Frequency Inverter for Wireless Power Transfer System Using a Series Reactive Power Compensator,&#8221; in\u00a0<em>Proceedings of 12th IEEE Power Electronics and Drive Systems, (PEDS 2017),\u00a0<em>December\u00a0<\/em><\/em>12-15,2017, Hawaii, U.S.A, <a href=\"https:\/\/doi.org\/10.1109\/PEDS.2017.8289240\" target=\"_blank\">DOI:10.1109\/PEDS.2017.8289240<\/a>.<\/li>\n<li>Yang Zou, Rene Barrera-Cardenas,\u00a0Takanori Isobe,\u00a0Hiroshi Tadano,&#8221;Power Loss Analysis of DAB Converter for SST Operated in Oscillating Power Control,&#8221; in\u00a0<em>Proceedings of 12th IEEE Power Electronics and Drive Systems, (PEDS 2017),\u00a0<em>December\u00a0<\/em><\/em>12-15,2017, Hawaii, U.S.A, <a href=\"https:\/\/doi.org\/10.1109\/PEDS.2017.8289258\" target=\"_blank\">DOI:10.1109\/PEDS.2017.8289258<\/a>.<\/li>\n<li>Ryuji Iijima, Takanori Isobe, Hiroshi Tadano,&#8221;Optimized Short-Through Time Distribution for Inductor Current Ripple Reduction in Z-Source Inverter&#8221; in\u00a0<em> IEEE\u3000Applied Power Electronics Conference and Exposition, (APEC 2018),\u00a0<em>\u00a0<\/em><\/em>March 4-8,2017, Texas, U.S.A, <a href=\"https:\/\/doi.org\/10.1109\/APEC.2018.8341374\" target=\"_blank\">DOI:10.1109\/APEC.2018.8341374<\/a>.<\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09<\/h3>\n<ul>\n<li>\u9ad9\u6a4b\u52c7\u7d00, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u5c71\ufa11\u9577\u6cbb, \u9577\u8c37\u5ddd\u667a\u5b8f, &#8220;\u30b9\u30a4\u30c3\u30c1\u578b\u30af\u30e9\u30a4\u30b9\u30c8\u30ed\u30f3\u30e2\u30b8\u30e5\u30ec\u30fc\u30bf\u3078\u306e\u51fa\u529b\u96fb\u5727\u88dc\u511f\u56de\u8def\u306e\u9069\u7528\u306b\u95a2\u3059\u308b\u691c\u8a0e&#8221;,\u00a0 \u65e5\u672c\u52a0\u901f\u5668\u5b66\u4f1a \u7b2c14\u56de\u5e74\u4f1a, \u672d\u5e4c\u5e02\uff08\u5317\u6d77\u9053\u5927\u5b66 \u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9\uff09, 2017\u5e748\u67081\u65e5~8\u67083\u65e5<\/li>\n<li>\u5510\u672c\u7950\u6a39, \u5f35\u65ed\u82b3, \u5ca1\u672c\u5927, \u67d3\u8c37\u6e80, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, \u201c\u30b3\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u6cd5\u306b\u3088\u308bp\u578bSiC MOS\u30ad\u30e3\u30d1\u30b7\u30bf\u754c\u9762\u7279\u6027\u306e\u89e3\u6790\u201d, \u7b2c78\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u798f\u5ca1\u56fd\u969b\u4f1a\u8b70\u5834, 2017\u5e749\u67085\u65e5~8\u65e5<\/li>\n<li>\u5f35\u65ed\u82b3,\u00a0\u5ca1\u672c\u5927,\u00a0\u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, \u201c Verification of density distribution of near-interface traps in 4H-SiC MOS capacitors with different oxide thicknesses,\u201d\u7b2c78\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u798f\u5ca1\u56fd\u969b\u4f1a\u8b70\u5834, 2017\u5e749\u67085\u65e5~8\u65e5<\/li>\n<li>\u9d28\u5fd7\u7530\u76f4\u6a39, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cSuperjunction-MOSFET\u3092\u9069\u7528\u3057\u305fZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u6607\u5727\u52d5\u4f5c\u306b\u4f34\u3046\u640d\u5931\u306e\u89e3\u6790\u201d, \u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u30fb\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a, \u548c\u6b4c\u5c71\u770c, 2017\u5e749\u67087\u65e5~8\u65e5<\/li>\n<li>\u5510\u672c\u7950\u6a39, \u5f35\u65ed\u82b3, \u5ca1\u672c\u5927, \u67d3\u8c37\u6e80, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, \u201c\u30b3\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u6cd5\u306b\u3088\u308bp\u578bSiC MOS\u754c\u9762\u306e\u9ad8\u901f\u53ca\u3073\u4f4e\u901f\u5fdc\u7b54\u6e96\u4f4d\u306e\u89e3\u6790\u201d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c4\u56de\u8b1b\u6f14\u4f1a, \u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834, 2017\u5e7411\u67081\u65e5~2\u65e5<\/li>\n<li>\u5f35\u65ed\u82b3,\u00a0\u5ca1\u672c\u5927,\u00a0\u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8,\u201c 4H-SiC MOS\u754c\u9762\u306b\u304a\u3051\u308bNIT\u5bc6\u5ea6\u5206\u5e03\u306e\u819c\u539a\u4f9d\u5b58\u6027\u201d,\u00a0\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c4\u56de\u8b1b\u6f14\u4f1a, \u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834, 2017\u5e7411\u67081\u65e5~2\u65e5<\/li>\n<li>\u5c71\u91ce\u5bfa\u5927\u5730, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a,\u201cGaN\u30c7\u30d0\u30a4\u30b9\u3092\u7528\u3044\u305f\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306eMHz\u904b\u8ee2\u306b\u304a\u3051\u308b\u52d5\u4f5c\u691c\u8a3c\u304a\u3088\u3073\u640d\u5931\u306e\u89e3\u6790\u201d, \u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u30fb\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u9e7f\u5150\u5cf6\u5927\u5b66, 2017\u5e7411\u670820\u65e5~21\u65e5<\/li>\n<li>\u77f3\u5ddd\u6e05\u592a\u90ce, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a,\u201c\u9ad8\u901f\u99c6\u52d5SiC-MOSFET\u306e\u4e26\u5217\u63a5\u7d9a\u306b\u95a2\u3059\u308b\u691c\u8a0e\u201d, \u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u30fb\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u9e7f\u5150\u5cf6\u5927\u5b66, 2017\u5e7411\u670820\u65e5~21\u65e5<\/li>\n<li>\u5f35\u65ed\u82b3,\u00a0\u5ca1\u672c\u5927,\u00a0\u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, \u201cDifference of NIT density distribution in 4H-SiC MOS interfaces for Si- and C-faces, \u7b2c23\u56de\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a,\u00a0\u9759\u5ca1\u770c\u4e09\u5cf6\u5e02\u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, 2018\u5e741\u670818\u65e5~20\u65e5<\/li>\n<li>\u8cc0\u5b50\u4eca, \u9112\u694a, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201c\u30e2\u30b8\u30e5\u30fc\u30e9\u30fb\u30ab\u30b9\u30b1\u30fc\u30c9\u65b9\u5f0fSolid-State-Transformer\u306b\u304a\u3051\u308bDC\u30ea\u30f3\u30af\u30b3\u30f3\u30c7\u30f3\u30b5\u5c0f\u578b\u5316\u306e\u305f\u3081\u306e\u8108\u52d5\u96fb\u529b\u5236\u5fa1,\u201d \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u718a\u672c(\u718a\u672c\u5e02\u56fd\u969b\u4ea4\u6d41\u4f1a\u9928), 2018\u5e743\u67085\u65e5\uff5e3\u67086\u65e5<\/li>\n<li>\u9112\u694a, <span style=\"color: #000000;\">Barrera-Cardenas Rene,\u00a0<\/span>\u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201c<span style=\"color: #000000;\">Power Loss Analysis of DAB Converter for SST Operated in Oscillating Power Control<\/span>,\u201d \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a, \u718a\u672c(\u718a\u672c\u5e02\u56fd\u969b\u4ea4\u6d41\u4f1a\u9928), 2018\u5e743\u67085\u65e5\uff5e3\u67086\u65e5<\/li>\n<li>\u9ad9\u6a4b\u52c7\u7d00, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201c\u76f4\u5217\u96fb\u5727\u88dc\u511f\u56de\u8def\u3092\u7528\u3044\u305f\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u5909\u5727\u5668\u306e\u691c\u8a0e\u201d,\u00a0\u5e73\u621030\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u4e5d\u5dde\u5927\u5b66\u4f0a\u90fd\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670814\u65e5~16\u65e5<\/li>\n<li>\u8c4a\u7530\u5927\u6643,\u78ef\u90e8\u9ad8\u7bc4,\u53ea\u91ce\u535a,&#8221;\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u7528\u3044\u305f\u96fb\u5727\u578b\u4e09\u76f8\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u5b9f\u6a5f\u691c\u8a3c&#8221;,\u5e73\u621030\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u4e5d\u5dde\u5927\u5b66\u4f0a\u90fd\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670814\u65e5~16\u65e5<\/li>\n<li>\u9d28\u5fd7\u7530\u76f4\u6a39, \u98ef\u5d8b\u7adc\u53f8, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201cSJ-MOSFET\u3092\u9069\u7528\u3057\u305fQZSI\u306e\u56de\u8def\u65b9\u5f0f\u30fb\u30c7\u30d0\u30a4\u30b9\u9593\u3067\u306e\u640d\u5931\u8a55\u4fa1\u201d,\u00a0\u5e73\u621030\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u4e5d\u5dde\u5927\u5b66\u4f0a\u90fd\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670814\u65e5~16\u65e5<\/li>\n<li>\u5317\u5cf6\u9b41\u4eba, \u5ca1\u672c\u5927, \u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78, \u201c\u30e1\u30bf\u30eb\u30a2\u30cb\u30fc\u30eb\u5de5\u7a0b\u3092\u7701\u3044\u305f4H-SiC\u30a4\u30aa\u30f3\u6ce8\u5165n+\u5c64\u30aa\u30fc\u30df\u30c3\u30af\u30b3\u30f3\u30bf\u30af\u30c8\u5b9f\u73fe\u306e\u691c\u8a0e\u201d,\u00a0\u5e73\u621030\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u4e5d\u5dde\u5927\u5b66\u4f0a\u90fd\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670814\u65e5~16\u65e5<\/li>\n<li>\u5409\u7530\u5343\u6075, \u78ef\u90e8\u9ad8\u7bc4, \u5ca9\u5ba4\u61b2\u5e78, \u53ea\u91ce\u535a, \u201c\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308bSiC-pMOSFET\u306e\u6027\u80fd\u306b\u5bfe\u3059\u308b\u96fb\u5727\u5229\u7528\u7387\u306e\u691c\u8a0e\u201d,\u00a0\u5e73\u621030\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u4e5d\u5dde\u5927\u5b66\u4f0a\u90fd\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670814\u65e5~16\u65e5<\/li>\n<li>\u5468\u661f\u708e, \u5ca1\u672c\u5927, \u7560\u5c71\u54f2\u592b, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u5510\u672c\u7950\u6a39, \u5f35\u65ed\u82b3, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, \u201cImpact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs\u201d, \u7b2c65\u56de \u5fdc\u7528\u7269\u7406\u5b66\u4f1a \u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u65e9\u7a32\u7530\u5927\u5b66\u897f\u65e9\u7a32\u7530\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670817\u65e5~20\u65e5<\/li>\n<li>\u539f\u7530\u7a63, \u68ee\u672c\u5fe0\u96c4, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u201c\u30de\u30eb\u30c1\u30a8\u30d4\u30bf\u30ad\u30b7\u30e3\u30eb\u578bSiC SJ \u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u96fb\u6c17\u7279\u6027\u306e\u30d7\u30ed\u30bb\u30b9\u4f9d\u5b58\u6027\u201d, \u7b2c65\u56de \u5fdc\u7528\u7269\u7406\u5b66\u4f1a \u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u65e9\u7a32\u7530\u5927\u5b66\u897f\u65e9\u7a32\u7530\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670817\u65e5~20\u65e5<\/li>\n<li>\u6839\u672c\u5b8f\u6a39, \u5ca1\u672c\u5927, \u67d3\u8c37\u6e80, \u6728\u5185\u7950\u6cbb, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78, \u77e2\u91ce\u88d5\u53f8, \u201cp\u30c1\u30e3\u30cd\u30eb4H-SiC MOSFET\u306b\u304a\u3051\u308b\u9178\u5316\u819c\u30ea\u30fc\u30af\u96fb\u6d41\u4f1d\u5c0e\u6a5f\u69cb\u306e\u89e3\u6790\u201d, \u7b2c65\u56de \u5fdc\u7528\u7269\u7406\u5b66\u4f1a \u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u65e9\u7a32\u7530\u5927\u5b66\u897f\u65e9\u7a32\u7530\u30ad\u30e3\u30f3\u30d1\u30b9, 2018\u5e743\u670817\u65e5~20\u65e5<\/li>\n<\/ul>\n<h3>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b<\/h3>\n<ul>\n<li>Noriyuki Iwamuro, \u201cPower Semiconductors Shape up for Future Vehicles\u201d, ASIA ELECTRONICS INDUSTRY, 2017\u5e746\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<li>Junjie An, Masaki namai, Mikiko Tanabe, Dai Okamoto, Hiroshi Yano, and Noriyuki Iwamuro, &#8220;Making a debut: the p-type SiC MOSFET&#8221;, Compound Semiconductor, June, 2017.<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78\u3000\u201d\u65b0\u6750\u6599\u306e\u5b9f\u7528\u5316\u304c\u9032\u3080\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u3000\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u57fa\u790e\u201d, \u96fb\u6c17\u7dcf\u5408\u8a8c\u300c\u30aa\u30fc\u30e0\u3000OHM\u300d1\u6708\u53f7, 2018\u5e741\u67085\u65e5<\/li>\n<\/ul>\n<h3>\u8b1b\u6f14<\/h3>\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u52d5\u5411\u304a\u3088\u3073SiC\/GaN\u7814\u7a76\u958b\u767a\u306e\u6700\u524d\u7dda,&#8221; \u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u30d5\u30a9\u30fc\u30e9\u30e0\u30d1\u30ef\u30a8\u30ec\u9053\u5834, 2017\u5e747\u670819\u65e5<\/li>\n<\/ul>\n<h3>\u66f8\u7c4d<\/h3>\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78\u3000\u76e3\u4fee,\u3000&#8221;SiC\/GaN\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u666e\u53ca\u306e\u30dd\u30a4\u30f3\u30c8&#8221;\uff0cS&amp;T\u51fa\u7248, 2018\u5e741\u670810\u65e5<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"&nbsp; \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 J. An, M. Namai, D. Okamoto, H. Yano, H. Tadano, and N. Iwamuro, &#8220;Investigation of Maxim &#8230;","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/3353"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=3353"}],"version-history":[{"count":106,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/3353\/revisions"}],"predecessor-version":[{"id":5272,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/3353\/revisions\/5272"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=3353"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}