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2019年度の研究業績

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学術雑誌掲載論文 (Journals)

  1. Ryuji Iijima, Takanori Isobe, Hiroshi Tadano, “Optimized Short-Through Time Distribution for Inductor Current Ripple Reduction in Z-Source Inverters Using Space-Vector Modulation” IEEE Transactions on Industry Applications, Vol. 55, No. 3, pp. 2922-2930, May-June 2019,  DOI:10.1109/TIA.2019.2898848
  2. Yushi Koyama, Takanori Isobe, “Current control of modular multilevel converters with phase‐shifted pwm using a daisy‐chained distributed control system,” IEEJ Transactions on Electrical and Electronic Engineering, Vol. 14, No. 7, pp. 1095-1104, July 2019. DOI:10.1002/tee.22905
  3. Masataka Okawa, Ruito Aiba, Taiga Kanamori, Yusuke Kobayashi, Shinsuke Harada, Hiroshi Yano, and Noriyuki Iwamuro,First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS,” IEEE Journal of Electron Devices Society, vol.7, pp.613-620, 2019, DOI:10.1109/JEDS.2019.2917563.
  4. Noriyuki Iwamuro, “Recent Progress of SiC MOSFET Devices,” Material Science Forum, vol. 954, pp.90-98, 2019.
  5. T. Isobe, R. A. Barrera-Cardenas, Z. He, Y. Zou, K. Terazono and H. Tadano, “Control of Three-Phase Solid-State Transformer with Phase-Separated Configuration for Minimized Energy Storage Capacitors,” IEEE Journal of Emerging and Selected Topics in Power Electronics (Early Access), DOI: 10.1109/JESTPE.2019.2923785

学会・研究会発表(国際学会)(Proceedings – International)

  1. H. Zhang, R. Barrera-Cardenas, R. Iijima, T. Isobe, H. Tadano, “Passive Components Size Reduction in Solid-State Transformers for EV Fast Charging System,” in the 3rd IEEE International Conference on DC Microgrids (ICDCM2019), May 20-23, Matsue, Japan.
  2. N. Iwamuro,”Recent Progress of SiC-MOSFETs and Their Futures(Invited),” in Proc. Inter. Conf. on Electronic Packageing 2019, Apr. 2019, FA2-3, pp.260-264.
  3. N. Iwamuro,”Recent Progress of SiC-MOSFETs and Competition with state-of-the-art Si-IGBTs (Keynote Speech),” WiPDA-Asia 2019, Taipei, May. 2019.
  4. Kailun Yao, Hiroshi Yano, and Noriyuki Iwamuro ”Investigation of UIS Capability for -600V Class Vertical SiC p-channel MOSFET,” in Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD) 2019, pp. 187-190, May, Shanghai (China).
  5. Ruito Aiba, Masataka Okawa, Taiga Kanamori, Yusuke Kobayashi, Shinsuke Harada, Hiroshi Yano, and Noriyuki Iwamuro ”Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS,” in Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD) 2019, pp. 23-26, May, Shanghai (China).
  6. Masataka Okawa, Ruito Aiba Taiga Kanamori, Shinsuke Harada, Hiroshi Yano, and Noriyuki Iwamuro ”Experimental and Numerical Investigations of Short-Circuit Failure Mechanisms for State-of-the-Art 1.2kV SiC Trench MOSFETs,” in Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD) 2019, pp. 167-170, May, Shanghai (China).
  7. J.Zhang, T.Isobe and H.Tadano”Peak Current Reduction and Zero Cross Distortion Improvement for Discontinuous Current Mode Single Phase Grid-Tied Inverter,”in Proceedings of  EPE’19 ECCE Europe, Sep. 2-6,Genova,Italy.
  8. D. Okamoto, H. Nemoto, X. Zhang, X. Zhou, M. Somenati, M. Okamoto, S. Harada, T. Hatakeyama, N. Iwamuro, and H, Yano, “Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method”, International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.
  9. T. Kanamori, R. Aiba, M. Okawa, S. Harada, H. Yano, and N. Iwamuro “Superior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length”, International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.
  10. X. Zhang, D. Okamoto, M. Sometani, S. Harada, N. Iwamuro, and H. Yano, “Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides”, Oral, International Conference on Silicon Carbide and Related Materials 2019, Oral, Sep. 29-Oct. 4, Kyoto, Japan.
  11. X. Zhou, D. Okamoto, X. Zhang, M. Sometani. M. Okamoto, S. Harada, N. Iwamuro, H. Yano, “Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs”,  International Conference on Silicon Carbide and Related Materials 2019, Sep. 29-Oct. 4, Kyoto, Japan.
  12. Y. Matsuya, X. Zhang, D. Okamoto,  N. Iwamuro, H. Yano, “Analysis of three-level charge pumping characteristics of4H-SiC MOSFETs considering near-interface traps”,  International Conference on Silicon Carbide and Related Materials 2019, Sep. 29-Oct. 4, Kyoto, Japan.
  13. M.Terada, H.Toyoda, R.Iijima, T.Isobe and H.Tadano,  “Control of a Three-Phase Grid-Tied Inverter Designed for Discontinuous Current Mode Operation,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE) 2019Sep. 29-Oct. 3, Baltimore, U.S.A.
  14. J.Zhang, T.Isobe and H.Tadano,  “Improvements on Harmonic Current Distortion for MHz-Operated Discontinuous Current Mode Single Phase Grid-Tied Inverter with GaN-HEMT Device,” in Proceedings of IEEE Energy Conversion Congress & Exposition (ECCE) 2019Sep. 29-Oct. 3, Baltimore, U.S.A.
  15. K. Takashima, R. Iijima, T. Mannen, T. Isobe, H. Tadano and N. Iwamuro “Design Strategy of Z-source Inverter for Utilization of Power Semiconductors with Extremely Low Short-circuit Capability,” in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019), 14-17 October 2019, Lisbon, Portugal.K.
  16. M. Akihiro, K. Terazono, T. Isobe, H. Tadano  “Unbalance Load Compensation for Solid-State Transformer Using Smoothing Capacitors of Cascaded H-Bridges as Energy Buffer,” in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019), 14-17 October 2019, Lisbon, Portugal.
  17. M.Li , R. Iijima, T. Mannen, T. Isobe, H. Tadano and N. Iwamuro “New Modulation Strategy for Volume Reduction of Inductor for q-Z-source Inverter,” in Proceedings of The 45th Annual Conference of the IEEE Industrial Electronics Society (IECON 2019), 14-17 October 2019, Lisbon, Portugal.
  18. N. Iwamuro, “Power Semicouductor Devices and Their Futures,” Int. Symp. Semiconductor Technology Innovation for Next Distinguished Evolutional World 2019, Nagoya, Sept. 2019.

学会・研究会発表(国内)(Proceedings – Domestic)

  1. 秋廣元輝,磯部高範,只野博,”カスケードHブリッジの平滑コンデンサをエネルギーバッファとして用いるSolid-State Transformerにおける不平衡負荷補償制御”,2019年電気学会産業応用部門大会,長崎大学 2019年8月20日~22日
  2. 栃木大樹,磯部高範,只野博,”ゼロ電圧ターンオンをする電力変換器のモデリングのための寄生容量に着目したスイッチング現象の実験的検討”,2019年電気学会産業応用部門大会,長崎大学 2019年8月20日~22日
  3. 張剣韜,寺田陽,磯部高範,只野博 “電流不連続モードを適用した系統連系インバータのソフトスイッチングを目指した制御法の実機検証”,半導体電力変換/モータドライブ合同研究会岩手,2019年9月12日・9月13日
  4. 松谷 優汰,張 旭芳,岡本 大,岩室 憲幸,矢野 裕司 “界面近傍酸化膜トラップを考慮した4H-SiC MOSFET の3 レベルチャージポンピング特性の解析”, 2019年応用物理学会秋季学術講演会 2019年9月18日~21日

一般雑誌掲載記事 (Magazines)

  1. 岩室 憲幸, 第1節 ”サーマルマネージメント -パワー半導体デバイスの技術と課題-”, サーマルデバイス 新素材・新技術による熱の高度制御と高効率利用, 監修:舟橋良次/小原春彦, 2019.04, ㈱エヌ・ティー・エス.
  2. 岩室 憲幸, ”IV. パワー半導体デバイスの現状”, 粉体技術 6月号, 2019.

講演 (Invited Lecture)

  1. N. Iwamuro, “Recent Progress of SiC-MOSFETs and Competition with state-of-the-art Si-IGBTs,” National Tsing Hua University (Taiwan) (国立清華大学), May 27th, 2019.
  2. 岩室 憲幸,”パワーデバイスの動向およびSiC・GaN研究開発の最前線”電気学会産業応用フォーラムパワエレ道場, 2019年7月17日.
  3. N. Iwamuro, “Device Design and Characteristics of SiC MOSFETs,” ICSCRM 2019 Tutorial, Kyoto, Sept. 2019.
  4. 岩室 憲幸, “TCADを用いた最先端SiCトレンチMOSFETの破壊メカニズム解析”シノプシスSEGセミナー2019, 10月9日.
  5. 岩室 憲幸,”シリコンならびにSiCパワー半導体デバイスの最新技術動向”第6回電子デバイスフォーラム京都,2019年11月1日.

書籍 (Books)

  1. 岩室 憲幸著 ”車載機器におけるパワー半導体の設計と実装” 科学情報出版株式会社, 2019年9月20日発行
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