{"id":7432,"date":"2026-07-27T16:22:28","date_gmt":"2026-07-27T07:22:28","guid":{"rendered":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=7432"},"modified":"2026-10-19T08:27:57","modified_gmt":"2026-10-18T23:27:57","slug":"2026%e5%b9%b4%e5%ba%a6%e3%81%ae%e7%a0%94%e7%a9%b6%e6%a5%ad%e7%b8%be","status":"publish","type":"page","link":"http:\/\/power.bk.tsukuba.ac.jp\/?page_id=7432","title":{"rendered":"2026\u5e74\u5ea6\u306e\u7814\u7a76\u696d\u7e3e"},"content":{"rendered":"<\/p>\n

\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002<\/p>\n<\/p>\n\n\n

\u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals)<\/h3>\n\n\n\n
    \n
  1. K. Suzuki, H. Yano and N. Iwamuro, “Comparative Study of Avalanche and Short-Circuit Reliability in 1.2-kV SiC MOSFETs,” in IEEE Transactions on Electron Devices, vol. 73, no. 7, pp. 4074-4082, July 2026, doi: 10.1109\/TED.2026.3697283.<\/li>\n<\/ol>\n\n\n\n

    \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings – International)<\/h3>\n\n\n\n
      \n
    1. C. Huang, S. Sasaki and T. Isobe, “ZVS Modulation Using DCM for Four-Quadrant Operation of Full-Bridge Grid-Tied Inverters,” 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 – ECCE Asia)<\/em>, Nagasaki, Japan, 2026, pp. 1-6, doi: 10.23919\/IPEC-Nagasaki2026-EC64663.2026.11596747<\/a>.<\/li>\n\n\n\n
    2. C. Huang, S. Sasaki and T. Isobe, “Optimizing ZVS-Capable DCM for High-Efficiency Grid-Tied Inverters: Can It Be Better than BCM?,” 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 – ECCE Asia)<\/em>, Nagasaki, Japan, 2026, pp. 1-6, doi: 10.23919\/IPEC-Nagasaki2026-EC64663.2026.11597375<\/a>.<\/li>\n\n\n\n
    3. S. Sasaki, C. Huang and T. Isobe, “Improved Current Regulation in CRM-Operated Totem-Pole PFC by Replacing the Blank Interval with a Modified DCM at the Zero Crossing,” 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 – ECCE Asia)<\/em>, Nagasaki, Japan, 2026, pp. 1-7, doi: 10.23919\/IPEC-Nagasaki2026-EC64663.2026.11597528<\/a>.<\/li>\n\n\n\n
    4. K. Takenaka, I. Inui, H. Enokura, T. Kawakami and T. Isobe, “Experimental Verification of a Circuit Design Method for Improving Frequency Characteristics of a ZETA Converter Based on Eliminating Right-Half-Plane Zero,” 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 – ECCE Asia)<\/em>, Nagasaki, Japan, 2026, pp. 1-5, doi: 10.23919\/IPEC-Nagasaki2026-EC64663.2026.11596955<\/a>.<\/li>\n\n\n\n
    5. C. Huang, T. Isobe, Yohei Moriyama, and Satoru Nate, “A Practical Coss Hysteresis Loss Estimation Method for GaN-HEMTs Based on Resonance Between Device Output Capacitance and Inductors,” 2026 IEEE 27th Workshop on Control and Modeling for Power ElectronicsInternational Power Electronics<\/em>, Cambridge, England, 2026<\/li>\n\n\n\n
    6. S. Uchiyama, H. Yano, N. Iwamuro, “Quantitative Extraction of Channel and JFET Resistances in SiC MOSFETs and Their Impact on the Ron\u2013SCWT Trade-off”, 2026 The 23nd International Conference on Silicon Carbide and Related Materials (ICSCRM), Yokohama Japan, pp185-186.<\/li>\n\n\n\n
    7. T. Hidaka, N. Iwamuro, H. Yano, “Recombination-Enhanced Interface State Generation in SiC MOSFET sunder AC Gate Stress Evaluated by Charge Pumping”, 2026 The 23nd International Conference on Silicon Carbide and Related Materials (ICSCRM), Yokohama Japan, pp221-222.<\/li>\n\n\n\n
    8. R. Momota, M. Sometani, H. Hirai, H. Watanabe, T. Isobe, N. Iwamuro, H. Yano, “Suppression of the Long-Term Component of Threshold Voltage Shift under AC Stress in 4H-SiC DMOSFETs by CO2 Post-Nitridation Annealing”, 2026 The 23nd International Conference on Silicon Carbide and Related Materials (ICSCRM), Yokohama Japan, pp299-300.<\/li>\n\n\n\n
    9. A. Koyasu, N. Iwamuro, H. Yano, “Negative Threshold Voltage Shifts in 4H-SiC MOSFETs under Bipolar AC Gate Stress: Influence of Channel Length and Nitridation Time”, 2026 The 23nd International Conference on Silicon Carbide and Related Materials (ICSCRM), Yokohama Japan, pp656-657.<\/li>\n\n\n\n
    10. S. Sasaki, C. Huang and T. Isobe, \u201cImproved CRM Operation for Totem-Pole PFC Leveraging Zero-Current Interval to Enable Switching-Frequency Regulation,\u201d 2026 IEEE Energy Conversion Congress & Expo (ECCE2026)<\/em>, Vancouver, BC, Canada, Oct., 2026,<\/li>\n<\/ol>\n\n\n\n

      \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u5185\uff09(Proceedings – Domestic)<\/h3>\n\n\n\n

      <\/p>\n\n\n\n

        \n
      1. \u7af9\u4e2d\u656c\u58eb\uff0cHuang Cheng\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u300cLCL \u30d5\u30a3\u30eb\u30bf\u4ed8\u304d\u5358\u76f8\u30d5\u30eb\u30d6\u30ea\u30c3\u30b8\u30a4\u30f3\u30d0\u30fc\u30bf\u306b\u304a\u3051\u308b\u30b7\u30f3\u30b0\u30eb\u30eb\u30fc\u30d7 dq \u96fb\u5727\u5236\u5fa1\u3068\u30ab\u30b9\u30b1\u30fc\u30c9 dq \u96fb\u5727\u5236\u5fa1\u306e\u6bd4\u8f03\u300d\uff0c2026\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u5ca1\u5c71\u5927\u5b66 \u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2026\u5e749\u67081\u65e5\uff5e3\u65e5<\/li>\n\n\n\n
      2. \u9ea6\u5009\u512a\u8f14\uff0c\u9ec4\u6210\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u300c\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u8ecc\u8de1\u4e0a\u306e\u52d5\u4f5c\u70b9\u306b\u57fa\u3065\u304f\u9ad8\u96fb\u5727\u9818\u57df\u51fa\u529b\u7279\u6027\u62bd\u51fa\u6cd5\u3068\u52d5\u4f5c\u6ce2\u5f62\u4e88\u6e2c\u300d\uff0c2026\u5e74\u96fb\u6c17\u5b66\u4f1a\u7523\u696d\u5fdc\u7528\u90e8\u9580\u5927\u4f1a\uff0c\u5ca1\u5c71\u5927\u5b66 \u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\uff0c2026\u5e749\u67081\u65e5\uff5e3\u65e5<\/li>\n\n\n\n
      3. \u65e5\u9ad8 \u525b, \u5ca9\u5ba4 \u61b2\u5e78, \u77e2\u91ce \u88d5\u53f8, \u300c\u30c1\u30e3\u30fc\u30b8\u30dd\u30f3\u30d4\u30f3\u30b0\u6e2c\u5b9a\u306b\u3088\u308b\u30b2\u30fc\u30c8AC\u30b9\u30c8\u30ec\u30b9\u4e0bSiC-MOSFET\u306e\u754c\u9762\u6e96\u4f4d\u751f\u6210\u8a55\u4fa1\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9a-A21-7, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      4. \u5b50\u5b89 \u8475, \u5ca9\u5ba4 \u61b2\u5e78, \u77e2\u91ce \u88d5\u53f8, \u300c\u30b2\u30fc\u30c8 AC \u30b9\u30c8\u30ec\u30b9\u306b\u3088\u308b n \u30c1\u30e3\u30cd\u30eb SiC MOSFET \u306e\u8ca0\u306e\u3057\u304d\u3044\u5024\u96fb\u5727\u5909\u52d5\u3068\u30c1\u30e3\u30cd\u30eb\u9577\u4f9d\u5b58\u6027\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9a-A21-8, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      5. \u767e\u7530 \u9f8d\u751f, \u5ca9\u5ba4 \u61b2\u5e78, \u77e2\u91ce \u88d5\u53f8, \u300cCO2-PNA\u306b\u3088\u308b4H-SiC DMOSFET\u306eAC\u30b9\u30c8\u30ec\u30b9\u306b\u5bfe\u3059\u308b\u3057\u304d\u3044\u5024\u96fb\u5727\u5909\u52d5\u306e\u9577\u671f\u6210\u5206\u6291\u5236\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9a-A21-10, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      6. \u5c0f\u5ddd \u512a\u4eba, \u5ca9\u5ba4 \u61b2\u5e78, \u77e2\u91ce \u88d5\u53f8, \u300c\u96fb\u5b50\u7dda\u7167\u5c04\u304cSiC MOSFET\u306e\u30c1\u30e3\u30cd\u30eb\u3068\u30c9\u30ea\u30d5\u30c8\u5c64\u306b\u4e0e\u3048\u308b\u5f71\u97ff\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9p-A21-1, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      7. \u53e4\u8c37 \u98af\u771f, \u5ca9\u5ba4 \u61b2\u5e78, \u77e2\u91ce \u88d5\u53f8, \u300c\u96fb\u5b50\u7dda\u7167\u5c04\u304cSiC-MOS\u30ad\u30e3\u30d1\u30b7\u30bf\u306e\u754c\u9762\u7279\u6027\u306b\u53ca\u307c\u3059\u5f71\u97ff\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9p-A21-2, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      8. \u99ac\u5834 \u667a\u5927, \u77e2\u91ce \u88d5\u53f8, \u5ca9\u5ba4 \u61b2\u5e78, \u300c\u8cbc\u308a\u5408\u308f\u305b\u57fa\u677f\u3092\u7528\u3044\u305fSiC MOSFET\u5185\u8535pin\u30c0\u30a4\u30aa\u30fc\u30c9\u306e\u7279\u6027\u89e3\u6790\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9p-A21-10, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      9. \u5185\u5c71 \u98af, \u77e2\u91ce \u88d5\u53f8, \u5ca9\u5ba4 \u61b2\u5e78, \u300cSiC MOSFET\u306b\u304a\u3051\u308b\u30aa\u30f3\u62b5\u6297\u6210\u5206\u89e3\u6790\u3068\u8ca0\u8377\u77ed\u7d61\u8010\u91cf\u3078\u306e\u69cb\u9020\u4f9d\u5b58\u6027\u306e\u691c\u8a0e\u300d,\u7b2c87\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66\u672d\u5e4c\u30ad\u30e3\u30f3\u30d1\u30b9, 9p-A21-12, 2026\u5e749\u67088\u65e5\uff5e11\u65e5<\/li>\n\n\n\n
      10. Cheng Huang\uff0c\u4f50\u3005\u6728\u58ee\u592a\uff0c\u78ef\u90e8\u9ad8\u7bc4\uff0c\u300cZVS\u3092\u5b9f\u73fe\u53ef\u80fd\u306aDCM\u7cfb\u7d71\u9023\u7cfb\u30a4\u30f3\u30d0\u30fc\u30bf\u306e\u9ad8\u52b9\u7387\u5316\uff1aTCM\u3092\u8d85\u3048\u308b\u6027\u80fd\u3092\u76ee\u6307\u3057\u3066\u300d\uff0c\u534a\u5c0e\u4f53\u96fb\u529b\u5909\u63db\/\u30e2\u30fc\u30bf\u30c9\u30e9\u30a4\u30d6\u5408\u540c\u7814\u7a76\u4f1a\uff0c\u516b\u4e08\u5cf6\uff0c2026\u5e749\u67089\u65e5\u301c10\u65e5<\/li>\n<\/ol>\n\n\n\n

        \u4e00\u822c\u96d1\u8a8c\u63b2\u8f09\u8a18\u4e8b (Magazines)<\/h3>\n\n\n

        \u8b1b\u6f14 (Invited Lecture)<\/h3>\n

         <\/p>\n\n\n

        <\/p>\n","protected":false},"excerpt":{"rendered":"\u8457\u8005\u306b\u4e0b\u7dda\u306e\u3042\u308b\u3082\u306e\u306f\u4ed6\u6a5f\u95a2\u6240\u5c5e\u306e\u8457\u8005\u3068\u306e\u5171\u8457\u306e\u3082\u306e\u3067\uff0c\u4e0b\u7dda\u306e\u8457\u8005\u304c\u672c\u7814\u7a76\u5ba4\u6240\u5c5e\u3067\u3059\u3002 \u5b66\u8853\u96d1\u8a8c\u63b2\u8f09\u8ad6\u6587 (Journals) \u5b66\u4f1a\u30fb\u7814\u7a76\u4f1a\u767a\u8868\uff08\u56fd\u969b\u5b66\u4f1a\uff09(Proceedings – Internation …","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-7432","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/7432","targetHints":{"allow":["GET"]}}],"collection":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=7432"}],"version-history":[{"count":66,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/7432\/revisions"}],"predecessor-version":[{"id":7628,"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/7432\/revisions\/7628"}],"wp:attachment":[{"href":"http:\/\/power.bk.tsukuba.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=7432"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}