{"id":6317,"date":"2023-11-20T14:00:42","date_gmt":"2023-11-20T05:00:42","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=6317"},"modified":"2025-06-12T11:11:42","modified_gmt":"2025-06-12T02:11:42","slug":"2023%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=6317","title":{"rendered":"2023\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<p><\/p>\n\n\n<p>\u8457\u8005\u306b<span style=\"text-decoration: underline;\">\u4e0b\u7dda<\/span>\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c<span style=\"text-decoration: underline;\">\u4e0b\u7dda\u306e\u8457\u8005<\/span>\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002<\/p>\n\n\n\n<h3>\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n\n\n\n<ol><li>S. F\u00f8yen, C. Zhang, Y. Zhang, <span style=\"text-decoration: underline;\">T. Isobe<\/span>, O. B. Fosso, X. Cai, and M. Molinas, &#8220;Frequency Scanning of Weakly Damped Single-Phase VSCs With Chirp Error Control,&#8221; in <em>IEEE Transactions on Power Electronics<\/em>, vol. 38, no. 9, pp. 10692-10701, Sept. 2023, <a href=\"https:\/\/doi.org\/10.1109\/TPEL.2023.3281746\" title=\"https:\/\/doi.org\/10.1109\/TPEL.2023.3281746\">DOI: 10.1109\/TPEL.2023.3281746<\/a>.<\/li><li>C. Huang, T. Mannen and T. Isobe, \u201cFull ZVS Achievement for DCM Grid-tied Inverter with Improved Average Current Model and Considering Non-linear Parasitic Capacitance,\u201d <em>IEEE Journal of Emerging and Selected Topics in Power Electronics<\/em>,&nbsp;vol. 12, no. 1, pp. 472-485, Feb. 2024, <a href=\"https:\/\/ieeexplore.ieee.org\/document\/10332156\" title=\"https:\/\/ieeexplore.ieee.org\/document\/10332156\">DOI: 10.1109\/JESTPE.2023.3336693<\/a>.<\/li><li><span style=\"text-decoration: underline;\">T. Sawada<\/span>, H. Tadano, K. Shiozaki, <span style=\"text-decoration: underline;\">T. Isobe<\/span>, \u201cContinuous Operation of a Half-Bridge with Multi-Parallel GaN Power Devices for Increased Current Capability,\u201d <em>IEEJ Journal of Industry Applications<\/em>, vol. 12, no. 4, pp. 695-700, 2023 <a href=\"https:\/\/doi.org\/10.1541\/ieejjia.22007958\">DOI: 10.1541\/ieejjia.22007958<\/a>.<\/li><li><span style=\"text-decoration: underline;\">T. Mannen<\/span> and K. Wada, &#8220;Overvoltage Suppression in Initial Charge Control for DC Capacitor Using Multiple Leg Short-Circuits With SiC-MOSFETs in Power Converters,&#8221;&nbsp;<em>IEEE Open Journal of Power Electronics<\/em>, vol. 4, pp. 703-715, 2023, <a href=\"https:\/\/ieeexplore.ieee.org\/document\/10210650\" title=\"DOI: 10.1109\/OJPEL.2023.3303255\">DOI: 10.1109\/OJPEL.2023.3303255<\/a>.<\/li><\/ol>\n\n\n\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings &#8211; International)<\/h3>\n\n\n\n<ol><li>T. Mannen, &#8220;Peak Transmitting-Power Reduction of Isolated DC-DC Converters in Solid-State-Transformer Equipped with Reduced Capacitors Utilizing Third-Order Circulating Current in Delta-Connection,&#8221;&nbsp;<em>2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 &#8211; ECCE Asia)<\/em>, Jeju Island, Korea, Republic of, 2023, pp. 406-411, <a href=\"https:\/\/ieeexplore.ieee.org\/document\/10213617\">DOI: 10.23919\/ICPE2023-ECCEAsia54778.2023.10213617<\/a>.<\/li><li>M. Takahashi, H. Yano, N. Iwamuro and S. Harada, &#8220;Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress,&#8221; <em>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)<\/em>, Hong Kong, 2023, pp. 250-253, <a href=\"doi: 10.1109\/ISPSD57135.2023.10147463.\">DOI: 10.1109\/ISPSD57135.2023.10147463<\/a>.<\/li><li>C. Huang, T. Mannen and T. Isobe, &#8220;Comparative Analysis of Inductor Loss for High-Frequency DCM Grid-Tied Inverters with Modulations Strategies Achieving ZVS,&#8221;&nbsp;<em>2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)<\/em>, Shanghai, China, 2023, pp. 241-246, <a href=\"https:\/\/ieeexplore.ieee.org\/document\/10215233\">DOI: 10.1109\/PEDG56097.2023.10215233<\/a>.<\/li><li>C. Huang, T. Mannen and T. Isobe, &#8220;Improved Burst Mode Operation for DAB Converters to Achieve ZVS in Full-Load-Range by Considering Device Voltage Oscillation,&#8221;&nbsp;<em>2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL)<\/em>, Ann Arbor, MI, USA, 2023, pp. 1-7, <a href=\"https:\/\/ieeexplore.ieee.org\/document\/10221120\">DOI: 10.1109\/COMPEL52896.2023.10221120<\/a>.<\/li><li>Yonghyun Cho, Cheng Huang, Tomoyuki Mannen, Takanori Isobe, &#8220;Design Consideration and Demonstration of Dual-Active Bridge Converter Using 13-kV SiC-MOSFETs Packaged in TO-268,&#8221; in&nbsp;<em>Proceedings of 2023 European Conference on Power Electronics and Applications (EPE\u201923 ECCE Europe)<\/em>&#8220;, Sep. 4-8, 2023, <a href=\"https:\/\/doi.org\/10.23919\/EPE23ECCEEurope58414.2023.10264433\" target=\"_blank\" rel=\"noreferrer noopener\">DOI: 10.23919\/EPE23ECCEEurope58414.2023.10264433<\/a><\/li><li>Yuya Enjoji, Noriyuki Iwamuro and Hiroshi Yano, &#8220;Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress&#8221; <em>International Conference on SIlicon Carbide and Related Materials (ICSCRM)<\/em>, Sorrento, Italy, Mo.C.11, Sept. 2023.<\/li><li>H. Tamura, T. Isobe and T. Mannen, &#8220;Line Loss Minimization and Current Regulation in a Loop Distribution System using Full-bridge Series Compensator,&#8221; <em>2023 IEEE Energy Conversion Congress &amp; Expo (ECCE2023)<\/em>, Nashville, TN, USA, Nov, 2023, pp. 1018-1024, <a href=\"10.1109\/ECCE53617.2023.10362431\" target=\"_blank\" rel=\"noreferrer noopener\">DOI: 10.1109\/ECCE53617.2023.10362431<\/a>.<\/li><li><span style=\"text-decoration: underline;\">T. Mannen<\/span>, <span style=\"text-decoration: underline;\">B. Seo<\/span>, <span style=\"text-decoration: underline;\">T. Isobe<\/span> and H. P. N., &#8220;Phase-Lagging Operation in a Buck-Type Current Unfolding Converter with Discontinuous Conduction Mode,&#8221;&nbsp;<em>2023 IEEE International Future Energy Electronics Conference (IFEEC)<\/em>, Sydney, Australia, 2023, pp. 555-559, <a href=\"https:\/\/ieeexplore.ieee.org\/document\/10458481\">DOI: 10.1109\/IFEEC58486.2023.10458481<\/a>.<\/li><\/ol>\n\n\n\n<h3>\u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings &#8211; Domestic)<\/h3>\n\n\n\n<ol><li>\u8d99 \u9f8d\u8ce2\uff0c\u842c\u5e74 \u667a\u4ecb\uff0c\u78ef\u90e8 \u9ad8\u7bc4\uff0c\u300c\u914d\u96fb\u7db2\u306b\u76f4\u63a5\u9023\u7cfb\u3059\u308b\u96fb\u529b\u5909\u63db\u5668\u5b9f\u73fe\u306b\u5411\u3051\u3066\u7d76\u7e01DC\/DC\u30b3\u30f3\u30d0\u30fc\u30bf\u3078\u306e13 kV\u8010\u5727SiC-MOSFET\u306e\u9069\u7528\u53ef\u80fd\u6027\u306e\u691c\u8a0e\u300d\uff0c2023\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5de5\u696d\u5927\u5b66\uff0c2023\u5e748\u670822\u65e5\uff5e8\u670824\u65e5<\/li><li>Huang Cheng\uff0c\u842c\u5e74 \u667a\u4ecb\uff0c\u78ef\u90e8 \u9ad8\u7bc4\uff0c\u300c\u9593\u6b20\u904b\u8ee2\u306b\u304a\u3051\u308b\u30c7\u30d0\u30a4\u30b9\u96fb\u5727\u5171\u632f\u3092\u6d3b\u7528\u3057\u305f\u5168\u8ca0\u8377\u9818\u57df\u306e\u30bc\u30ed\u96fb\u5727\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u52d5\u4f5c\u304c\u53ef\u80fd\u306a DAB \u30b3\u30f3\u30d0\u30fc\u30bf\u306e\u5b9f\u6a5f\u691c\u8a3c\u300d\uff0c2023\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5de5\u696d\u5927\u5b66\uff0c2023\u5e748\u670822\u65e5\uff5e8\u670824\u65e5<\/li><li>\u842c\u5e74 \u667a\u4ecb\uff0c\u78ef\u90e8 \u9ad8\u7bc4\uff0c\u300c\u5bc4\u751f\u30a4\u30f3\u30c0\u30af\u30bf\u30f3\u30b9\u3092\u8003\u616e\u3057\u305f\u89e3\u6790\u306b\u57fa\u3065\u304fSiC-MOSFET\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u6ce2\u5f62\u7b97\u51fa\u3068\u30a2\u30af\u30c6\u30a3\u30d6\u30b2\u30fc\u30c8\u3092\u7528\u3044\u305f\u30b5\u30fc\u30b8\u96fb\u5727\u306e\u30d5\u30e9\u30c3\u30c8\u30c8\u30c3\u30d7\u99c6\u52d5\u306e\u691c\u8a0e\u300d\uff0c2023\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u540d\u53e4\u5c4b\u5de5\u696d\u5927\u5b66\uff0c2023\u5e748\u670822\u65e5\uff5e8\u670824\u65e5<\/li><li><span style=\"text-decoration: underline;\">\u7530\u6751\u5feb\u58eb<\/span>\uff0c<span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>\uff0c<span style=\"text-decoration: underline;\">\u842c\u5e74\u667a\u4ecb<\/span>\uff0c\u67d3\u8c37\u3000\u6e80\uff0c\u539f\u7530\u4fe1\u4ecb\uff0c\u300c\u30d5\u30eb\u30d6\u30ea\u30c3\u30b8\u578b\u76f4\u5217\u88dc\u511f\u88c5\u7f6e\u3092\u7528\u3044\u305f\u30eb\u30fc\u30d7\u914d\u96fb\u7cfb\u7d71\u306b\u304a\u3051\u308b\u7dda\u8def\u96fb\u6d41\u5236\u5fa1\u3068\u9001\u96fb\u640d\u5931\u6700\u5c0f\u5316\u300d\uff0c\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u4e5d\u5dde\u5927\u5b66\uff0c2023\u5e7410\u670825\u65e5\uff5e10\u670827\u65e5<\/li><li>\u68ee\u6d77\u6597\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c4H-SiC\u6a2a\u578bp-ch SJ-MOSFET\u306e\u30aa\u30f3\u62b5\u6297\u3068\u5bc4\u751f\u5bb9\u91cf\u306e\u95a2\u4fc2\u8a55\u4fa1\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c10\u56de\u8b1b\u6f14\u4f1a\uff0cIA-21\uff0c2023\u5e7411\u670830\u65e5~12\u67081\u65e5<\/li><li>\u677e\u6728\u5eb7\u592a\u90ce\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300cSiC \u30c8\u30ec\u30f3\u30c1 MOSFET \u3078\u306e\u96fb\u5b50\u7dda\u7167\u5c04\u52b9\u679c\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c10\u56de\u8b1b\u6f14\u4f1a\uff0c IA-22\uff0c 2023\u5e7411\u670830\u65e5~12\u67081\u65e5<\/li><li>\u5186\u57ce\u5bfa\u4f51\u54c9\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300cAC\u30b2\u30fc\u30c8\u30b9\u30c8\u30ec\u30b9\u306b\u3088\u308bSiC MOSFET\u306e\u3057\u304d\u3044\u5024\u96fb\u5727\u3068\u30b5\u30d6\u30b9\u30ec\u30c3\u30b7\u30e7\u30eb\u30c9\u30b9\u30a4\u30f3\u30b0\u306e\u5909\u52d5\u8a55\u4fa1\u300d\uff0c\u5148\u9032\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u5206\u79d1\u4f1a \u7b2c10\u56de\u8b1b\u6f14\u4f1a\uff0c IA-23\uff0c 2023\u5e7411\u670830\u65e5~12\u67081\u65e5<\/li><li>\u4e95\u624b\u667a\u4e5f\uff0c\u5e73\u702c\u7950\u5b50\uff0c<span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>\uff0c\u300c\u30a4\u30f3\u30d0\u30fc\u30bf\u96fb\u6e90\u304c\u63a5\u7d9a\u3055\u308c\u305f\u96fb\u529b\u7cfb\u7d71\u306e\u30a4\u30f3\u30d4\u30fc\u30c0\u30f3\u30b9\u30d9\u30fc\u30b9\u5b89\u5b9a\u6027\u89e3\u6790\u6280\u8853\u78ba\u7acb\u306b\u5411\u3051\u305f\u5b9f\u8a3c\u8a66\u9a13\u5831\u544a\u300d\uff0c\u96fb\u6c17\u5b66\u4f1a\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u5bb6\u96fb\u30fb\u6c11\u751f\/\u81ea\u52d5\u8eca\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u795e\u6238\u5927\u5b66\u7d71\u5408\u7814\u7a76\u62e0\u70b9\uff0c2024\u5e7412\u670814\u65e5\u301c15\u65e5<\/li><li>\u9234\u6728\u967d\u592a\uff0cCheng Huang\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u300c3.3 kV SiC-MOSFET\u3092\u7528\u3044\u305f\u96fb\u6e90 2 \u500d\u5468\u6ce2\u6570\u3067 \u4f1d\u9001\u96fb\u529b\u3092\u8108\u52d5\u3055\u305b\u308b SST \u5411\u3051 DAB \u30b3\u30f3\u30d0\u30fc\u30bf\u306e\u640d\u5931\u8a55\u4fa1\u300d\uff0c\u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u798f\u6c5f\u6587\u5316\u4f1a\u9928\uff0c2024\u5e743\u67087\u65e5\uff5e3\u67088\u65e5<\/li><li>\u5ca1\u6751\u6709\u8d77\uff0c\u5c0f\u539f\u79c0\u5dba\uff0c<span style=\"text-decoration: underline;\">\u9234\u6728\u967d\u592a<\/span>\uff0c<span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>\uff0c\u300c3.3kV SiC-MOSFET\u3092\u7528\u3044\u305fSST\u306b\u304a\u3051\u308b\u9ad8\u5727\u30ad\u30e3\u30d1\u30b7\u30bf\u3068\u9023\u7cfb\u30a4\u30f3\u30c0\u30af\u30bf\u306e\u5c0f\u578b\u5316\u306b\u95a2\u3059\u308b\u691c\u8a0e\u300d\uff0c\u96fb\u529b\u6280\u8853\/\u96fb\u529b\u7cfb\u7d71\u6280\u8853\/\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u798f\u6c5f\u6587\u5316\u4f1a\u9928\uff0c2024\u5e743\u67087\u65e5\uff5e3\u67088\u65e5<\/li><li>\u7530\u6751\u5feb\u58eb\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u842c\u5e74\u667a\u4ecb\uff0c\u300c\u30bb\u30eb\u96fb\u5727\u4e0d\u5747\u7b49\u30de\u30eb\u30c1\u30ec\u30d9\u30eb\u65b9\u5f0f\u306b\u3088\u308b\u30d5\u30eb\u30d6\u30ea\u30c3\u30b8\u578b\u76f4\u5217\u88dc\u511f\u88c5\u7f6e\u306e\u9ad8\u8abf\u6ce2\u96fb\u5727\u6700\u5c0f\u5316\u300d\uff0c\u4ee4\u548c6\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5fb3\u5cf6\u5927\u5b66\uff0c2024\u5e743\u670814\u65e5\uff5e3\u670816\u65e5<\/li><li>\u83ca\u6c60\u771f\u77e2\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u300cSiC-MOSFET \u5185\u8535PiN\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u7279\u6027\u89e3\u6790\u300d\uff0c\u4ee4\u548c6\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5fb3\u5cf6\u5927\u5b66\uff0c2024\u5e743\u670814\u65e5\uff5e3\u670816\u65e5<\/li><li>\u9234\u6728\u4e00\u5e83\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u300c1.2-kV SiC MOSFET\u8ca0\u8377\u77ed\u7d61\u8010\u91cf\u306e\u6e29\u5ea6\u4f9d\u5b58\u6027\u89e3\u6790\u300d\uff0c\u4ee4\u548c6\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5fb3\u5cf6\u5927\u5b66\uff0c2024\u5e743\u670814\u65e5\uff5e3\u670816\u65e5<\/li><li>\u68ee\u6d77\u6597\uff0c\u5ca9\u5ba4\u61b2\u5e78\uff0c\u77e2\u91ce\u88d5\u53f8\uff0c\u300c4H-SiC\u6a2a\u578bp-ch SJ-MOSFET\u306e\u30b2\u30fc\u30c8\uff0d\u30c9\u30ec\u30a4\u30f3\u9593\u5bc4\u751f\u5bb9\u91cf\u7279\u6027\u89e3\u6790\u300d\uff0c\u4ee4\u548c6\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5fb3\u5cf6\u5927\u5b66\uff0c2024\u5e743\u670814\u65e5\uff5e3\u670816\u65e5<\/li><li>\u7530\u4e2d\u5927\u6681\uff0c<span style=\"text-decoration: underline;\">\u842c\u5e74\u667a\u4ecb<\/span>\uff0c<span style=\"text-decoration: underline;\">\u78ef\u90e8\u9ad8\u7bc4<\/span>\uff0c\u559c\u591a\u82f1\u6cbb\uff0c\u67f3\u539f\u82f1\u4eba\uff0c\u300c\u6570MHz\u306e\u4ea4\u6d41\u78c1\u5316\u904e\u7a0b\u6e2c\u5b9a\u88c5\u7f6e\u306e\u958b\u767a\uff08\u2161\uff09\u300d\uff0c\u4ee4\u548c6\u5e74\u96fb\u6c17\u5b66\u4f1a\u5168\u56fd\u5927\u4f1a\uff0c\u5fb3\u5cf6\u5927\u5b66\uff0c2024\u5e743\u670814\u65e5\uff5e3\u670816\u65e5<\/li><\/ol>\n\n\n\n<h3>\u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b (Magazines)<\/h3>\n\n\n\n<ol><li>\u78ef\u90e8\u9ad8\u7bc4:\u300c\uff08\u89e3\u8aac\uff09\u96fb\u6c17\u81ea\u52d5\u8eca\u7528\u30d1\u30ef\u30fc\u30c8\u30ec\u30a4\u30f3\u306b\u7528\u3044\u3089\u308c\u308b\u30a4\u30f3\u30d0\u30fc\u30bf\u6280\u8853\u300d, \u8a08\u6e2c\u3068\u5236\u5fa1, Vol. 62, No. 11, pp. 670-674, 2023. <a href=\"https:\/\/doi.org\/10.11499\/sicejl.62.670\">DOI: 10.11499\/sicejl.62.670<\/a><\/li><\/ol>\n\n\n\n<h3>\u8b1b\u6f14 (Invited Lecture)<\/h3>\n\n\n<p><\/p>\n<p><\/p>","protected":false},"excerpt":{"rendered":"\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002 \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) S. F\u00f8yen, C. Zhang, Y. Zhang, T. Isobe, O. B.  &#8230;","protected":false},"author":107,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/6317"}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/107"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=6317"}],"version-history":[{"count":108,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/6317\/revisions"}],"predecessor-version":[{"id":7022,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/6317\/revisions\/7022"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=6317"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}