{"id":5517,"date":"2021-07-10T16:05:32","date_gmt":"2021-07-10T07:05:32","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=5517"},"modified":"2023-05-09T11:53:36","modified_gmt":"2023-05-09T02:53:36","slug":"2021%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=5517","title":{"rendered":"2021\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<p><\/p>\n<p>\u8457\u8005\u306b<span style=\"text-decoration: underline;\">\u4e0b\u7dda<\/span>\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c<span style=\"text-decoration: underline;\">\u4e0b\u7dda\u306e\u8457\u8005<\/span>\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002<\/p>\n<h3>\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n<ol>\n<li>K. Yao, H. Yano, and\u00a0\u00a0N. Iwamuro,\u00a0&#8220;Investigations of short-circuit failure in double trench SiC MOSFETs through three-dimensional electro-thermal-mechanical stress analysis,&#8221; <em>Microelectronics Reliability<\/em>, Vol. 122, pp. 114163\/1-10, 2021,\u00a0<a href=\"https:\/\/doi.org\/10.35848\/1347-4065\/ab7ddb\">DOI: 10.1016\/j.microrel.2021.114163<\/a>.<\/li>\n<li><span style=\"text-decoration: underline;\">Hiroki Sakata<\/span>, <span style=\"text-decoration: underline;\">Dai Okamoto<\/span>, Mitsuru Sometani, Mitsuo Okamoto, Hirohisa Hirai, Shinsuke Harada, Tetsuo Hatakeyama, <span style=\"text-decoration: underline;\">Hiroshi Yano<\/span>, and <span style=\"text-decoration: underline;\">Noriyuki Iwamuro<\/span>, &#8220;Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method,&#8221; <em>Japanese Journal of Applied Physics<\/em>, vol.60, pp. 060901\/1-4, 2021, <a href=\"https:\/\/iopscience.iop.org\/article\/10.35848\/1347-4065\/abff38\">DOI:10.35848\/1347-4065\/abff38<\/a>.<\/li>\n<li>C. Huang, J. Zhang, T. Mannen and T. Isobe, &#8220;Efficiency improvement with off-time discrete control for GaN-based MHz-operated discontinuous current mode grid-tied inverter,&#8221; in\u00a0<em>IEEE Transactions on Industry Applications<\/em>, vol. 57, no. 5, pp. 5108-5116, Sept.-Oct. 2021, <a href=\"https:\/\/doi.org\/10.1109\/TIA.2021.3093254\">DOI: 10.1109\/TIA.2021.3093254.<\/a><\/li>\n<li><span style=\"text-decoration: underline;\">K. Itoh<\/span>, <span style=\"text-decoration: underline;\">R. Barrera-Cardenas<\/span>,\u00a0 M. Ishigaki, T. Sugiyama, <span style=\"text-decoration: underline;\">T. Isobe<\/span>, and <span style=\"text-decoration: underline;\">H. Tadano<\/span>, &#8220;Analysis and Design of a Single-Stage Isolated DC\/AC Converter for a High-Power-Density Onboard AC Inverter,&#8221; <em>IEEJ Transaction on Electrical and Electronic Engineering, vol. 17, pp.120-131, Jan. 2022,\u00a0 <\/em><a href=\"https:\/\/doi.org\/10.1002\/tee.23494\">DOI:10.1002\/tee.23494<\/a><em>.<\/em><\/li>\n<li>K. Yao, H. Yano and N. Iwamuro, &#8220;Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs,&#8221; in\u00a0<em>IEEE Transactions on Electron Devices<\/em>, vol. 69, no. 2, pp. 637-643, Feb. 2022, doi: 10.1109\/TED.2021.3133201.<\/li>\n<li><!--StartFragment-->C. Zhang, <span style=\"text-decoration: underline;\">T. Isobe<\/span>, J. A. Suul, T. Dragi\u010devi\u0107 and M. Molinas, &#8220;Parametric Stability Assessment of Single-Phase Grid-Tied VSCs Using Peak and Average DC Voltage Control,&#8221; in <em>IEEE Transactions on Industrial Electronics<\/em>, vol. 69, no. 3, pp. 2904-2915, March 2022, <a href=\"https:\/\/doi.org\/10.1109\/TIE.2021.3068551\">DOI: 10.1109\/TIE.2021.3068551<\/a>.<!--EndFragment--><\/li>\n<li>M. Li, R. Iijima, T. Mannen, T. Isobe and H. Tadano, &#8220;New Modulation for Z-Source Inverters With Optimized Arrangement of Shoot-Through State for Inductor Volume Reduction,&#8221; in <em>IEEE Transactions on Power Electronics<\/em>, vol. 37, no. 3, pp. 2573-2582, March 2022, <a href=\"https:\/\/doi.org\/10.1109\/TPEL.2021.3109672\">DOI: 10.1109\/TPEL.2021.3109672<\/a>.<\/li>\n<li>\u8a31 \u822a, \u91ce\u6751 \u65b0\u4e00, <span style=\"text-decoration: underline;\">\u78ef\u90e8 \u9ad8\u7bc4<\/span>, \u529b\u77f3 \u6d69\u5b5d, \u7b52\u4e95 \u5e83\u660e, &#8220;\u5e83\u3044\u30a8\u30a2\u30ae\u30e3\u30c3\u30d7\u304c\u3042\u308b\u78c1\u5fc3\u96fb\u78c1\u77f3\u306e\u81ea\u5df1\u30a4\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u6982\u7b97\u6cd5, &#8220;\u96fb\u6c17\u5b66\u4f1a\u8ad6\u6587\u8a8c\uff24\uff08\u7523\u696d\u5fdc\u7528\u90e8\u9580\u8a8c\uff09, vol. 141, no. 11, pp. 912-920, 2021, <a href=\"https:\/\/doi.org\/10.1541\/ieejias.141.912\">DOI: 10.1541\/ieejias.141.912<\/a><\/li>\n<li>H. Zhang, T. Isobe, &#8220;An Improved Charge-Based Method Extended to Estimating Appropriate Dead Time for Zero-Voltage-Switching Analysis in Dual-Active-Bridge Converter,&#8221; in <em>Energies<\/em>, vol. 15, issue. 2, 671, March 2022, <a href=\"https:\/\/doi.org\/10.3390\/en15020671\">DOI: 10.3390\/en15020671.<\/a><\/li>\n<\/ol>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings &#8211; International)<\/h3>\n<ol>\n<li><span style=\"text-decoration: underline;\">K. Matsui<\/span>,\u00a0<span style=\"text-decoration: underline;\">R. Aiba<\/span>, M. Baba, S. Harada, <span style=\"text-decoration: underline;\">H. Yano<\/span>, and <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, &#8220;Comprehensive Study on Electrical Characteristics in 1.2 kV SiC SBD-integrated Trench and Planar MOSFETs&#8221; in\u00a0<em>Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2021),\u00a0<\/em>pp. 215-218, 2021.<\/li>\n<li>K. Yao, H. Yano, and N. Iwamuro,\u00a0&#8220;Investigations of UIS Failure Mechanism in 1.2 kV Trench SiC MOSFETs Using Electro-Thermal-Mechanical Stress Analysis&#8221; in\u00a0<em>Proc. of Int. Symp. Power Semiconductors and ICs <em>(ISPSD 2021)<\/em>,\u00a0<\/em>pp. 115-118, 2021.<\/li>\n<li><span style=\"text-decoration: underline;\">S. Todaka<\/span>,<span style=\"text-decoration: underline;\"> K. Matsui<\/span>, <span style=\"text-decoration: underline;\">R. Aiba<\/span>, M. Baba, S. Harada, <span style=\"text-decoration: underline;\">H. Yano<\/span>, and <span style=\"text-decoration: underline;\">N. Iwamuro<\/span>, &#8220;Experimental and Numerical Demonstration of Superior RBSOAs in 1.2kV SiC Trench and SBD-integrated Trench MOSFETs&#8221; in\u00a0<em>Proc. of Int. Symp. Power Semiconductors and ICs <em>(ISPSD 2021)<\/em>,\u00a0<\/em>pp. 219-222, 2021.<\/li>\n<li>\n<div class=\"u-pb-1 stats-document-abstract-doi\">C. Huang, T. Mannen and T. Isobe, &#8220;Improved Off-Time Discrete Control for DCM Grid-Tied Inverter with Accurate Average Current Model and considering Nonlinear Parasitic Capacitance,&#8221;<em>2021 IEEE ENERGY CONVERSION CONGRESS (ECCE 2021)<\/em>, Oct, 2021. DOI: <a href=\"https:\/\/doi.org\/10.1109\/ECCE47101.2021.9595522\" target=\"_blank\" rel=\"noopener\">10.1109\/ECCE47101.2021.9595522<\/a><\/div>\n<\/li>\n<li>S. Miyahara, T. Mannen and T. Isobe, A. Niwa, H. Akiyama, &#8220;Development of an output characteristics measuring platform for high voltage and large current of power devices and calculation of switching waveforms utilizing the measured values ,&#8221;<em>2021 IEEE International Future Energy Electronics Conference (IFEEC 2021)<\/em>, Nov, 2021. DOI: <a href=\"https:\/\/doi.org\/10.1109\/IFEEC53238.2021.9661695\" target=\"_blank\" rel=\"noopener\">10.1109\/IFEEC53238.2021.9661695<\/a><\/li>\n<li>R. Shimada, C. Huang, T. Mannen and T. Isobe, &#8220;Unipolar\/Bipolar Mixed Modulation for Discontinuous Current Mode Single-phase Grid-tied Inverter with Off-time Discrete Control ,&#8221;<em>2021 IEEE International Future Energy Electronics Conference (IFEEC 2021)<\/em>, Nov, 2021. DOI: <a href=\"https:\/\/doi.org\/10.1109\/IFEEC53238.2021.9661896\" target=\"_blank\" rel=\"noopener\">10.1109\/IFEEC53238.2021.9661896<\/a><\/li>\n<li>C. Lou, T. Mannen and T. Isobe, &#8220;Charging Current Control for Capacitor Discharge Type Pulse Voltage Generator by Using Partial Rated Converter,&#8221; <em>2021 IEEE International Future Energy Electronics Conference (IFEEC 2021)<\/em>, Nov, 2021. DOI: <a href=\"https:\/\/doi.org\/10.1109\/IFEEC53238.2021.9661993\" target=\"_blank\" rel=\"noopener\">10.1109\/IFEEC53238.2021.9661993<\/a><\/li>\n<li>\n<div class=\"u-pb-1 stats-document-abstract-doi\">H. Zhang, T. Isobe and T. Mannen, &#8220;Back-to-back geometrical configuration of two parallel-connected double-sided cooling modules for parasitic inductance reduction,&#8221; <em>2022 IEEE Applied Power Electronics Conference and Exposition (APEC)<\/em>, Houston, TX, USA, 2022, pp. 336-341. DOI: <a href=\"https:\/\/doi.org\/10.1109\/APEC43599.2022.9773488\" target=\"_blank\" rel=\"noopener\">10.1109\/APEC43599.2022.9773488<\/a><\/div>\n<\/li>\n<\/ol>\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings &#8211; Domestic)<\/h3>\n<ol>\n<li>\u5bae\u539f\u3000\u99ff\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201c\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u9ad8\u96fb\u5727\u30fb\u5927\u96fb\u6d41\u57df\u306b\u304a\u3051\u308b\u51fa\u529b\u7279\u6027\u6e2c\u5b9a\u88c5\u7f6e\u306e\u958b\u767a\u3068\u305d\u306e\u6e2c\u5b9a\u5024\u3092\u6d3b\u7528\u3057\u305f\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u6ce2\u5f62\u7b97\u51fa\u201d\uff0c2021\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u9577\u5ca1\uff0c2021\u5e748\u670825\u65e5\uff5e27\u65e5<\/li>\n<li>\u6fa4\u7530\u9ad8\u5fd7\uff0c\u53ea\u91ce\u3000\u535a\uff0c\u5869\u5d0e\u5b8f\u53f8\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201cGaN\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u642d\u8f09\u30a4\u30f3\u30d0\u30fc\u30bf\u57fa\u677f\u306e\u30d0\u30b9\u30d0\u30fc\u51b7\u5374\u69cb\u9020\u306b\u3088\u308b\u9ad8\u653e\u71b1\u6027\u3068\u30b2\u30fc\u30c8\u30a4\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u4f4e\u6e1b\u201d\uff0c2021\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u9577\u5ca1\uff0c2021\u5e748\u670825\u65e5\uff5e27\u65e5<\/li>\n<li>\u53ea\u91ce\u3000\u535a\uff0c\u6fa4\u7530\u9ad8\u5fd7\uff0c\u5869\u5d0e\u5b8f\u53f8\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201cp-GaN\u30b2\u30fc\u30c8\u6a2a\u578b\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u306e\u77ed\u7d61\u8010\u91cf\u8a55\u4fa1\u201d\uff0c2021\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u9577\u5ca1\uff0c2021\u5e748\u670826\u65e5<\/li>\n<li>Huang Cheng\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201c\u96e2\u6563\u578b\u30aa\u30d5\u30bf\u30a4\u30e0\u5236\u5fa1\u3092\u7528\u3044\u305fDCM\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u30bb\u30f3\u30b5\u30ec\u30b9\u96fb\u6d41\u5236\u5fa1\u306b\u304a\u3051\u308b\u8efd\u8ca0\u8377\u6642\u96fb\u6d41\u6b6a\u307f\u306e\u4f4e\u6e1b\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5ddd\u8d8a\uff0c2021\u5e749\u670817\u65e5<\/li>\n<li>\u4e0a\u6749\u4fca\u592a\u90ce\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201c\u78c1\u6c17\u7d50\u5408\u30a4\u30f3\u30c0\u30af\u30bf\u3092\u5229\u7528\u3057\u305f\u30a4\u30f3\u30bf\u30fc\u30ea\u30fc\u30d6\u65b9\u5f0f\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u5b9f\u6a5f\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u5ddd\u8d8a\uff0c2021\u5e749\u670817\u65e5<\/li>\n<li>\u68ee\u6d77\u6597\uff0c\u4e80\u548c\u7530\u4eae\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c4H-SiC\u30b7\u30e7\u30c3\u30c8\u30ad\u30fcpn\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u6700\u9069\u8a2d\u8a08\u691c\u8a0e\u3068\u52d5\u4f5c\u89e3\u6790\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c8\u56de\u8b1b\u6f14\u4f1a\uff0c2021\u5e7412\u67089\u65e5\uff5e12\u670810\u65e5<\/li>\n<li>\u897f\u57ce\u667a\u54c9\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u201c\u30e2\u30ce\u30ea\u30b7\u30c3\u30af\u76f8\u88dc\u578b\u96fb\u529b\u5909\u63db\u5668\u306b\u5411\u3051\u305f4H-SiC RESURF p-MOSFET\u306e\u6700\u9069\u8a2d\u8a08\u306e\u691c\u8a0e\u201c\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c\uff18\u56de\u8b1b\u6f14\u4f1a\uff0c2021\u5e7412\u67089\u65e5<\/li>\n<li>\u5742\u7530\u5927\u8f1d\uff0c\u5ca1\u672c\u5927\uff0c\u67d3\u8c37\u6e80\uff0c\u5e73\u4e95\u60a0\u4e45\uff0c\u5ca1\u672c\u5149\u592e\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u7560\u5c71\u54f2\u592b\uff0c\u77e2\u91ce \u88d5\u53f8\uff0c\u5ca9\u5ba4 \u61b2\u5e78,\u3000\u300c\u6539\u826f\u9ad8\u901fOn-the-fly\u6cd5\u306b\u3088\u308bSiC MOSFET\u306eNBTI\u8a55\u4fa1\u300d,\u3000\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a\u3000\u7b2c8\u56de\u8b1b\u6f14\u4f1a\uff0c2021\u5e7412\u67089\u65e5\uff5e12\u670810\u65e5<\/li>\n<li>Huang Cheng\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u201c\u96e2\u6563\u578b\u30aa\u30d5\u30bf\u30a4\u30e0\u5236\u5fa1\u3092\u7528\u3044\u305fZVS \u53ef\u80fd\u306aDCM\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u9ad8\u52b9\u7387\u5316\u306b\u5411\u3051\u305f\u96fb\u6d41\u30ea\u30c3\u30d7\u30eb\u306e\u4f4e\u6e1b\u6cd5\u201d\uff0c\u96fb\u529b\u6280\u8853\u30fb\u96fb\u529b\u7cfb\u7d71\u6280\u8853\u30fb\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u58f1\u5c90\uff0c2022\u5e743\u670810\u65e5\uff5e11\u65e5<\/li>\n<li>\u79cb\u8449\u6df3\u5b8f\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c3\u30ec\u30d9\u30eb\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u3092\u7528\u3044\u305fSiC MOSFET\u306e\u754c\u9762\u6b20\u9665\u5206\u5e03\u306e\u691c\u8a0e\u300d\uff0c\u7b2c69\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c2022\u5e743\u670822~26\u65e5<\/li>\n<li>\u68ee\u6d77\u6597\uff0c\u4e80\u548c\u7530\u4eae\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c4H-SiC\u30b7\u30e7\u30c3\u30c8\u30ad\u30fcpn\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u5c0e\u96fb\u6a5f\u69cb\u89e3\u6790\u300d\uff0c\u7b2c69\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c2022\u5e743\u670822~26\u65e5<\/li>\n<li>\u9ad8\u6a4b\u5149\u5e0c\uff0c\u67cf\u4f73\u4ecb\uff0c\u677e\u4e95\u30b1\u30d3\u30f3\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u300cTCAD\u30b7\u30df\u30e5\u30ec\u30fc\u30b7\u30e7\u30f3\u3092\u7528\u3044\u305f1.2kV SBD\u5185\u8535 SiC MOSFET\u306e\u96fb\u6c17\u7279\u6027\u89e3\u6790\u300d\uff0c\u4ee4\u548c4\u5e74\u5ea6\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c2022\u5e743\u670821\u65e5\uff5e23\u65e5<\/li>\n<\/ol>\n<h3>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b (Magazines)<\/h3>\n<ol>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78, &#8220;<span style=\"color: #444444;\">\u81ea\u52d5\u8eca\u96fb\u52d5\u5316\u3078\u5411\u3051\u305fSiC\/GaN \u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u958b\u767a\u72b6\u6cc1\u3068\u8ab2\u984c&#8221;, \u6708\u520a\u8eca\u8f09\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u30019\u6708\u53f7,\u00a0 \u6280\u8853\u60c5\u5831\u5354\u4f1a.<\/span><\/li>\n<li>Noriyuki Iwamuro, &#8220;Power ICs Shape Up to Meet Emerging Automobile Trends,&#8221; ASIA Electronics Industry, Vol. 26, No.303, pp.28-29, Dec., 2021.<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78, &#8220;SiC\u30fbGaN\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u6280\u8853\u52d5\u5411\u3068\u5fdc\u7528\u5c55\u958b,&#8221; \u5de5\u696d\u6750\u6599\u30002022\u3000\u51ac\u53f7,\u00a0 \u7b2c70\u5dfb\u3001\u7b2c1\u53f7, pp.2~7,\uff08\u4ee4\u548c4\u5e742\u67081\u65e5\u767a\u884c\uff09,\u3000\u65e5\u520a\u5de5\u696d\u65b0\u805e\u793e.<\/li>\n<\/ol>\n<h3>\u8b1b\u6f14 (Invited Lecture)<\/h3>\n<ol>\n<li>\u59da\u3000\u51f1\u502b, &#8220;\u71b1\u5fdc\u529b\u89e3\u6790\u3092\u8003\u616e\u3057\u305fSiC-MOSFET\u7834\u58ca\u30e1\u30ab\u30cb\u30ba\u30e0\u306e\u7814\u7a76&#8221; , \uff08\u516c\uff09\u81ea\u52d5\u8eca\u6280\u8853\u4f1a\u3000\u7b2c8\u56de\u8eca\u8f09\u7528\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u6280\u8853\u90e8\u9580\u59d4\u54e1\u4f1a, 2021\u5e749\u670830\u65e5.<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78, &#8220;Si\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u6700\u65b0\u6280\u8853\u3069\u6280\u8853\u8ab2\u984c\u201d,\u3000\uff08\u516c\uff09\u7cbe\u5bc6\u5de5\u5b66\u4f1a \u30d7\u30e9\u30ca\u30ea\u30bc\u30fc\u30b7\u30e7\u30f3 CMP \u3068\u305d\u306e\u5fdc\u7528\u6280\u8853\u5c02\u9580\u59d4\u54e1\u4f1a,\u7b2c193\u56de\u7814\u7a76\u4f1a, 2021\u5e7410\u67088\u65e5.<\/li>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78,\u00a0 \u00a0&#8220;\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u306e\u6700\u65b0\u52d5\u5411&#8221;, Advanced Metallization Conference 2021, Asia Session (ADMETA plus 2021), 30\u56de\u8a18\u5ff5\u8b1b\u6f14,\u30002021\u5e7410\u670813\u65e5.<\/li>\n<\/ol>\n<h3>\u66f8\u7c4d (Books)<\/h3>\n<ol>\n<li>\u5ca9\u5ba4\u3000\u61b2\u5e78\u76e3\u4fee,\u3000\u201d\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u958b\u767a\u52d5\u5411\u3068\u5fdc\u7528\u5c55\u958b&#8221;,\u30b7\u30fc\u30a8\u30e0\u30b7\u30fc\u51fa\u7248, 2021\u5e748\u6708.\u7b2c1\u7ae0 1. \u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u73fe\u72b6\u30fb\u8ab2\u984c\u30fb\u5c55\u671b\uff08\u57f7\u7b46\uff1a\u5ca9\u5ba4\u61b2\u5e78\uff09,\u7b2c2\u7ae0 1. SiC\u534a\u5c0e\u4f53\uff08\u57f7\u7b46:\u77e2\u91ce\u88d5\u53f8\uff09, \u7b2c3\u7ae0 6. \u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u3092\u7528\u3044\u305f\u96fb\u529b\u5909\u63db\u5668\u306e\u305f\u3081\u306e\u56de\u8def\u65b9\u5f0f\u3068\u8003\u3048\u65b9\uff08\u57f7\u7b46\uff1a\u78ef\u90e8\u9ad8\u7bc4\uff09.<\/li>\n<\/ol>\n\n\n<p><\/p>\n\n\n<p><\/p>\n<p><\/p>","protected":false},"excerpt":{"rendered":"\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002 \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) K. Yao, H. Yano, and\u00a0\u00a0N. Iwamuro,\u00a0&#8220;Inves &#8230;","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5517"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=5517"}],"version-history":[{"count":79,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5517\/revisions"}],"predecessor-version":[{"id":6228,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5517\/revisions\/6228"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=5517"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}