TSUKUBA POWER ELECTRONICS LABORATORY

矢野 裕司

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矢野 裕司（やの ひろし）

居室：共同研究棟D（旧ベンチャービジネスラボラトリ） VBL401-1

E-mail：yano.hiroshi.fn@u

TEL：029-853-5781

専門分野：半導体、SiC、MOSデバイス

所属：数理物質系 准教授（物理工学域）

学位： 博士（工学）

研究概要

  • パワーエレクトロニクスに革新をもたらす超低損失SiCパワーデバイスの研究
  • SiC-MOSデバイスの特性向上
  • SiC/SiO2界面基礎物理の理解

略歴

  • 愛知県豊橋市生まれ
  • 1992/04-1996/03　京都大学　学士 （工学部　電気工学第二学科）
  • 1996/04-1998/03　京都大学　修士 （工学研究科　電子物性工学専攻）
  • 1998/04-2001/03　京都大学　博士 （工学研究科　電子物性工学専攻）
  • 2000/01-2001/03　日本学術振興会　特別研究員（DC2）
  • 2001/04-2007/03　奈良先端科学技術大学院大学　物質創成科学研究科　助手
  • 2007/04-2013/11　奈良先端科学技術大学院大学　物質創成科学研究科　助教
  • 2008/03-2009/03　フランス国 Ecole Polytechnique, LPICM, Visiting Researcher
  • 2013/12-2016/03　奈良先端科学技術大学院大学　物質創成科学研究科　客員准教授
  • 2013/12-現在　筑波大学　数理物質系　物理工学域　准教授

受賞歴

  • IEEE EDS Kansai Chapter IMFEDK Best Paper Award（2010）
  • 第18回井上研究奨励賞（2002）
  • 第7回応用物理学会講演奨励賞（1999）

主要な論文

  1. T. Honda and H. Yano, “Simple method to estimate the shallow interface trap density near the conduction band edge of MOSFETs using Hall effect measurements”, Jpn. J. Appl. Phys., Vol. 60, No. 1, 016505/1-6 (2021). https://doi.org/10.35848/1347-4065/abd369
  2. R. Aiba, K. Matsui, M. Baba, S. Harada, H. Yano, and N. Iwamuro, “Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET with Higher Schottky Barrier Height Metal”, IEEE Electron Device Lett., Vol. 41, No. 12, pp.1810-1813 (2020). DOI: 10.1109/LED.2020.3031598
  3. K. Yao, H. Yano, H. Tadano, and N. Iwamuro, “Investigations of SiC MOSFET Short-circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses”, IEEE Trans. Electron Devices, Vol. 67, No. 10, pp.4328-4334 (2020). DOI: 10.1109/TED.2020.3013192
  4. H. Takeda, M. Sometani, T. Hosoi, T. Shimura, H. Yano and H. Watanabe, “Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement”, Mater. Sci. Forum, Vol. 1004, pp.620-626 (2020). Online: 2020.7.28, DOI: 10.4028/www.scientific.net/MSF.1004.620
  5. X. Zhang, T. Matsumoto, U. Sakurai, T. Makino, M. Ogura, S. Yamasaki, M. Sometani, D. Okamoto, H. Yano, N. Iwamuro, T. Inokuma, and N. Tokuda, “Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method”, Carbon, Vol.168, pp.659-664 (2020). https://doi.org/10.1016/j.carbon.2020.07.019
  6. E. Higa, M. Sometani, H. Hirai, H. Yano, S. Harada, T. Umeda, “Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces”, Appl. Phys. Lett., Vol. 16, No. 17, 171602/1-4 (2020). DOI: 10.1063/5.0002944
  7. H. Nemoto, D. Okamoto, X. Zhang, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano, “Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs”, Jpn. J. Appl. Phys., Vol. 59, No. 4, 044003/1-6 (2020). https://doi.org/10.35848/1347-4065/ab7ddb
  8. T. Ohashi, R. Iijima, and H. Yano, “Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility”, Jpn. J. Appl. Phys., Vol. 59, No. 3, 034003/1-10 (2020). https://doi.org/10.35848/1347-4065/ab755a
  9. T. Umeda, T. Kobayashi, M. Sometani, H. Yano, Y. Matsushita, and S. Harada, “Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface”, Appl. Phys. Lett., Vol. 116, No. 7, 071604/1-5 (2020). DOI: 10.1063/1.5143555
  10. M. Sometani, T. Hosoi, H. Hirai, T. Hatakeyama, S. Harada, H. Yano, T. Shimura, H. Watanabe, Y. Yonezawa, and H. Okumura, “Ideal phonon-scattering-limited mobility in inversion channel of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations”, Appl. Phys. Lett., Vol. 115, No. 13, 132102/1-5 (2019). DOI: 10.1063/1.5115304
  11. M. Okawa, R. Aiba, T. Kanamori, Y. Kobayashi, S. Harada, H. Yano, and N. Iwamuro, “First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS”, J. Electron Devices Soc., Vol. 7, pp.613-620 (2019). 10.1109/JEDS.2019.2917563
  12. W. Fu, A. Kobayashi, H. Yano, A. Ueda, S. Harada, and T. Sakurai, “Investigation of stress at SiO2/4H-SiC interface induced by thermal oxidation by confocal Raman microscopy”, Jpn. J. Appl. Phys., Vol. 58, No. SB, SBBD03/1-5 (2019). https://doi.org/10.7567/1347-4065/aafd93
  13. T. Masuda, T. Hatakeyama, S. Harada, and H. Yano, “Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0-33-8) interfaces”, Jpn. J. Appl. Phys., Vol. 58, No. SB, SBBD04/1-5 (2019). https://doi.org/10.7567/1347-4065/aafb55
  14. Y. Kagoyama, M. Okamoto, T. Yamasaki, N. Tajima, J. Nara, T. Ohno, H. Yano, S. Harada, and T. Umeda, “Anomalous carbon clusters in 4H-SiC/SiO2 interfaces”, J. Appl. Phys., Vol. 125, No. 6, 065302/1-8 (2019). https://doi.org/10.1063/1.5066356
  15. T. Hatakeyama, T. Masuda, M. Sometani, S. Harada, D. Okamoto, H. Yano, Y. Yonezawa, and H. Okumura, “Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities”, Appl. Phys. Express, Vol. 12, No. 2, pp.201003/1-5 (2019). https://doi.org/10.7567/1882-0786/aaf283
  16. E. Fujita, M. Sometani, T. Hatakeyama, S. Harada, H. Yano, T. Hosoi, T. Shimura, and H. Watanabe, “Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements”, AIP Adv., Vol. 8, No. 8, 085305/1-6 (2018). DOI: 10.1063/1.5034048
  17. M. Namai, J. An, H. Yano, and N. Iwamuro, “Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage”, Jpn. J. Appl. Phys., Vol. 57, No. 7, 074102/1-10 (2018). DOI: 10.7567/JJAP.57.074102
  18. X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano, “Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors”, Jpn. J. Appl. Phys., Vol. 57, No. 6S3, 06KA04/1-5 (2018). DOI: 10.7567/JJAP.57.06KA04
  19. Y. Karamoto, X. Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano, “Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors”, Jpn. J. Appl. Phys., Vol. 57, No. 6S3, 06KA06/1-6 (2018). DOI: 10.7567/JJAP.57.06KA06
  20. M. Hayashi, M. Sometani, T. Hatakeyama, H. Yano, and S. Harada, “Hole Trapping in SiC-MOS Devices Evaluated by Fast-Capacitance-Voltage Method”, Jpn. J. Appl. Phys., Vol. 57, No. 4S, 04FR15/1-4 (2018). DOI: 10.7567/JJAP.57.04FR15
  21. M. Sometani, M. Okamoto, T. Hatakeyama, Y. Iwahashi, M. Hayashi, D. Okamoto, H. Yano, S. Harada, Y. Yonezawa, and H. Okumura, “Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices under Various Gate Bias Stress Conditions”, Jpn. J. Appl. Phys., Vol. 57, No. 4S, 04FA07/1-7 (2018). DOI: 10.7567/JJAP.57.04FR15
  22. J. An, M. Namai, D. Okamoto, H. Yano, H. Tadano, and N. Iwamuro, “Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test”, Electronics and Communications in Japan, Vol. 101, No. 1, pp.24-31 (2018). DOI: 10.1002/ecj.12018
  23. J. An, M. Namai, H. Yano, and N. Iwamuro, “Investigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications”, IEEE Trans. Electron Devices, Vol. 64, No. 10, pp.4219-4225 (2017). DOI: 10.1109/TED.2017.2742542
  24. 岡本大, 矢野裕司, 「異原子導入によるSiC MOSFETの特性改善」応用物理, Vol. 86, No. 9, pp.781-785 (2017).
  25. X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano, “Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model”, Appl. Phys. Express, Vol. 10, No. 6, pp.064101/1-4 (2017). DOI: 10.7567/APEX.10.064101
  26. M. Okamoto, M. Sometani, S. Harada, H. Yano, and H. Okumura, “Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET”, Mater. Sci. Forum, Vol. 897, pp.549-552 (2017). Online: 2017.5.15, DOI: 10.4028/www.scientific.net/MSF.897.549
  27. T. Hatakeyama, Y. Kiuchi, M. Sometani, S. Harada, D. Okamoto, H. Yano, Y. Yonezawa, and H. Okumura, “Characterization of Traps at Nitrided SiO2/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements”, Appl. Phys. Express,Vol. 10, No. 4, pp. 046601/1-4 (2017). DOI: 10.7567/APEX.10.046601
  28. D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano, “Effect of boron incorporation on slow interface traps in SiO2/4H-SiC structures”, Appl. Phys. A, Vol. 123, Article 133 (6pages), (2017). DOI: 10.1007/s00339-016-0724-1
  29. 安俊傑, 生井正輝, 岡本大, 矢野裕司, 只野博, 岩室憲幸, 「Unclampled Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価」, 電気学会論文誌C, Vol. 137, No.2, pp.216-221 (2017). DOI: 10.1541/ieejeiss.137.216
  30. T. Murakami, T. Masuda, S. Inoue, H. Yano, N. Iwamuro, and T. Shimoda, “Photoelectron Yield Spectroscopy and Inverse Photoemission Spectroscopy Evaluations of P-type Amorphous Silicon Carbide Films Prepared using Liquid Materials”, AIP Advances, Vol. 6, pp.055021/1-6 (2016). DOI: 10.1063/1.4952592
  31. A. Henry, H. Yano, and T. Hatayama, “Photoluminescence of 10H-SiC”, Mater. Sci. Forum, Vol. 858, pp.269-273 (2016). Online 2016.5.24, DOI: 10.4028/www.scientific.net/MSF.858.269
  32. Y. Kiuchi, H. Kitai, H. Shiomi, M. Tsujimura, D. Nakata, S. Harada, Y. Yonezawa, K. Fukuda, K. Sakamoto, K. Yamasaki, H. Yano, and H. Okumura, “Characterization of Themally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-ray Photoelectron Spectroscopy (XPS), and High-resolution Rutherford Backscattering Spectroscopy (HR-RBS)”, Mater. Sci. Forum, Vol. 858, pp.449-452 (2016). Online 2016.5.24, DOI: 10.4028/www.scientific.net/MSF.858.449
  33. T. Hatakeyama, K. Takao, Y. Yonezawa, and H. Yano, “Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements”, Mater. Sci. Forum, Vol. 858, pp.477-480 (2016). Online 2016.5.24, DOI: 10.4028/www.scientific.net/MSF.858.477
  34. T. Hatayama, A. Henry, H. Yano, and T. Fuyuki, “Low-Temperature Photoluminescence of 8H-SiC Homoepitaxial Layer”, Jpn. J. Appl. Phys., Vol.55, No.2, pp.020303/1-4 (2016). DOI: 10.7567/JJAP.55.020303
  35. H. Yano, N. Kanafuji, A. Osawa, T. Hatayama, and T. Fuyuki “Threshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-Doped and Nitrided Gate Oxides” IEEE Trans. Electron Devices, Vol. 62, No.2, pp.324-332 (2015) DOI: 10.1109/TED.2014.2358260
  36. D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa, and H. Yano “Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation” IEEE Electron Device Lett., Vol.35, No.12, pp.1176-1178 (2014). DOI: 10.1109/LED.2014.2362768
  37. 矢野裕司, 畑山智亮, 冬木隆「ゲート酸化膜へのリン導入によるSiC-MOS界面欠陥の低減とMOSFETの高性能化」表面科学, Vol.35, No.2, pp.90-95 (2014). DOI: 10.1380/jsssj.35.90
  38. A. Osawa, H. Yano, T. Hatayama, and T. Fuyuki “Characterization of POCl3– and NO-annealed 4H-SiC MOSFETs by Charge Pumping Technique” Mater. Sci. Forum, Vols.740-742, pp.541-544 (2013). DOI: 10.4028/www.scientific.net/MSF.740-742.541
  39. T. Akagi, H. Yano, T. Hatayama, and T. Fuyuki “Effect of Interface Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices” Mater. Sci. Forum, Vols.740-742, pp.695-698 (2013). DOI: 10.4028/www.scientific.net/MSF.740-742.695
  40. H. Yano, T. Araoka, T. Hatayama, and T. Fuyuki “Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 annealing” Mater. Sci. Forum, Vols.740-742, pp.727-732 (2013). DOI: 10.4028/www.scientific.net/MSF.740-742.727
  41. Y. Ueoka, K. Shingu, H. Yano, T. Hatayama, and T. Fuyuki “Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistors on Off-axis Substrates” Jpn. J. Appl. Phys., Vol.51, No.11, pp.110201/1-3 (2012). DOI: 10.1143/JJAP.51.110201
  42. H. Yano, T. Hatayama, and T. Fuyuki “POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance” ECS Trans., Vol.50, No.3, pp.257-265 (2012). DOI: 10.1149/05003.0257ecst
  43. D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki “Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide” Mater. Sci. Forum, Vols.717-720, pp.733-738 (2012).
  44. R. Morishita, H. Yano, D. Okamoto, T. Hatayama, and T. Fuyuki “Effect of POCl3 annealing on Reliability of Thermal Oxides Grown on 4H-SiC” Mater. Sci. Forum, Vols.717-720, pp.739-742 (2012).
  45. D. Okamoto, H. Yano, S. Kotake, T. Hatayama, and T. Fuyuki “Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface” Mater. Sci. Forum, Vols.679-680, pp.338-341 (2011).
  46. S. Kotake, H. Yano, D. Okamoto, T. Hatayama, and T. Fuyuki “Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing” Mater. Sci. Forum, Vols.679-680, pp.425-428 (2011).
  47. H. Yano, Y. Oshiro, D. Okamoto, T. Hatayama, and T. Fuyuki “Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants” Mater. Sci. Forum, Vols.679-680, pp.603-606 (2011).
  48. Y. Ueoka, H. Yano, D. Okamoto, T. Hatayama, and T. Fuyuki “Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates” Mater. Sci. Forum, Vols.679-680, pp.666-669 (2011).
  49. D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki “Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si face Utilizing Phosphorus-Doped Gate Oxide” IEEE Electron Device Lett., Vol.31, No.7, pp.710-712 (2010).
  50. D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki “Removal of Near-Interface Traps at SiO2/4H-SiC (0001) Interfaces by Phosphorus Incorporation” Appl. Phys. Lett., Vol.96, No.20, 203508/1-3 (2010).
  51. D. Okamoto, H. Yano, S. Kotake, K. Hirata, T. Hatayama, and T. Fuyuki “Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique” Mater. Res. Soc. Symp. Proc., Vol.1246, pp.1246-B06-06/1-5 (2010).
  52. Y. Iwasaki, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki “NH3 Plasma Pretreatment of 4H-SiC(000-1) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices” Appl. Phys. Exp., Vol.3, No.2, pp.026201/1-3 (2010).
  53. D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki “Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates” Mater. Sci. Forum, Vols.645-648, pp.495-498 (2010).
  54. Y. Iwasaki, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki “Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and Its Bond Configuration” Mater. Sci. Forum, Vols.645-648, pp.503-506 (2010).
  55. D. Okamoto, H. Yano, Y. Oshiro, T. Hatayama, Y. Uraoka, and T. Fuyuki “Investigation of Oxide Films Prepared by Direct Oxidation of C-face 4H-SiC in Nitric Oxide” Mater. Sci. Forum, Vols.645-648, pp.515-518 (2010).
  56. D. Okamoto, H. Yano, Y. Oshiro, T. Hatayama, Y. Uraoka, and T. Fuyuki “Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures” Appl. Phys. Exp., Vol.2, No.2, pp.021201/1-3 (2009).
  57. D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki “Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs” Mater. Sci. Forum, Vols.600-603, pp.747-750 (2009).
  58. D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki “Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs” IEEE Trans. Electron Devices, Vol.55, No.8, pp.2013-2020 (2008).
  59. H. Yano, H. Nakao, T. Hatayama, Y. Uraoka, and T. Fuyuki “Increased Channel Mobility in 4H-SiC UMOSFETs Using On-axis Substrates” Mater. Sci. Forum, Vols.556-557, pp.807-810 (2007).
  60. D. Takeda, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki “Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing” Mater. Sci. Forum, Vols.556-557, pp.663-666 (2007).
  61. H. Yano, H. Nakao, H. Mikami, T. Hatayama, Y. Uraoka, and T. Fuyuki “Anomalously Anisotropic Channel Mobility on Trench Sidewalls in 4H-SiC Trench-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 8-degree Off Substrates” Applied Physics Letters, 90 (2007) 042102.
  62. Y. Maeyama, H. Yano, Y. Furumoto, T. Hatayama, Y. Uraoka, and T. Fuyuki “Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation” Japanese Journal of Applied Physics, 42 (2003) L575.
  63. H. Yano, T. Kimoto, H. Matsunami, and H. Shiomi “Interface Properties in Metal-Oxide-Semiconductor Structures on n-type 4H-SiC (03-38)” Applied Physics Letters, 81 (2002) 4772.
  64. H. Yano, T. Kimoto, and H. Matsunami “Shallow States at SiO2/4H-SiC Interface on (11-20) and (0001) Faces” Applied Physics Letters, 81 (2002) 301.
  65. H. Yano, T. Hirao, T. Kimoto, and H. Matsunami “A Cause for Highly Improved Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors on the (11-20) Face” Applied Physics Letters, 78 (2001) 374.
  66. H. Yano, T. Hirao, T. Kimoto, and H. Matsunami “High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors” Japanese Journal of Applied Physics, 39 (2000) 2008.
  67. H. Yano, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara “High Channel Mobility in Inversion Layers of 4H-SiC MOSFET’s by Utilizing (11-20) Face” IEEE Electron Device Letters, 20 (1999) 611.
  68. H. Yano, F. Katafuchi, T. Kimoto, and H. Matsunami “Effects of Wet Oxidation/Anneal on Interface Properties of Thermally Oxidized SiO2/SiC MOS System and MOSFET’s” IEEE Transaction on Electron Devices, 46 (1999) 504.

（その他）

主な国際学会発表

    1. H. Yano (Invited) “Threshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-doped and Nitrided Gate Oxides” (Oral) 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki (Greece), Th1.01, 2016/9/29.
    2. T. Hatakeyama, K. Takao, Y. Yonezawa, and H. Yano “Pragmatic Approach to the Characterization of Traps at SiC/SiO2 Interfaces near the Conduction Band with Split C-V and Hall Measurements” (Oral, 矢野発表) The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Giardini Naxos (Italy), Fr-1B-4, 2015/10/9.
    3. H. Yano, A. Osawa, T. Hatayama, and T. Fuyuki “Comparative Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3– and NO- Annealed Gate Oxides” (Oral) The International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), Miyazaki (Japan), We-3A-3, 2013/10/2.
    4. H. Yano, T. Hatayama, and T. Fuyuki (Invited) “POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance” (Oral) PRiME 2012 (Pacific Rim Meeting on Electrochemical and Solid-State Science), Honolulu (HI, USA), #2548, 2012/10/10.
    5. H. Yano, T. Araoka, T. Hatayama, and T. Fuyuki (Invited) “Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing” (Oral) The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM2012), Saint-Petersburg (Russia), We8-1, 2012/9/5.
    6. H. Yano, Y. Oshiro, D. Okamoto, T. Hatayama, and T. Fuyuki “Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constant” (Oral) 8th European Conference on Silicon Carbide and Related Materials (ECSCRM2010), Oslo (Norway), Thu3-5, 2010/09/02.
    7. H. Yano (Invited) “SiC MOSFETs and Their Interfaces” (Oral) 33rd IEEE Semiconductor Interface Specialists Conference (SISC2002), San Diego (CA, USA), 5.1, 2002/12/06.
    8. H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, T. Kimoto, and H. Matsunami (Invited) “SiO2/SiC Interface Properties on Various Surface Orientations” (Oral) 2002 MRS Fall Meeting, Boston (MA, USA), K4.5, 2002/12/03.

主な国内学会発表

    1. 矢野裕司「SiC酸化膜への窒素、リン、ホウ素添加による界面特性改善効果」（招待講演） 先進パワー半導体分科会第2回個別討論会, ABC貸会議室, 2016/8/1.
    2. 矢野裕司「SiC MOSFETとMOS界面の最近の進展」（依頼講演） 2015年真空･表面科学合同講演会, 【合同シンポジウム「パワーデバイスにおけるワイドギャップ半導体の最前線」】, つくば国際会議場, 1Bp03, p.4, 2015/12/01.
    3. 矢野裕司「SiC-MOS界面特性改善技術　～異原子導入による界面改質～」（招待講演）先進パワー半導体分科会第2回講演会, 大阪国際交流センター, V-1, pp.24-25, 2015/11/10.
    4. 矢野裕司「SiCパワーデバイスの最前線」（依頼講演）応用物理学会関西支部　平成26年度　第3回講演会, 奈良先端科学技術大学院大学, 2015/2/27.
    5. 矢野裕司「SiCパワーデバイスの界面制御の理解と課題」（依頼講演）応用電子物性分科会研究例会, 名古屋大学, (5), 2014/06/05.
    6. 矢野裕司, 畑山智亮, 冬木隆「チャージポンピング法によるSiC-MOS界面特性の評価」（依頼講演） SiC及び関連半導体研究　第22回講演会, 埼玉会館, IX-4, 2013/12/10.
    7. 矢野裕司, 畑山智亮, 冬木隆（依頼講演）「POCl3アニールによるSiC-MOSデバイスの高性能化」電子情報通信学会　シリコン材料・デバイス研究会、SDM2013-58 応用物理学会　シリコンテクノロジー分科会　第161回研究集会（共催）,　機械振興会館, 2013/6/18.
    8. 矢野裕司（招待講演）「SiC-MOSデバイスの界面欠陥低減技術」 SEMI FORUM JAPAN 2013、パワーデバイスセミナー(2) －化合物半導体パワーデバイスの現状と今後の展望－, グランキューブ大阪, 2013/5/22.
    9. 矢野裕司（招待講演）「SiO2/SiC界面へのリン導入による高品質界面の形成」ゲートスタック研究会　－材料・プロセス・評価の物理－　第18回研究会, ニューウェルシティ湯河原, 2013/1/26. (予稿集p.59-62)

著書

  1. 「次世代パワー半導体の高性能化とその産業展開」　岩室憲幸　監修　シーエムシー出版(2015). (分担：第15章ゲート酸化膜　pp.136-145) 2015.6.10発行
  2. 「ポストシリコン半導体　－ナノ成膜ダイナミクスと基板・界面効果－」　エヌ・ティー・エス(2013). （分担：第2編、第1章、第4節 SiCデバイスプロセスにおける新規表面・界面改質技術　pp.94-104） 2013.6.11発行
  3. 「SiCパワーデバイスの開発と最新動向　－普及に向けたデバイスプロセスと実装技術－」　岩室憲幸監修 S&T出版(2012) (分担：第2章－第4節 MOS界面欠陥の低減技術と高品質化　pp.42-52) 2012.10.30発行
  4. 「半導体SiC技術と応用　第2版」　松波弘之・大谷昇・木本恒暢・中村孝　編著　日刊工業新聞社(2011) (分担:7.3.1 MOS界面基礎と界面物性評価法 pp.264-274) 　2011.9.30発行
  5. 「半導体SiC技術と応用」　松波弘之　編著　日刊工業新聞社(2003) (分担:6.2 MOS界面特性pp.128-135)　2003.3.31発行

エディター

  1. “Silicon Carbide and Related Materials 2019”, Volume 1004 of Materials Science Forum, Edited by Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Shinsuke Harada, Takeshi Mitani, and Yasunori Tanaka, Trans Tech Publications, Switzerland, 2020.

    ISSN print 0255-5476, ISSN cd 1662-9760, ISSN web 1662-9752

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