{"id":5706,"date":"2022-05-29T16:29:55","date_gmt":"2022-05-29T07:29:55","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=5706"},"modified":"2025-06-12T11:12:30","modified_gmt":"2025-06-12T02:12:30","slug":"2022%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=5706","title":{"rendered":"2022\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"

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\u8457\u8005\u306b\u4e0b\u7dda<\/span>\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005<\/span>\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002<\/p>\n\n\n\n

\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n\n\n\n
  1. H. Xu, H. Kamada, S. Nomura, H. Chikaraishi, H. Tsutsui and T. Isobe, “A Simple Calculation Method for Center Magnetic Flux Density of a Magnetic Core Electromagnet With a Wide Air Gap,” in IEEE Transactions on Applied Superconductivity<\/em>, vol. 32, no. 6, Sept. 2022, DOI: 10.1109\/TASC.2022.3158350.<\/a><\/li>
  2. H. Xu, S. Nomura, T. Isobe and H. Kamada, “Feasibility Study on a Real-Scale High-Frequency Electromagnets for Magnetic Hyperthermia Base on a Magnetic Scaling Law,” in IEEE Transactions on Applied Superconductivity<\/em>, vol. 32, no. 6, Sept. 2022, Art no. 4401105, DOI: 10.1109\/TASC.2022.3161888.<\/a><\/li>
  3. K. Matsui, T. Tawara, S. Harada, S. Tanaka, H. Sato, H. Yano, and N. Iwamuro,”Significant Improvement of Switching Characteristics in a 1.2-kV SiC SWITCH-MOS by the Application of Kelvin Source Connection,” IEEJ Transaction on Electrical and Electronic Engineering, 2022, doi:10.1002\/tee.23727<\/li>
  4. Y. Kitamura, F. Kato, S. Tanaka, T. Tawara, S. Harada, H. Sato, H. Yano and N. Iwamuro, “Study on Enhancing of the Surge Current Capabilities of Embedded SBDs in SWITCH-MOSs and Body-PiN-Diodes in SiC Trench MOSFETs,” 2022 Jpn. J. Appl. Phys., Vol. 62, pp. SC1007\/1-9, Dec., 2022, DOI: 10.35848\/1347-4065\/aca61b<\/a>.<\/li>
  5. K. Kashiwa, M. Takahashi, Y. Kitamura, H. Yano and N. Iwamuro, “Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs,” 2022 Jpn. J. Appl. Phys., Feb., 2023, DOI: 10.35848\/1347-4065\/acb8bf<\/a>.<\/li><\/ol>\n\n\n\n

    \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings – International)<\/h3>\n\n\n\n
    1. Y. Kitamura, F. Kato, S. Tanaka, T. Tawara, S. Harada, H. Sato, H. Yano and N. Iwamuro, “Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block,” in\u00a0Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2022),\u00a0<\/em>pp. 109-112, 2022. <\/li>
    2. C. Huang, T. Mannen and T. Isobe, “Current Ripple Reduction with Enhanced ZVS Operation Based on Off-time Discrete Control for DCM Inverters to Achieve High efficiency,”2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)<\/em>, Himeji, Japan, May 2022. DOI: 10.23919\/IPEC-Himeji2022-ECCE53331.2022.9807159<\/a><\/li>
    3. S. Uesugi, C. Huang, T. Mannen and T. Isobe, “Experimental Verification of Interleaved Grid-Tied Inverter Using Discontinuous Current Mode with Magnetically Coupled Inductor,” 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)<\/em>, Himeji, Japan, May 2022. DOI: 10.23919\/IPEC-Himeji2022-ECCE53331.2022.9807032<\/a><\/li>
    4. T. Sawada, H. Tadano, K. Shiozaki and T. Isobe, “Continuous Operation of High-Power Half-Bridge with 12 Paralleled GaN Power Devices,” 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)<\/em>, Himeji, Japan, 2022. DOI: 10.23919\/IPEC-Himeji2022-ECCE53331.2022.9806956<\/a><\/li>
    5. S. F\u00f8yen, C. Zhang, M. Molinas, O. Fosso and T. Isobe, “Impedance scanning with chirps for single-phase converters,” 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)<\/em>, Himeji, Japan, 2022. DOI: 10.23919\/IPEC-Himeji2022-ECCE53331.2022.9806874<\/a><\/li>
    6. K. Yao, F. Kato, S. Satoshi, S. Harada, H. Sato, H. Yano and N. Iwamuro, “Enhanced Short-Circuit Capability for 1.2 kV SiC SBD-Integrated Trench MOSFETs using Cu Blocks Sintered on the Source Pad,” in\u00a0Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2022),\u00a0<\/em>pp. 297-300, 2022.<\/li>
    7. K. Kashiwa, K. Yao, H. Yano and N. Iwamuro, “Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis,” in\u00a0Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2022),\u00a0<\/em>pp. 113-116, 2022. <\/li>
    8. B. Seo, T. Isobe and T. Mannen, “Suppression Method of DC Capacitor Currents in a Three-Phase Current Unfolding Inverter Equipped With Ultra-Small DC Capacitors,”2022 International Symposium on Industrial Electronics (ISIE 2022)<\/em>, June, 2022. DOI: 10.1109\/ISIE51582.2022.9831649<\/a><\/li>
    9. Y. Kitamura, T. Tawara, S. Harada, H. Yano and N. Iwamuro, “Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals,” in Ext. Abstr. Solid State Devices and Materials (SSDM 2022),\u00a0<\/em>pp. 701-702, 2022.<\/li>
    10. K. Kashiwa, M. Takahashi, H. Yano and N. Iwamuro, “Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs,” in Ext. Abstr. Solid State Devices and Materials (SSDM 2022),\u00a0<\/em>pp. 703-704, 2022.<\/li>
    11. C. Huang, T. Mannen and T. Isobe, “Inductor Core Loss Estimation and Comparison of Modulations Achieving ZVS for High-Frequency DCM Grid-tied Inverters,” 2022 IEEE Energy Conversion Congress & Expo\u00a0(ECCE 2022)<\/em>, Detroit, MI, USA, Oct, 2022. DOI: 10.1109\/ECCE50734.2022.9947599<\/a><\/li>
    12. Y. Fujisaki, T. Isobe and T. Mannen, \u201cAnalysis and Design of Gate Controlless Hybrid Circuit Breaker Utilizing SiC-JFET for Low Voltage DC System,\u201d 2022 IEEE Energy Conversion Congress & Expo\u00a0(ECCE 2022)<\/em>, Detroit, MI, USA, Oct, 2022. DOI: 10.1109\/ECCE50734.2022.9947532<\/a><\/li>
    13. S. Kohno, T. Isobe and T. Mannen, \u201cCurrent Control for Multi-phase Machine under Multiple Open-Faults condition using Gram-Schmidt Orthonormalization,\u201d 2022 IEEE Southern Power Electronics Conference\u00a0(SPEC 2022)<\/em>, Nadi, Fiji, Dec 2022. DOI: 10.1109\/SPEC55080.2022.10058319<\/a><\/li><\/ol>\n\n\n\n

      \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings – Domestic)<\/h3>\n\n\n\n
      1. \u677e\u5ca1\u4ea8\u5353\uff0c\u78ef\u90e8\u2fbc\u7bc4\uff0c\u52a0\u85e4\u53f2\u6a39\uff0c\u5148\u5d0e\u7d14\u5bff\uff0c\u4f50\u85e4\u5f18\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u201c\u96fb\u6c17\u71b1\u9023\u6210\u89e3\u6790\u306b\u3088\u308b\u30e2\u30fc\u30bf\u99c6\u52d5\u6642\u306e SiC MOSFET \u306e\u6e29\u5ea6\u63a8\u5b9a\u201d\uff0c2022\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u4e0a\u667a\u5927\u5b66\uff0c2022\u5e748\u670830\u65e5\uff5e9\u67081\u65e5<\/li>
      2. \u85e4\u5d0e\u7965\u5f18\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u201cSiC-JFET\u306e\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30f3\u7279\u6027\u3092\u6d3b\u7528\u3057\u305f\u30b2\u30fc\u30c8\u5236\u5fa1\u4e0d\u8981\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u906e\u65ad\u5668\u306e\u52d5\u4f5c\u89e3\u6790\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u7a2e\u5b50\u5cf6\uff0c2022\u5e749\u670821\u65e5\uff5e9\u670822\u65e5<\/li>
      3. Huang Cheng\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201c\u9ad8\u5468\u6ce2DCM\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308bZVS\u3092\u53ef\u80fd\u3068\u3059\u308b\u5909\u8abf\u306e\u6bd4\u8f03\u3068\u30a4\u30f3\u30c0\u30af\u30bf\u30b3\u30a2\u30ed\u30b9\u306e\u63a8\u5b9a\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u7a2e\u5b50\u5cf6\uff0c2022\u5e749\u670821\u65e5\uff5e9\u670822\u65e5<\/li>
      4. \u79cb\u8449\u6df3\u5b8f\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c3\u30ec\u30d9\u30eb\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u3092\u7528\u3044\u305f 4H-SiC MOSFET\u306e\u754c\u9762\u8fd1\u508d\u9178\u5316\u819c\u30c8\u30e9\u30c3\u30d7\u306e \u9178\u5316\u819c\u5185\u5bc6\u5ea6\u5206\u5e03\u306e\u691c\u8a0e\u300d\uff0c\u7b2c83\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c2022\u5e749\u670822~26\u65e5<\/li>
      5. \u5186\u57ce\u5bfa\u4f51\u54c9, \u5ca9\u5ba4 \u61b2\u5e78, \u77e2\u91ce \u88d5\u53f8\uff0c\u300cAC \u30b2\u30fc\u30c8\u30b9\u30c8\u30ec\u30b9\u5370\u52a0\u306b\u3088\u308b SiC-MOSFET \u306e\u3057\u304d\u3044\u5024\u96fb\u5727\u5909\u52d5\u8a55\u4fa1\u300d\uff0c\u7b2c83\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a\uff0c2022\u5e749\u670822~26\u65e5<\/li>
      6. \u5ca9\u5ba4\u61b2\u5e78\uff0c \u300cSiC MOSFET\u9ad8\u6027\u80fd\u5316\u30fb\u9ad8\u4fe1\u983c\u5316\u306e\u9032\u5c55\u300d, WideG\u534a\u5c0e\u4f53\u5b66\u4f1a\u7279\u5225\u516c\u958b\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0,\u30002022\u5e7410\u67087\u65e5.<\/li>
      7. \u78ef\u90e8 \u9ad8\u7bc4\uff0cHuang Cheng\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u300c\u30bc\u30ed\u96fb\u5727\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u3092\u53ef\u80fd\u3068\u3059\u308b\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u306e\u5909\u8abf\u6cd5\u306e\u63d0\u6848\u3068GaN-HEMT\u3092\u7528\u3044\u305f\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u3078\u306e\u9069\u7528\u300d\uff08\u62db\u5f85\u8b1b\u6f14\uff09<\/em>\uff0c\u4ee4\u548c4\u5e74\u96fb\u6c17\u95a2\u4fc2\u5b66\u4f1a\u95a2\u897f\u9023\u5408\u5927\u4f1a\uff0c\u30aa\u30f3\u30e9\u30a4\u30f3\uff0c2022\u5e7411\u670826\u65e5\uff5e27\u65e5<\/li>
      8. \u6cb3\u91ce\u821c\u751f, \u78ef\u90e8\u9ad8\u7bc4, \u842c\u5e74\u667a\u4ecb, “\u30b0\u30e9\u30e0\u30b7\u30e5\u30df\u30c3\u30c8\u76f4\u4ea4\u5316\u6cd5\u3092\u62e1\u5f35\u30af\u30e9\u30fc\u30af\u5909\u63db\u884c\u5217\u306b\u9069\u7528\u3057\u305f\u591a\u76f8\u96fb\u52d5\u6a5f\u8907\u6570\u76f8\u30aa\u30fc\u30d7\u30f3\u6545\u969c\u72b6\u614b\u306e\u975e\u5bfe\u79f0\u96fb\u52d5\u6a5f\u96fb\u6d41\u5236\u5fa1”, \u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u5bb6\u96fb\u30fb\u6c11\u751f\/\u81ea\u52d5\u8eca\u5408\u540c\u7814\u7a76\u4f1a, \u6771\u4eac\u6d77\u6d0b\u5927\u5b66\u8d8a\u4e2d\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9, 2022\u5e7412\u670812\u65e5~13\u65e5<\/li>
      9. \u79cb\u8449\u6df3\u5b8f\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c3\u30ec\u30d9\u30eb\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6cd5\u3092\u7528\u3044\u305f SiC MOSFET\u306e\u754c\u9762\u7279\u6027\u8a55\u4fa1\uff1a\u9178\u5316\u819c\u7a92\u5316\u51e6\u7406\u3068\u754c\u9762\u6b20\u9665\u91cf\u306e\u95a2\u4fc2\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c9\u56de\u8b1b\u6f14\u4f1a\uff0c2022\u5e7412\u670820~21\u65e5<\/li>
      10. \u5186\u57ce\u5bfa\u4f51\u54c9\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c\u30d0\u30a4\u30dd\u30fc\u30e9AC\u30b2\u30fc\u30c8\u30b9\u30c8\u30ec\u30b9\u5370\u52a0\u306b\u3088\u308bSiC-MOSFET\u306e\u3057\u304d\u3044\u5024\u96fb\u5727\u5909\u52d5\u8a55\u4fa1\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c9\u56de\u8b1b\u6f14\u4f1a\uff0c2022\u5e7412\u670820~21\u65e5<\/li>
      11. \u68ee\u6d77\u6597\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c\u30e2\u30ce\u30ea\u30b7\u30c3\u30af\u76f8\u88dc\u578b\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u5411\u3051\u305f4H-SiC\u6a2a\u578bp-ch SJ-MOSFET\u306e\u69cb\u9020\u8a2d\u8a08\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c9\u56de\u8b1b\u6f14\u4f1a\uff0c2022\u5e7412\u670820~21\u65e5<\/li>
      12. SEO BOSEUNG\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c \u842c\u5e74\u667a\u4ecb\uff0c\u201c\u96fb\u6d41\u4e0d\u9023\u7d9a\u30e2\u30fc\u30c9\u3092\u9069\u7528\u3057\u305f\u6ce2\u5f62\u7d44\u307f\u63db\u3048\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u4f4e\u529b\u7387\u904b\u8ee2\u306e\u691c\u8a3c\u201d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u7acb\u547d\u9928\u5927\u5b66\u3073\u308f\u3053\u30fb\u304f\u3055\u3064\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2023\u5e741\u670826\u65e5\uff5e1\u670827\u65e5<\/li>
      13. \u7530\u6751\u5feb\u58eb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u201c\u30d5\u30eb\u30d6\u30ea\u30c3\u30b8\u578b\u76f4\u5217\u88dc\u511f\u88c5\u7f6e\u3092\u7528\u3044\u305f\u30eb\u30fc\u30d7\u914d\u96fb\u7cfb\u7d71\u306b\u304a\u3051\u308b\u6f6e\u6d41\u5236\u5fa1\u306e\u691c\u8a0e\u201d\uff0c\u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u540d\u8b77\u5e02\u7523\u696d\u652f\u63f4\u30bb\u30f3\u30bf\u30fc\uff0c2023\u5e743\u67086\u65e5\uff5e3\u67087\u65e5<\/li>
      14. Cheng Huang\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u201cZVS\u52d5\u4f5c\u3092\u5b9f\u73fe\u53ef\u80fd\u306a\u9ad8\u5468\u6ce2DCM\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u30a4\u30f3\u30c0\u30af\u30bf\u9285\u640d\u306e\u8a55\u4fa1\u201d\uff0c\u4ee4\u548c5\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5927\u5b66\uff0c2023\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>
      15. \u85e4\u5d0e\u7965\u5f18\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u201c\u4f4e\u3057\u304d\u3044\u5024\u30ab\u30b9\u30b3\u30fc\u30c9\u30c7\u30d0\u30a4\u30b9\u3092\u9069\u7528\u3057\u305f\u30b2\u30fc\u30c8\u5236\u5fa1\u4e0d\u8981\u30cf\u30a4\u30d6\u30ea\u30c3\u30c9\u906e\u65ad\u5668\u306e\u5b9f\u9a13\u691c\u8a3c\u201d\uff0c\u4ee4\u548c5\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5927\u5b66\uff0c2023\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>
      16. \u7530\u4e2d\u5927\u6681\uff0c\u68ee \u8ce2\u592a\u90ce\uff0c\u91d1\u4e95\u96c4\u5e73\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u559c\u591a\u82f1\u6cbb\uff0c\u67f3\u539f\u82f1\u4eba\uff0c\u201c\u6570MHz\u306e\u4ea4\u6d41\u78c1\u5316\u904e\u7a0b\u6e2c\u5b9a\u88c5\u7f6e\u306e\u958b\u767a\u201d\uff0c\u4ee4\u548c5\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5927\u5b66\uff0c2023\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li>
      17. \u7530\u6751\u5feb\u58eb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u201c\u30d5\u30eb\u30d6\u30ea\u30c3\u30b8\u578b\u76f4\u5217\u88dc\u511f\u88c5\u7f6e\u3092\u7528\u3044\u305f\u30eb\u30fc\u30d7\u72b6\u914d\u96fb\u7cfb\u7d71\u306e\u6f6e\u6d41\u5236\u5fa1\u306e\u691c\u8a3c\u201d\uff0c\u4ee4\u548c5\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5927\u5b66\uff0c2023\u5e743\u670815\u65e5\uff5e3\u670817\u65e5<\/li><\/ol>\n\n\n\n

        \u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b (Magazines)<\/h3>\n\n\n\n
        1. \u5ca9\u5ba4\u61b2\u5e78\u3000\u300c\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u73fe\u72b6\u3068\u5c06\u6765\u52d5\u5411\u300d\u3001\u5149\u6280\u8853\u30b3\u30f3\u30bf\u30af\u30c8, Vol.60, no.7, pp.3-10, 2022.<\/li><\/ol>\n\n\n\n

          \u8b1b\u6f14 (Invited Lecture)<\/h3>\n\n\n\n
          1. \u5317\u6751\u96c4\u5927\uff0c\u201cSiC\u30c7\u30d0\u30a4\u30b9\u306e\u8010\u91cf\u5411\u4e0a\u201d\uff0c\u7b2c21\u56de TPEC \u30d0\u30ea\u30e5\u30fc\u30fb\u6226\u7565\u4f1a\u8b70\uff0c2023\u5e741\u670820\u65e5<\/li><\/ol>\n\n\n\n

            \u66f8\u7c4d (Books)<\/h3>\n\n\n\n
            1. \u5ca9\u5ba4\u61b2\u5e78\u76e3\u4fee\u3000\u300c\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u306e\u8ab2\u984c\u3068\u8a55\u4fa1\u6280\u8853\u300d, S\uff06T\u51fa\u7248, 2022\u5e747\u6708<\/li>
            2. Noriyuki Iwamuro, Silicon Power Devices, In: Rudan, M., Brunetti, R., Reggiani, S. (eds) Springer Handbook of Semiconductor Devices, pp.423-490. Springer Handbooks. Springer, Cham. https:\/\/doi.org\/10.1007\/978-3-030-79827-7_13<\/li><\/ol>\n\n\n

              <\/p>\n

              <\/p>","protected":false},"excerpt":{"rendered":"\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002 \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) H. Xu, H. Kamada, S. Nomura, H. Chikaraishi, H …","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5706"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=5706"}],"version-history":[{"count":125,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5706\/revisions"}],"predecessor-version":[{"id":7024,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/5706\/revisions\/7024"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=5706"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}