Research Outcomes in 2022fy

著者に下線のあるものは他機関所属の著者との共著のもので，下線の著者が本研究室所属です。

学術雑誌掲載論文 (Journals)

1. K. Matsui, T. Tawara, S. Harada, S. Tanaka, H. Sato, H. Yano, and N.Iwamuro,”Significant Improvement of Switching Characteristics in a 1.2-kV SiC SWITCH-MOS by the Application of Kelvin Source Connection,” IEEJ Transaction on Electrical and Electronic Engineering, 2022, doi:10.1002/tee.23727
2. Y. Kitamura, F. Kato, S. Tanaka, T. Tawara, S. Harada, H. Sato, H. Yano and N. Iwamuro, “Study on Enhancing of the Surge Current Capabilities of Embedded SBDs in SWITCH-MOSs and Body-PiN-Diodes in SiC Trench MOSFETs,” 2022 Jpn. J. Appl. Phys., Vol. 62, pp. SC1007/1-9, 2022, DOI: 10.35848/1347-4065/aca61b.

学会・研究会発表（国際学会）(Proceedings – International)

1. Y. Kitamura, F. Kato, S. Tanaka, T. Tawara, S. Harada, H. Sato, H. Yano and N. Iwamuro, “Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block,” in Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2022), pp. 109-112, 2022.
2. C. Huang, T. Mannen and T. Isobe, “Current Ripple Reduction with Enhanced ZVS Operation Based on Off-time Discrete Control for DCM Inverters to Achieve High efficiency,”2022 International Power Electronics Conference (IPEC 2022), May, 2022.
3. K. Yao, F. Kato, S. Satoshi, S. Harada, H. Sato, H. Yano and N. Iwamuro, “Enhanced Short-Circuit Capability for 1.2 kV SiC SBD-Integrated Trench MOSFETs using Cu Blocks Sintered on the Source Pad,” in Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2022), pp. 297-300, 2022.
4. K. Kashiwa, K. Yao, H. Yano and N. Iwamuro, “Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis,” in Proc. of Int. Symp. Power Semiconductors and ICs (ISPSD 2022), pp. 113-116, 2022.
5. B. Seo, T. Isobe and T. Mannen, “Suppression Method of DC Capacitor Currents in a Three-Phase Current Unfolding Inverter Equipped With Ultra-Small DC Capacitors,”2022 International Symposium on Industrial Electronics (ISIE 2022), June, 2022.
6. Y. Kitamura, T. Tawara, S. Harada, H. Yano and N. Iwamuro, “Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals,” in Ext. Abstr. Solid State Devices and Materials (SSDM 2022), pp. 701-702, 2022.
7. K. Kashiwa, M. Takahashi, H. Yano and N. Iwamuro, “Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs,” in Ext. Abstr. Solid State Devices and Materials (SSDM 2022), pp. 703-704, 2022.

学会・研究会発表（国内）(Proceedings – Domestic)

1. 松岡亨卓，磯部⾼範，加藤史樹，先崎純寿，佐藤弘，岩室憲幸，“電気熱連成解析によるモータ駆動時の SiC MOSFET の温度推定”，電気学会産業応用部門大会，四⾕，2022年8月30日～9月1日

一般雑誌掲載記事 (Magazines)

講演 (Invited Lecture)

書籍 (Books)