{"id":4193,"date":"2018-05-05T12:20:58","date_gmt":"2018-05-05T03:20:58","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=4193"},"modified":"2020-10-20T17:53:01","modified_gmt":"2020-10-20T08:53:01","slug":"2018%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=4193","title":{"rendered":"2018\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<p>&nbsp;<\/p>\n<h3>\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587<\/h3>\n<ul>\n<li>S. Nomura, and <span style=\"text-decoration: underline;\">T. Isobe<\/span>, &#8220;Design Study on High Frequency Magnets for Magnetic Hyperthermia Applications&#8221;, <em>IEEE Transactions on Applied Superconductivity,<\/em>\u00a0vol. 28, no. 3, pp. 1\u20137, April 2018. <a href=\"https:\/\/doi.org\/10.1109\/TASC.2018.2800056\">DOI:10.1109\/TASC.2018.2800056<\/a><\/li>\n<li><span style=\"color: #000000;\"><span style=\"text-decoration: underline;\">Rene Barrera-Cardenas<\/span>, <span style=\"text-decoration: underline;\">Takanori Isobe<\/span>, Marta Molinas, &#8220;A Meta-Parameterized Approach for the Evaluation of Semiconductor Technologies,&#8221; <em>IEEJ Journal of Industry Applications<\/em>, Vol. 7, No. 3, pp. 210\u2013217, <a href=\"https:\/\/doi.org\/10.1541\/ieejjia.7.210\">DOI:10.1541\/ieejjia.7.210<\/a>\u00a0(2018)<\/span><\/li>\n<li><span style=\"color: #000000;\">\u9d28\u5fd7\u7530 \u76f4\u6a39, \u98ef\u5d8b \u7adc\u53f8, \u78ef\u90e8 \u9ad8\u7bc4, \u53ea\u91ce \u535a, &#8220;Superjunction-MOSFET\u3092\u7528\u3044\u305f\u6e96Z\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u640d\u5931\u89e3\u6790&#8221;, \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8c\uff24\uff08\u7523\u696d\u5fdc\u7528\u90e8\u9580\u8a8c\uff09, Vol. 138. No. 5, pp. 463\u2013470, <a href=\"https:\/\/doi.org\/10.1541\/ieejias.138.463\">DOI: 10.1541\/ieejias.138.463<\/a> (2018)<\/span><\/li>\n<li><span style=\"text-decoration: underline;\">X. Zhang<\/span>, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, T. Hatakeyama, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, &#8220;Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors&#8221;, <em>Jpn. J. Appl. Phys.,<\/em> vol. 57, no. 6S3, p. 06KA04, May 2018. <a href=\"https:\/\/doi.org\/10.7567\/JJAP.57.06KA04\">DOI:10.7567\/JJAP.57.06KA04<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">Y. Karamoto<\/span>, <span style=\"text-decoration: underline;\">X. Zhang<\/span>, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, M. Sometani, T. Hatakeyama, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and <span style=\"text-decoration: underline;\">H. Yano<\/span>, &#8220;Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors&#8221;, <em>Jpn. J. Appl. Phys.,<\/em> vol. 57, no. 6S3, p. 06KA06, May 2018. <a href=\"https:\/\/doi.org\/10.7567\/JJAP.57.06KA06\">DOI:10.7567\/JJAP.57.06KA06<\/a><\/li>\n<li>M. Hayashi, M. Sometani, T. Hatakeyama, <span style=\"text-decoration: underline;\">H. Yano<\/span>, and S. Harada,\u00a0\u201cHole Trapping in SiC-MOS Devices Evaluated by Fast-Capacitance-Voltage Method\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 57, No. 4S, 04FR15\/1-4, 2018. DOI: 10.7567\/JJAP.57.04FR15<\/li>\n<li>M. Sometani, M. Okamoto, T. Hatakeyama, Y. Iwahashi, M. Hayashi, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, <span style=\"text-decoration: underline;\">H. Yano<\/span>, S. Harada, Y. Yonezawa, and H. Okumura,\u00a0\u201cAccurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices under Various Gate Bias Stress Conditions\u201d,\u00a0Jpn. J. Appl. Phys., Vol. 57, No. 4S, 04FA07\/1-7, 2018.\u00a0DOI: 10.7567\/JJAP.57.04FR15<\/li>\n<li><span style=\"text-decoration: underline;\">T. Goto<\/span>, <span style=\"text-decoration: underline;\">T. Shirai<\/span>, A. Tokuchi, T. Naito, K. Fukuda, and<span style=\"text-decoration: underline;\"> N. Iwamuro<\/span>, &#8220;Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power,&#8221;<em> Materials Science Forum<\/em>, vol. 924, pp. 858\u2013861, <a href=\"https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.924.858\" target=\"_blank\">DOI:10.4028\/www.scientific.net\/MSF.924.858<\/a>, (2018).<\/li>\n<li>M. Namai, J. An, H. Yano, and N. Iwamuro, &#8220;Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage,&#8221;\u00a0<em>Jpn. J. Appl. Phys.,<\/em> vol. 57,\u00a0 p. 074102, June 2018. <a href=\"https:\/\/doi.org\/10.7567\/JJAP.57.074102\">DOI:10.7567\/JJAP.57.074102<\/a><\/li>\n<li>Naoki Kamoshida, Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, &#8220;Loss analysis of quasi Z-source inverter with Superjunction-MOSFET,&#8221; <em>Electrical Engineering in Japan<\/em>, Vol. 205, Issue 2, pp. 54\u201361 (2018)\u00a0<a href=\"https:\/\/doi.org\/10.1002\/eej.23145\">DOI:10.1002\/eej.23145<\/a><\/li>\n<li>Y. Yamashita, H. Tadano \u201cNumerical modeling of reverse recovery characteristic in silicon pin diodes\u201d, <em>Solis State Electronics<\/em>, 145, pp. 8-18, 2018. <a href=\"https:\/\/doi.org\/10.1016\/j.sse.2018.02.014\">DOI:10.1016\/j.sse.2018.02.014<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">\u9ad9\u6a4b\u52c7\u7d00<\/span>, <span style=\"text-decoration: underline;\">\u98ef\u5d8b\u7adc\u53f8<\/span>, <span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>, <span style=\"text-decoration: underline;\">\u53ea\u91ce\u535a<\/span>, \u5c71\u5d0e\u9577\u6cbb, \u9577\u8c37\u5ddd\u667a\u5b8f, \u201c\u76f4\u5217\u96fb\u5727\u88dc\u511f\u56de\u8def\u306e\u9069\u7528\u306b\u3088\u308b\u30d1\u30eb\u30b9\u96fb\u5727\u767a\u751f\u56de\u8def\u306e\u30b3\u30f3\u30c7\u30f3\u30b5\u9759\u96fb\u5bb9\u91cf\u4f4e\u6e1b\u201d, \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cD\uff08\u7523\u696d\u5fdc\u7528\u90e8\u9580\u8a8c\uff09, Vol. 138, No. 9, pp. 747\u2013755, <a href=\"https:\/\/doi.org\/10.1541\/ieejias.138.747\" target=\"_blank\">DOI:10.1541\/ieejias.138.747<\/a> (2018)<\/li>\n<li>\u5927\u6fa4 \u9806, \u78ef\u90e8\u9ad8\u7bc4, \u53ea\u91ce\u535a, \u201c\u76f4\u5217\u88dc\u511f\u56de\u8def\u3092\u7528\u3044\u305f\u975e\u63a5\u89e6\u7d66\u96fb\u7528\u9ad8\u5468\u6ce2\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u9ad8\u52b9\u7387\u5316\u306e\u63d0\u6848\u3068\u5b9f\u6a5f\u691c\u8a3c\u201d, \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cD\uff08\u7523\u696d\u5fdc\u7528\u90e8\u9580\u8a8c\uff09, Vol. 138, No. 10, pp. 800\u2013809, <a href=\"https:\/\/doi.org\/10.1541\/ieejias.138.800\" target=\"_blank\">DOI:10.1541\/ieejias.138.800<\/a> (2018)<\/li>\n<li><span style=\"text-decoration: underline;\">Yuki Takahashi<\/span>, <span style=\"text-decoration: underline;\">Ryuji Iijima<\/span>, <span style=\"text-decoration: underline;\">Takanori Isobe<\/span>, <span style=\"text-decoration: underline;\">Hiroshi Tadano<\/span>, Choji Yamazaki, Chihiro Hasegawa, &#8220;Capacitance reduction of pulse voltage generator by using series voltage compensator&#8221; <em>Electrical Engineering in Japan<\/em>, Volume 206, Issue 3, pp. 40\u201350 (2019)\u00a0<a href=\"https:\/\/doi.org\/10.1002\/eej.23189\">DOI:10.1002\/eej.23189<\/a><\/li>\n<li>Jun Osawa, Takanori Isobe, Hiroshi Tadano, &#8220;Efficiency improvement of high\u2010frequency inverter for wireless power transfer system using series compensator&#8221; <em>Electrical Engineering in Japan<\/em>, Volume 206, Issue 3, pp. 51-61 (2019)\u00a0<a href=\"https:\/\/doi.org\/10.1002\/eej.23192\">DOI:10.1002\/eej.23192<\/a><\/li>\n<li>\u5c71\u91ce\u5bfa \u5927\u5730, \u98ef\u5d8b \u7adc\u53f8, \u78ef\u90e8 \u9ad8\u7bc4, \u53ea\u91ce \u535a, \u201cGaN-HEMT\u30c7\u30d0\u30a4\u30b9\u3092\u7528\u3044\u305f\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306eMHz\u904b\u8ee2\u306b\u304a\u3051\u308b\u52d5\u4f5c\u691c\u8a3c\u304a\u3088\u3073\u640d\u5931\u306e\u89e3\u6790\u201d, \u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8cD\uff08\u7523\u696d\u5fdc\u7528\u90e8\u9580\u8a8c\uff09, Vol. 139, No. 3, pp. 249-257, <a href=\"https:\/\/doi.org\/10.1541\/ieejias.139.249\" target=\"_blank\">DOI:10.1541\/ieejias.139.249<\/a> (2019)<\/li>\n<li>E. Fujita, M. Sometani, T. Hatakeyama, S. Harada, <span style=\"text-decoration: underline;\">H. Yano<\/span>, T. Hosoi, T. Shimura, and H. Watanabe,\u00a0\u201cInsight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements\u201d,\u00a0AIP Adv., Vol. 8, No. 8, 085305\/1-6, 2018.\u00a0DOI: 10.1063\/1.5034048<\/li>\n<li>T. Hatakeyama, T. Masuda, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, <span style=\"text-decoration: underline;\">H. Yano<\/span>, Y. Yonezawa, and H. Okumura,\u00a0\u201cImpact of crystal faces of 4H-SiC in SiO2\/4H-SiC structures on interface trap densities and mobilities\u201d,\u00a0Appl. Phys. Express, Vol. 12, No. 2, pp.201003\/1-5, 2019.\u00a0https:\/\/doi.org\/10.7567\/1882-0786\/aaf283<\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09<\/h3>\n<ul>\n<li><span style=\"text-decoration: underline;\">J. An<\/span>,\u00a0 <span style=\"text-decoration: underline;\">M. Namai<\/span>, <span style=\"text-decoration: underline;\">H. Yano<\/span>, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, Y. Kobayashi, S. Harada, &#8220;Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs,&#8221; <em>in Proceedings of\u00a0International Symposium on Power Semiconductor Devices &amp; ICs (IEEE ISPSD) 2018<\/em>, pp. 391-394, May, Chicago (USA).<\/li>\n<li><span style=\"text-decoration: underline;\">R. Barrera-Cardenas<\/span>, <span style=\"text-decoration: underline;\">T. Isobe<\/span>, K. Terazono, <span style=\"text-decoration: underline;\">H. Tadano<\/span>, \u201cDesign and Experimental Verification of a DAB Medium Frequency Transformer for a 6.6 kV\/200V Solid State Transformer,\u201d in\u00a0<em>International Power Electronics Conference, IPEC-Niigata 2018 -ECCE Asia-,\u00a0<em>\u00a0<\/em><\/em>May 20-24, 2018, Niigata, Japan, <a href=\"https:\/\/doi.org\/10.23919\/IPEC.2018.8507595\">DOI:10.23919\/IPEC.2018.8507595<\/a>.<\/li>\n<li>Ryuji Iijima, Naoki Kamosihda, Rene Alexander Barrera Cardenas, Takanori Isobe, Hiroshi Tadano,&#8221;Evaluation of Inductor Losses on Z-source Inverter Considering AC and DC Components,&#8221; in\u00a0<em>International Power Electronics Conference, IPEC-Niigata 2018 -ECCE Asia-,\u00a0<em>\u00a0<\/em><\/em>May 20-24, 2018, Niigata, Japan, <a href=\"https:\/\/doi.org\/10.23919\/IPEC.2018.8507925\">DOI:10.23919\/IPEC.2018.8507925<\/a>.<\/li>\n<li>R. Iijima, T. Senanayake, T. Isobe, H. Tadano \u201cDevelopment of Impedance-Source Inverter Using SiC-MOSFET,\u201d in\u00a0<em>International Power Electronics Conference, IPEC-Niigata 2018 -ECCE Asia-,\u00a0<em>\u00a0<\/em><\/em>May 20-24, 2018, Niigata, Japan, <a href=\"https:\/\/doi.org\/10.23919\/IPEC.2018.8507561\">DOI:10.23919\/IPEC.2018.8507561<\/a>.<\/li>\n<li>Yuki Takahashi, Takanori Isobe, Hiroshi Tadano,&#8221;Series Reactive Power Compensator with Reduced Capacitance for Hybrid Transformer,&#8221; in\u00a0<em>International Power Electronics Conference, IPEC-Niigata 2018 -ECCE Asia-,\u00a0<em>\u00a0<\/em><\/em>May 20-24, 2018, Niigata, Japan, <a href=\"https:\/\/doi.org\/10.23919\/IPEC.2018.8507797\">DOI:10.23919\/IPEC.2018.8507797<\/a>.<\/li>\n<li>N. Iwamuro, &#8220;Recent Progress of SiC MOSFET Devices (Planary talk),&#8221; Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM)\u00a02018, July, Beijing (China), 2018.<\/li>\n<li>H. Nemoto, D. Okamoto, M. Sometani, Y. Kiuchi, T. Hatakeyama, S. Harada, N. Iwamuro, H. Yano &#8221; Analysis of leakage current conduction mechanisms in thermally grown oxides on p-channel 4H-SiC MOSFETs &#8221; in <em>European Conference on Silicone Carbide and Related Materials (ECSCRM2018), <\/em>September 2-6, Birmingham (UK).<\/li>\n<li>X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, H. Yano, \u201cMobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements\u201d, <em>European Conference on Silicon Carbide and Related Materials (ECSCRM)<\/em>, Sep 2-6, 2018, Birmingham, UK.<\/li>\n<li>S. T. Senanayake, R. Iijima, T. Isobe, H. Tadano \u201cQuasi Z-source with Single Pulse Drive Inverter for Hybrid\/Electric Vehicles,\u201d in\u00a0<em>20th European Conference on Power Electronics And Applications, EPE2018 -ECCE EUROPE-,\u00a0<em>\u00a0<\/em><\/em>Sep. 17-21, 2018, Riga, Latvia.<\/li>\n<li>R. Iijima, N. Kamoshida, T. Isobe, H. Tadano \u201cLoss analysis of Quasi Z-source Inverter Using Superjunction-MOSFET\u201d in\u00a0<em>20th European Conference on Power Electronics And Applications, EPE2018 -ECCE EUROPE-,\u00a0<em>\u00a0<\/em><\/em>Sep. 17-21, 2018, Riga, Latvia.<\/li>\n<li>S. Ishikawa, T. Isobe, H. Tadano \u201cCurrent imbalance of parallel connected SiC-MOSFET body diodes\u201d in\u00a0<em>20th European Conference on Power Electronics And Applications, EPE2018 -ECCE EUROPE-,\u00a0<em>\u00a0<\/em><\/em>Sep. 17-21, 2018, Riga, Latvia.<\/li>\n<li>H. Toyoda, M. Terada, R. Iijima, T. Isobe, H. Tadano \u201cSinusoidal Voltage Output Inverter for Motor Drives Using Discontinuous Current Mode,\u201d in\u00a0<span style=\"color: #3b3b3b;\">The Applied Power Electronics Conference and Exposition 2019<\/span><em>, APEC2019,\u00a0<em>\u00a0Mar<\/em><\/em>. 17-21, 2019, Anaheim, USA, <a href=\"https:\/\/doi.org\/10.1109\/APEC.2019.8721883\">DOI:10.1109\/APEC.2019.8721883<\/a>.<\/li>\n<\/ul>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09<\/h3>\n<ul>\n<li>\u8c4a\u7530\u5927\u6643\uff0c\u5bfa\u7530\u967d\uff0c\u98ef\u5d8b\u7adc\u53f8\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u201d\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u30e2\u30fc\u30bf\u99c6\u52d5\u7528\u6b63\u5f26\u6ce2\u96fb\u5727\u51fa\u529b\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u4f50\u8cc0\u770c \u5510\u6d25\u5e02(\u5510\u6d25\u5e02\u6c11\u4ea4\u6d41\u30d7\u30e9\u30b6)\uff0c2018\u5e749\u67086\u65e5\u30fb9\u67087\u65e5.<\/li>\n<li>\u5bfa\u7530\u967d\uff0c\u8c4a\u7530\u5927\u6643\uff0c\u98ef\u5d8b\u7adc\u53f8\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u201d\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u4e09\u76f8\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u5236\u5fa1\u6cd5\u306b\u95a2\u3059\u308b\u5b9f\u9a13\u7684\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u4f50\u8cc0\u770c \u5510\u6d25\u5e02(\u5510\u6d25\u5e02\u6c11\u4ea4\u6d41\u30d7\u30e9\u30b6)\uff0c2018\u5e749\u67086\u65e5\u30fb9\u67087\u65e5.<\/li>\n<li>\u9ad8\u5d8b\u85ab\uff0c\u98ef\u5d8b\u7adc\u53f8\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u201dZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u8ca0\u8377\u77ed\u7d61\u6642\u306e\u96fb\u6d41\u906e\u65ad\u80fd\u529b\u306e\u691c\u8a0e\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u4f50\u8cc0\u770c \u5510\u6d25\u5e02(\u5510\u6d25\u5e02\u6c11\u4ea4\u6d41\u30d7\u30e9\u30b6)\uff0c2018\u5e749\u67086\u65e5\u30fb9\u67087\u65e5.<\/li>\n<li>\u85e4\u7530\u6804\u609f, \u7d30\u4e95\u5353\u6cbb, \u67d3\u2f95\u6e80, \u7560\u2f2d\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>, \u5fd7\u6751\u8003\u529f, \u6e21\u90e8\u5e73\u53f8,\u00a0\u300cBa\u6dfb\u52a0\u306b\u3088\u308bSiC MOSFET\u7279\u6027\u5411\u4e0a\u306e\u8d77\u6e90\u306e\u691c\u8a0e\u300d,\u00a0\u7b2c79\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834, 20A-141-3, p.13-172, 2018\/9\/20. (9\/18-21)<\/li>\n<li>\u67d3\u2f95\u6e80, \u7d30\u4e95\u5353\u6cbb, \u7560\u2f2d\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>, \u5fd7\u6751\u8003\u529f, \u6e21\u90e8\u5e73\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143,\u00a0\u300c\u4f4e\u4e0d\u7d14\u7269\u6fc3\u5ea64H-SiC(0001)\u57fa\u677f\u4e0a\u306b\u4f5c\u88fd\u3057\u305fMOSFET\u306e\u30db\u30fc\u30eb\u52b9\u679c\u79fb\u52d5\u5ea6\u306b\u5bfe\u3059\u308bNO-POA\u306e\u5f71\u97ff\u300d,\u00a0\u7b2c79\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834, 20a-141-2, p.13-171, 2018\/9\/20. (9\/18-21)<\/li>\n<li>\u6b66\u7530\u7d18\u5178, \u67d3\u8c37\u6e80\uff0c\u7d30\u4e95\u5353\u6cbb\uff0c\u5fd7\u6751\u8003\u529f\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>\uff0c\u6e21\u90e8\u5e73\u53f8,\u00a0\u300c4H-SiC(0001) MOSFET\u306e\u53ef\u52d5\u96fb\u5b50\u5bc6\u5ea6\u306e\u6e29\u5ea6\u4f9d\u5b58\u6027\u306b\u57fa\u3065\u304f\u30c1\u30e3\u30cd\u30eb\u5185\u96fb\u5b50\u4f1d\u5c0e\u6a5f\u69cb\u306e\u8003\u5bdf\u300d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IA-15, pp.97-98, 2018\/11\/6. (11\/6-7)<\/li>\n<li><span style=\"text-decoration: underline;\">\u5468\u661f\u708e<\/span>\uff0c<span style=\"text-decoration: underline;\">\u5ca1\u672c\u5927<\/span>\uff0c\u7560\u5c71\u54f2\u592b\uff0c\u67d3\u8c37\u6e80\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u5ca1\u672c\u5149\u592e\uff0c<span style=\"text-decoration: underline;\">\u5f35\u65ed\u82b3<\/span>\uff0c<span style=\"text-decoration: underline;\">\u5ca9\u5ba4\u61b2\u5e78<\/span>\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>\uff0c\u201cHall\u52b9\u679c\u6e2c\u5b9a\u306b\u3088\u308bp\u30c1\u30e3\u30cd\u30eb4H-SiC MOSFET\u306e\u30c1\u30e3\u30cd\u30eb\u8f38\u9001\u6a5f\u69cb\u306e\u89e3\u660e\u201d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IA-17, pp.101-102, 2018\/11\/6. (11\/6-7)<\/li>\n<li><span style=\"text-decoration: underline;\">\u6839\u672c\u5b8f\u6a39<\/span>\uff0c<span style=\"text-decoration: underline;\">\u5ca1\u672c\u5927<\/span>\uff0c\u67d3\u8c37\u6e80\uff0c\u6728\u5185\u7950\u6cbb\uff0c\u5ca1\u672c\u5149\u592e\uff0c\u7560\u5c71\u54f2\u592b\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c<span style=\"text-decoration: underline;\">\u5ca9\u5ba4\u61b2\u5e78<\/span>\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>\uff0c\u201dp\u30c1\u30e3\u30cd\u30eb4H-SiC MOSFET\u306b\u304a\u3051\u308b\u9178\u5316\u819c\u30ea\u30fc\u30af\u96fb\u6d41\u4f1d\u5c0e\u6a5f\u69cb\u306e\u89e3\u6790\u201d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IA-19, pp.105-106, 2018\/11\/6. (11\/6-7)<\/li>\n<li>\u67d3\u8c37\u6e80, \u7d30\u4e95\u5353\u6cbb, \u5e73\u4e95\u60a0\u4e45, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>, \u5fd7\u6751\u8003\u529f, \u6e21\u90e8\u5e73\u53f8, \u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143,\u00a0\u300c\u8d85\u4f4e\u5b9f\u52b9p\u30a8\u30d4\u6fc3\u5ea6\u57fa\u677f\u3092\u7528\u3044\u3066\u8a55\u4fa1\u3057\u305f4H-SiC(0001) MOSFET\u306e\u53cd\u8ee2\u30c1\u30e3\u30cd\u30eb\u96fb\u5b50\u306e\u6563\u4e71\u8981\u56e0\u300d,\u00a0\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IIA-22, pp.225-226, 2018\/11\/7. (11\/6-7)<\/li>\n<li>\u7560\u5c71\u54f2\u592b, \u5897\u7530\u5065\u826f\uff0c\u67d3\u8c37\u6e80\uff0c<span style=\"text-decoration: underline;\">\u5ca1\u672c\u5927<\/span>\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>\uff0c\u7c73\u6fa4\u559c\u5e78, \u5965\u6751\u5143,\u00a0\u300cSiO2\/SiC\u754c\u9762\u306e\u79fb\u52d5\u5ea6\u53ca\u3073\u4f1d\u5c0e\u5e2f\u8fd1\u508d\u306e\u754c\u9762\u6e96\u4f4d\u5bc6\u5ea6\u306b\u5bfe\u3059\u308b\u9762\u65b9\u4f4d\u306e\u52b9\u679c\u300d,\u00a0\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IIA-23, pp.227-228, 2018\/11\/7. (11\/6-7)<\/li>\n<li>\u672c\u7530\u9054\u4e5f\uff0c\u77e2\u91ce\u88d5\u53f8,\u00a0\u300cn\u578bSi\u97624H-SiC MOSFET\u306e\u95be\u5024\u96fb\u5727\u3068Hall\u79fb\u52d5\u5ea6\u306e\u6e29\u5ea6\u7279\u6027\u300d,\u00a0\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IIA-24, pp.229-230, 2018\/11\/7. (11\/6-7)<\/li>\n<li>\u5ca1\u672c\u5149\u592e\uff0c\u67d3\u8c37\u6e80\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c<span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>\uff0c\u5965\u6751\u5143,\u00a0\u300c4H-SiC MOSFET\u306e\u3057\u304d\u3044\u5024\u96fb\u5727\u4e0d\u5b89\u5b9a\u6027\u3092\u5f15\u304d\u8d77\u3053\u3059\u9178\u5316\u819c\u30c8\u30e9\u30c3\u30d7\u306e\u7a7a\u9593\u5206\u5e03\u300d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c5\u56de\u8b1b\u6f14\u4f1a, \u4eac\u90fd\u30c6\u30eb\u30b5,\u3000IIB-20, pp.281-282, 2018\/11\/7. (11\/6-7)<\/li>\n<li>\u8a31 \u822a\uff0c\u91ce\u6751 \u65b0\u4e00\uff0c<span style=\"text-decoration: underline;\">\u78ef\u90e8 \u9ad8\u7bc4<\/span>\uff0c&#8221;\u30cf\u30a4\u30d1\u30fc\u30b5\u30fc\u30df\u30a2\u7528\u9ad8\u5468\u6ce2\u96fb\u78c1\u77f3\u8a66\u4f5c\u6a5f\u306e\u76f4\u6d41\u52b1\u78c1\u7d50\u679c\u53ca\u3073\u30a4\u30f3\u30d4\u30fc\u30c0\u30f3\u30b9\u306e\u5468\u6ce2\u6570\u7279\u6027&#8221;\uff0c2018\u5e74\u5ea6\u79cb\u5b63\u4f4e\u6e29\u5de5\u5b66\u30fb\u8d85\u96fb\u5c0e\u5b66\u4f1a\uff0c\u5c71\u5f62\u30c6\u30eb\u30b5\uff0c2018\u5e7411\u670819\u65e5~21\u65e5<\/li>\n<li>\u5f35\u5263\u97dc\uff0c\u5bfa\u7530\u967d\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\u3000\u201c\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u5358\u76f8\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u96fb\u6d41\u6b6a\u307f\u6539\u5584\u306e\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5bb6\u96fb\/\u6c11\u751f\/\u81ea\u52d5\u8eca\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u7b51\u6ce2\u5927\u5b66\uff0c2018\u5e7412\u67086\u65e5\u30fb12\u67087\u65e5<\/li>\n<li>\u67f3\u6fa4\u4f51\u592a\uff08\u5927\u962a\u5927\u5b66\uff09\uff0c\u6851\u539f\u514b\u548c\uff0c\u4e09\u8f2a\u660e\u5bdb\uff08\u9996\u90fd\u5927\u5b66\u6771\u4eac\uff09\uff0c\u5c0f\u6797\u5b8f\u6cf0\uff08\u5343\u8449\u5927\u5b66\uff09\uff0c<span style=\"text-decoration: underline;\">\u98ef\u5d8b\u7adc\u53f8\uff08\u7b51\u6ce2\u5927\u5b66\uff09<\/span>\uff0c\u5c71\u53e3\u5927\u8f1d\uff08\u6771\u4eac\u5de5\u696d\u5927\u5b66\uff09\uff0c\u842c\u5e74\u667a\u4ecb\uff08\u6771\u4eac\u7406\u79d1\u5927\u5b66\uff09\uff0c\u5b85\u9593\u6625\u4ecb\uff0c\u6c38\u4e95\u609f\u53f8\uff0c\u897f\u6fa4\u662f\u5442\u4e45\uff0c\u6bd4\u5609\u3000\u96bc\uff0c\u53e4\u5ddd\u5553\u592a\uff08\u9577\u5ca1\u6280\u8853\u79d1\u5b66\u5927\u5b66\uff09\uff0c\u9234\u6728\u4e00\u99ac\uff08\u540d\u53e4\u5c4b\u5de5\u696d\u5927\u5b66\uff09\uff0c\u5c0f\u539f\u79c0\u5dba\uff08\u6a2a\u6d5c\u56fd\u7acb\u5927\u5b66\uff09\uff0c\u201cPh.D. candidates of Power Electronics in Japan (PPEJ) \u306e\u56fd\u969b\u4ea4\u6d41\u6d3b\u52d5 &#8211; Students and Young Engineers Meeting in IPEC-Niigata 2018 \u304b\u3089\u898b\u308b\u82e5\u624b\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u4eba\u6750\u3092\u53d6\u308a\u5dfb\u304f\u74b0\u5883 -\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5948\u826f\u770c\u3000\u5948\u826f\u5b66\u5712\u5927\u5b66\u3000\u767b\u7f8e\u30f6\u4e18\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2019\u5e741\u670825\u65e5\u30fb1\u670826\u65e5<\/li>\n<li>\u5d8b\u7530\u9686\u4e00, \u201c\u534a\u5c0e\u4f53\u30b9\u30a4\u30c3\u30c1\u3068\u4ea4\u6d41\u906e\u65ad\u5668\u3092\u7528\u3044\u305f\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u76f4\u6d41\u906e\u65ad\u5668\uff08\u4ea4\u6d41\u30b9\u30a4\u30c3\u30c1\u306e\u80fd\u529b\u3092\u6d3b\u304b\u3057\u305f\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u76f4\u6d41\u30b9\u30a4\u30c3\u30c1\uff09\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5948\u826f\u770c\u3000\u5948\u826f\u5b66\u5712\u5927\u5b66\u3000\u767b\u7f8e\u30f6\u4e18\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2019\u5e741\u670825\u65e5\u30fb1\u670826\u65e5<\/li>\n<li><span style=\"text-decoration: underline;\">X. Zhang<\/span>, <span style=\"text-decoration: underline;\">D. Okamoto<\/span>, T. Hatakeyama, M. Sometani, S. Harada, <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, and <span style=\"text-decoration: underline;\">H. Yano<\/span>,\u00a0\u201cInterface Characterization of Nitrided a- and m-Face 4H-SiC MOS Structures Using Distributed Circuit Model\u201d,\u00a0\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a\u3000\uff0d\u6750\u6599\u30fb\u30d7\u30ed\u30bb\u30b9\u30fb\u30c7\u30d0\u30a4\u30b9\u7279\u6027\u306e\u7269\u7406\uff0d \u7b2c24\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, P-27, pp.221-224, 2019\/1\/25. (1\/25-26).<\/li>\n<li>\u6b66\u7530\u7d18\u5178, \u67d3\u8c37\u6e80, \u7d30\u4e95\u5353\u6cbb, \u5fd7\u6751\u8003\u529f, <span style=\"text-decoration: underline;\">\u77e2\u91ce\u88d5\u53f8<\/span>, \u6e21\u90e8\u5e73\u53f8,\u00a0\u300c\u6e29\u5ea6\u53ef\u5909\u30db\u30fc\u30eb\u52b9\u679c\u6e2c\u5b9a\u306b\u3088\u308b4H-SiC(0001) MOSFET\u30c1\u30e3\u30cd\u30eb\u5185\u96fb\u5b50\u4f1d\u5c0e\u6a5f\u69cb\u306e\u8003\u5bdf\u300d,\u00a0\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a\u3000\uff0d\u6750\u6599\u30fb\u30d7\u30ed\u30bb\u30b9\u30fb\u30c7\u30d0\u30a4\u30b9\u7279\u6027\u306e\u7269\u7406\uff0d \u7b2c24\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, P-28, pp.225-228, 2019\/1\/25. (1\/25-26).<\/li>\n<li>\u53ea\u91ce\u535a, \u201c\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u30dc\u30c7\u30a3\u30fc\u30c0\u30a4\u30aa\u30fc\u30c9\u8ab2\u984c\u306b\u5bfe\u3059\u308b\u56de\u8def\u6280\u8853\u201d, \u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u7b2c13\u56de\u7814\u7a76\u4f1a, \u6885\u7530\u30b9\u30ab\u30a4\u30d3\u30eb36\u968e \u30b9\u30da\u30fc\u30b936L, 2019 \u5e742 \u670827 \u65e5<\/li>\n<li>W. Fu, A. Ueda, <span style=\"text-decoration: underline;\">H. Yano<\/span>, S. Harada, and T. Sakurai,\u00a0\u201cInfluence of biaxial stress on the electron transport properties at SiO2\/4H-SiC interfaces\u201d,\u00a0\u7b2c66\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6771\u4eac\u5de5\u696d\u5927\u5b66\u3000\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9, 9a-PB3-11, p.12-037, 2019\/3\/9. (3\/9-3\/12)<\/li>\n<li>\u5d8b\u7530\u9686\u4e00, \u201c\u4ea4\u6d41\u906e\u65ad\u5668\u3092\u6d3b\u7528\u3057\u305f\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u76f4\u6d41\u906e\u65ad\u5668\u201d, \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u8a31\u822a, \u91ce\u6751\u65b0\u4e00, <span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>,\u00a0 \u201c\u30cf\u30a4\u30d1\u30fc\u30b5\u30fc\u30df\u30a2\u7528\u9ad8\u5468\u6ce2\u96fb\u78c1\u77f3\u306e\u30b3\u30a4\u30eb\u914d\u7f6e\u3068\u81ea\u5df1\u30a4\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u7279\u6027\u201d, \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u5409\u7530\u5b8f\u4e00, <span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>, \u67f3\u539f\u82f1\u4eba, &#8220;\u6570MHz\u9818\u57df\u3067\u306e\u9ad8\u5468\u6ce2\u78c1\u6c17\u7279\u6027\u6e2c\u5b9a\u3092\u53ef\u80fd\u306b\u3059\u308b\u52b1\u78c1\u7528\u30bd\u30ec\u30ce\u30a4\u30c9\u30b3\u30a4\u30eb\u306e\u958b\u767a\u201d, \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u5f35\u5263\u97dc\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u2018\u2018\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u5358\u76f8\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u4f4e\u6b21\u9ad8\u8abf\u6ce2\u6b6a\u307f\u4f4e\u6e1b\u6cd5\u306e\u63d0\u6848\u3068\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u9ad8\u5d8b\u85ab\uff0c\u98ef\u5d8b\u7adc\u53f8\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u201dZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u8ca0\u8377\u77ed\u7d61\u3092\u8003\u616e\u3057\u305f\u30a4\u30f3\u30d4\u30fc\u30c0\u30f3\u30b9\u30bd\u30fc\u30b9\u306e\u8a2d\u8a08\u201d\uff0c\u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5~14\u65e5<\/li>\n<li>\u5927\u5ddd\u96c5\u8cb4\uff0c\u98ef\u5d8b\u7adc\u53f8\uff0c\u5ca1\u672c\u5927\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018SiC MOSFET\u306e\u8ca0\u8377\u77ed\u7d61\u8a66\u9a13\u306b\u304a\u3051\u308b\u30b2\u30fc\u30c8\u6f0f\u308c\u96fb\u6d41\u3068\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u306e\u8a55\u4fa1\u89e3\u6790\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4\uff0c\u91d1\u68ee\u5927\u6cb3\uff0c\u5c0f\u6797\u52c7\u4ecb\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u30bf\u30fc\u30f3\u30aa\u30f3\u7279\u6027\u306e\u6e29\u5ea6\u4f9d\u5b58\u6027\u8a55\u4fa1\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u77f3\u5ddd\u6e05\u592a\u90ce\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u201d\u4e26\u5217\u63a5\u7d9a\u3057\u305f\u30c7\u30d0\u30a4\u30b9\u306e\u96fb\u6d41\u30a2\u30f3\u30d0\u30e9\u30f3\u30b9\u306bDC\u30d0\u30b9\u306e\u78c1\u6c17\u7684\u7d50\u5408\u304c\u4e0e\u3048\u308b\u5f71\u97ff\u201d\uff0c\u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u91d1\u68ee\u5927\u6cb3\uff0c\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u306e\u5185\u8535\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u7279\u6027\u89e3\u6790\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u674e\u5922\u7fbd\uff0c \u98ef\u5d8b\u7adc\u53f8\uff0c \u78ef\u90e8\u9ad8\u7bc4\uff0c \u53ea\u91ce\u535a\uff0c\u2018\u2018Q-Z\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u30a4\u30f3\u30c0\u30af\u30bf\u96fb\u6d41\u30ea\u30d7\u30eb\u4f4e\u6e1b\u3068\u30a4\u30f3\u30c0\u30af\u30bf\u306e\u5c0f\u578b\u5316\u3092\u53ef\u80fd\u3068\u3059\u308b\u65b0\u3057\u3044\u5909\u8abf\u6cd5\u306e\u691c\u8a3c\u201d\uff0c \u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u59da\u51f1\u502b\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018Investigation of Unclamped Inductive Switching Capability of Silicon Carbide MOSFETs\u201d\uff0c\u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<li>\u79cb\u5e83\u5143\u8f1d\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c\u2018\u2018\u77ac\u6642\u96fb\u529b\u5236\u5fa1\u306b\u3088\u308bSolid-State Transformer\u306e\u30b3\u30f3\u30c7\u30f3\u30b5\u306e\u5c0f\u578b\u5316\u201d\uff0c\u5e73\u621031\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, \u5317\u6d77\u9053\u79d1\u5b66\u5927\u5b66, 2019\u5e743\u670812\u65e5\uff5e14\u65e5<\/li>\n<\/ul>\n<h3>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b<\/h3>\n<ul>\n<li>Noriyuki Iwamuro, \u201cLow-cost SiC-MOSFETs poise for global adoption\u201d, ASIA ELECTRONICS INDUSTRY, 2018\u5e749\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<li><span style=\"text-decoration: underline;\">Ryuji Iijima<\/span>, Yoshikazu Kuwabara, Daiki Yamaguchi, Yuta Yanagisawa, Yoshihiro Miwa, Hidemine Obara, and Yongheng Yang, \u201cStudents and Young Engineers Meeting Held at IPEC 2018-ECCE Asia \u201d, <em>IEEE Power Electronics Magazine<\/em>, vol. 5, no. 3, pp. 93-94, Sept. 2018. <a href=\"http:\/\/ieeexplore.ieee.org\/stamp\/stamp.jsp?tp=&amp;arnumber=8458257&amp;isnumber=8458270\">DOI:10.1109\/MPEL.2018.2852438<\/a><\/li>\n<li>Noriyuki Iwamuro, &#8220;innovations Find Optimal Materials, Structure for Power Device,&#8221; ASIA ELECTRONICS INDUSTRY, 2018\u5e7411\u6708\u53f7 \u96fb\u6ce2\u65b0\u805e\u793e<\/li>\n<\/ul>\n<h3>\u8b1b\u6f14<\/h3>\n<ul>\n<li>\u5ca9\u5ba4\u61b2\u5e78,&#8221;\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u52d5\u5411\u304a\u3088\u3073SiC\/GaN\u7814\u7a76\u958b\u767a\u306e\u6700\u524d\u7dda,&#8221; \u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u30d5\u30a9\u30fc\u30e9\u30e0\u30d1\u30ef\u30a8\u30ec\u9053\u5834, 2018\u5e747\u670819\u65e5<\/li>\n<li>Noriyuki Iwamuro, &#8220;State-of-the-art and Future Prospective of Si-IGBT Technologies,&#8221; The 4th Int. Academic Forum of China IGBT Technology Innovation and Industry Alliance (2018.11.6, Zhuzhou, China)<\/li>\n<li>\u5ca9\u5ba4\u61b2\u5e78, &#8220;\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u201d\u3000GaN\u7814\u7a76\u30b3\u30f3\u30bd\u30fc\u30b7\u30a2\u30e0\u3000\u7b2c3\u56de\u30b9\u30d7\u30ea\u30f3\u30b0\u30b9\u30af\u30fc\u30eb\u8b1b\u7fa9, \u540d\u53e4\u5c4b\u5927\u5b66, 2019\u5e743\u670826\u65e5<\/li>\n<\/ul>\n<h3>\u66f8\u7c4d<\/h3>\n<ul>\n<li>\u96fb\u6c17\u5b66\u4f1a\u6280\u8853\u5831\u544a\u3000&#8221;\u30b7\u30ea\u30b3\u30f3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30fb\u30d1\u30ef\u30fcIC\u306e\u66f4\u306a\u308b\u9032\u5316\u304a\u3088\u3073\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u9032\u5c55&#8221;\uff0c\u96fb\u6c17\u5b66\u4f1a\u30b7\u30ea\u30b3\u30f3\u306a\u3089\u3073\u306b\u65b0\u6750\u6599\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30fb\u30d1\u30ef\u30fcIC\u6280\u8853\u8abf\u67fb\u5c02\u9580\u59d4\u54e1\u4f1a\uff08\u59d4\u54e1\u9577\uff1a\u5ca9\u5ba4\u61b2\u5e78\uff09\uff0c\u7b2c1420\u53f7, 2018\u5e744\u670825\u65e5\u767a\u884c<\/li>\n<li>Noriyuki Iwamuro, Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications, Edited by B. Jayant Baliga, Chapter 4: SiC power device design and fabrication, p.79-p.150, ELSEVIER,\u00a02018.10.<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"&nbsp; \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 S. Nomura, and T. Isobe, &#8220;Design Study on High Frequency Magnets for Magnetic Hypertherm &#8230;","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/4193"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=4193"}],"version-history":[{"count":135,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/4193\/revisions"}],"predecessor-version":[{"id":5268,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/4193\/revisions\/5268"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=4193"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}