{"id":5092,"date":"2020-04-07T21:58:16","date_gmt":"2020-04-07T12:58:16","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=5092"},"modified":"2023-11-20T15:37:43","modified_gmt":"2023-11-20T06:37:43","slug":"2020%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=5092","title":{"rendered":"2020\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"

\u8457\u8005\u306b\u4e0b\u7dda<\/span>\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005<\/span>\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002<\/p>\n

\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n
    \n
  1. H. Nemoto<\/span>, D. Okamoto<\/span>, X. Zhang<\/span>, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada, N. Iwamuro<\/span>, and H. Yano<\/span>, “Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs,” Japanese Journal of Applied Physics<\/em>, Vol. 59, No. 4, 044003\/1-6, 2020,\u00a0DOI: 10.35848\/1347-4065\/ab7ddb<\/a>.<\/li>\n
  2. H. Xu, S. Nomura and T. Isobe<\/span>, “Design and Development of a High-Frequency Magnet Prototype for Magnetic Hyperthermia Applications,” in IEEE Transactions on Applied Superconductivity<\/em>, vol. 30, no. 4, pp. 1-6, June 2020, Art no. 4702806, DOI: 10.1109\/TASC.2020.2978791<\/a>.<\/li>\n
  3. JianTao Zhang, Takanori Isobe, Hiroshi Tadano, “Reduction of harmonic current distortion for single\u2010phase grid\u2010tied inverter operated in discontinuous current mode,” IEEJ Transactions on Electrical and Electronic Engineering, <\/em>Vol. 15, No. 6\uff0cpp. 947-995, June 2020, DOI:10.1002\/tee.23138<\/a>.<\/li>\n
  4. C. Zhang, M. Molinas, S. F\u00f8yen, J. A. Suul and T. Isobe<\/span>, “Harmonic Domain SISO Equivalent Impedance Modeling and Stability Analysis of a Single-phase Grid Connected VSC,” in IEEE Transactions on Power Electronics<\/em>, vol. 35, no. 9, pp. 9770-9783, Sept. 2020, DOI: 10.1109\/TPEL.2020.2970390<\/a>.<\/li>\n
  5. T. Isobe<\/span>, R. A. Barrera-Cardenas<\/span>, Z. He<\/span>, Y. Zou<\/span>, K. Terazono and H. Tadano<\/span>, “Control of Three-Phase Solid-State Transformer With Phase-Separated Configuration for Minimized Energy Storage Capacitors,” in IEEE Journal of Emerging and Selected Topics in Power Electronics<\/em>, vol. 8, no. 3, pp. 3014-3028, Sept. 2020, DOI: 10.1109\/JESTPE.2019.2923785<\/a>.<\/li>\n
  6. J. Zhang, T. Isobe and H. Tadano, “Model-Based Control for Grid-Tied Inverters Operated in Discontinuous Current Mode With Low Harmonic Current Distortion,” in IEEE Transactions on Power Electronics<\/em>, vol. 35, no. 10, pp. 11167-11180, Oct. 2020, DOI: 10.1109\/TPEL.2020.2978871<\/a>.<\/li>\n
  7. K. Yao, H. Yano, H. Tadano, and N. Iwamuro, “Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses,” IEEE Transactions on Electron Devices<\/em>, vol. 67, no. 10, pp. 4328-4334, Oct., 2020, DOI: 10.1109\/TED.2020.3013192<\/a>.<\/li>\n
  8. A. Matsushim<\/span>a, Y. Mori, A. Shima, and N. Iwamuro<\/span>, “Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes,” Japanese Journal of Applied Physics<\/em>, vol. 59, pp. 104003 1-8, 2020, DOI:10.35848\/1347-4065\/abb719.<\/li>\n
  9. C. Zhang, M. Molinas, S. F\u00f8yen, J. A. Suul and T. Isobe<\/span>, “An Integrated Method for Generating VSCs\u2019 Periodical Steady-State Conditions and HSS-Based Impedance Model,” in IEEE Transactions on Power Delivery<\/em>, vol. 35, no. 5, pp. 2544-2547, Oct. 2020, DOI: 10.1109\/TPWRD.2020.2965771<\/a>.<\/li>\n
  10. E. Higa, M. Sometani, H. Hirai, H. Yano<\/span>, S. Harada, T. Umeda,\u00a0\u201cElectrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC\/SiO2 interfaces\u201d,\u00a0Appl. Phys. Lett., Vol. 16, No. 17, 171602\/1-4, 2020. DOI: 10.1063\/5.0002944<\/li>\n
  11. Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto<\/span>, Hiroshi Yano,<\/span> Noriyuki Iwamuro<\/span>, Takao Inokuma, Norio Tokuda, “Energy distribution of Al2O3\/diamond interface states characterized by high temperature capacitance-voltage method,” Carbon<\/em>, vol. 168, pp.659-664, 2020, DOI:10.1016\/j.carbon.2020.07.019.<\/span><\/li>\n
  12. H. Takeda, M. Sometani, T. Hosoi, T. Shimura, H. Yano<\/span> and H. Watanabe,\u00a0\u201cInsight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement\u201d,\u00a0Mater. Sci. Forum, Vol. 1004, pp.620-626, 2020.\u00a0DOI: 10.4028\/www.scientific.net\/MSF.1004.620<\/li>\n
  13. Ruito Aiba<\/span>, Kevin Matsu<\/span>i, Masakazu Baba, Shinsuke Harada, Hiroshi Yano<\/span>, and Noriyuki Iwamuro<\/span>, “Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET with Higher Schottky Barrier Height Metal,”\u00a0IEEE Electron Device Letters<\/em>, vol.41, issue 12, pp. 1810-1813, 2020, doi: 10.1109\/LED.2020.3031598.<\/li>\n
  14. T. Nakayama, T. Mannen, A. Nakajima, and T. Isobe, “Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs,” Microelectronics Reliability, 2020. DOI: 10.1016\/j.microrel.2020.113840<\/a><\/li>\n
  15. T. Mannen<\/span>, T. Isobe<\/span>, and K. Wada, “Investigation of multiple short-circuits characteristics and reliability in SiC power devices used for a start-up method of power converters,” Microelectronics Reliability, 2020. DOI: 10.1016\/j.microrel.2020.113775<\/a><\/li>\n
  16. K. Chou, T. Mannen, and T. Isobe, “Impact of stray-inductance imbalance on short-circuit capability of multi-chip SiC power modules,” Microelectronics Reliability, 2020. DOI: 10.1016\/j.microel.2020.113796<\/a><\/li>\n
  17. T. Honda and H. Yano,\u00a0\u201cSimple method to estimate the shallow interface trap density near the conduction band edge of MOSFETs using Hall effect measurements\u201d, Jpn. J. Appl. Phys., Vol. 60, 016505\/1-6, 2021. DOI: 10.35848\/1347-4065\/abd369<\/li>\n<\/ol>\n

    \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings – International)<\/h3>\n
      \n
    1. M. Okawa<\/span>, T. Kanamori<\/span>, R. Aiba<\/span>, S. Harada, H. Yano<\/span>, and N. Iwamuro<\/span>, “Analysis of 1.2 kV SiC SWITCH-MOS after Short-circuit Stress,” in Proc. of Int. Symp. Power Semiconductors and ICs,\u00a0<\/em>pp. 74-77, 2020.<\/li>\n
    2. R. Aiba<\/span>, K. Matsui<\/span>, M. Okawa<\/span>, T. Kanamori<\/span>, S. Harada, H. Yano<\/span>, and N. Iwamuro<\/span>, “Investigation of dVDS\/dt Controllability on Rg in SWITCH-MOS to Achieve Superior Turn-on Characteristics with Low dVDS\/dt,” in\u00a0Proc. of Int. Symp. Power Semiconductors and ICs,\u00a0<\/em>pp. 174-177, 2020.<\/li>\n
    3. X. Cui, N. Iwamuro, and H. Yano, “Influence of Interface Traps on the Shape of Split C-V Curves of 4HSiC MOSFETs at Inversion,” in\u00a0Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials<\/em>, pp. 241-242, 2020.<\/li>\n
    4. T. Ohashi, R. Iijima, and H. Yano<\/span>, “Development of Analytical Channel Mobility Model Based on Study of Universal Mobility in SiC MOSFET,” in\u00a0Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials<\/em>, pp. 219-222, 2020.<\/li>\n
    5. T. Mannen<\/span>, T. Isobe<\/span>, and K. Wada, “DC Capacitor Voltage Feedback Method for a Peak Voltage Suppression Control with Multiple Leg-Short-Circuits Using SiC-MOSFETs Employed in Power Converters,” in Proceedings of 2020 22nd European Conference on Power Electronics and Applications (EPE’20 ECCE Europe)<\/em>, Sep. 7-11, 2020. DOI: 10.23919\/EPE20ECCEEurope43536.2020.9215869<\/a><\/li>\n
    6. K. Chou, T. Mannen, and T. Isobe, “Impact of stray-inductance imbalance on short-circuit capability of multi-chip SiC power modules,” 31st European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF 2020)<\/em>, Oct. 4-8, 2020.<\/li>\n
    7. T. Nakayama, T. Mannen, A. Nakajima, and T. Isobe, “Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs,” 31st European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF 2020)<\/em>, Oct. 4-8, 2020.<\/li>\n
    8. T. Mannen<\/span>, T. Isobe<\/span>, and K. Wada, “Investigation of multiple short-circuits characteristics and reliability in SiC power devices used for a start-up method of power converters,” 31st European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF 2020)<\/em>, Oct. 4-8, 2020.<\/li>\n
    9. H. Zhang, M. Akihiro, T. Mannen, and T. Isobe, “An Optimized Scheme for Current Stress Reduction with Zero-Voltage Switching in Dual-Active-Bridge Converters under Varying Input Voltage,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE 2020)<\/em>, Oct.11-15, 2020.\u00a0DOI:\u00a010.1109\/ECCE44975.2020.9235426<\/a><\/li>\n
    10. T. Nakayama, T. Mannen, A. Nakajima, and T. Isobe, “High-Frequency Quasi-Z-Source Inverter Concept for Short-Circuit Capable GaN-HEMT-Based Converters,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE 2020)<\/em>, Oct.11-15, 2020. DOI: 10.1109\/ECCE44975.2020.9235693<\/a><\/li>\n
    11. D. Yamaguchi, Y. Cheng, T. Mannen<\/span>, H. Obara, K. Wada, M. Takamiya, T. Sakurai, and T. Sai, “Digital Active Gate Control for a Three-Phase Inverter Circuit for a Surge Voltage Suppression and Switching Loss Reduction,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE 2020)<\/em>, Oct.11-15, 2020. DOI: 10.1109\/ECCE44975.2020.9235772<\/a><\/li>\n
    12. H. N. Pham, T. Mannen<\/span>, and K. Wada, “A Three-Phase Isolated Rectifier using Current Unfolding and Active Damping Methods,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE 2020)<\/em>, Oct.11-15, 2020. DOI: 10.1109\/ECCE44975.2020.9235762<\/a><\/li>\n
    13. C. Huang, J. Zhang, T. Mannen, and T. Isobe, “Efficiency Improvement with Off-Time Discrete Control for 1 MHz Operated Discontinuous Current Mode Grid-Tied Inverter,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE 2020)<\/em>, Oct.11-15, 2020. DOI:10.1109\/ECCE44975.2020.9235787<\/a><\/li>\n
    14. T. Kanamori<\/span>, R. Aiba<\/span>, S. Harada, H. Yano<\/span>, and N. Iwamuro<\/span>, “Experimental Demonstration of\u00a0\u00a0Superior Vf -Err Characteristics of pin Body Diode in 1.2 kV IE-UMOSFET with a Very Short Channel Length,” in Proceedings of PCIM Asia,<\/em>\u00a0 pp. 25-29, 2020.<\/li>\n
    15. S. Uesugi, T. Mannen, and T. Isobe, “Feed-forward Current Control for Filter Size Reduction in a Sinusoidal Voltage Output Inverter for IPMSM Drive,” 23st International Conference on Electrical Machines and Systems (ICEMS2020)<\/em>, Nov. 24-27, 2020. DOI: 10.23919\/ICEMS50442.2020.9291072<\/a><\/li>\n<\/ol>\n

      \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings – Domestic)<\/h3>\n
        \n
      1. \u5f35\u660a\u5b87\uff0c\u79cb\u5ee3\u5143\u8f1d\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201cDual-Active Bridge\u30b3\u30f3\u30d0\u30fc\u30bf\u306e\u2f0a\u2f12\u96fb\u5727\u304c\u5909\u5316\u3059\u308b\u6761\u4ef6\u4e0b\u306b\u304a\u3051\u308b\u30d4\u30fc\u30af\u96fb\u6d41\u6291\u5236\u3068\u30bc\u30ed\u96fb\u5727\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u5b9f\u73fe\u306e\u305f\u3081\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u96fb\u6d41\u5236\u5fa1\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u9ce5\u53d6\uff0c2020\u5e749\u67083\u65e5\u30fb9\u67084\u65e5<\/li>\n
      2. \u4e2d\u2f2d\u592a\u667a\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u4e2d\u5cf6 \u662d\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201cGaN-HEMT\u3092\u9069\u2f64\u3057\u305fQuasi-Z\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u8ca0\u8377\u77ed\u7d61\u4e8b\u6545\u4fdd\u8b77\u3092\u60f3\u5b9a\u3057\u305f\u30a4\u30f3\u30d4\u30fc\u30c0\u30f3\u30b9\u30bd\u30fc\u30b9\u306e\u8a2d\u8a08\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u9ce5\u53d6\uff0c2020\u5e749\u67083\u65e5\u30fb9\u67084\u65e5<\/li>\n
      3. \u674e \u5922\u2f7b\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201cZ\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u8cab\u901a\u30e2\u30fc\u30c9\u306e\u6642\u9593\u914d\u7f6e\u3092\u6539\u5584\u3057\u305f\u7a7a\u9593\u30d9\u30af\u30c8\u30eb\u5909\u8abf\u6cd5\u306b\u3088\u308b\u30a4\u30f3\u30c0\u30af\u30bf\u306e\u2f29\u578b\u5316\u306e\u5b9f\u9a13\u691c\u8a3c\u3068\u89e3\u6790\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u9ce5\u53d6\uff0c2020\u5e749\u67083\u65e5\u30fb9\u67084\u65e5<\/li>\n
      4. Noriyuki Iwamuro,\u00a0 “Recent progress of power semiconductor devices and expectation for GaN power devices (Invited),” 39th Electronic Materials Symposium, 2020\u5e7410\u67087~9\u65e5.<\/li>\n
      5. \u5742\u7530\u5927\u8f1d\uff0c\u5ca1\u672c\u5927\uff0c\u67d3\u8c37\u6e80\uff0c\u5e73\u4e95\u60a0\u4e45\uff0c\u5ca1\u672c\u5149\u592e\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u7560\u5c71\u54f2\u592b\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78,\u300c\u6539\u826f\u9ad8\u901fOn-the-fly\u6cd5\u306b\u3088\u308bSiC MOSFET\u306e\u6b63\u78ba\u306aNBTI\u8a55\u4fa1\u300d, \u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c7\u56de\u8b1b\u6f14\u4f1a\uff0c 2020\u5e7412\u67089\u65e5\uff5e12\u670810\u65e5<\/li>\n
      6. \u4e0a\u6749\u4fca\u592a\u90ce\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201c\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u30e2\u30fc\u30bf\u99c6\u52d5\u7528\u6b63\u5f26\u6ce2\u96fb\u5727\u51fa\u529b\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u5c0f\u578b\u306aLC\u30d5\u30a3\u30eb\u30bf\u306e\u30d5\u30a3\u30fc\u30c9\u30d5\u30a9\u30ef\u30fc\u30c9\u5236\u5fa1\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u5bb6\u96fb\u30fb\u6c11\u751f\/\u81ea\u52d5\u8eca\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5175\u5eab\uff0c2020\u5e7412\u670811\u65e5<\/li>\n
      7. \u9ad9\u6a4b\u52c7\u7d00\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201c\u4e8b\u6545\u96fb\u6d41\u4f4e\u6e1b\u3092\u76ee\u7684\u3068\u3057\u305f\u76f4\u5217\u88dc\u511f\u578b\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u5909\u5727\u5668\u306e\u4e8b\u6545\u767a\u751f\u6642\u306b\u304a\u3051\u308b\u52d5\u4f5c\u306e\u691c\u8a3c\u201d\uff0c \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c2021\u5e743\u67081\u65e5\u30fb2\u65e5<\/li>\n
      8. \u85e4\u5d0e\u7965\u5f18\uff0c\u4e2d\u5c71\u592a\u667a\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201c\u30b2\u30fc\u30c8\u5236\u5fa1\u3092\u5fc5\u8981\u3068\u3057\u306a\u3044\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u906e\u65ad\u5668\u306e\u52d5\u4f5c\u89e3\u6790\u3068\u8a2d\u8a08\u624b\u6cd5\u306e\u63d0\u6848\u201d\uff0c \u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c2021\u5e743\u67081\u65e5\u30fb2\u65e5<\/li>\n
      9. \u674e\u5922\u7fbd\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201c\uff3a\u30bd\u30fc\u30b9\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u904e\u6e21\u73fe\u8c61\u306e\u89e3\u6790\u3068\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u8a66\u9a13\u6cd5\u306e\u63d0\u6848\u201d\uff0c\u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c2021\u5e743\u67081\u65e5\u30fb2\u65e5<\/li>\n
      10. \u78ef\u90e8\u9ad8\u7bc4\uff0cLouCheng\uff0c\u9577\u8c37\u5ddd\u667a\u5b8f\uff0c\u201c\u30b3\u30f3\u30c7\u30f3\u30b5\u653e\u96fb\u30d1\u30eb\u30b9\u767a\u751f\u56de\u8def\u306e\u305f\u3081\u306e\u90e8\u5206\u96fb\u529b\u5909\u63db\u306e\u539f\u7406\u306b\u57fa\u3065\u304f\u5145\u96fb\u5236\u5fa1\u56de\u8def\u201d\uff0c\u4ee4\u548c3\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5927\u962a\uff0c2021\u5e743\u67089~11\u65e5<\/li>\n
      11. \u5d8c\u7530\u51dc\u592a\u90ce\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201f\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u7cfb\u7d71\u9023\u7cfb\u4e09\u76f8\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30c0\u30af\u30bf\u306e\u66f4\u306a\u308b\u5c0f\u578b\u5316\u306b\u5411\u3051\u305f\u30d4\u30fc\u30af\u96fb\u6d41\u6291\u5236\u5236\u5fa1\u306e\u5b9f\u9a13\u691c\u8a3c\u201d\uff0c\u4ee4\u548c3\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5927\u962a\uff0c2021\u5e743\u67089~11\u65e5<\/li>\n
      12. \u677e\u4e95\u30b1\u30d3\u30f3, \u9957\u5834\u5841\u58eb, \u67cf\u4f73\u4ecb, \u99ac\u5834\u6b63\u548c, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78, \u300c\u9ad8\u30b7\u30e7\u30c3\u30c8\u30ad\u30fc\u969c\u58c1\u91d1\u5c5e\u3092\u9069\u7528\u3057\u305f1.2 kV SBD\u5185\u8535SiC\u30c8\u30ec\u30f3\u30c1MOSFET\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027\u8a55\u4fa1\u300d, \u4ee4\u548c3\u5e74\u5ea6\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, 2021\u5e743\u67089\u65e5~11\u65e5<\/li>\n
      13. \u67cf\u4f73\u4ecb,\u677e\u4e95\u30b1\u30d3\u30f3, \u9957\u5834\u5841\u58eb, \u99ac\u5834\u6b63\u548c, \u539f\u7530\u4fe1\u4ecb, \u77e2\u91ce\u88d5\u53f8, \u5ca9\u5ba4\u61b2\u5e78, \u300c\u71b1\u5fdc\u529b\u30b7\u30df\u30e5\u30ec\u30fc\u30b7\u30e7\u30f3\u3092\u7528\u3044\u305f1.2 kV SBD\u5185\u8535SiC\u30c8\u30ec\u30f3\u30c1MOSFET(SWITCH-MOS)\u306e\u8ca0\u8377\u77ed\u7d61\u8010\u91cf\u89e3\u6790\u300d, \u4ee4\u548c3\u5e74\u5ea6\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a, 2021\u5e743\u67089\u65e5~11\u65e5<\/li>\n
      14. \u5317\u6751\u96c4\u5927\uff0c\u4e80\u548c\u7530\u4eae\uff0c\u5150\u5cf6\u4e00\u8061\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c4H-SiC\u30b7\u30e7\u30c3\u30c8\u30ad\u30fcpn\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u9ad8\u8010\u5727\u5316\u300d\uff0c\u7b2c68\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c2021\u5e743\u670816~19\u65e5<\/li>\n<\/ol>\n

        \u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b (Magazines)<\/h3>\n
          \n
        1. \u5ca9\u5ba4\u61b2\u5e78, “GaN\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u57fa\u790e”, \u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30a4\u30cd\u2015\u30d6\u30ea\u30f3\u30b0\u5354\u4f1a\u4f1a\u5831\u8a8c, vol. 15, pp.7-9, 2020\u5e742\u6708<\/li>\n
        2. \u5ca9\u5ba4\u61b2\u5e78,\u3000\u201d\u6ce8\u76ee\u3055\u308c\u308b\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9SiC\u30fbGaN”, \u96fb\u6c17\u8a08\u7b97\u3000pp.35-40, 2020.04, \u96fb\u6c17\u66f8\u9662.<\/li>\n
        3. \u5ca9\u5ba4\u61b2\u5e78,\u3000”SiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u958b\u767a\u3001\u5b9f\u88c5\u6280\u8853\u3068\u8eca\u8f09\u6a5f\u5668\u3078\u306e\u5c55\u671b,” \u30af\u30ea\u30fc\u30f3\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u3000pp.1-4,\u00a0 2020.5, \u65e5\u672c\u5de5\u696d\u51fa\u7248.<\/li>\n
        4. Noriyuki Iwamuro, “Power Semiconductors Beef Up Role in 5G, Electrified Vehicles,” AEI, July, pp. 20-21, 2020.<\/li>\n
        5. \u00a0\u5ca9\u5ba4\u61b2\u5e78, “GaN\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u6280\u8853\u52d5\u5411”, \u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30a4\u30cd\u2015\u30d6\u30ea\u30f3\u30b0\u5354\u4f1a\u4f1a\u5831\u8a8c, vol. 16, pp.7-9, 2020\u5e748\u6708<\/li>\n
        6. \u5ca9\u5ba4\u61b2\u5e78, “\u57285G \u5546\u7528\u5316\u548cEV \u666e\u53ca\u4e0a\u5173\u6ce8\u5ea6\u4e0d\u65ad\u589e\u52a0\u7684\u529f\u7387\u534a\u5bfc\u4f53,” AEI (\u4e2d\u56fd\u8a9e\u7248\uff09, August, pp.22-23, 2020.<\/li>\n
        7. \u5ca9\u5ba4\u61b2\u5e78, “\u81ea\u52d5\u8eca\u306e\u96fb\u52d5\u5316\u306b\u5411\u3051\u305fSiC\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u30fbGaN\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306e\u6700\u65b0\u72b6\u6cc1\u306a\u3089\u3073\u306b\u4eca\u5f8c\u306e\u52d5\u5411,” \u5de5\u696d\u6750\u6599, vol.68, pp.14-19, 2020.<\/li>\n
        8. \u5ca9\u5ba4\u61b2\u5e78,\u00a0 \u00a0“\u7dcf\u8ad6\uff1a\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u306e\u73fe\u72b6\u3068\u5c06\u6765,” \u96fb\u6c17\u8a55\u8ad6\u3000pp.6-12, 2020.12, \u96fb\u6c17\u8a55\u8ad6\u793e.<\/li>\n
        9. \u78ef\u90e8\u9ad8\u7bc4:\u300c\u30b7\u30b9\u30c6\u30e0\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u306b\u5411\u3051\u305f\u30c7\u30d0\u30a4\u30b9\u99c6\u52d5\u30fb\u5236\u5fa1\u30fb\u30bb\u30f3\u30b5\u6280\u8853<\/span>\u300d, \u96fb\u6c17\u5b66\u4f1a\u8a8c, Vol. 140, No. 7, pp. 420-423, 2020. DOI: 10.1541\/ieejjournal.140.420<\/span><\/a><\/li>\n<\/ol>\n

          \u8b1b\u6f14 (Invited Lecture)<\/h3>\n
            \n
          1. \u5ca9\u5ba4\u61b2\u5e78, “Si-IGBT\u306a\u3089\u3073\u306bSiC-MOSFET\u8ca0\u8377\u77ed\u7d61\u6642\u306e\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u201d\u3000\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u3000\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u30002020\u5e74\u30c1\u30e5\u30fc\u30c8\u30ea\u30a2\u30eb\uff0812\u67088\u65e5\uff09<\/span><\/li>\n<\/ol>\n

            \u66f8\u7c4d (Books)<\/h3>\n","protected":false},"excerpt":{"rendered":"\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002 \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) H. Nemoto, D. Okamoto, X. Zhang, M. Sometani, …","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5092"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=5092"}],"version-history":[{"count":92,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5092\/revisions"}],"predecessor-version":[{"id":6360,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5092\/revisions\/6360"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=5092"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}