{"id":4729,"date":"2019-05-24T16:27:06","date_gmt":"2019-05-24T07:27:06","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=4729"},"modified":"2020-10-20T17:26:30","modified_gmt":"2020-10-20T08:26:30","slug":"2019%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=4729","title":{"rendered":"2019\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"

\u8457\u8005\u306b\u4e0b\u7dda<\/span>\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005<\/span>\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002<\/p>\n

\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n
    \n
  1. Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, “Optimized Short-Through Time Distribution for Inductor Current Ripple Reduction in Z-Source Inverters Using Space-Vector Modulation” IEEE Transactions on Industry Applications<\/em>, Vol. 55, No. 3, pp. 2922-2930, May-June 2019,\u00a0 DOI:10.1109\/TIA.2019.2898848<\/a><\/li>\n
  2. Yushi Koyama, Takanori Isobe<\/span>, “Current control of modular multilevel converters with phase\u2010shifted pwm using a daisy\u2010chained distributed control system,” IEEJ Transactions on Electrical and Electronic Engineering<\/em>, Vol. 14, No. 7, pp. 1095-1104, July 2019. DOI:10.1002\/tee.22905<\/a><\/li>\n
  3. Masataka Okawa<\/span>, Ruito Aiba<\/span>, Taiga Kanamori<\/span>, Yusuke Kobayashi, Shinsuke Harada, Hiroshi\u00a0Yano<\/span>, and Noriyuki Iwamuro<\/span>, “<\/a>First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS,” IEEE Journal of Electron Devices Society, <\/em>vol.7, pp.613-620, 2019, DOI:10.1109\/JEDS.2019.2917563<\/a>.<\/li>\n
  4. Noriyuki Iwamuro, “Recent Progress of SiC MOSFET Devices,” Material Science Forum<\/em>, vol. 954, pp.90-98, 2019.<\/li>\n
  5. H. Shimizu<\/span>, N. Watanabe, T. Morikawa, A. Shima, and N. Iwamuro<\/span>, “1.2 kV SiC SBD-embedded MOSFET\u00a0with extension structure and titanium-based single contact,” Japanese Journal of Applied Physics<\/em>, DOI: 10.7567\/1347-4065\/ab65a5<\/a>.<\/li>\n
  6. Y. Kagoyama, M. Okamoto, T. Yamasaki, N. Tajima, J. Nara, T. Ohno, H. Yano<\/span>, S. Harada, and T. Umeda,\u00a0\u201cAnomalous carbon clusters in 4H-SiC\/SiO2 interfaces\u201d\u00a0J. Appl. Phys., Vol. 125, No. 6, 065302\/1-8, 2019.\u00a0https:\/\/doi.org\/10.1063\/1.5066356<\/li>\n
  7. T. Masuda, T. Hatakeyama, S. Harada, and H. Yano<\/span>,\u00a0\u201cDemonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2<\/sub>\/SiC (0-33-8) interfaces\u201d Jpn. J. Appl. Phys., Vol. 58, No. SB, SBBD04\/1-5, 2019.\u00a0https:\/\/doi.org\/10.7567\/1347-4065\/aafb55<\/li>\n
  8. W. Fu, A. Kobayashi, H. Yano<\/span>, A. Ueda, S. Harada, and T. Sakurai,\u00a0\u201cInvestigation of stress at SiO2\/4H-SiC interface induced by thermal oxidation by confocal Raman microscopy\u201d Jpn. J. Appl. Phys., Vol. 58, No. SB, SBBD03\/1-5, 2019. https:\/\/doi.org\/10.7567\/1347-4065\/aafd93<\/li>\n
  9. M. Sometani, T. Hosoi, H. Hirai, T. Hatakeyama, S. Harada, H. Yano<\/span>, T. Shimura, H. Watanabe, Y. Yonezawa, and H. Okumura,\u00a0\u201cIdeal phonon-scattering-limited mobility in inversion channel of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations\u201d Appl. Phys. Lett., Vol. 115, No. 13, 132102\/1-5, 2019.\u00a0DOI: 10.1063\/1.5115304<\/li>\n
  10. T. Umeda, T. Kobayashi, M. Sometani, H. Yano<\/span>, Y. Matsushita, and S. Harada,\u00a0\u201cCarbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)\/SiO2 interface \u201d Appl. Phys. Lett., Vol. 116, No. 7, 071604\/1-5, 2020.\u00a0DOI: 10.1063\/1.5143555<\/li>\n
  11. T. Ohashi<\/span>, R. Iijima, and H. Yano<\/span>, “Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility,” Japanese Journal of Applied Physics<\/em>,\u00a0Vol. 59, No. 3, pp. 034003-1 -10, 2020\u00a0DOI: 10.35848\/1347-4065\/ab755a<\/a>.<\/li>\n<\/ol>\n

    \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings – International)<\/h3>\n
      \n
    1. H. Zhang, R. Barrera-Cardenas, R. Iijima, T. Isobe, H. Tadano, “Passive Components Size Reduction in Solid-State Transformers for EV Fast Charging System,” in the 3rd IEEE International Conference on DC Microgrids (ICDCM2019)<\/em>, May 20-23, Matsue, Japan.<\/li>\n
    2. N. Iwamuro, “Recent Progress of SiC-MOSFETs and Their Futures(Invited),” in Proc. Inter. Conf. on Electronic Packageing 2019<\/em>, Apr. 2019, FA2-3, pp.260-264.<\/li>\n
    3. N. Iwamuro, “Recent Progress of SiC-MOSFETs and Competition with state-of-the-art Si-IGBTs (Keynote Speech),”\u00a0WiPDA-Asia<\/em> 2019<\/em>, Taipei, May. 2019.<\/li>\n
    4. Kailun Yao, Hiroshi Yano, and Noriyuki Iwamuro \u201dInvestigation of UIS Capability for -600V Class Vertical SiC p-channel MOSFET,” in Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD)<\/em> 2019, pp. 187-190, May, Shanghai (China).<\/li>\n
    5. Ruito Aiba, Masataka Okawa, Taiga Kanamori, Yusuke Kobayashi, Shinsuke Harada, Hiroshi Yano, and Noriyuki Iwamuro \u201dExperimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS,” in\u00a0Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD)<\/em>\u00a02019, pp. 23-26, May, Shanghai (China).<\/li>\n
    6. Masataka Okawa, Ruito Aiba Taiga Kanamori, Shinsuke Harada, Hiroshi Yano, and Noriyuki Iwamuro \u201dExperimental and Numerical Investigations of Short-Circuit Failure Mechanisms for State-of-the-Art 1.2kV SiC Trench MOSFETs,” in\u00a0Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD)<\/em>\u00a02019, pp. 167-170, May, Shanghai (China).<\/li>\n
    7. J. Zhang, T. Isobe and H. Tadano, “Peak Current Reduction and Zero Cross Distortion Improvement for Discontinuous Current Mode Single Phase Grid-Tied Inverter,” in\u00a0Proceedings of \u00a0EPE’19 ECCE Europe, <\/em>Sep. 2-6, Genova, Italy. DOI: 10.23919\/EPE.2019.8914759<\/a><\/li>\n
    8. Shinichi Nomura, Hang Xu, and Takanori Isobe<\/span>, “Design and Development of a High-Frequency Magnet Prototype for Magnetic Hyperthermia Applications”, The 26th International Conference on Magnet Technology<\/em>, Sep. 22-27, 2019, Vanoauver, Canada.<\/li>\n
    9. W. Fu, A. Ueda, H. Yano<\/span>, S. Harada, T. Sakurai,\u00a0\u201cThe effect of biaxial stress on the carrier-transport properties at SiO2\/4H-SiC interfaces\u201d (Poster),\u00a02019 International Conference on Solid State Devices and Materials (SSDM2019), Nagoya (Japan), PS-4-07, pp.735-736, 2019\/9\/4 (9\/2-5).<\/li>\n
    10. Hironori Takeda, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Hiroshi Yano<\/span>, Heiji Watanabe,\u00a0\u201cInsight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET based on Temperature-dependent Hall Effect Measurement\u201d (Poster), International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto (Japan), Mo-P-29, 2019\/9\/30 (9\/29-10\/4).<\/li>\n
    11. Takahide Umeda, Takuma Kobayashi, Yu-ichro Matsushita, Eito Higa, Hiroshi Yano<\/span>, Mitsuru Sometani, Shinsuke Harada,\u00a0\u201cThe PbC (carbon dangling bond) center at 4H-SiC(0001)\/SiO2 interface: An EDMR study\u201d (Oral),\u00a0International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto (Japan), We-1A-02, 2019\/10\/2 (9\/29-10\/4).<\/li>\n
    12. Eito Higa, Mitsuru Sometani, Shinsuke Harada, Hiroshi Yano<\/span>, Takahide Umeda,\u00a0\u201cElectrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC\/SiO2 interfaces\u201d (Oral),\u00a0International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto (Japan), We-1A-06, 2019\/10\/2 (9\/29-10\/4).<\/li>\n
    13. D. Okamoto, H. Nemoto, X. Zhang, X. Zhou, M. Somenati, M. Okamoto, S. Harada, T. Hatakeyama, N. Iwamuro, and H, Yano, “Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method”,\u00a0International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n
    14. T. Kanamori, R. Aiba, M. Okawa, S. Harada, H. Yano, and N. Iwamuro “Superior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length”, International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.<\/li>\n
    15. X. Zhang, D. Okamoto, M. Sometani, S. Harada, N. Iwamuro, and H. Yano, “Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides”, Oral,\u00a0International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n
    16. X. Zhou, D. Okamoto, X. Zhang, M. Sometani. M. Okamoto, S. Harada, N. Iwamuro, H. Yano, “Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs”, \u00a0International Conference on Silicon Carbide and Related Materials 2019, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n
    17. Y. Matsuya, X. Zhang, D. Okamoto,\u00a0 N. Iwamuro, H. Yano,\u00a0“Analysis of three-level charge pumping characteristics of4H-SiC MOSFETs considering near-interface traps”,\u00a0\u00a0International Conference on Silicon Carbide and Related Materials 2019, Sep. 29-Oct. 4, Kyoto, Japan.<\/span><\/li>\n
    18. H. Nemoto, X. Zhang, D. Okamoto, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada, N. Iwamuro, H. Yano, ” Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias”,International Conference on Silicon Carbide and Related Materials 2019, Sep.29-Oct.4, Kyoto, Japan.<\/li>\n
    19. M. Terada, H. Toyoda,\u00a0R. Iijima,\u00a0T.Isobe and\u00a0H.Tadano,\u00a0 “Control of a Three-Phase Grid-Tied Inverter Designed for Discontinuous Current Mode Operation,”\u00a0in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE) 2019<\/em>,\u00a0Sep. 29-Oct. 3,<\/span>\u00a0Baltimore, U.S.A. DOI: 10.1109\/ECCE.2019.8911896<\/a><\/li>\n
    20. J. Zhang,\u00a0T. Isobe and\u00a0H. Tadano,\u00a0 “Improvements on Harmonic Current Distortion for MHz-Operated Discontinuous Current Mode Single Phase Grid-Tied Inverter with GaN-HEMT Device,”\u00a0in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE) 2019<\/em>,\u00a0Sep. 29-Oct. 3,<\/span>\u00a0Baltimore, U.S.A. DOI: 10.1109\/ECCE.2019.8912886<\/a><\/li>\n
    21. K. Takashima, R. Iijima, T. Mannen, T. Isobe, H. Tadano and N. Iwamuro, “Design Strategy of Z-source Inverter for Utilization of Power Semiconductors with Extremely Low Short-circuit Capability,”\u00a0in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019),<\/em> 14-17 October 2019,\u00a0<\/em>Lisbon, Portugal. DOI: 10.1109\/IECON.2019.8927352<\/a><\/li>\n
    22. M. Akihiro, K. Terazono, T. Isobe, H. Tadano, “Unbalance Load Compensation for Solid-State Transformer Using Smoothing Capacitors of Cascaded H-Bridges as Energy Buffer,”\u00a0in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019),<\/em>\u00a014-17 October 2019,\u00a0<\/em>Lisbon, Portugal. DOI: 10.1109\/IECON.2019.8926611<\/a><\/li>\n
    23. M. Li , R. Iijima, T. Mannen, T. Isobe, and H. Tadano, “New Modulation Strategy for Volume Reduction of Inductor for q-Z-source Inverter,”\u00a0in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019),<\/em>\u00a014-17 October 2019,\u00a0<\/em>Lisbon, Portugal. DOI: 10.1109\/IECON.2019.8927840<\/a><\/li>\n
    24. N. Iwamuro, “Power Semicouductor Devices and Their Futures,” Int. Symp. Semiconductor Technology Innovation for Next Distinguished Evolutional World 2019, Nagoya, Sept. 2019.<\/li>\n
    25. D. Tochigi, K. Takashima, T. Isobe, H. Tadano and T. Mannen, “Experimental\u00a0 Verification of a Model of Switching Transients Considering Device Parasitic Capacitance for the Loss Estimation of Soft-switching Power Converters,”\u00a04th IEEE International Future Energy Electoronics Cconference\u00a0 (IFEEC 2019)<\/em>,\u00a0\u00a025-28 November 2019,<\/span>\u00a0Singapore. DOI: 10.1109\/IFEEC47410.2019.9015017<\/a><\/li>\n
    26. Wei Fu, Xufang Zhang, Hiroshi Umishio, Aboulaye Traore, Hiroshi Yano<\/span>, Takeaki Sakurai,\u00a0\u201cInfluence of the Annealing Temperature on ALD-Al2O3\/NAOS\/Si MOS Interface Properties\u201d (Poster),\u00a0The 29th International Confrence on Photovoltaic Sciene and Enginnering (PVSEC-29), Xi\u2019an (China), 7MoP.50\/507, pp.1708-1710, 2019\/11\/4 (11\/4-8)<\/li>\n
    27. H. Yano,\u00a0\u201cSiC MOS Interface; What limits the channel mobility\u201d (Oral, Invited),\u00a02019 International Workshop on Dielectric Thin Films for Future Electron Devices – Science and Technology – (2019 IWDTF), Tokyo (Japan), S8-1, pp.112-113, 2019\/11\/20. (11\/18-20).<\/li>\n
    28. Y. Terao, H. Tsuji, T. Hosoi, X. Zhang<\/span>, H. Yano<\/span>, T. Shimura, and H. Watanabe,\u00a0\u201cThe role of oxygen ambient anneal for Ba-incorporated SiO2\/SiC interface\u201d (Poster),\u00a050th IEEE Semiconductor interface Specialist Conference (SISC2019), San Diego (CA, USA), 6.18, 2019\/12\/12. (12\/11-14)<\/li>\n
    29. Hang Xu, Shinichi Nomura, and Takanori Isobe<\/span>, “Experimental Study on the Feasibility of Superconducting High-Frequency Coils for Magnetic Hyperthermia Application”, 10th ACASC\/2nd Asian-ICMC\/CSSJ Joint Conference<\/em>, Jan. 6-9, 2020, Okinawa, Japan.<\/li>\n<\/ol>\n

      \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings – Domestic)<\/h3>\n
        \n
      1. \u8a31 \u822a\uff0c\u91ce\u6751 \u65b0\u4e00\uff0c\u78ef\u90e8 \u9ad8\u7bc4<\/span>\uff0c”\u30cf\u30a4\u30d1\u30fc\u30b5\u30fc\u30df\u30a2\u7528\u9ad8\u5468\u6ce2\u96fb\u78c1\u77f3\u8a66\u4f5c\u6a5f\u306e\u51b7\u5374\u8a2d\u8a08\u304a\u3088\u3073\u76f4\u5217\u5171\u632f\u88dc\u511f\u30ad\u30e3\u30d1\u30b7\u30bf\u30d0\u30f3\u30af\u306e\u8a2d\u8a08”\uff0c2019\u5e74\u6625\u5b63\u4f4e\u6e29\u5de5\u5b66\u30fb\u8d85\u96fb\u5c0e\u5b66\u4f1a\uff0c\u30ce\u30d0\u30db\u30fc\u30eb\u30fb\u3064\u304f\u3070\u30a4\u30ce\u30d9\u30fc\u30b7\u30e7\u30f3\u30d7\u30e9\u30b6\uff0c2019\u5e745\u670828\u65e5~30\u65e5<\/li>\n
      2. \u79cb\u5ee3\u5143\u8f1d\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c”\u30ab\u30b9\u30b1\u30fc\u30c9H\u30d6\u30ea\u30c3\u30b8\u306e\u5e73\u6ed1\u30b3\u30f3\u30c7\u30f3\u30b5\u3092\u30a8\u30cd\u30eb\u30ae\u30fc\u30d0\u30c3\u30d5\u30a1\u3068\u3057\u3066\u7528\u3044\u308bSolid-State Transformer\u306b\u304a\u3051\u308b\u4e0d\u5e73\u8861\u8ca0\u8377\u88dc\u511f\u5236\u5fa1”\uff0c2019\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a<\/em>\uff0c\u9577\u5d0e\u5927\u5b66\uff0c2019\u5e748\u670820\u65e5~22\u65e5<\/li>\n
      3. \u6803\u6728\u5927\u6a39\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\uff0c”\u30bc\u30ed\u96fb\u5727\u30bf\u30fc\u30f3\u30aa\u30f3\u3092\u3059\u308b\u96fb\u529b\u5909\u63db\u5668\u306e\u30e2\u30c7\u30ea\u30f3\u30b0\u306e\u305f\u3081\u306e\u5bc4\u751f\u5bb9\u91cf\u306b\u7740\u76ee\u3057\u305f\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u73fe\u8c61\u306e\u5b9f\u9a13\u7684\u691c\u8a0e”\uff0c2019\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a<\/em>\uff0c\u9577\u5d0e\u5927\u5b66\u30002019\u5e74\uff18\u670820\u65e5~22\u65e5<\/li>\n
      4. \u5f35\u5263\u97dc\uff0c\u5bfa\u7530\u967d\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\u3000\u201c\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u30bd\u30d5\u30c8\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u3092\u76ee\u6307\u3057\u305f\u5236\u5fa1\u6cd5\u306e\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5ca9\u624b\uff0c2019\u5e749\u670812\u65e5\u30fb9\u670813\u65e5<\/li>\n
      5. \u677e\u8c37 \u512a\u6c70\uff0c\u5f35 \u65ed\u82b3\uff0c\u5ca1\u672c \u5927\uff0c\u5ca9\u5ba4 \u61b2\u5e78\uff0c\u77e2\u91ce \u88d5\u53f8\u00a0“\u754c\u9762\u8fd1\u508d\u9178\u5316\u819c\u30c8\u30e9\u30c3\u30d7\u3092\u8003\u616e\u3057\u305f4H-SiC MOSFET \u306e3 \u30ec\u30d9\u30eb\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u7279\u6027\u306e\u89e3\u6790”, 2019\u5e74\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c\u5317\u6d77\u9053\u5927\u5b66,\u00a0 2019\u5e749\u670818\u65e5\uff5e21\u65e5<\/li>\n
      6. \u6839\u672c \u5b8f\u6a39\uff0c\u5ca1\u672c \u5927\uff0c\u5f35 \u65ed\u82b3\uff0c\u67d3\u8c37 \u6e80\uff0c\u5ca1\u672c \u5149\u592e\uff0c\u7560\u5c71 \u54f2\u592b\uff0c\u539f\u7530 \u4fe1\u4ecb\uff0c\u5ca9\u5ba4 \u61b2\u5e78\uff0c\u77e2\u91ce \u88d5\u53f8 “p\u30c1\u30e3\u30cd\u30eb\uff14H-SiC MOSFET\u306b\u304a\u3051\u308b\u9178\u5316\u819c\u6b63\u5b54\u30ea\u30fc\u30af\u96fb\u6d41\u4f1d\u5c0e\u6a5f\u69cb\u306e\u89e3\u6790” \uff0c2019\u5e74\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c\u5317\u6d77\u9053\u5927\u5b66\uff0c 2019\u5e749\u670818\u65e5\uff5e21\u65e5<\/li>\n
      7. \u8fbb\u82f1\u5fb3, \u5bfa\u5c3e\u8c4a, \u7d30\u4e95\u5353\u6cbb, \u5f35\u65ed\u82b3, \u77e2\u91ce\u88d5\u53f8<\/span>, \u5fd7\u6751\u8003\u529f, \u6e21\u90e8\u5e73\u53f8,\u00a0\u300cSiO2\/SiC\u754c\u9762\u96fb\u6c17\u7279\u6027\u306eBa\u5897\u901f\u9178\u5316\u6e29\u5ea6\u4f9d\u5b58\u6027\u300d, 2019\u5e74\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c\u5317\u6d77\u9053\u5927\u5b66\uff0c 2019\u5e749\u670818\u65e5\uff5e21\u65e5<\/li>\n
      8. Wei Fu, Xufang Zhang, Hiroshi Umishio, Aboulaye Traore, Hiroshi Yano<\/span>, Takeaki Sakurai,\u00a0\u201cEffect of annealing temperature on Al2O3\/NAOS\/Si MOS interface properties\u201d,\u00a02019\u5e74\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c\u5317\u6d77\u9053\u5927\u5b66\uff0c 2019\u5e749\u670818\u65e5\uff5e21\u65e5<\/li>\n
      9. \u6839\u672c \u5b8f\u6a39\uff0c\u5ca1\u672c \u5927\uff0c\u5f35 \u65ed\u82b3\uff0c\u67d3\u8c37 \u6e80\uff0c\u5ca1\u672c \u5149\u592e\uff0c\u7560\u5c71 \u54f2\u592b\uff0c\u539f\u7530 \u4fe1\u4ecb\uff0c\u5ca9\u5ba4 \u61b2\u5e78\uff0c\u77e2\u91ce \u88d5\u53f8 “p\u30c1\u30e3\u30cd\u30eb\uff14H-SiC MOSFET\u306b\u304a\u3051\u308b\u9178\u5316\u819c\u6b63\u5b54\u30ea\u30fc\u30af\u96fb\u6d41\u4f1d\u5c0e\u6a5f\u69cb\u306e\u89e3\u6790”\uff0c \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c6\u56de\u8b1b\u6f14\u4f1a\uff0c \u5e83\u5cf6\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2019\u5e7412\u67083\u65e5\uff5e12\u67084\u65e5<\/li>\n
      10. \u5468 \u661f\u708e\uff0c\u5ca1\u672c \u5927\uff0c\u5f35 \u65ed\u82b3\uff0c\u67d3\u8c37 \u6e80\uff0c\u5ca1\u672c \u5149\u592e\uff0c\u7560\u5c71 \u54f2\u592b\uff0c\u539f\u7530 \u4fe1\u4ecb\uff0c\u5ca9\u5ba4 \u61b2\u5e78\uff0c\u77e2\u91ce \u88d5\u53f8\u00a0“p\u30c1\u30e3\u30cd\u30eb\uff14H-SiC MOSFET\u306e\u30c1\u30e3\u30cd\u30eb\u30c9\u30ea\u30d5\u30c8\u79fb\u52d5\u5ea6\u306e\u5c0e\u51fa\u3068\u6563\u4e71\u6a5f\u69cb\u306e\u89e3\u660e”\uff0c \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c6\u56de\u8b1b\u6f14\u4f1a\uff0c \u5e83\u5cf6\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2019\u5e7412\u67083\u65e5\uff5e12\u67084\u65e5<\/li>\n
      11. \u677e\u8c37 \u512a\u6c70\uff0c\u5f35 \u65ed\u82b3\uff0c\u5ca1\u672c \u5927\uff0c\u5ca9\u5ba4 \u61b2\u5e78\uff0c\u77e2\u91ce \u88d5\u53f8\u00a0\u201c\u754c\u9762\u8fd1\u508d\u9178\u5316\u819c\u30c8\u30e9\u30c3\u30d7\u3092\u8003\u616e\u3057\u305f4H-SiC MOSFET \u306e3 \u30ec\u30d9\u30eb\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u7279\u6027\u306e\u89e3\u6790\u201d,\u00a0\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c6\u56de\u8b1b\u6f14\u4f1a\uff0c \u5e83\u5cf6\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2019\u5e7412\u67083\u65e5\uff5e12\u67084\u65e5<\/li>\n
      12. \u5742\u7530\u5927\u8f1d<\/span>, \u5ca1\u672c\u5927<\/span>, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5149\u592e, \u539f\u7530\u4fe1\u4ecb, \u7560\u5c71\u54f2\u592b, \u6839\u672c\u5b8f\u6a39<\/span>, \u5f35\u65ed\u82b3<\/span>, \u5ca9\u5ba4\u61b2\u5e78<\/span>, \u77e2\u91ce\u88d5\u53f8<\/span>, \u300c\u9ad8\u901f\u7de9\u548c\u306a\u3057\u6cd5\u306b\u3088\u308bp\u30c1\u30e3\u30cd\u30eb4H-SiC MOSFET\u306e\u3057\u304d\u3044\u5024\u96fb\u5727\u5909\u52d5\u8a55\u4fa1\u300d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c6\u56de\u8b1b\u6f14\u4f1a\uff0c \u5e83\u5cf6\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2019\u5e7412\u67083\u65e5\uff5e12\u67084\u65e5<\/li>\n
      13. \u6bd4\u5609\u6804\u6597, \u67d3\u8c37\u6e80, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8<\/span>, \u6885\u7530\u4eab\u82f1,\u00a0\u300c4H-SiC Si\u9762\u30fba\u9762\u30fbm\u9762\u754c\u9762\u6b20\u9665\u306e\u96fb\u6d41\u691c\u51fa\u578b\u96fb\u5b50\u30b9\u30d4\u30f3\u5171\u9cf4\u5206\u5149\u6cd5\u306b\u3088\u308b\u8a55\u4fa1\u300d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c6\u56de\u8b1b\u6f14\u4f1a\uff0c \u5e83\u5cf6\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2019\u5e7412\u67083\u65e5\uff5e12\u67084\u65e5<\/li>\n
      14. \u5ca9\u5ba4\u3000\u61b2\u5e78\u3000\u201dSiC-MOSFET\u306e\u8ca0\u8377\u77ed\u7d61\u8010\u91cf\u7279\u6027\u306e\u89e3\u6790\uff08\u62db\u5f85\u8b1b\u6f14\uff09\u201d\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c6\u56de\u8b1b\u6f14\u4f1a\uff0c \u5e83\u5cf6\u56fd\u969b\u4f1a\u8b70\u5834\uff0c2019\u5e7412\u67083\u65e5\uff5e12\u67084\u65e5<\/li>\n
      15. \u5bfa\u5c3e\u8c4a, \u8fbb\u82f1\u5fb3, \u7d30\u4e95\u5353\u6cbb, \u5f35\u65ed\u82b3<\/span>, \u77e2\u91ce\u88d5\u53f8<\/span>, \u5fd7\u6751\u8003\u529f, \u6e21\u90e8\u5e73\u53f8,\u00a0\u201cThe Role of Oxygen Ambient Anneal for Ba-incorporated SiO2\/SiC Interface\u201d ,\u00a0\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a\u3000\uff0d\u6750\u6599\u30fb\u30d7\u30ed\u30bb\u30b9\u30fb\u30c7\u30d0\u30a4\u30b9\u7279\u6027\u306e\u7269\u7406\uff0d \u7b2c25\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, P-9, pp.137-139, 2020\/1\/31. (1\/31-2\/1).<\/li>\n
      16. \u5ca1\u672c\u5927<\/span>, \u5468\u661f\u708e<\/span>, \u5f35\u65ed\u82b3<\/span>, \u67d3\u8c37\u6e80, \u5ca1\u672c\u5149\u592e, \u7560\u5c71\u54f2\u592b, \u539f\u7530\u4fe1\u4ecb, \u5ca9\u5ba4\u61b2\u5e78<\/span>, \u77e2\u91ce\u88d5\u53f8<\/span>,\u00a0\u300cSiC p\u30c1\u30e3\u30cd\u30ebMOSFET\u306e\u6b63\u5b54\u8f38\u9001\u6a5f\u69cb\u306e\u89e3\u6790\u300d,\u00a0\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u754c\u9762\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u7814\u7a76\u4f1a\u3000\uff0d\u6750\u6599\u30fb\u30d7\u30ed\u30bb\u30b9\u30fb\u30c7\u30d0\u30a4\u30b9\u7279\u6027\u306e\u7269\u7406\uff0d \u7b2c25\u56de\u7814\u7a76\u4f1a, \u6771\u30ec\u7dcf\u5408\u7814\u4fee\u30bb\u30f3\u30bf\u30fc, 11-2, pp.97-100, 2020\/2\/1. (1\/31-2\/1).<\/li>\n
      17. \u6803\u6728 \u5927\u6a39\uff0c\u9ad8\u5d8b \u85ab\uff0c\u78ef\u90e8 \u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u53ea\u91ce \u535a\uff0c\u201c\u30c7\u30d0\u30a4\u30b9\u306e\u9759\u7279\u6027\u306e\u307f\u306b\u57fa\u3065\u3044\u305f\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u30e2\u30c7\u30eb\u306b\u3088\u308b\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u640d\u5931\u63a8\u5b9a\u6cd5\u306e\u5b9f\u9a13\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u5bb6\u96fb\u30fb\u6c11\u751f\/\u81ea\u52d5\u8eca\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u00a0\u540d\u53e4\u5c4b\u5927\u5b66\uff0c2019\u5e7412\u67086\u65e5<\/li>\n
      18. Huang Cheng\uff0c\u5f35\u5263\u97dc\uff0c\u4e2d\u5c71\u592a\u667a\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u53ea\u91ce\u535a\u3000\u201cGaN-HEMT\u7528\u30441 MHz\u3067\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u3059\u308b\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u96fb\u6d41\u9ad8\u8abf\u6ce2\u306e\u4f4e\u6e1b\u306b\u95a2\u3059\u308b\u691c\u8a0e\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5927\u962a\uff0c2020\u5e741\u670824\u65e5\uff5e1\u670825\u65e5<\/li>\n
      19. \u91d1\u68ee\u5927\u6cb3\uff0c\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u5185\u8535pin\u30c0\u30a4\u30aa\u30fc\u30c9\u306b\u304a\u3051\u308b\u9006\u56de\u5fa9\u7279\u6027\u306e\u8ca0\u30b2\u30fc\u30c8\u30d0\u30a4\u30a2\u30b9\u4f9d\u5b58\u6027\u201d\uff0c \u4ee4\u548c2\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff08\u4e2d\u6b62\uff09, \u6771\u4eac\u96fb\u6a5f\u5927\u5b66, 2020\u5e743\u670811\u65e5\uff5e13\u65e5<\/li>\n
      20. \u677e\u4e95\u30b1\u30d3\u30f3\uff0c\u6238\u9ad9\u99ff\u5e0c\uff0c\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4\uff0c\u91d1\u68ee\u5927\u6cb3\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u20181.2kV SBD\u5185\u8535SiC\u30c8\u30ec\u30f3\u30c1MOSFET(SWITCH-MOS)\u306e\u30bf\u30fc\u30f3\u30aa\u30d5\u8010\u91cf\u89e3\u6790\u201d\uff0c \u4ee4\u548c2\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff08\u4e2d\u6b62\uff09, \u6771\u4eac\u96fb\u6a5f\u5927\u5b66,\u00a02020\u5e743\u670811\u65e5\uff5e13\u65e5<\/li>\n
      21. \u6238\u9ad9\u99ff\u5e0c\uff0c\u677e\u4e95\u30b1\u30d3\u30f3\uff0c\u9957\u5834\u5841\u58eb\uff0c\u5927\u5ddd\u96c5\u8cb4\uff0c\u91d1\u68ee\u5927\u6cb3\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u20181.2kV SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u306eRBSOA\u89e3\u6790\u201d\uff0c \u4ee4\u548c2\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff08\u4e2d\u6b62\uff09, \u6771\u4eac\u96fb\u6a5f\u5927\u5b66,\u00a02020\u5e743\u670811\u65e5\uff5e13\u65e5<\/li>\n
      22. \u4e80\u548c\u7530\u4eae\uff0c\u9957\u5834\u5841\u58eb\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u2018\u2018SiC p+\/p-\/n+\u30c0\u30a4\u30aa\u30fc\u30c9\u306b\u304a\u3051\u308b\u9006\u56de\u5fa9\u7279\u6027\u306e\u9806\u65b9\u5411\u52d5\u4f5c\u4f9d\u5b58\u6027\u306e\u89e3\u6790\u201d\uff0c \u4ee4\u548c2\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff08\u4e2d\u6b62\uff09, \u6771\u4eac\u96fb\u6a5f\u5927\u5b66,\u00a02020\u5e743\u670811\u65e5\uff5e13\u65e5<\/li>\n
      23. \u4e0a\u6749\u4fca\u592a\u90ce\uff0c\u5bfa\u7530\u967d\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u2018\u2018\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u9023\u7d9a\u96fb\u5727\u96fb\u529b\u4e09\u76f8\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u3088\u308b\u8a98\u5c0e\u96fb\u52d5\u6a5f\u5b9a\u5e38\u904b\u8ee2\u6642\u306e\u5b9f\u9a13\u691c\u8a3c\u201d\uff0c \u4ee4\u548c2\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff08\u4e2d\u6b62\uff09, \u6771\u4eac\u96fb\u6a5f\u5927\u5b66,\u00a02020\u5e743\u670811\u65e5\uff5e13\u65e5<\/li>\n
      24. Gyozen Sai, Dai Okamoto, Noriyuki Iwamoro, and Hiroshi Yano,\u00a0\u201cInfluence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs\u201d,\u00a0\u7b2c67\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u4e0a\u667a\u5927\u5b66\u3000\u56db\u8c37\u30ad\u30e3\u30f3\u30d1\u30b9, 13a-PA6-6, p. 12-098, 2020\/3\/13. (3\/12-3\/15)\uff08\u4e2d\u6b62\uff09<\/li>\n
      25. \u5ca1\u672c\u5927<\/span>, \u67d3\u8c37\u6e80, \u5742\u7530\u5927\u8f1d<\/span>, \u5f35\u65ed\u82b3<\/span>, \u677e\u8c37\u512a\u6c70<\/span>, \u7560\u5c71\u54f2\u592b, \u5ca1\u672c\u5149\u592e, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8<\/span>, \u5ca9\u5ba4\u61b2\u5e78<\/span>, \u300cOn-the-fly\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u306b\u3088\u308bSiC MOSFET\u8ca0\u30d0\u30a4\u30a2\u30b9\u30b9\u30c8\u30ec\u30b9\u6642\u306e\u754c\u9762\u30c8\u30e9\u30c3\u30d7\u751f\u6210\u89e3\u6790\u300d,\u00a0\u7b2c67\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u4e0a\u667a\u5927\u5b66\u3000\u56db\u8c37\u30ad\u30e3\u30f3\u30d1\u30b9, 15a-A201-15, p. 12-261, 2020\/3\/15. (3\/12-3\/15)\uff08\u4e2d\u6b62\uff09<\/li>\n<\/ol>\n

        \u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b\u00a0(Magazines)<\/h3>\n
          \n
        1. \u5ca9\u5ba4\u3000\u61b2\u5e78,\u3000\u7b2c1\u7bc0\u3000\u201d\u30b5\u30fc\u30de\u30eb\u30de\u30cd\u30fc\u30b8\u30e1\u30f3\u30c8\u3000\uff0d\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u6280\u8853\u3068\u8ab2\u984c\uff0d”, \u30b5\u30fc\u30de\u30eb\u30c7\u30d0\u30a4\u30b9\u3000\u65b0\u7d20\u6750\u30fb\u65b0\u6280\u8853\u306b\u3088\u308b\u71b1\u306e\u9ad8\u5ea6\u5236\u5fa1\u3068\u9ad8\u52b9\u7387\u5229\u7528, \u76e3\u4fee\uff1a\u821f\u6a4b\u826f\u6b21\/\u5c0f\u539f\u6625\u5f66, 2019.04, \u3231\u30a8\u30cc\u30fb\u30c6\u30a3\u30fc\u30fb\u30a8\u30b9.<\/li>\n
        2. \u5ca9\u5ba4\u3000\u61b2\u5e78,\u3000”IV. \u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6”, \u7c89\u4f53\u6280\u8853 6\u6708\u53f7, 2019.<\/li>\n<\/ol>\n

          \u8b1b\u6f14 (Invited Lecture)<\/h3>\n
            \n
          1. N. Iwamuro, “Recent Progress of SiC-MOSFETs and Competition with state-of-the-art Si-IGBTs,” National Tsing Hua University (Taiwan)\u00a0(\u56fd\u7acb\u6e05\u83ef\u5927\u5b66\uff09, May 27th, 2019.<\/li>\n
          2. \u5ca9\u5ba4\u3000\u61b2\u5e78,\u201d\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u52d5\u5411\u304a\u3088\u3073SiC\u30fbGaN\u7814\u7a76\u958b\u767a\u306e\u6700\u524d\u7dda\u201d\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u30d5\u30a9\u30fc\u30e9\u30e0\u30d1\u30ef\u30a8\u30ec\u9053\u5834, 2019\u5e747\u670817\u65e5.<\/li>\n
          3. N. Iwamuro, “Device Design and Characteristics of SiC MOSFETs,” ICSCRM 2019 Tutorial, Kyoto, Sept. 2019.<\/li>\n
          4. \u5ca9\u5ba4\u3000\u61b2\u5e78, “TCAD\u3092\u7528\u3044\u305f\u6700\u5148\u7aefSiC\u30c8\u30ec\u30f3\u30c1MOSFET\u306e\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u89e3\u6790\u201d\u30b7\u30ce\u30d7\u30b7\u30b9SEG\u30bb\u30df\u30ca\u30fc2019, 10\u67089\u65e5.<\/li>\n
          5. \u5ca9\u5ba4\u3000\u61b2\u5e78,”\u30b7\u30ea\u30b3\u30f3\u306a\u3089\u3073\u306bSiC\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411\u201d\u7b2c6\u56de\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u30d5\u30a9\u30fc\u30e9\u30e0\u4eac\u90fd\uff0c2019\u5e7411\u67081\u65e5.<\/li>\n<\/ol>\n

            \u66f8\u7c4d (Books)<\/h3>\n
              \n
            1. \u5ca9\u5ba4\u3000\u61b2\u5e78\u8457\u3000\u201d\u8eca\u8f09\u6a5f\u5668\u306b\u304a\u3051\u308b\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u8a2d\u8a08\u3068\u5b9f\u88c5\u201d\u3000\u79d1\u5b66\u60c5\u5831\u51fa\u7248\u682a\u5f0f\u4f1a\u793e, 2019\u5e749\u670820\u65e5\u767a\u884c<\/li>\n<\/ol>\n","protected":false},"excerpt":{"rendered":"\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002 \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, …","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/4729"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=4729"}],"version-history":[{"count":162,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/4729\/revisions"}],"predecessor-version":[{"id":5531,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/4729\/revisions\/5531"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=4729"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}